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IXTT170N10P
Power MOSFET, N Channel, 100 V, 170 A, 9000 µohm, TO-268 (D3PAK), Surface Mount
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar
- Qualification: -
- Power Dissipation: 715W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-268 (D3PAK)
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 170A
- Drain Source On State Resistance: 9000µohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.53 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar[[TM]]** ## **Polar[[TM]] IXTT170N10P Power MOSFET IXTQ170N10P IXTK170N10P** **V = 100V DSS I = 170A D25 R ≤ 9m Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated ## **TO-268 (IXTT)** **==> picture [49 x 36] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br> Tab<br>**----- End of picture text -----**<br> ## **TO-3P (IXTQ)** |**Symbol**|**Test Conditions**|**Maximum Ratings**|| |---|---|---|---| |**VDSS**|TJ = 25°C to 175°C|100 V|100 V| |**VDGR**<br>TJ = 25°C to 175°C, RGS= 1MΩ<br>100 V<br>~~oo~~|||| |**VGSS**<br>**VGSM**|Continuous ± 20 V<br>Transient ± 30 V|Continuous ± 20 V<br>Transient ± 30 V|Continuous ± 20 V<br>Transient ± 30 V| |**ID25**|TC = 25°C<br>170|170|A| |**IL(RMS)**<br>External Lead Current Limit 160<br>A<br>**IDM**<br>TC = 25°C, Pulse Width Limited by TJM350<br>A<br>**IA**<br>TC = 25°C<br>60<br>A<br>**EAS**<br>TC = 25°C<br>2<br>J<br>**dv/dt**<br>IS<br>≤IDM, VDD ≤VDSS, TJ ≤175°C 10 V/ns<br>~~rs~~|||| |**PD**|TC = 25°C 715|= 25°C 715|W| |**TJ**|-55 to +175 °C|-55 to +175 °C|-55 to +175 °C| |**TJM**|+175 °C|+175 °C|+175 °C| |**Tstg**-55 to +175|-55 to +175|-55 to +175|°C| |**TL**|1.6mm (0.063in) from Case for 10s 300|1.6mm (0.063in) from Case for 10s 300|°C| |**TSOLD**<br>**Md**|Plastic Body for 10s 260 °C<br>Mounting Torque (TO-264 & TO-3P) 1.13/10 Nm/lb.in.|Plastic Body for 10s 260 °C<br>Mounting Torque (TO-264 & TO-3P) 1.13/10 Nm/lb.in.|| |**Weight**|TO-268 4.0 g|TO-268 4.0 g|TO-268 4.0 g| ||TO-3P 5.5 g<br>TO-264 10.0 g|TO-3P 5.5 g<br>TO-264 10.0 g|TO-3P 5.5 g<br>TO-264 10.0 g| **==> picture [87 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D<br>S<br> Tab<br>**----- End of picture text -----**<br> **==> picture [60 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 (IXTK)<br>**----- End of picture text -----**<br> **==> picture [109 x 69] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D = Tab p<br>S<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance ## **Advantages** |(T= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**<br>~~rl~~|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>100|~~rl~~|V| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5 5.0 V|5.0 V<br>~~rl~~<br>~~a~~|5.0 V<br>| |**IGSS**<br>VGS = ± 20V, VDS= 0V|±100 nA<br>~~To:~~|±100 nA<br>~~To:~~| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 150°C<br>250 μA|25 μA<br>250 μA<br>~~To:~~|25 μA<br>250 μA<br>~~To:~~| |**RDS(on)**<br>VGS= 10V, ID= 0.5 • ID25, Note 1<br>9 m<br>VGS= 15V, ID= 350A 7|9 m<br>= 350A 7|9 mΩ<br> mΩ| High Power Density Easy to Mount Space Savings ## **Applications** Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls © 2010 IXYS CORPORATION, All Rights Reserved DS99176F(01/10) ## **IXTT170N10P IXTQ170N10P IXTK170N10P** |**Symbol**<br>(TJ= 25°C, Unless Otherwise Specified)|**Test Conditions**<br>C, Unless Otherwise Specified)|**Characteristic Values**<br>**Min. Typ. Max.**|**Characteristic Values**<br>**Min. Typ. Max.**|**Characteristic Values**<br>**Min. Typ. Max.**| |---|---|---|---|---| |**gfs**|VDS = 10V, ID= 0.5 • ID25, Note 1 50 72|, Note 1 50 72|, Note 1 50 72|S| |**Ciss**||6000|6000|pF| |**Coss**|VGS = 0V, VDS= 25V, f = 1MHz|2340|2340|pF| |**Crss**||730|730|pF| |**td(on)**|**Resistive Switching Times**|35|35|ns| |**tr**|VGS= 10V, VDS= 0.5 • VDSS, ID= 60A|50|50|ns| |**td(off)**|RG= 3.3Ω(External)|90|90|ns| |**tf**||33|33|ns| |**Qg(on)**||198|198|nC| |**Qgs**|VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|39|39|nC| |**Qgd**||107|107|nC| |**RthJC**|||0.21|0.21 °C/W| |**RthCS**|(TO-3P)|0.25|0.25|°C/W| |(TO-264)|(TO-264)|0.15|0.15|°C/W| **TO-3P (IXTQ) Outline** ## **Source-Drain Diode** |**Symbol**||**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|| |---|---|---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**IS**||C, Unless Otherwise Specified)**Min. Typ. Max.**<br>VGS= 0V<br>170|**Min. Typ. Max.**<br>170|A| |**ISM**<br>**VSD**<br>**trr**<br>**QRM**|}|Repetitive, Pulse Width Limited by TJM<br>350 A<br>IF= IS, VGS= 0V, Note 1<br>1.5 V<br>120<br>2.0<br>IF= 25A, -di/dt = 100A/μs,<br>VR= 50V, VGS= 0V|350 A<br>1.5 V|350 A<br>1.5 V<br>ns<br>μC| Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. **==> picture [93 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 (IXTT) Outline<br>**----- End of picture text -----**<br> **TO-264 AA ( IXTK) Outline** **==> picture [129 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 1 = Gate<br>Back Side 2 = Drain<br>3 = Source<br>Tab = Drain<br>Dim. Millimeter Inches<br>| Min. Max. Min. Max.<br>A 4.82 5.13 .190 .202<br>A1 2.54 2.89 .100 .114<br>A2 2.00 2.10 .079 .083<br>b 1.12 1.42 .044 .056<br>b1 2.39 2.69 .094 .106<br>b2 2.90 3.09 .114 .122<br>c 0.53 0.83 .021 .033<br>D 25.91 26.16 1.020 1.030<br>—<br>E 19.81 19.96 .780 .786<br>e 5.46 BSC .215 BSC<br>J 0.00 0.25 .000 .010<br>KL | 20.320.00 20.830.25 .000.800 .820.010<br>L1 2.29 2.59 .090 .102<br>PF<br>P | 3.17 3.66 .125 .144<br>Q 6.07 6.27 .239 .247<br>Q1 8.38 8.69 .330 .342<br>R p 3.81 4.32 .150 .170<br>R1 a 1.78 2.29 .070 .090<br>ST | 6.041.57 6.301.83 .238.062 .248.072<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXTT170N10P IXTQ170N10P IXTK170N10P** **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>180<br>VGS = 10V<br>160<br>9V<br>140<br>120 8V<br>100<br>80<br>7V<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 150ºC** **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>320<br>V GS = 10V<br>280<br>240<br>9V<br>200<br>160 8V<br>120<br>7V<br>80<br>6V<br>40<br>5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature** **==> picture [530 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 180 2.4<br>VGS = 10V<br>160 9V 2.2 V GS = 10V<br>140 2.0<br>8V<br>120 1.8 I D = 170A<br>100 1.6 I D = 85A<br>7V<br>80 1.4<br>60 1.2<br>6V<br>40 1.0<br>20 5V 0.8<br>0 0.6<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 175<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>3.0 180<br>V GS = 10V 160<br>2.6 15V - - - - - External Lead Current Limit<br>140<br>2.2 TJ = 175ºC 120<br>100<br>1.8<br>80<br>1.4 60<br>1.0 T J = 25ºC 40<br>20<br>0.6 0<br>0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 175<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2010 IXYS CORPORATION, All Rights Reserved ## **IXTT170N10P IXTQ170N10P IXTK170N10P** **==> picture [531 x 638] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>320 120<br>280 TJ = - 40ºC<br>100<br>T J = - 40ºC<br>240 25ºC<br> 150ºC 80 25ºC<br>200<br>160 60 150ºC<br>120<br>40<br>80<br>20<br>40<br>0 0<br>3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 320<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode Fig. 10. Gate Charge<br>350 10<br>9 VDS = 50V<br>300 I D = 85A<br>8<br> I G = 10mA<br>250 TJ = 25ºC 7<br>200 TJ = 150 º C 6<br>5<br>150<br>4<br>100 3<br>2<br>50<br>1<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 180 200<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100,000 1,000<br>f = 1 MHz<br>RDS(on) Limit 10ms 1ms 100µs<br>DC<br>10,000 Ciss 100<br>1,000 Coss 10<br>T J = 175ºC<br>C rss T C = 25ºC<br>Single Pulse<br>100 1<br>0 5 10 15 20 25 30 35 40 1 10 100<br>VDS - Volts VDS - Volts<br> - Siemens<br> - AmperesID gf s<br> - Volts<br> - Amperes GS<br>IS V<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTT170N10P IXTQ170N10P IXTK170N10P** ## **Fig. 13. Maximum Transient Thermal Impedance** **==> picture [525 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> 1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br> © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170N10P(8S)01-07-10-C **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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