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IXTT16P60P
MOSFET, P-CH, 600V, 16A, TO-268
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Channel Type:P Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V 0
- MSL: MSL 1 - Unlimited
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: PolarP Series
- Qualification: -
- Power Dissipation: 460W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-268 (D3PAK)
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 16A
- Drain Source On State Resistance: 0.72ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 8.65 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarP[TM]** ## **Power MOSFETs** ## **IXTH16P60P IXTT16P60P** **V = - 600V DSS I = - 16A D25 R ≤ 720m Ω DS(on)** P-Channel Enhancement Mode Avalanche Rated **==> picture [59 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 (IXTT)<br>**----- End of picture text -----**<br> |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|- 600|V| |**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|- 600|V| |**VGSS**|Continuous|±20|V| |**VGSM**|Transient|±30|V| |**ID25**|TC = 25°C|- 16|A| |**IDM**|TC = 25°C, Pulse Width Limited by TJM|- 48|A| |**IA**|TC = 25°C|- 16|A| |**EAS**|TC = 25°C|2.5|J| |**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|10|V/ns| |**PD**|TC = 25°C|460|W| |**TJ**||- 55 ... +150|°C| |**TJM**||150|°C| |**Tstg**||- 55 ... +150|°C| |**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C| |**TSOLD**|Plastic Body for 10s|260|°C| |**Md**|Mounting Torque (TO-247)|1.13 / 10|Nm/lb.in.| |**Weight**|**Weight**TO-268 4 g|TO-268 4 g|TO-268 4 g| |TO-247 6 g|TO-247 6 g|TO-247 6 g|TO-247 6 g| **==> picture [80 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D (Tab)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> ## **TO-247 (IXTH)** G = Gate D = Drain S = Source Tab = Drain ## **Features** International Standard Packages Avalanche Rated Rugged PolarP[TM] Process Fast intrinsic Diode Low Package Inductance ## **Advantages** Easy to Mount Space Savings High Power Density |(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**<br>~~=~~|**Min. Typ. Max.**<br>~~=~~| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**<br>~~=~~|**Min. Typ. Max.**<br>~~=~~| |**BVDSS**<br>VGS = 0V, ID= - 250μA<br>- 600<br>~~|~~|~~=~~<br>~~||~~|V<br>~~=~~| |**VGS(th)**<br>VDS = VGS, ID= - 250μA<br>- 2.0 - 4.0 V<br>~~|~~<br>~~||~~|- 2.0 - 4.0 V<br>~~||~~<br>~~||~~|- 2.0 - 4.0 V| |**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>~~|~~<br>~~||~~|±<br>~~| |~~<br>~~||~~|±100<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>- 25<br>TJ= 125°C<br>- 200<br>~~||~~|- 25<br>- 200<br>~~||~~<br>~~jo:~~|- 25<br>μA<br>- 200μA<br>~~jo:~~| |**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>720|720<br>~~jo:~~<br>~~||~~|720 mΩ<br>~~jo:~~| ## **Applications** High-Side Switches Push-Pull Amplifiers DC Choppers Current Regulators Automatic Test Equipment DS99988B(01/13) © 2013 IXYS CORPORATION, All Rights Reserved ## **IXTH16P60P IXTT16P60P** |**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**| |---|---|---| |**gfs**<br>VDS= -10V, ID= 0.5 • ID25, Note 1 11<br><br>|18<br>|S<br>| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br> <br>**Crss**<br>|5120<br>445<br>60|pF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3Ω(External)|29<br>25<br>60<br>38|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|92<br>27<br>23|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>|<br>0.21|0.27°C/W<br>°C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**| |---|---|---| |**IS**<br>VGS= 0V||- 16 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||- 64 A| |**VSD**<br>IF= - 8A, VGS= 0V, Note 1||- 2.8 V| |**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= - 8A, -di/dt = -150A/μs<br>VR= -100V, VGS= 0V|440<br>7.4<br>- 33.6|ns<br>μC<br>A| Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ||**TO-247**|**TO-247**|**TO-247**|**TO-247**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||||| ||||||||||||||||||||||| ||||||||||||||||||||||| ||||||||||||||||||||||| ||||||||||||||||||||||| ||||||||||||||||||||||| |||||||||**1**|||**2**||**3**||∅P||||||| ||||||||||||||||||||||| ||Terminals:||||||||1 -|||~~e~~<br>Gate||||2 - Drain|||||| ||||||||||3 -|||Source|||||||||| |||Dim.||||Millimeter<br>Min.<br>Max.||||||||||Inches<br>Min.<br>Max.|||||| ||||A||||4.7||||||5.3|||.185||.209|||| ||||A1<br>A2||||2.2<br>2.2||||||2.54<br>2.6|||.087<br>.059||.102<br>.098|||| ||||b<br>b1|||1.0<br>1.65|||||||1.4<br>2.13|||.040<br>.065||.055<br>.084|||| ||||b~~2~~|||2.87|||||||3.12|||.113||.123|||| ||||C|||||.4|||||.8|||.016||.031|||| ||||D|||20.80|||||||21.46|||.819||.845|||| ||||E|||15.75|||||||16.26|||.610||.640|||| ||||e<br>L|||5.20<br>19.81|||||||5.72<br>20.32||0.205 0.225<br>.780<br>.800||||||| ||||L1||||||||||4.50|||||.177|||| ||||∅P<br>Q|||3.55<br>5.89|||||||3.65<br>6.40||.140<br>.144<br>0.232 0.252||||||| ||||R<br>S|||4.32<br>6.15|||||5.49<br> BSC|||||.170<br>.216<br>242 BSC|||||| ||||||||||||||||||||||| ## **TO-268 Outline** **==> picture [157 x 116] intentionally omitted <==** **==> picture [131 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Terminals: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXTH16P60P IXTT16P60P** **==> picture [538 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-16 -38<br>V GS = -10V VGS = -10V<br>-14 - 7V -34 - 7V<br>-30<br>-12<br>-26<br>- 6V<br>-10<br>-22<br>-8 - 6V<br>-18<br>-6 -14<br>-4 -10<br>- 5V -6<br>-2 - 5V<br>-2<br>0<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 0 -5 -10 -15 -20 -25 -30<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = - 8A Value vs. Junction Temperature** **==> picture [255 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics @ TJ = 125ºC<br>-16<br>VGSGS = -10V<br>-14 - 7V<br>-12<br>- 6V<br>-10<br>-8<br>-6<br>- 5V<br>-4<br>-2<br>0<br>0 -5 -10 -15 -20<br>VDS - VoltsDS - Volts - Volts<br> - Amperes<br>IDD<br>**----- End of picture text -----**<br> **==> picture [532 x 396] intentionally omitted <==** **----- Start of picture text -----**<br> -16 2.4<br>VGSGS = -10V<br>-14 - 7V VGS = -10V<br>2.0<br>-12<br>- 6V I D = -16A<br>-10<br>1.6<br>I D = - 8A<br>-8<br>1.2<br>-6<br>- 5V<br>-4<br>0.8<br>-2<br>0 0.4<br>0 -5 -10 -15 -20 -50 -25 0 25 50 75 100 125 150<br>VDS - VoltsDS - Volts - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 8A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.2 -18<br>2.0 VGS = -10V T J = 125ºC -16<br>-14<br>1.8<br>-12<br>1.6 -10<br>1.4 -8<br>-6<br>1.2<br>T J = 25ºC -4<br>1.0<br>-2<br>0.8 0<br>0 -5 -10 -15 -20 -25 -30 -35 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>IDD<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved ## **IXTH16P60P IXTT16P60P** **==> picture [538 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>-20 32<br>T J = - 40ºC<br>-18<br>28<br>-16<br>24<br>25ºC<br>-14<br>-12 25ºCT J = 125ºC 20 125 º C<br>-10 - 40 º C 16<br>-8<br>12<br>-6<br>8<br>-4<br>4<br>-2<br>0 0<br>-3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -5 -10 -15 -20<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>-50 -10<br>-45 -9 VDS = - 300V<br> I D = - 8A<br>-40 -8<br> I G = -1mA<br>-35 -7<br>-30 -6<br>-25 -5<br>-20 T J = 125ºC -4<br>-15 -3<br>TJ = 25ºC<br>-10 -2<br>-5 -1<br>0 0<br>-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 10 20 30 40 50 60 70 80 90 100<br>VSD - Volts QG - NanoCoulombs<br> - Amperes - Siemens<br>ID gf s<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [533 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 - 100<br>Ciss R DS(on) Limit<br>100µs<br>1,000 -10<br>1ms<br>Coss DC<br>100ms<br>100 - 1 10ms<br>C rss T TJ C = 150 = 25ºC ºC<br>f = 1 MHz Single Pulse<br>10 - 0.1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 -10 - 100 - 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTH16P60P IXTT16P60P** **==> picture [538 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_16P60P (B7) 6-03-08 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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