IXTQ88N30P

Power MOSFET, PolarFET, N Channel, 300 V, 88 A, 0.04 ohm, TO-3P, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 600W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-3P
Drain Source Voltage Vds: 300V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 88A
Drain Source On State Resistance: 0.04ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	5.92 €
Current stock	10+
Lead time	30 days

Datasheet

## **PolarHT[TM] Power MOSFET** 

**IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P** 

**V =  300     V DSS I =    88    A D25 R ≤ 40    m Ω DS(on)** 

N-Channel Enhancement Mode Avalanche Rated 

|Avalanche Rated|Avalanche Rated||**TO-247 (IXTH)**||||
|---|---|---|---|---|---|---|
|**Symbol**<br>**VDSS**<br>**VDGR**|**Test Conditions**<br>TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ|**Maximum Ratings**<br>300<br>V<br>300<br>V|G<br>D S||D (TAB)||
|**VGS**|Continuous|±20<br>V|**TO-264 (IXTK)**||||
|**VGSM**|Transient|±30<br>V|||||
|**ID25**|TC = 25°C|88<br>A|||||
|**ID(RMS)**|External lead current limit|75<br>A|||||
|**IDM**|TC = 25°C, pulse width limited by TJM|220<br>A|||||
|**IAR**|TC = 25°C|60<br>A|G D S||||
|**EAR**<br>**EAS**|TC = 25°C<br>TC = 25°C|60<br>mJ<br>2.0<br>J|**TO-3P (IXTQ)**|D (TAB)|||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS|10<br>V/ns|||||
|TJ ≤150°C, RG= 4Ω<br>**PD**<br>TC = 25°C<br>600<br>W<br>**TJ**<br>-55 ... +150<br>°C<br>**TJM**<br>150<br>°C<br>**Tstg**<br>-55 ... +150<br>°C<br>~~a~~|||G<br>D S<br>(TAB)<br>ad||||
|**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>Plastic body for 10 s|300<br>°C<br>260<br>°C|**TO-268 (IXTT)**||||
|**Md**<br>Mounting torque<br>1.13/10 Nm/lb.in.<br>**Weight**<br>TO-247<br>6.0               g<br>TO-264<br>10               g<br>TO-3P & TO-268<br>5.5g<br>G<br>S<br>~~i~~|||||D (TAB)||
||||G = Gate<br>D = Drain||||
|**Symbol**|**Test Conditions**<br>**Characteristic Values**||S = Source<br>TAB = Drain||||
|(TJ= 25°C, unless otherwise specified)<br>**Min.    Typ.**<br>**Max.**|||**Features**||||
|**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**|VGS = 0 V, ID= 250µA<br>300<br>VDS = VGS, ID= 250µA<br>2.5<br>VGS =±20 VDC, VDS= 0<br>VDS =  VDSS<br>VGS= 0 V<br>TJ= 125°C|V<br>5.0<br>V<br>±100<br>nA<br>100<br>µA<br>1<br>mA<br>~~|~~<br>~~~-~~|l International standard package<br>l Unclamped Inductive Switching (UIS)<br>rated<br>l Low package inductance<br>- easy to drive and to protect<br>**Advantages**<br>l Easy to mount<br>~~|~~||||
|**RDS(on)**|VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, duty cycle d≤2 %|40<br>mΩ|l Space savings<br>l High power density||||



DS99129E(12/05) 

© 2006 IXYS All rights reserved 

**IXTH 88N30P   IXTK 88N30P IXTQ 88N30P   IXTT 88N30P** 

|**IXTQ 88N30P**|**IXTQ 88N30P**|**IXTQ 88N30P**|
|---|---|---|
|**Symbol**<br>**Test Conditions                                                Characteristic Values**<br>(TJ= 25°C unless otherwise specified)|||
|**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>45|60|S|
|**Ciss**<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**|6300<br>950<br>190|pF<br>pF<br>pF|
|**td(on)**<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 60 A<br>**td(off)**<br>RG= 3.3Ω(External)<br>**tf**|25<br>24<br>96<br>25|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>**Qgd**|180<br>44<br>90|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>TO-247 and TO-3P<br>**RthCS**TO-264|0.21<br>0.15|0.21°C/W<br>°C/W<br>°C/W|
||||
|**Source-Drain Diode                                                                Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.     Typ.**<br>**Max.**|||
|**IS**<br>VGS= 0 V||88<br>A|
|**ISM**<br>Repetitive||220<br>A|
|**VSD**<br>IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %||1.5<br>V|
|**trr**<br>IF= 25 A,  -di/dt = 100 A/µs<br>**Q**<br>V= 100 V,  V= 0 V|250<br>3.3|ns<br>µC|
|**RM**<br>R GS|||



|**Source-Drain**|**Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|---|
|||(TJ= 25°C, unless otherwise specified)||||
|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**||
|**IS**|VGS= 0 V|||88|A|
|**ISM**|Repetitive|||220|A|
|**VSD**|IF= IS, VGS= 0 V,|||1.5|V|
||Pulse test, t≤300µs, duty|cycle d≤2 %||||
|**trr**|IF= 25 A,  -di/dt = 100 A/µs||250||ns|
|**QRM**|VR= 100 V,  VGS= 0 V||3.3||µC|



## **Characteristic Curves** 

**==> picture [473 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics  Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>90 200<br>80 VGS = 10V 180 V GS = 10V<br>          9V           9V<br>          8V 160<br>70<br>140 8V<br>60<br>120<br>50<br>7V<br>7V 100<br>40<br>80<br>30<br>60<br>20 6V 40 6V<br>10 20<br>5V 5V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 18 20<br>VD S - Volts VD S - Volts<br> - Amperes  - Amperes<br>I D I D<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 6,710,463 6771478 B2 

## **IXTH 88N30P   IXTK 88N30P IXTQ 88N30P   IXTT 88N30P** 

**==> picture [242 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics<br>@ 125ºC<br>90<br>VGS = 10V<br>80<br>          9V<br>          8V<br>70<br>60 7V<br>50<br>40<br>6V<br>30<br>20<br>10 5V<br>0<br>0 1 2 3 4 5 6 7 8 9<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID** 

**==> picture [234 x 410] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.4<br>3.2 V GS  = 10V<br>3<br>2.8<br>2.6 T J = 125ºC<br>2.4<br>2.2<br>2<br>1.8<br>1.6<br>1.4<br>1.2 T J  = 25ºC<br>1<br>0.8<br>0 20 40 60 80 100 120 140 160 180 200<br>I D - Amperes<br>Fig. 7. Input Admittance<br>160<br>140<br>120<br>100<br>80<br>60<br> TJ = 125ºC<br>40          25ºC<br>        -40ºC<br>20<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8<br>VG S - Volts<br>  - Normalized<br>D S (on)<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature** 

**==> picture [233 x 626] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2.8 V GS  = 10V<br>2.6<br>2.4<br>2.2<br>2<br>1.8<br>1.6 I D = 88A<br>1.4 I D  = 44A<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Tem perature<br>90<br>External Lead Current Limit<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br>Fig. 8. Transconductance<br>100<br>90<br>80 TJ = -40ºC<br>       25ºC<br>70      125ºC<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 160 180<br>I D - Amperes<br>  - Normalized<br>D S (on)<br>R<br> - Amperes<br>D<br>I<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**IXTH 88N30P   IXTK 88N30P IXTQ 88N30P   IXTT 88N30P** 

**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**Fig. 10. Gate Charge** 

**==> picture [230 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9 VDSDS = 150V<br>8 I D = 44A<br>IG = 10mAG = 10mA= 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180<br>Q G - nanoCoulombsG - nanoCoulombs - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**==> picture [499 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
280 10<br>9 VDSDS = 150V<br>240<br>8 I D = 44A<br>IG = 10mAG = 10mA= 10mA<br>200 7<br>6<br>160<br>5<br>120<br>4<br>80 TJ = 125ºC 3<br>2<br>40 TJ = 25ºC<br>1<br>0 0<br>0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 180<br>VS D - Volts Q G - nanoCoulombsG - nanoCoulombs - nanoCoulombs<br>Fig. 12. Forward-Bias<br>Fig. 11. Capacitance<br>Safe Operating Area<br>10000 1000<br>TJ = 150ºC<br>C iss RDS(on) Limit TC = 25ºC<br>25µs<br>100 100µs<br>Coss 1ms<br>1000<br>10ms<br>10<br>DC<br>f  = 1MHz Crss<br>100 1<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VD S - Volts VD S - Volts<br>Fig. 13. Maximum Transient Thermal Resistance<br>1.00<br>0.10<br>0.01<br>1 10 100 1000<br>Pulse Width - milliseconds<br> - Volts<br> - Amperes G S<br>I S V<br> - Amperes<br>D<br>I<br>Capacitance - picoFarads<br>ºC / W<br> -<br>(th) J C<br>R<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**IXTH 88N30P   IXTK 88N30P IXTQ 88N30P   IXTT 88N30P** 

## **TO-247 (IXTH) Outline** 

**==> picture [99 x 95] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1       2       3<br>oH,> b2 |<br>Le.<br>Terminals:<br>1. Gate      2,4. Drain<br>3. Source<br>**----- End of picture text -----**<br>


**==> picture [90 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-3P (IXTQ) Outline<br>**----- End of picture text -----**<br>


## **TO-268 (IXTT) Outline** 

**==> picture [99 x 29] intentionally omitted <==**

**----- Start of picture text -----**<br>
Terminals:<br>1. Gate      2,4. Drain<br>3. Source<br>**----- End of picture text -----**<br>


|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>A1<br>A2<br>b<br>b1<br>b2<br>C<br>D<br>E|4.7<br>5.3<br>2.2<br>2.54<br>2.2<br>2.6<br>1.0<br>1.4<br>1.65<br>2.13<br>2.87<br>3.12<br>.4<br>.8<br>20.80<br>21.46<br>15.75<br>16.26|.185<br>.209<br>.087<br>.102<br>.059<br>.098<br>.040<br>.055<br>.065<br>.084<br>.113<br>.123<br>.016<br>.031<br>.819<br>.845<br>.610<br>.640|
|e<br>L<br>L1|5.20<br>5.72<br>0.205 0.225<br>19.81<br>20.32<br>.780<br>.800<br>4.50<br>.177||
|∅P<br>Q|3.55<br>3.65<br>.140<br>.144<br>5.89<br>6.40<br>0.232 0.252||
|R<br>S|4.32<br>5.49<br>6.15 BSC|.170<br>.216<br>242 BSC|



## **TO-264  (IXTK) Outline** 

© 2006 IXYS All rights reserved 

**==> picture [157 x 46] intentionally omitted <==**

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Updated at April 27, 2026

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