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IXTQ82N25P
Power MOSFET, N Channel, 250 V, 82 A, 0.038 ohm, TO-3P, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar
- Qualification: -
- Power Dissipation: 500W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-3P
- Drain Source Voltage Vds: 250V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 82A
- Drain Source On State Resistance: 0.038ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.09 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **IXTT82N25P IXTQ82N25P IXTK82N25P** ## **Polar[TM] Power MOSFET** N-Channel Enhancement Mode Avalanche Rated |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25C to 150C|250|V| |**VDGR**|TJ = 25C to 150C, RGS= 1M|250|V| |**VGSS**|Continuous|20|V| |**VGSM**<br>~~oe~~|Transient<br>~~oe~~|30<br>~~oe~~|V<br>~~oe~~| |**ID25**|TC = 25C|82|A| |**ILRMS**|Lead Current Limit 75 A|Lead Current Limit 75 A|Lead Current Limit 75 A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|200|A| |**PD**|TC = 25C|500|W| |**TJ**||-55 ... +150|C| |**TJM**||150|C| |**Tstg**||-55 ... +150|C| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C| |**Md**|Mounting Torque (TO-3P&TO-264)<br>1.13 / 10|1.13 / 10|Nm/lb.in| |**Weight**|TO-268|4.0|g| |TO-3P|TO-3P|5.5 g|5.5 g| ||TO-264<br>10.0 g|10.0 g|10.0 g| **V = 250V DSS I = 82A D25 R 38m DS(on)** **==> picture [123 x 281] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 (IXTT)<br>G<br>S<br>D (Tab)<br>TO-3P( IXTQ)<br>G<br>D<br>S<br>D (Tab)<br>TO-264 (IXTK)<br>G<br>D<br>S<br>D (Tab)<br>G = Gate D = Drain<br>S = Source Tab = Drain<br>**----- End of picture text -----**<br> ## **Features** - Fast Intrinsic Rectifier - Avalanche Rated - Low RDS(ON) and QG Low Package Inductance |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>250|~~||~~|V| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5 5.0 V|2.5 5.0 V<br>~~||~~<br>~~|~~|2.5 5.0 V| |**IGSS**<br>VGS =20V, VDS= 0V|<br>~~~~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>250|25<br>250<br>~~~~~|25A<br>250A| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|38 m<br>~~|~~|38 m| ## **Advantages** - High Power Density - Easy to Mount - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters - Laser Drivers - AC and DC Motor Drives - Robotics and Servo Controls DS99121F(7/14) © 2014 IXYS All Rights Reserved **IXTT82N25P IXTQ82N25P IXTK82N25P** |**Symbol**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|| |---|---|---|---|---|---|---| |(TJ= 25C, Unless Otherwise Specified)|C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**|| |**gfs**|VDS= 10V, ID= 0.5 • ID25, Note 1 30 52 S|, Note 1 30 52 S<br>~~| |~~|||, Note 1 30 52 S|, Note 1 30 52 S| |**Ciss**||4800|4800|||pF| |**Coss**|VGS= 0V, VDS= 25V, f = 1MHz|900|900|||pF| |**Crss**||210|210|||pF| |**td(on)**|**Resistive Switching Times**|29|29||ns|ns| |**tr**<br>**td(off)**<br>**tf**|20<br>78<br>22<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1 (External)||20<br>78<br>22|||ns<br>ns<br>ns| |**Qg(on)**||142|142|||nC| |**Qgs**|32<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||32|||nC| |**Qgd**||74|74|||nC| |**RthJC**||0.25|0.25|0.25|0.25C/W|| |**RthCS**|TO-3P 0.21|TO-3P 0.21|TO-3P 0.21|TO-3P 0.21|TO-3P 0.21C/W|| |TO-264 0.15|TO-264 0.15|TO-264 0.15|TO-264 0.15|TO-264 0.15|TO-264 0.15C/W|| |**Source-Drain Diode**||||||| |**Symbol**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**||**Test Conditions Characteristic Values**||| |(TJ= 25C, Unless Otherwise Specified)|C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**|| |**IS**|VGS= 0V, Note1||82 A|82 A|82 A|82 A| |**ISM**<br>**VSD**|Repetitive, pulse Width Limited by TJM<br>IF= IS, VGS= 0V, Note 1||328 A<br>1.4 V|328 A<br>1.4 V|328 A<br>1.4 V|328 A<br>1.4 V| |**trr**<br>**QRM**|2<br>IF= 25A, -di/dt = 100A/μs<br>VR= 100V|200<br>2|200<br>2||ns<br>C|| Note 1. Pulse test, t 300s, duty cycle, d 2%. |**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|**TO-268 Outline**|||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||||||| ||||||||||||||||||||||||| ||||||||||||||~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~|~~:~~<br>~~i~~<br>~~i~~| ||||||||||||||||||||||||| |~~t~~<br>e~~n~~|||||7<br> ~~+~~b||||||||4<br>1||||||'||||| ||||||||||||||||||||||||| ||||||||||||||||||||||||| ||||||||||||||~~1~~<br>i||~~_¢—~~<br>¥||||||||| ||||||||||||||||||||||||| ||||||||||||||||||||||||| ||Terminals:||||||||||1 - Gate|||||||2,4 - Drain|||2,4 - Drain||| ||||||||||||3 - Source||||||||||||| **==> picture [61 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> TO-3P Outline<br>**----- End of picture text -----**<br> ## **TO-264 AA Outline** **==> picture [131 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> Terminals: 1 - Gate<br>2 - Drain<br>Foq—4___Ihop e- 3 - Source<br>4 - Drain<br>Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 4.82 5.13 .190 .202<br>A1 2.54 2.89 .100 .114<br>A2 2.00 2.10 .079 .083<br>b 1.12 1.42 .044 .056<br>b1 2.39 2.69 .094 .106<br>b2 2.90 3.09 .114 .122<br>c 0.53 0.83 .021 .033<br>D 25.91 26.16 1.020 1.030<br>E 19.81 19.96 .780 .786<br>e 5.46 BSC .215 BSC<br>J 0.00 0.25 .000 .010<br>K 0.00 0.25 .000 .010<br>L 20.32 20.83 .800 .820<br>L1 2.29 2.59 .090 .102<br>P 3.17 3.66 .125 .144<br>Q 6.07 6.27 .239 .247<br>Q1 8.38 8.69 .330 .342<br>R 3.81 4.32 .150 .170<br>R1 1.78 2.29 .070 .090<br>S 6.04 6.30 .238 .248<br>T 1.57 1.83 .062 .072<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTT82N25P IXTQ82N25P IXTK82N25P** **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>90<br>V GS = 10V<br>80 9V<br>70 8V<br>60<br>50<br>7V<br>40<br>30<br>20<br>6V<br>10<br>5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>200 V GS = 10V<br>180<br>160<br>9V<br>140<br>120<br>100 8V<br>80<br>60<br>40 7V<br>20<br>0 6V<br>0 5 10 15 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [535 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 41A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>90 3.0<br>80 V 9V GS = 10V V GS = 10V<br>2.6<br>70 8V<br>2.2 I D = 82A<br>60<br>50 7V 1.8<br>I D = 41A<br>40 1.4<br>30<br>6V 1.0<br>20<br>0.6<br>10 5V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 41A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.8 80<br>3.4 VGS = 10V 70 External Lead Current Limit<br>3.0 60<br>TJ = 125ºC<br>2.6 50<br>2.2 40<br>1.8 30<br>1.4 TJ = 25 º C 20<br>1.0 10<br>0.6 0<br>0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2014 IXYS All Rights Reserved ## **IXTT82N25P IXTQ82N25P IXTK82N25P** **==> picture [537 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>180 80<br>T J = - 40ºC<br>160 70<br>140<br>60<br>25ºC<br>120<br>50<br>100<br>40 125ºC<br>80<br>30<br>60<br>TJ = 125ºC<br>20<br>40 25ºC<br> - 40ºC<br>20 10<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 20 40 60 80 100 120 140 160 180<br>VGS - Volts ID - Amperes<br> - Siemens<br> - AmperesID gf s<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>240<br>220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60 TJ = 125ºC<br>40 TJ = 25ºC<br>20<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 10. Gate Charge<br>10<br>9 VDS = 125V<br> I D = 41A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [540 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>10,000 1000<br>Ciss<br>100 RDS(on) Limit 25µs<br>Coss 100µs<br>1,000<br>1ms<br>10<br>DC 10ms<br>Crss TJ = 150ºC<br>TC = 25ºC<br>f = 1 MHz Single Pulse<br>100 1<br>0 5 10 15 20 25 30 35 40 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXTT82N25P IXTQ82N25P IXTK82N25P** **Fig. 13. Maximum Transient Thermal Impedance** 1 **==> picture [523 x 256] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>AAAAA<br>0.3<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2014 IXYS All Rights Reserved IXYS REF: T_82N25P (7J) 7-16-14-B **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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