IXTQ69N30P

Power MOSFET, N Channel, 300 V, 69 A, 0.049 ohm, TO-3P, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
SVHC: No SVHC (12-Jan-2017)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: Polar
Qualification: -
Power Dissipation: 500W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-3P
Drain Source Voltage Vds: 300V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 69A
Drain Source On State Resistance: 0.049ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	4.18 €
Current stock	200+
Lead time	30 days

Datasheet

## **Polar[TM]** 

## **Power MOSFET** 

## **IXTT69N30P IXTQ69N30P** 

**V =   300V DSS I =   69A D25 R ≤ 49m Ω DS(on)** 

N-Channel Enhancement Mode Avalanche Rated 

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TO-268 (IXTT)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**||
|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C||300                    V||300                    V|300                    V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ||300                          V||300                          V|300                          V|
|**VGSS**|Continuous                                                              ± 20                       V|Continuous                                                              ± 20                       V|Continuous                                                              ± 20                       V||Continuous                                                              ± 20                       V|Continuous                                                              ± 20                       V|
|**VGSM**|Transient                                                                               ± 30                            V|Transient                                                                               ± 30                            V|Transient                                                                               ± 30                            V||Transient                                                                               ± 30                            V|Transient                                                                               ± 30                            V|
|**ID25**|TC = 25°C|69|69|69||A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM200||200|200||A|
|**IA**|TC = 25°C|69|69|69||A|
|**EAS**|TC = 25°C||1.5|1.5||J|
|**dv/dt**|IS<br><IDM, VDD<br><VDSS, TJ|J<br><150°C|15|15|V/ns||
|**PD**|TC = 25°C                                                                    500|= 25°C                                                                    500|= 25°C                                                                    500|||W|
|**TJ**|-55 to +150                       °C|-55 to +150                       °C|-55 to +150                       °C||-55 to +150                       °C|-55 to +150                       °C|
|**TJM**|+150                       °C|+150                       °C|+150                       °C||+150                       °C|+150                       °C|
|**Tstg**-55 to +150|-55 to +150|-55 to +150|-55 to +150|||°C|
|**TL**|1.6mm (0.063in) from Case for 10s                             300||1.6mm (0.063in) from Case for 10s                             300|||°C|
|**TSOLD**<br>Plastic Body for 10s                                                      260                       °C<br>~~eee~~|||||||
|**Md**<br>Mounting Torque  (TO-3P)                                       1.13/10              Nm/lb.in.<br>~~eee~~|||||||
|**Weight**|TO-268                                                                         4.0                         g|TO-268                                                                         4.0                         g|TO-268                                                                         4.0                         g|TO-268                                                                         4.0                         g|TO-268                                                                         4.0                         g|TO-268                                                                         4.0                         g|
||TO-3P                                                                              5.5                          g|TO-3P                                                                              5.5                          g|TO-3P                                                                              5.5                          g|TO-3P                                                                              5.5                          g|TO-3P                                                                              5.5                          g|TO-3P                                                                              5.5                          g|
|**Symbol**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**||||
|(TJ= 25°C, Unless Otherwise Specified)|= 25°C, Unless Otherwise Specified)<br>**Min.       Typ.        Max.**||**Min.       Typ.        Max.**|**Min.       Typ.        Max.**|**Min.       Typ.        Max.**||
|**BVDSS**|VGS = 0V, ID= 250μA|300|300|||V|
|**VGS(th)**|VDS = VGS, ID= 250μA|2.5                          5.0     V|2.5                          5.0     V|2.5                          5.0     V|2.5                          5.0     V|2.5                          5.0     V|
|**IGSS**<br>**IDSS**<br>**RDS(on)**|VGS = ± 20V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>TJ= 125°C<br>VGS= 10V, ID= 0.5 • ID25, Note 1||±100   nA<br>5   μA<br>100   μA<br>49  m<br>~~| |~~<br>~~7~~<br>~~||~~||±100   nA<br>5   μA<br>100   μA<br>49  m|±100   nA<br>5   μA<br>100   μA<br>49  mΩ|



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G<br>S<br>    Tab<br>**----- End of picture text -----**<br>


## **TO-3P (IXTQ)** 

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G<br>D s=a- A<br>S<br>    Tab<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance 

## **Advantages** 

High Power Density Easy to Mount Space Savings 

## **Applications** 

DC-DC Coverters Battery Chargers Switch-Mode and Resonant-Mode e Power Supplies DC Choppers :e AC and DC Motor Drives e Uninterrupted Power Supplies e High Speed Power Switching Applications 

© 2009 IXYS CORPORATION, All Rights Reserved 

DS99078F(10/09) 

## **IXTQ69N30P IXTT69N30P** 

|**Symbol**<br>(TJ= 25°C,|**Test Conditions**<br>Unless Otherwise Specified)|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|
|---|---|---|---|---|---|
|**gfs**|VDS = 10V, ID= 0.5 • ID25, Note 1|30|48||S|
|**Ciss**|||4960||nF|
|**Coss**|VGS = 0V, VDS= 25V, f = 1MHz||760||pF|
|**Crss**|||190||pF|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= ID25<br>RG= 4Ω(External)|<br> <br> <br>|25<br>25<br>75<br>27||ns<br>ns<br>ns<br>ns|
|**Qg(on)**|||156|180|nC|
|**Qgs**|VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||32||nC|
|**Qgd**|||79||nC|
|**RthJC**||||0.25|°C/W|
|**RthCS**|TO-3P||0.21||°C/W|



## **Source-Drain Diode** 

|**Symbol**|**Test Conditions**|**Characteristic**|**Characteristic**|**Values**||
|---|---|---|---|---|---|
|(TJ= 25°C,|Unless Otherwise Specified)|**Min.**|**Typ.**|**Max.**||
|**IS**|VGS= 0V|||69|A|
|**ISM**|Repetitive, Pulse Width Limited by TJM|||270|A|
|**VSD**|IF= IS, VGS= 0V, Note 1|||1.5|V|
|**trr**|<br>IF= 25A, -di/dt = 100A/μs,||330||ns|
|**QRM**|<br>VR= 100V, VGS= 0V||4.13||μC|



Note  1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

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TO-3P (IXTQ) Outline<br>**----- End of picture text -----**<br>


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TO-268 (IXTT) Outline<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTQ69N30P IXTT69N30P** 

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Fig. 1. Output Characteristics @ TJ = 25ºC<br>70<br>V GS = 10V<br>         8V<br>60<br>50<br>7V<br>40<br>30<br>6V<br>20<br>10<br>5V<br>0<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>180<br>VGS = 10V<br>160           9V<br>140 8V<br>120<br>100<br>7V<br>80<br>60<br>6V<br>40<br>20<br>5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 34.5A Value<br>Fig. 3. Output Characteristics @ TJ = 125ºC vs. Junction Temperature<br>70 3.4<br>60 V           8V GS = 10V  3.0 VGS = 10V<br>7V<br>2.6<br>50<br>6V 2.2 I  D  = 69A<br>40<br>1.8<br>30 I D = 34.5A<br>1.4<br>20<br>5V 1.0<br>10 0.6<br>0 0.2<br>0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 34.5A Value Fig. 6. Maximum Drain Current<br> vs. Drain Current  vs. Case Temperature<br>4.0 80<br>VGS = 10V  70<br>3.5<br>TJ = 125ºC<br>60<br>3.0<br>50<br>2.5<br>40<br>2.0<br>30<br>1.5<br>T J = 25ºC 20<br>1.0 10<br>0.5 0<br>0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized  - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

## **IXTQ69N30P IXTT69N30P** 

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Fig. 7. Input Admittance Fig. 8. Transconductance<br>90 80<br>80 70 TJ = - 40ºC<br>70<br>60<br>60 25ºC<br>50<br>50<br>125ºC<br>TJ = 125ºC 40<br>40           25ºC<br>        - 40ºC 30<br>30<br>20<br>20<br>10 10<br>0 0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40 50 60 70 80 90<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>200 10<br>180 9  VDS = 150V<br> I D = 34.5A<br>160 8<br> I G = 10mA<br>140 7<br>120 6<br>100 5<br>80 4<br>60 T J = 125ºC 3<br>2<br>40<br>T J   = 25ºC 1<br>20<br>0<br>0<br>0 20 40 60 80 100 120 140 160<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>10,000 1,000.0<br>R DS(on)  Limit<br>Ciss 100.0 25µs<br>100µs<br>1,000 10.0<br>1ms<br>Coss<br>1.0  TJ = 150ºC 10ms<br>100ms<br> T C  = 25ºC<br>f = 1 MHz   Single Pulse  DC<br>Crss<br>100 0.1<br>0 5 10 15 20 25 30 35 40 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Siemens<br> - AmperesID gf s<br> - Volts<br> - Amperes GS<br>IS V<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTQ69N30P IXTT69N30P** 

**Fig. 12. Maximum Transient Thermal Impedance** 

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1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_69N30P(7S)10-16-09-A 

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Updated at April 29, 2026

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