Image not available
Illustrative purposes only
IXTQ52N30P
Power MOSFET, N Channel, 300 V, 52 A, 0.073 ohm, TO-3P, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar
- Qualification: -
- Power Dissipation: 400W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-3P
- Drain Source Voltage Vds: 300V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 52A
- Drain Source On State Resistance: 0.073ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.38 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM]** ## **Power MOSFETs** ## **IXTT52N30P IXTQ52N30P** **V = 300V DSS I = 52A D25 R 73m DS(on)** N-Channel Enhancement Mode Avalanche Rated **==> picture [109 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 (IXTT)<br>G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br> |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|| |---|---|---|---|---| |**VDSS**|TJ = 25C to 150C|300||V| |**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>300<br>V<br>~~SO~~||||| |**VGSS**<br>**VGSM**<br>**ID25**<br>**IDM**<br>~~BS~~|Continuous<br>Transient<br>TC = 25C<br>52<br>TC = 25C, Pulse Width Limited by TJM|20<br>30<br>52<br>150||V<br>V<br>A<br>A| |**IA**|TC = 25C|52||A| |**EAS**|TC = 25C|1||J| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 10 V/ns|150°C 10 V/ns|150°C 10 V/ns|150°C 10 V/ns| |**PD**|TC = 25C|400||W| |**TJ**||-55 ... +150|C|| |**TJM**||150|C|| |**Tstg**||-55 ... +150|C|| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300||°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260 °C|1.6 mm (0.062in.) from Case for 10s 260 °C|1.6 mm (0.062in.) from Case for 10s 260 °C|1.6 mm (0.062in.) from Case for 10s 260 °C| |**Md**|Mounting Torque (TO-3P)<br>1.13 / 10|1.13 / 10|Nm/lb.in|| |**Weight**|TO-286<br>4.0 g|4.0 g|4.0 g|4.0 g| |TO-3P|TO-3P<br>5.5|5.5||g| **TO-3P (IXTQ)** G D S D (Tab) _ ~~_~~ S G = Gate D = Drain S = Source Tab = Drain ## **Features** - Fast Intrinsic Rectifier - Avalanche Rated Low RDS(ON) and QG Low Package Inductance ## **Advantages** - High Power Density - Easy to Mount Space Savings ## **Applications** |**Symbol**<br>(T= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>300<br>~~|~~|~~|~~<br>~~|~~|V<br>| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5<br>5.0 V<br>~~|~~|5.0 V<br>~~||~~|5.0 V<br>~~|~~| |**IGSS**<br>VGS =20V, VDS= 0V<br><br>~~|~~|<br>~~||~~|100 nA<br>~~|~~| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>250<br>~~|~~|25<br>250<br>~~7~~<br>~~||~~|25A<br>250A<br>~~7~~| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>73 m<br>~~|~~|73 m<br>~~7~~<br>~~||~~|73 m<br>~~7~~| - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99115F(9/13) © 2013 IXYS CORPORATION, All Rights Reserved **IXTT52N30P IXTQ52N30P** |**Symbol**|**Test Conditions**|**Characteristic**|**Characteristic**|**Values**| |---|---|---|---|---| |(TJ= 25C|Unless Otherwise Specified)|**Min.**|**Typ. **|**Max.**| |**gfs**|VDS= 10V, ID= 0.5 • ID25, Note 1|20|30|S| |**Ciss**|||3490|pF| |**Coss**|VGS= 0V, VDS= 25V, f = 1MHz||550|pF| |**Crss**|||130|pF| |**td(on)**|**Resistive Switching Times**||24|ns| |**tr**<br>**td(off)**<br>**tf**|<br> <br> <br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 4(External)|<br> <br>|22<br>60<br>20|ns<br>ns<br>ns| |||||| |**Qg(on)**|||110|nC| |**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||25|nC| |**Qgd**|||53|nC| |**RthJC**||||0.31 C/W| |**RthCS**|TO-3P||0.25|C/W| ## **Source-Drain Diode** |**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---| |(TJ= 25C|Unless Otherwise Specified)|**Min.**|**Typ. **|**Max.**| |**IS**|VGS= 0V|||52<br>A| |**ISM**|Repetitive, Pulse Width Limited by TJM|||150<br>A| |**VSD**|IF= IS, VGS= 0V, Note 1|||1.5<br>V| |**trr**|<br>IF= 25A, -di/dt = 100A/s||250|ns| |**QRM**|VR= 100V, VGS = 0V||3.0|μC| Note 1. Pulse test, t 300s, duty cycle, d 2%. ## **TO-268 Outline** **==> picture [150 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> 1 - GATE<br>2,4 - DRAIN<br>3 - SOURCE<br>**----- End of picture text -----**<br> **==> picture [159 x 165] intentionally omitted <==** ## **TO-3P Outline** **==> picture [130 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 1 - G AT E<br>2, 4 - D R AIN<br>3 - SOU RCE<br>**----- End of picture text -----**<br> **==> picture [148 x 136] intentionally omitted <==** IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTT52N30P IXTQ52N30P** **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>VGS = 10V<br>50<br> 8V<br>7V<br>40<br>30<br>6V<br>20<br>10<br>5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ TJ = 25ºC** **==> picture [254 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 140 VGS = 10V<br> 9V<br>120<br>100 8V<br>80<br>7V<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [538 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 26A Value vs.<br> Junction Temperature<br>3.0<br>VGS = 10V<br>50 8V VGS = 10V<br> 7V 2.6<br>40 2.2 I D = 52A<br>I D = 26A<br>6V 1.8<br>30<br>1.4<br>20<br>1.0<br>10 5V<br>0.6<br>0 0.2<br>0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>4.0<br>V GS = 10V 50<br>3.5<br>3.0 TJ = 125ºC 40<br>2.5<br>30<br>2.0<br>20<br>1.5 TJ = 25ºC<br>10<br>1.0<br>0.5 0<br>0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved **IXTT52N30P IXTQ52N30P** **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>100<br>90<br>80<br>70<br>60<br>50<br>TJ = 125ºC<br>40 25ºC<br> - 40ºC<br>30<br>20<br>10<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>60<br>TJ = - 40ºC<br>50<br>25ºC<br>40<br>125ºC<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **==> picture [251 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>140<br>120<br>100<br>80<br>60<br>40 T J = 125ºC TJ = 25ºC<br>20<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [265 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 11. Capacitance<br>10,000<br>Ciss<br>1,000<br>C oss<br>f = 1 MHz Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [253 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 V DS = 150V<br> I D = 26A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [256 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>RDS(on) Limit<br>100<br>25µs<br>100µs<br>10<br>1ms<br>T J = 150ºC 10ms<br>T C = 25ºC DC<br>Single Pulse<br>1<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXTT52N30P IXTQ52N30P** **Fig. 13. Maximum Transient Thermal Impedance** 10 **==> picture [525 x 347] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Fig. 13. Maximum Transient Thermal Impedance<br>0.5 aaaaaa<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>Pulse Width - Second<br> - ºC / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_52N30P(6S) 9-26-13 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →