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IXTQ50N20P
Power MOSFET, N Channel, 200 V, 50 A, 0.06 ohm, TO-3P, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: PolarHT
- Qualification: -
- Power Dissipation: 360W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-3P
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 50A
- Drain Source On State Resistance: 0.06ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.97 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHT[TM] IXTA50N20P Power MOSFET IXTP50N20P IXTQ50N20P** **V = 200V DSS I = 50A D25 R ≤ 60m Ω DS(on)** ## N-Channel Enhancement Mode **==> picture [516 x 356] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||| |---|---|---|---|---|---|---|---|---|---|---| |Avalanche Rated| |TO-263 (IXTA)| |Symbol|Test Conditions|Maximum Ratings| |VDSS|TJ|= 25°C to 175°C|200|V|G| |V|ee|DGR|TJ|= 25°C to 175°C, RGS = 1MΩ|200|V|>.|S| |(TAB)| |VGSS|Continuous|±20|V| |VGSM|Transient|±30|V|TO-220 (IXTP)| |ID25|TC|= 25°C|50|A| |IDM|TC|= 25°C, pulse width limited by TJM|120|A| |IA|TC|= 25°C|50|A| |E|cas|AS|TC|= 25°C|1|J|G|D|S|(TAB)| |dV/dt|IS|≤ IDM, VDD|≤ VDSS, TJ|≤ 175°C|10|V/ns| |PD|TC|= 25°C|360|W|TO-3P (IXTQ)| |TJ|- 55 ... +175|°C| |TJM|175|°C| |Tstg|- 55 ... +175|°C| |TL|1.6mm (0.062 in.) from case for 10s|300|°C| |TSOLD|Plastic body for 10s|260|°C| |le|G| |Md|Mounting torque|(TO-3P,TO-220)|1.13/10 Nm/lb.in.|D|S|(TAB)| |Weight|TO-263|2.5|g| |TO-220|3.0|g| |TO-3P|5.5 g| |G = Gate|D = Drain| |S = Source|TAB = Drain| **----- End of picture text -----**<br> ## **Features** **==> picture [352 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |Symbol|Test Conditions Characteristic Values| |(TJ = 25°C, unless otherwise specified)|Min. Typ. Max.| |BVDSS|VGS|= 0V, ID = 250μA|200|7|V| |VGS(th)|VDS|= VGS, ID = 250μA|2.5 5.0 V| |IGSS|VGS|= ±20V, VDS = 0V|±|—|100|nA| |IDSS|VDS|= VDSS|25|μA| |VGS|= 0V TJ = 150°C|250|-|μA| |RDS(on)|VGS|= 10V, ID = 0.5 • ID25, Note 1|60|mΩ| **----- End of picture text -----**<br> - International standard packages - Unclamped Inductive Switching (UIS) rated - Low package inductance - easy to drive and to protect ## **Advantages** - Easy to mount - Space savings - High power density DS99156F(07/08) © 2008 IXYS CORPORATION, All rights reserved ## **IXTA50N20P IXTP50N20P IXTQ50N20P** |**Symbol**<br>(TJ= 25°C, unless otherwise specified)|**Test Conditions Characteristic Values**<br>C, unless otherwise specified)<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**| |---|---|---|---|---|---| |**gfs**|VDS= 10V, ID= 0.5 • ID25, Note 1 12 23|, Note 1 12 23|, Note 1 12 23||S| ||||||| |**Ciss**|2720|2720|2720||pF| |**Coss**|VGS= 0V, VDS= 25V, f = 1MHz|490|490||pF| ||||||| |**Crss**||105|105||pF| |**td(on)**|**Resistive Switching Times**||26||ns| |**tr**<br>**td(off)**<br>**tf**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10Ω(External)|35<br>70<br>30|35<br>70<br>30||ns<br>ns<br>ns| |**Qg(on)**||70|70||nC| |**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|17|17||nC| |**Qgd**||37|37||nC| |**RthJC**||0.42|0.42|0.42°|°C/W| |**RthCS**|(TO-3P)|0.21|0.21||°C/W| ||(TO-220)|0.25|0.25|°|°C/W| ## **TO-3P (IXTQ) Outline** ## **Source-Drain Diode** |**Symbol**||**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**| |---|---|---|---|---|---|---| |(TJ= 25°C, unless otherwise specified)|||**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|| |**IS**||VGS= 0V||50 A|50 A|50 A| |**ISM**||Repetitive, pulse width limited by TJM||120 A|120 A|120 A| |**VSD**||IF= 50A, VGS= 0V, Note 1||1.5 V|1.5 V|1.5 V| |**trr**<br>**QRM**|}|IF= 25A, -di/dt = 100A/μs<br>VR= 100V, VGS= 0V|150<br>2.0|150<br>2.0||ns<br>μC| ## **TO-220 (IXTP) Outline** Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ## **TO-263 (IXTA) Outline** **==> picture [99 x 42] intentionally omitted <==** **----- Start of picture text -----**<br> ——<br>Pins: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br> **==> picture [522 x 38] intentionally omitted <==** **----- Start of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. | Q_ | t 00 | e s | 254 | 3 1 8<br>IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2<br>by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2<br>4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537<br>**----- End of picture text -----**<br> **IXTA50N20P IXTP50N20P IXTQ50N20P** **==> picture [257 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>50<br>45 V GS = 10V<br>40<br>9V<br>35<br>30<br>8V<br>25<br>20<br>7V<br>15<br>10<br>5 6V<br>0<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 150ºC** **==> picture [240 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45 V GS = 10V<br> 9V<br>40<br>35<br>8V<br>30<br>25<br>20<br>7V<br>15<br>6V<br>10<br>5 5V<br>0<br>0 1 2 3 4 5 6 7 8<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current** **==> picture [245 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 4.2<br>3.8 V GS = 10V<br>3.4<br>TJ = 175ºC<br>3<br>2.6<br>2.2<br>TJ = 125ºC<br>1.8<br>1.4<br>1 TJ = 25ºC<br>0.6<br>0 10 20 30 40 50 60 70 80 90 100<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **==> picture [255 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics<br>@ 25ºC<br>100<br>90 V GS = 10V<br>80<br>9V<br>70<br>60<br>50<br>8V<br>40<br>30<br>20 7V<br>10<br>6V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature** **==> picture [245 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>3.0<br>2.8 V GS = 10V<br>2.6<br>2.4<br>2.2<br>2.0 ID = 50A<br>1.8<br>ID = 25A<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Drain Current vs. Case Temperature** **==> picture [244 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 55<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved **IXTA50N20P IXTP50N20P IXTQ50N20P** **Fig. 7. Input Admittance** **==> picture [242 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>60<br>50<br>40<br>30 TJ = 150ºC<br> 25ºC<br>20 - 40ºC<br>10<br>0<br>4 5 6 7 8 9 10<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [244 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>125<br>100<br>75<br>50<br>TJ = 150ºC<br>25 T J = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [243 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Ciss<br>1000<br>C oss<br>100<br>Crss<br>f = 1MHz<br>10<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [244 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 36<br>32 TJ = - 40ºC<br>28<br>24<br>25ºC<br>20<br>150ºC<br>16<br>12<br>8<br>4<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110 120<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [239 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 100V<br>8 ID = 25A<br>7 I G = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [246 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TJ = 175ºC<br>R DS(ON) Limit T C = 25ºC<br>Single Pulse<br>100<br>25µs<br>100µs<br>10 1ms<br>DC 10ms<br>1<br>10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXTA50N20P IXTP50N20P IXTQ50N20P** ## **Fig. 13. Maximum Transient Thermal Impedance** **==> picture [524 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>0.1 1 10 100 1000<br>Pulse Width - milliseconds<br>C / W<br>º<br> -<br>( t h ) J C<br>Z<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_50N20P(5S)7-31-08-F **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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