IXTQ460P2

Power MOSFET, N Channel, 500 V, 24 A, 0.27 ohm, TO-3P, Through Hole

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
SVHC: No SVHC (12-Jan-2017)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: PolarP2
Qualification: -
Power Dissipation: 480W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-3P
Drain Source Voltage Vds: 500V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 24A
Drain Source On State Resistance: 0.27ohm
Gate Source Threshold Voltage Max: 4.5V

Delivery and price
Units per pack	100
Price	3.17 €
Current stock	200+
Lead time	30 days

Datasheet

## **PolarP2[TM] Power MOSFET** 

## **IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

||**TO-263 AA (IXTA)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|||||
|---|---|---|---|---|---|---|---|---|
||G<br>D S<br>D (Tab)<br>G<br>S<br>D (Tab)<br>~~nll~~||||||||
|**Symbol**|**Test Conditions**||**Maximum Ratings**||||||
|**VDSS**|TJ = 25°C to 150°C|||500||||V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|||500||||V|
|**VGSS**|Continuous|||±30||||V|
|**VGSM**|Transient|||±40||||V|
|**ID25**|TC = 25°C|||24||||A|
|**IDM**<br>**IA**|TC = 25°C, Pulse Width Limited by TJM<br>TC = 25°C|||50<br>12||||A<br>A|
|**EAS**|TC = 25°C|||750||||mJ|
|**dv/dt**|IS<br>≤IDM,  VDD ≤VDSS, TJ ≤150°C|||15|||V/ns||
|**PD**T|TC = 25°C|||480||||W|
|**TJ**||-55 ... +150||||||°C|
|**TJM**||||150||||°C|
|**Tstg**||-55 ... +150||||||°C|
|**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering<br>Plastic Body for 10s|||300<br>260||||°C<br>°C|
|**FC**<br>**Md**|Mounting Force TO-263<br>10..65 / 2.2..14.6<br>Mounting Torque (TO-220, TO-3P & TO-247)<br>1.13 / 10         Nm/lb.in.||||1.13 / 10         Nm/lb.in.|Nm/lb.in.<br>1.13 / 10         Nm/lb.in.|||
|**Weight**|TO-263|||2.5||||g|
||TO-220|3.0                     g|3.0                     g|3.0                     g|3.0                     g|3.0                     g|3.0                     g|3.0                     g|
|TO-3P|TO-3P<br>TO-247|5.5                 g<br>6.0                 g|5.5                 g<br>6.0                 g|5.5                 g<br>6.0                 g|5.5                 g<br>6.0                 g|5.5                 g<br>6.0                 g|5.5                 g<br>6.0                 g|5.5                 g<br>6.0                 g|
|**Symbol**|**Test Conditions                                            Characteristic Values**|**Test Conditions                                            Characteristic Values**|||||||
|(TJ= 25°C, Unless Otherwise Specified)|C, Unless Otherwise Specified)|**Min.        Typ.       Max.**||**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|||
|**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**<br>**RDS(on)**|VGS = 0V, ID= 250μA<br>500<br>VDS = VGS, ID= 250μA<br>2.5<br>VGS =±30V, VDS= 0V<br>VDS =  VDSS, VGS=  0V<br>TJ= 125°C<br>250   μA<br>VGS = 10V, ID= 0.5 • ID25,  Note 1||250   μA|4.5     V<br>±<br>25<br>250   μA<br>270<br>~~||~~<br>~~| |~~<br>~~|__|~~<br>~~|~~||4.5     V<br>±100 <br>25<br>250   μA<br>270||V<br>4.5     V<br> nA<br>μA<br>250   μA<br> mΩ|



**V =   500V DSS I =   24A D25 R ≤ 270m Ω DS(on) t =   400ns rr(typ)** 

## **TO-3P (IXTQ)** 

**==> picture [85 x 35] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>D<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


## **TO-247 (IXTH)** 

**==> picture [80 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance 

## **Advantages** 

High Power Density Easy to Mount Space Savings 

## **Applications** 

Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters ° Laser Drivers AC and DC Motor Drives : Robotics and Servo Controls 

DS100216B(06/10) 

© 2010 IXYS CORPORATION, All Rights Reserved 

**IXTA460P2  IXTP460P2 IXTQ460P2  IXTH460P2** 

|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1                   14|24|S|
|**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2890<br>280<br>22|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10Ω(External)|15<br>9<br>30<br>5|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|48<br>13<br>16|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220<br> <br>**RthCS**<br>TO-3P & TO-247<br>|<br>0.50<br>0.25|0.26 °C/W<br>°C/W<br>°C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br> °|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br> °|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br> °|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**IS**<br>VGS= 0V||24<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||96<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.3<br>V|
|**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 12A, -di/dt  = 100A/μs<br>VR= 100V, VGS = 0V|400<br>19.6<br>3.9|ns<br>A<br>μC|



Note   1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTA460P2  IXTP460P2 IXTQ460P2  IXTH460P2** 

## **TO-263 (IXTA) Outline** 

**==> picture [75 x 43] intentionally omitted <==**

**----- Start of picture text -----**<br>
1. Gate<br>2. Colle ctor<br>3. E mitter<br>4. Collector<br>Bottom<br>Side<br>**----- End of picture text -----**<br>


|Dim.|Millimeter|Millimeter|Inches|Inches|
|---|---|---|---|---|
||Min.|Max.|Min.|Max.|
|A|4.06|4.83|.160|.190|
|b|0.51|0.99|.020|.039|
|b2|1.14|1.40|.045|.055|
|c|0.40|0.74|.016|.029|
|c2|1.14|1.40|.045|.055|
|D|8.64|9.65|.340|.380|
|D1|8.00|8.89|.280|.320|
|E|9.65|10.41|.380|.405|
|E1|6.22|8.13|.270|.320|
|e|2.54|BSC|.100|BSC|
|L|14.61|15.88|.575|.625|
|L1|2.29|2.79|.090|.110|
|L2|1.02|1.40|.040|.055|
|L3|1.27|1.78|.050|.070|
|L4|0|0.13|0|.005|



## **TO-220 (IXTP) Outline** 

**==> picture [99 x 15] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


**TO-3P (IXTQ) Outline** 

**==> picture [148 x 290] intentionally omitted <==**

**==> picture [99 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247 (IXTH) Outline<br>**----- End of picture text -----**<br>


|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||
|||||||||||||||||
|||||||||||||||||
|||||||||||||||||
|||||||||||||||||
|||||||||||||||||
||||||||**1**|||**2       3**|∅P|||||
|||||||||||||||||
|||||||||||||||||
|||||||||||||||||
|||||||||||||||||
|||||||||||~~e~~||||||
|Terminals:||||||||1 - Gate|||2 - Drain|||||
|||||||||3 - Source||||||||
||Dim.||||Millimeter<br>Min.<br>Max.||||||Inches<br>Min.<br>Max.|||||
|||A||||4.7||||5.3|.185||.209|||
|||A1||||2.2||||2.54|.087||.102|||
|||A2||||2.2||||2.6|.059||.098|||
|||b||||1.0||||1.4|.040||.055|||
|||b1|||1.65|||||2.13|.065||.084|||
|||b~~2~~|||2.87|||||3.12|.113||.123|||
|||C||||||.4||.8|.016||.031|||
|||D|||20.80|||||21.46|.819||.845|||
|||E|||15.75|||||16.26|.610||.640|||
|||e|||5.20|||||5.72|0.205 0.225|||||
|||L|||19.81|||||20.32|.780||.800|||
|||L1||||||||4.50|||.177|||
|||∅P|||3.55|||||3.65|.140||.144|||
|||Q|||5.89|||||6.40|0.232 0.252|||||
|||R|||4.32|||||5.49|.170||.216|||
|||S|||6.15|||||BSC|242 BSC|||||



© 2010 IXYS CORPORATION, All Rights Reserved 

**IXTA460P2  IXTP460P2 IXTQ460P2  IXTH460P2** 

**==> picture [263 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>25<br>V GS = 10V<br>         7V<br>20<br>15<br>6V<br>10<br>5<br>5V<br>0<br>0 1 2 3 4 5 6 7 8<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [263 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>55<br>50 VGS = 10V<br>           7V<br>45<br>40<br>35<br>30<br>25<br>6V<br>20<br>15<br>10<br>5 5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [535 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 12A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>25 3.4<br>V          7V   GS = 10V 3.0 VGS = 10V<br>20<br>2.6<br>6V<br>2.2 I D = 24A<br>15<br>1.8 I D = 12A<br>10<br>1.4<br>5V<br>1.0<br>5<br>0.6<br>4V<br>0 0.2<br>0 5 10 15 20 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>3.8 28<br>VGS = 10V<br>3.4 24<br>3.0 TJ = 125 º C<br>20<br>2.6<br>16<br>2.2<br>12<br>1.8<br>8<br>1.4<br>TJ = 25ºC<br>1.0 4<br>0.6 0<br>0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTA460P2  IXTP460P2 IXTQ460P2  IXTH460P2** 

**==> picture [533 x 640] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>35 50<br>30 T J = - 40ºC<br>40<br>25<br>T J = 125ºC 25ºC<br>          25ºC 30<br>20<br>        - 40ºC<br>125ºC<br>15<br>20<br>10<br>10<br>5<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 5 10 15 20 25 30 35<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>80 10<br>70  VDS = 250V<br> I D = 12A<br>8<br>60  I G = 10mA<br>50<br>6<br>40<br>4<br>30<br>TJ = 125 º C<br>20<br>TJ  = 25ºC 2<br>10<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 20 25 30 35 40 45 50<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>10,000 100<br>RDS(on) Limit<br>25µs<br>C iss 10<br>1,000 100µs<br>1<br>Coss<br>100<br>1ms<br>0.1  TJ = 150ºC<br> TC = 25ºC<br>f = 1 MHz   Single Pulse<br>Crss 10ms<br>10 0.01<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes  - Siemens<br>ID gf s<br> - Volts<br> - AmperesIS VGS<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

## **IXTA460P2  IXTP460P2 IXTQ460P2  IXTH460P2** 

**==> picture [536 x 261] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: T_460P2(57)6-03-10-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Updated at April 29, 2026

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

Learn more →

Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

Request a quote →

Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

BOM Analysis service →