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IXTQ22N50P
Power MOSFET, N Channel, 500 V, 22 A, 0.27 ohm, TO-3P, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar
- Qualification: -
- Power Dissipation: 350W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-3P
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 22A
- Drain Source On State Resistance: 0.27ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.39 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM]** **IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P** ## **Power MOSFETs** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode **==> picture [295 x 73] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220 (IXTV) PLUS220SMD (IXTV_S)<br>G<br>DS G<br>S<br>D (TAB) D (TAB)<br>**----- End of picture text -----**<br> |**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|| |---|---|---|---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|||500||V| |**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|||500||V| |**VGSS**|Continuous|||±30||V| |**VGSM**|Transient|||±40||V| |**ID25**|TC = 25°C|||22||A| |**IDM**|TC = 25°C, Pulse Width Limited by TJM|||50||A| |**IA**|TC = 25°C|||22||A| |**EAS**|TC = 25°C|||750||mJ| |**dV/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|||10||V/ns| |**PD**|TC = 25°C|||350||W| |**TJ**|||-55 ... +150|||°C| |**TJM**||||150||°C| |**Tstg**|||-55 ... +150|||°C| |**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering<br>Plastic Body for 10s|||300<br>260||°C<br>°C| |**Md**|Mounting Torque (TO-247 & TO-3P)|Mounting Torque (TO-247 & TO-3P) 1.13/10|1.13/10||Nm/lb.in.|| |**FC**<br>**Weight**|Mounting Force (PLUS220) <br>PLUS220 types|11..65/2.5..14.6|11..65/2.5..14.6<br>4.0|||N/lb.<br>g| |TO-3P|TO-3P<br>TO-247|6.0 g|6.0 g|5.5<br>6.0 g|6.0 g|g<br>6.0 g| |**Symbol**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**BVDSS**|**Test Conditions Characteristic Values**<br>C, Unless Otherwise Specified)<br>VGS = 0V, ID= 250μA|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**<br>500|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**<br>500<br>V<br>~~|~~|||| |**VGS(th)**|VDS = VGS, ID= 250μA|3.0|3.0|5.5<br>~~|~~|5.5|V| |**IGSS**<br>**IDSS**|VGS =±30V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T|TJ= 125°C|50 μA|±<br>5<br>50 μA<br>~~~~~|±100<br>5<br>50 μA|nA<br>μA<br>50 μA| |**RDS(on)**|VGS = 10V, ID= 0.5 • ID25, Note 1|||270|270|mΩ| **V = 500V DSS I = 22A D25 R ≤ 270m Ω DS(on) t = 400ns rr(typ)** ## **TO-3P (IXTQ)** **==> picture [87 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D<br>S<br>D (TAB)<br>D (TAB)<br>**----- End of picture text -----**<br> **==> picture [61 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 (IXTH)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source TAB = Drain ## **Features** International Standard Packages Avalanche Rated Fast Intrinsic Diode Low Package Inductance ## **Advantages** High Power Density Easy to Mount Space Savings ## **Applications** Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99351G(07/09) © 2009 IXYS CORPORATION, All Rights Reserved **IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>| |---|---|---| |(TJ= 25°C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**| |**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1 12|20|S| |**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2880<br>310<br>29|pF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10Ω(External)|22<br>25<br>72<br>21|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|50<br>16<br>18|nC<br>nC<br>nC| |**RthJC**<br>**RthCS**<br>(TO-247, PLUS220 & TO-3P)<br>|<br>0.25|0.35 °C/W<br>°C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>| |---|---|---| |(TJ= 25°C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**| |**IS**<br>VGS= 0V||22<br>A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||88<br>A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.5<br>V| |**trr**<br> <br>IF= 22A, -di/dt = 100A/μs<br>VR= 100V, VGS = 0V|400|ns| Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P** **==> picture [534 x 334] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220 (IXTV) Outline PLUS220SMD (IXTV_S) Outline<br>E1E L2 A1A E 1 E1E L2 A1A E1<br>A<br>A1<br>D1 A2<br>D D A3<br>A3 b<br>L3 L3 c<br>L1 D<br>L L4 D1<br>L L1 E<br>2X b<br>e c E1<br>A2 e<br>2X e 3X b cA2 LL1<br>L2<br>Terminals: 1 - Gate 2 - Drain L3<br>3 - Source TAB - Drain Terminals: 1 - Gate 2 - Drain L4<br>3 - Source TAB - Drain<br>A<br>A1<br>A2<br>b TO-3P (IXTQ) Outline<br>c<br>D<br>D1<br>E<br>E1<br>e<br>L<br>L1<br>L2<br>L3<br>**----- End of picture text -----**<br> **==> picture [107 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> Pins: 1 - Gate 2 - Drain<br>3 - Source 4, TAB - Drain<br>**----- End of picture text -----**<br> **==> picture [99 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 (IXTH) Outline<br>**----- End of picture text -----**<br> |||Dim.<br>Mil<br>Min.<br>A<br>4.7<br>A1<br>2.2<br>|limeter<br>Inche<br>Max.<br>Min.<br>| |---|---|---|---| ||||5.3<br>.185<br>.<br>2.54<br>.087<br>.| |**1 2**<br>Terminals: 1 - Gate|**3**<br>2 - Drain<br>∅P|A2<br>2.2<br>b<br>1.0<br>b1<br>1.65<br>b2<br>2.87<br>C<br>.4<br>D<br>20.80<br>E<br>15.75<br>e<br>5.20<br>L<br>19.81<br>L1<br>∅P<br>3.55<br>Q<br>5.89<br>R<br>4.32|2.6<br>.059<br>.<br>1.4<br>.040<br>.<br>2.13<br>.065<br>.<br>3.12<br>.113<br>.| ||||.8<br>.016<br>.<br>21.46<br>.819<br>.<br>16.26<br>.610<br>.| ||||5.72<br>0.205 0.<br>20.32<br>.780<br>.<br>4.50<br>.| ||||3.65<br>.140<br>.<br>6.40<br>0.232 0.<br>5.49<br>.170<br>.| © 2009 IXYS CORPORATION, All Rights Reserved **IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P** **==> picture [263 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>22<br>VGS = 10V<br>20<br> 8V<br>18 7V<br>16<br>14<br>12<br>10 6V<br>8<br>6<br>4<br>5V<br>2<br>0<br>0 1 2 3 4 5 6 7<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [263 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics<br>@ 25ºC<br>55<br>50 VGS = 10V<br> 8V<br>45<br>40<br>7V<br>35<br>30<br>25<br>6V<br>20<br>15<br>10<br>5 5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **==> picture [264 x 393] intentionally omitted <==** **----- Start of picture text -----**<br> 22<br>20 VGS = 10V<br> 7V<br>18<br>16<br>6V<br>14<br>12<br>10<br>8<br>6<br>5V<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 11A Value<br> vs. Drain Current<br>3.4<br>VGS = 10V<br>3.0<br>TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4 T J = 25ºC<br>1.0<br>0.6<br>0 5 10 15 20 25 30 35 40 45 50 55<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature** **==> picture [255 x 389] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>V GS = 10V<br>2.8<br>2.4<br>I D = 22A<br>2.0<br>I D = 11A<br>1.6<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P** **==> picture [262 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>40<br>35<br>30<br>25 T J = 125ºC<br> 25ºC<br> - 40ºC<br>20<br>15<br>10<br>5<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **==> picture [251 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>40<br>30 TJ = 125 º C<br>20<br>TJ = 25ºC<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [256 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>f = 1 MHz<br>Ciss<br>1,000<br>C oss<br>100<br>Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [261 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>40<br>TJ = - 40ºC<br>35<br>30<br>25ºC<br>25<br>125ºC<br>20<br>15<br>10<br>5<br>0<br>0 4 8 12 16 20 24 28 32 36<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 250V<br> I D = 11A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [254 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 100.0<br>RDS(on) Limit<br>25µs<br>100µs<br>10.0<br>1.0<br>1ms<br>T J = 150ºC<br>TC = 25ºC<br>Single Pulse 10ms<br>DC 100ms<br>0.1<br>10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2009 IXYS CORPORATION, All Rights Reserved ## **IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P** ## **Fig. 13. Maximum Transient Thermal Impedance** **==> picture [524 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_22N50P(63)07-22-09-B **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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