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IXTQ120N20P
Power MOSFET, N Channel, 200 V, 120 A, 0.022 ohm, TO-3P, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: PolarHT
- Qualification: -
- Power Dissipation: 714W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-3P
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 0.022ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.71 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHT[TM] Power MOSFET** **IXTK 120N20P V = 200 V DSS IXTQ 120N20P I = 120 A D25 R ≤ 22 m Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated ## **TO-264 (IXTK)** |**Symbol**|**Test Conditions**|**Maximum Ratings**||| |---|---|---|---|---| |**VDSS**|TJ = 25°C to 175°C|200<br>V||| |**VDGR**|TJ = 25°C to 175°C; RGS= 1 MΩ<br>200<br>V|||| |**VGS**<br>**VGSM**|Continuous<br>Transient|±20<br>V<br>±30<br>V|G D S<br>(TAB)|| |**ID25**<br>TC = 25°C<br>120<br>A<br>**ID(RMS)**<br>External lead current limit<br>75<br>A<br>**IDM**<br>TC = 25°C, pulse width limited by TJM<br>300<br>A<br>**IAR**<br>TC = 25°C<br>60<br>A<br>**EAR**<br>TC = 25°C<br>60<br>mJ<br>G<br>**TO-3P (IXTQ)**<br>~~a~~||||| |**EAS**|TC = 25°C|2.0<br>J|D S<br>(TAB)|| |**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, V<br>TJ ≤175°C, RG= 4Ω|s, VDD ≤VDSS,<br>10<br>V/ns|G = Gate<br>D = Drain<br>S = Source<br>TAB = Drain|| |**PD**|TC = 25°C|714<br>W||| |**TJ**||-55 ... +175<br>°C||| |**TJM**||175<br>°C|**Features**|| |**Tstg**||-55 ... +175<br>°C||| |**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>300<br>°C<br>Plastic body for 10 s<br>260<br>°C||l International standard packages<br>l Unclamped Inductive Switching (UIS)<br>rated|| |**Md**|Mounting torque|1.13/10 Nm/lb.in.|l Low package inductance|| |**Weight**|TO-3P|5.5<br>g|- easy to drive and to protect|| ||TO-264|10<br>g||| |**Symbol**|**Test Conditions**|**Characteristic Values**|**Advantages**|| |(TJ= 25°C, unless otherwise specified)||**Min. Typ.**<br>**Max.**||| |**BVDSS**<br>**VGS(th)**|VGS = 0 V, ID= 250µA<br>VDS = VGS, ID= 250µA|200<br>V<br>2.5<br>5.0<br>V<br>~~7~~<br>~~_~~|l<br>Easy to mount<br>l<br>Space savings<br>l<br>High power density<br>~~7~~<br>~~_~~|~~7~~<br>~~_~~| |**IGSS**|VGS =±20 VDC, VDS= 0|±100<br>nA<br>~~=~~|~~=~~|~~=~~| |**IDSS**|VDS = VDSS<br>VGS= 0 V|25<br>µA<br>TJ= 175°C<br>500<br>µA<br>~~=~~|~~=~~|~~=~~| |**RDS(on)**|VGS = 10 V, ID= 0.5 ID25|22<br>mΩ||| ||Pulse test, t≤300µs, duty cycle d|s, duty cycle d≤2 %||| > l International standard packages > l Unclamped Inductive Switching (UIS) rated > l Low package inductance - easy to drive and to protect DS99207E(10/05) © 2006 IXYS All rights reserved **IXTK 120N20P IXTQ 120N20P** ## **TO-264 (IXTK) Outline** |J<br>**Min.**|**Typ.**| |---|---| |**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>40|63| |**Ciss**<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**<br>||6000<br>1300<br>265<br>~~Tag~~| |**td(on)**<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= ID25<br>**td(off)**<br>RG= 3.3Ω(External)<br>**tf**|30<br>35<br>100<br>31<br>~~Tag~~| |**Qg(on)**<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>**Qgd**|152<br>40<br>75| |**RthJC**<br>**RthCS**<br>TO-3P<br>**RthCS**<br>TO-264|0.21<br>0.15| |Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| |---|---|---| |A<br>A1<br>A2<br>b<br>b1<br>b2|4.82<br>5.13<br>2.54<br>2.89<br>2.00<br>2.10<br>1.12<br>1.42<br>2.39<br>2.69<br>2.90<br>3.09|.190<br>.202<br>.100<br>.114<br>.079<br>.083<br>.044<br>.056<br>.094<br>.106<br>.114<br>.122| |c<br>D|0.53<br>0.83<br>25.91<br>26.16|.021<br>.033<br>1.020<br>1.030| |E<br>e|19.81<br>19.96<br>5.46 BSC|.780<br>.786<br>.215 BSC| |J<br>K|0.00<br>0.25<br>0.00<br>0.25|.000<br>.010<br>.000<br>.010| |L<br>L1|20.32<br>20.83<br>2.29<br>2.59|.800<br>.820<br>.090<br>.102| |P<br>Q<br>Q1<br>R<br>R1|3.17<br>3.66<br>6.07<br>6.27<br>8.38<br>8.69<br>3.81<br>4.32<br>1.78<br>2.29|.125<br>.144<br>.239<br>.247<br>.330<br>.342<br>.150<br>.170<br>.070<br>.090| |S|6.04<br>6.30|.238<br>.248| |**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)| |---|---|---| |**Symbol**<br>**Test Conditions**<br>**Min.**|**Typ.**|**Max.**| |**IS**<br>VGS= 0 V||120<br>A| |**ISM**<br>Repetitive||300<br>A| |**VSD**<br>IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %||1.5<br>V| |**trr**<br>IF= 25 A, -di/dt = 100 A/µs<br>**QRM**<br>VR= 100 V, VGS= 0 V|180<br>3.0|ns<br>µC| ## **TO-3P (IXTQ) Outline** - IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 **IXTK 120N20P IXTQ 120N20P** **==> picture [242 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>120<br>VGS = 10V<br> 9V<br>100<br> 8V<br>80<br>60<br>7V<br>40<br>6V<br>20<br>5V<br>0<br>0 0.5 1 1.5 2 2.5<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **==> picture [241 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics<br>@ 150ºC<br>120<br>VGS = 10V<br> 9V<br>100<br> 8V<br>80<br>7V<br>60<br>6V<br>40<br>20<br>5V<br>0<br>0 1 2 3 4 5 6<br>VD S - Volts<br>Fig. 5. RDS(on) Normalized to 0.5 ID25<br>Value vs. Drain Current<br>4<br>T J = 175ºC<br>3.5<br>3<br>2.5<br>VGS = 10V<br>VGS = 15V<br>2<br>1.5<br>1 º<br>T J = 25 C<br>0.5<br>0 30 60 90 120 150 180 210 240 270 300<br>I D - Amperes<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **==> picture [240 x 647] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics<br>@ 25ºC<br>270<br>VGS = 10V<br>240<br>9V<br>210<br>180<br>150<br>8V<br>120<br>90 7V<br>60<br>30 6V<br>0<br>0 2 4 6 8 10 12 14 16<br>VD S - Volts<br>Fig. 4. RDS(on) Normalized to 0.5 ID25<br>Value vs. Junction Temperature<br>3 V GS = 10V<br>2.5<br>I D = 120A<br>2<br>I D = 60A<br>1.5<br>1<br>0.5<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Temperature<br>90<br>80 External Lead Current Limit<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXTK 120N20P IXTQ 120N20P** **Fig. 7. Input Admittance** **==> picture [231 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>150<br>120<br>90<br>60 TJ = 150 º C<br> 25ºC<br>30 º<br> -40 C<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8 8.5<br>VG S - Volts<br>Fig. 9. Source Current vs.<br>Source-To-Drain Voltage<br>350<br>300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4 1.6<br>VS D - Volts<br> - Amperes<br>D<br>I<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [237 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>f = 1MHz<br>Ciss<br>10,000<br>C oss<br>1,000<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [231 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>60<br>50<br>40 T 25J = -40ººCC<br>30 150ºC<br>20<br>10<br>0<br>0 30 60 90 120 150 180 210<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [228 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 100V<br>8 ID = 60A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [234 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>T J = 175ºC<br>R Limit T C = 25ºC<br>DS(on)<br>25µs<br>100 100µs<br>1ms<br>10ms<br>DC<br>10<br>10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXTK 120N20P IXTQ 120N20P** **==> picture [502 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e<br>1 . 0 0<br>0 . 1 0<br>0 . 0 1<br>1 1 0 1 0 0 1 0 0 0<br>Pu ls e W id th - millis e c o n d s<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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