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IXTQ100N25P
Power MOSFET, PolarFET, N Channel, 250 V, 100 A, 0.027 ohm, TO-3P, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 600W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-3P
- Drain Source Voltage Vds: 250V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 0.027ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.92 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHT[TM] Power MOSFET** **IXTK 100N25P V = 250 V DSS IXTQ 100N25P I = 100 A D25 IXTT 100N25P R ≤ 27 m Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated |**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**TO-264 (IXTK)**|**TO-264 (IXTK)**||| |---|---|---|---|---|---|---|---|---|---|---| |**VDSS**<br>**VDGR**<br>**VGSS**<br>**VGSM**|TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>Continuous<br>Transient||250<br>250<br>±20<br>±30|||V<br>V<br>V<br>V||G DS<br>D (TAB)<br>&||| |**ID25**|TC = 25°C||100|||A||||| |**ID(RMS)**<br>External lead current limit<br>75<br>A<br>**IDM**<br>TC = 25°C, pulse width limited by TJM<br>250<br>A<br>**IAR**<br>TC = 25°C<br>60<br>A<br>**EAR**<br>TC = 25°C<br>60<br>mJ<br>**EAS**<br>TC = 25°C<br>2.0<br>J<br>G<br>D S<br>(TAB)<br>**TO-3P (IXTQ)**<br>~~Gi~~||||||||||| |**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, V|s, VDD ≤VDSS,|10|||V/ns||||| ||TJ ≤150°C, RG= 4Ω|||||||||| |**PD**|TC = 25°C||600|||W|**TO-268 (IXTT)**|||| |**TJ**<br>**TJM**<br>**Tstg**<br>**TL**|-55 ... +150<br>150<br>-55 ... +150<br>1.6 mm (0.062 in.) from case for 10 s<br>300|||||°C<br>°C<br>°C<br>°C||G<br>S<br>D (TAB)<br>-.||D (TAB)| |**TSOLD**|Plastic body for 10 s||260|||°C||||| |||||||||G = Gate<br>D = Drain||| |**Md**|Mounting torque||1.13/10||Nm/lb.in.|||S = Source<br>TAB = Drain||| |**Weight**|TO-3P||5.5|||g||||| ||TO-264||10|||g|**Features**|||| ||TO-268||5.0|||g||||| ||||||||l|International standard packages||| |**Symbol**<br>**Test Conditions**<br>(TJ= 25°C, unless otherwise specified)||**Characteristic Values**<br>**Min. Typ.**<br>**Max.**|||||l <br>l|Unclamped Inductive Switching (UIS)<br>rated<br> Low package inductance||| |**BVDSS**|VGS = 0 V, ID= 250µA|250||||V||- easy to drive and to protect||| |**VGS(th)**|VDS = VGS, ID= 250µA|2.5|||5.0|V||||| |**IGSS**|VGS =±20 VDC, VDS= 0|||±100||nA|**Advantages**|||| |**IDSS**|VDS = VDSS<br>VGS= 0 V|TJ= 125°C|||25<br>250|µA<br>µA|l<br>l<br>l|Easy to mount<br>Space savings<br>High power density||| |**RDS(on)**|VGS = 10 V, ID= 0.5 ID25||||27|mΩ||||| ||Pulse test, t≤300µs, duty cycle d|s, duty cycle d≤2 %||||||||| DS99118E(12/05) © 2006 IXYS All rights reserved **IXTK 100N25P IXTQ 100N25P IXTT 100N25P** ## **TO-3P (IXTQ) Outline** |**Symbol**||**Test Conditions Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Test Conditions Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Test Conditions Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Test Conditions Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Test Conditions Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Test Conditions Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**| |---|---|---|---|---|---|---|---| |**gfs**||VDS= 10 V; ID= 0.5 ID25, pulse test|40|56|||S| |**Ciss**<br>**Coss**<br>**Crss**|||VGS= 0 V, VDS= 25 V, f = 1 MHz||6300<br>1150<br>240|||pF<br>pF<br>pF| |**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|||VGS= 10 V, VDS= 0.5 VDSS, ID= ID25<br>RG= 3.3Ω(External)||25<br>26<br>100<br>28<br>-|||ns<br>ns<br>ns<br>ns| |**Qg(on)**||||185|||nC| |**Qgs**||VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||43|||nC| |**Qgd**||||91|||nC| |**RthJC**|||||0.21°C/W||C/W| |**RthCS**||TO-3P||0.21||°C/W|C/W| |**RthCS**||TO-264||0.15||°C/W|C/W| |**Source-Drain Diode Characteristic Values**||**Source-Drain Diode Characteristic Values**|**Source-Drain Diode Characteristic Values**||||| |||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)|||| |**Symbol**||**Test Conditions**|**Min.**|**Typ.**|**Max.**||| |**IS**||VGS= 0 V|||100||A| |**ISM**||Repetitive|||250||A| |**VSD**||IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %|||1.5||V| |**trr**||IF= 25 A, -di/dt = 100 A/µs||200|||ns| |**QRM**||VR= 100 V, VGS= 0 V||3.0|||µC| ## **TO-264 (IXTK) Outline** ## **TO-268 (IXTT) Outline** IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 **IXTK 100N25P IXTQ 100N25P IXTT 100N25P** **==> picture [497 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>100 250<br>90 VGS = 10V 225 VGS = 10V<br> 9V<br>9V<br>80 8V 200<br>70 175<br>8V<br>60 150<br>50 125<br>7V<br>40 100<br>7V<br>30 75<br>6V<br>20 50<br>6V<br>10 25<br>5V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 12 14 16 18 20<br>V DS - Volts V DS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature** **==> picture [494 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> 100 2.8<br>90 V 9V GS = 10V 2.6 VGS = 10V<br>80 8V 2.4<br>2.2<br>70<br>7V 2<br>60<br>1.8<br>50<br>1.6 I D = 100A<br>40<br>1.4<br>30 6V I D = 50A<br>1.2<br>20 1<br>10 5V 0.8<br>0 0.6<br>0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150<br>V DS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case<br>0.5 ID25 Value vs. ID Tem perature<br>3.4 90<br>3.1 V GS = 10V 80 External Lead Current Limit<br>2.8 70<br>2.5 T J = 125ºC 60<br>2.2 50<br>1.9 40<br>1.6 30<br>1.3 20<br>TJ = 25ºC<br>1 10<br>0.7 0<br>0 25 50 75 100 125 150 175 200 225 250 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXTK 100N25P IXTQ 100N25P IXTT 100N25P** **Fig. 7. Input Adm ittance** **==> picture [228 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>125<br>100<br>75<br>50<br> T J = 125ºC<br> 25ºC<br>25 -40 º C<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8<br>V GS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [226 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100<br>TJ = 125ºC<br>50 T J = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4<br>V SD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [232 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>C iss<br>1000<br>C oss<br>f = 1MHz<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>V DS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [231 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70 T J = -40ºC<br> 25ºC<br>60 125ºC<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175 200<br>ID - Amperes<br> - Siemens<br>fs<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [228 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 V DS = 125V<br>I D = 50A<br>8<br>I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forw ard-Bias Safe Operating Area** **==> picture [234 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>R Limit TJ = 150ºC<br>DS(on) T C = 25ºC<br>100 100µs 25µs<br>1ms<br>10ms<br>10 DC<br>1<br>10 100 1000<br>V DS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXTK 100N25P IXTQ 100N25P IXTT 100N25P** **Fig. 13. Maxim um Transient Therm al Resistance** **==> picture [495 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>1 10 100 1000<br>Pulse Width - milliseconds<br>ºC/W<br> -<br>(th)JC<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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