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IXTP96P085T
Power MOSFET, P Channel, 85 V, 96 A, 0.013 ohm, TO-220AB, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: TrenchP
- Qualification: -
- Power Dissipation: 298W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 85V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 96A
- Drain Source On State Resistance: 0.013ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 2.92 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **TrenchP[TM] Power MOSFETs** ## **IXTA96P085T IXTP96P085T IXTH96P085T** **V = - 85V DSS I = - 96A D25 R ≤ 13m Ω DS(on)** P-Channel Enhancement Mode Avalanche Rated **TO-263 AA (IXTA)** G S D (Tab) **TO-220AB (IXTP)** G D S D (Tab) **TO-247 (IXTH)** G D S D (Tab) |||||**TO-220AB (IXTP)**|**TO-220AB (IXTP)**||| |---|---|---|---|---|---|---|---| |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>- 85<br>V<br>**VDGR**<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>- 85<br>V<br>**VGSS**<br>Continuous<br>±15<br>V<br>**VGSM**<br>Transient<br>±25<br>V<br>**TO-247 (IXTH)**<br>G<br>D S<br>D (Tab)<br>~~2~~|||||||| |**ID25**|TC = 25°C|- 96|A||||| |**IDM**|TC = 25°C, Pulse Width Limited by TJM|- 300|A||||| |**IA**|TC = 25°C|- 48|A||||| |**EAS**<br>**PD**|TC = 25°C<br>TC = 25°C|1<br>298|J<br>W|G<br>S<br>D||D (Tab)|| |**TJ**||-55 ... +150|°C|G = Gate|D = Drain|D = Drain|D = Drain| |**TJM**||150|°C|S = Source|Tab = Drain||Tab = Drain| |**Tstg**||-55 ... +150|°C||||| |**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C||||| |**TSOLD**|Plastic Body for 10s|260|°C|**Features**|||| |**Md**<br>**Weight**<br>TO-247|Mounting Torque (TO-220 & TO-247)<br>TO-263<br>TO-220<br>TO-247|1.13/10 Nm/lb.in.<br>2.5<br>g<br>3.0<br>g<br>6.0<br>g||International Standard Packages<br> Avalanche Rated<br>Extended FBSOA<br>Fast Intrinsic Diode|||International Standard Packages| International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low RDS(ON) and QG ## **Advantages** |(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= - 250μA<br>- 85|~~oe~~|V| |**VGS(th)**<br>VDS = VGS, ID= - 250μA<br>- 2.0 - 4.0 V|- 2.0 - 4.0 V<br>~~oe~~<br>~~=~~|- 2.0 - 4.0 V| |**IGSS**<br>VGS =±15V, VDS= 0V<br>±|±<br>~~=~~|±100<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>- 10<br>TJ= 125°C<br>- 750|- 10<br>- 750<br>~~=~~<br>~~7~~|- 10<br>μA<br>- 750μA| |**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>13|13<br>~~cr~~|13 mΩ| Easy to Mount Space Savings High Power Density ## **Applications** | High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100025B(01/13) © 2013 IXYS CORPORATION, All Rights Reserved ## **IXTA96P085T IXTP96P085T IXTH96P085T** **==> picture [161 x 336] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 Outline<br>Pins: 1 - Gat e<br> 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> |**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**| |**gf**<br>VDS= -10V, ID= 0.5 • ID25, Note 1 40|66|S| |**s**<br><br>**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br> <br>**Crss**<br>|13.1<br>1175<br>460|nF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω(External)|23<br>34<br>45<br>22|ns<br>ns<br>ns<br>ns| |||| |**Qg(on)**<br> <br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|180<br>52<br>62|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>TO-220<br> <br>TO-247<br>|<br>0.50<br>0.21|0.42°C/W<br>°C/W<br>°C/W| |**Source-Drain Diode**<br>**Smbol**<br>**Test Conditions Characteristic Values**|**Source-Drain Diode**<br>**Smbol**<br>**Test Conditions Characteristic Values**|**Source-Drain Diode**<br>**Smbol**<br>**Test Conditions Characteristic Values**| |---|---|---| |**y**<br> <br>(TJ= 25°C, Unless Otherwise Specified)**Min. Typ. Max.**<br>**I**<br>V= 0V<br>- 96 A||| |**S**<br>GS <br>**ISM**<br>Repetitive, Pulse Width Limited by TJM|<br>|<br>- 394 A| |**VSD**<br>IF= - 48A, VGS= 0V, Note 1||-1.3 V| |**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= - 48A, -di/dt = -100A/μs<br>VR= - 43V, VGS= 0V|55<br>100<br>- 3.6|ns<br>nC<br>A| **==> picture [543 x 346] intentionally omitted <==** **----- Start of picture text -----**<br> SD F GS<br>TO-220 Outline<br>tQIRM rrRM IVF = - 48A, -di/dt = -100A/R = - 43V, VGS = 0V μs 55 100 - 3.6 nCnsA<br>Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.<br>TO-263 Outline Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 4.06 4.83 .160 .190<br>b 0.51 0.99 .020 .039<br>b2 1.14 1.40 .045 .055 Pins: 1 - Gate 2 - Drain<br>c 0.40 0.74 .016 .029 3 - Source<br>c2 1.14 1.40 .045 .055<br>D 8.64 9.65 .340 .380<br>D1 8.00 8.89 .280 .320<br>E 9.65 10.41 .380 .405<br>E1 6.22 8.13 .270 .320<br>1. G ate e 2.54 BSC .100 BSC<br>2. Drain L 14.61 15.88 .575 .625<br>3. Source L1 2.29 2.79 .090 .110<br>4. Drain L2 1.02 1.40 .040 .055<br>L3 1.27 1.78 .050 .070<br>L4 0 0.13 0 .005<br>IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.<br>IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2<br>by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2<br>4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537<br>**----- End of picture text -----**<br> **IXTA96P085T IXTP96P085T IXTH96P085T** **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>-100<br>VGS = -10V<br>-90 - 9V<br> - 8V<br>-80 - 7V<br>-70<br>-60<br>- 6V<br>-50<br>-40<br>-30 - 5V<br>-20<br>-10<br>0<br>0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-350<br>VGS = -10V<br>-300 - 9V<br>- 8V<br>-250<br>-200 - 7V<br>-150<br>- 6V<br>-100<br>-50 - 5V<br>0<br>0 -2 -4 -6 -8 -10 -12 -14 -16 -18<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [538 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = - 48A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br> Junction Temperature<br>-100 1.8<br>VGS = -10V<br>-90 - 9V VGS = -10V<br> - 8V 1.6<br>-80 - 7V<br>-70 1.4 I D = - 96A<br>-60 - 6V I D = - 48A<br>-50 1.2<br>-40<br>- 5V<br>1.0<br>-30<br>-20<br>0.8<br>-10<br>0 0.6<br>0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 48A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>-110<br>1.8<br>VGS = -10V<br>T J = 125ºC -90<br>1.6<br>-70<br>1.4<br>-50<br>1.2<br>T J = 25ºC -30<br>1.0<br>-10<br>0.8<br>0 -50 -100 -150 -200 -250 -300 -350 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved **IXTA96P085T IXTP96P085T IXTH96P085T** **==> picture [261 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>-140<br>-120<br>-100<br>-80<br>T J = 125ºC<br> 25ºC<br>-60<br> - 40ºC<br>-40<br>-20<br>0<br>-2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-300<br>-250<br>-200<br>-150<br>-100 T J = 125ºC<br>TJ = 25ºC<br>-50<br>0<br>-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [261 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>100<br>TJ = - 40ºC<br>80<br>25ºC<br>125ºC<br>60<br>40<br>20<br>0<br>0 -20 -40 -60 -80 -100 -120 -140<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [252 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> -10<br>-9 V DS = - 43V<br>-8 I D = - 48A<br> I G = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 20 40 60 80 100 120 140 160 180<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [530 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 - 1,000<br>f = 1 MHz<br>R DS(on) Limit 10ms 1ms 100µs 25µs<br>Ciss 100ms<br>10,000 - 100<br>C oss DC<br>1,000 - 10<br>T J = 150ºC<br>Crss TC = 25ºC<br>Single Pulse<br>100 - 1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 - 1 - 10 - 100<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. ## **IXTA96P085T IXTP96P085T IXTH96P085T** **==> picture [261 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Resistive Turn-on Rise Time vs.<br> Junction Temperature<br>44<br>40 RG = 1Ω, VGS = -10V<br>VDS = - 43V<br>36<br>32<br>28<br>I D = - 48A<br>24<br>I D = - 24A<br>20<br>16<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br> **Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance** **==> picture [256 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 200 70<br>180 t r td(on) - - - - 65<br>160 TJ = 125ºC, VGS = -10V 60<br>140 VDS = - 43V I D = - 48A, - 24A 55<br>120 50<br>100 45<br>80 40<br>60 35<br>40 30<br>20 25<br>0 20<br>0 2 4 6 8 10 12 14 16 18 20<br>RG - Ohms<br>Fig. 17. Resistive Turn-off Switching Times vs.<br> Drain Current<br>25 66<br>t f t d(off) - - - -<br>24 T J = 125ºC, V GS = - 10V 62<br>VDS = - 43V<br>23 58<br>22 T J = 25ºC, 125ºC 54<br>21 50<br>20 46<br>19 42<br>-24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48<br>ID - Amperes<br> - Nanosecondsr d(on)t<br>t<br> - Nanoseconds<br> - Nanosecondsf d(off)t<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br> **==> picture [260 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 14. Resistive Turn-on Rise Time vs.<br> Drain Current<br>44<br>R G = 1Ω, V GS = -10V<br>40 V DS = - 43V<br>36<br>T J = 25ºC<br>32<br>28<br>24<br>TJ = 125ºC<br>20<br>-24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48<br>ID - Amperes<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br> ## **Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature** **==> picture [256 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 26 70<br>25 t f td(off) - - - - 65<br>RG = 1Ω, VGS = -10V<br>24 VDS = - 43V 60<br>23 I D = - 24A 55<br>22 50<br>I D = - 48A<br>21 45<br>20 40<br>19 35<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsf d(off)t<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br> **Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance** **==> picture [257 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 280 350<br>240 t f td(off) - - - - 300<br>TJ = 125ºC, VGS = -10V<br>200 VDS = - 43V 250<br>160 I D = - 24A, - 48A 200<br>120 150<br>80 100<br>40 50<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20<br>RG - Ohms<br> - Nanosecondsf d(off)t<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved **IXTA96P085T IXTP96P085T IXTH96P085T** **==> picture [538 x 247] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 19. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_96P085T(A6)11-08-10-A **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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