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IXTP75N10P
Power MOSFET, PolarFET, N Channel, 100 V, 75 A, 0.025 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipatio
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 360W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 75A
- Drain Source On State Resistance: 0.025ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 1.82 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHT[TM] Power MOSFET** **IXTA 75N10P V = 100 V DSS IXTP 75N10P I = 75 A D25 IXTQ 75N10P R ≤ 25 m Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated |||||**TO-263 (IXTA)**|**TO-263 (IXTA)**|||| |---|---|---|---|---|---|---|---|---| |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 175°C<br>100<br>V<br>G<br>S<br>~~aw,~~||||||||| |**VDGR**|TJ = 25°C to 175°C; RGS= 1 MΩ<br>100||V||(TAB)|||| |**VGS**|Continuous<br>±20||V|||||| |**VGSM**<br>Transient<br>±30<br>V<br>**ID25**<br>TC = 25°C<br>75<br>A<br>**IDM**<br>TC = 25°C, pulse width limited by TJM<br>200<br>A<br>**IAR**<br>TC = 25°C<br>50<br>A<br>**EAR**<br>TC = 25°C<br>30<br>mJ<br>~~er~~||||**TO-220 (IXTP)**<br>D<br>(TAB)<br>G<br>S<br>~~a~~4||||| |**EAS**|TC = 25°C<br>1.0||J|**TO-3P (IXTQ)**||||| |**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>10||V/ns|||||| ||TJ ≤150°C, RG= 10Ω|||||||| |**PD**|TC = 25°C<br>360||W|||||| |**TJ**<br>**TJM**<br>**Tstg**|-55 ... +175<br>175<br>-55 ... +175||°C<br>°C<br>°C||G<br>D S||(TAB)|| |**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>300<br>Plastic body for 10 s<br>260||°C<br>°C|G = Gate<br>S = Source|G = Gate<br>D = Drain<br>S = Source<br>TAB = Drain|||| |**Md**|Mounting torque<br>(TO-3P / TO-220)<br>1.13/10|Nm/lb.in.||||||| |**Weight**|TO-3P<br>5.5<br>TO-220<br>4||g<br>g|**Features**||||| ||TO-263<br>3||g|l|International standard packages|||| |||||l|Unclamped Inductive Switching (UIS)|||Unclamped Inductive Switching (UIS)| ||||||rated|||| |||||l|Low package inductance|||| |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**<br>**Max.**|||||- easy to drive and to protect|||| |**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**|VGS = 0 V, ID= 250µA<br>100<br>VDS = VGS, ID= 250µA<br>3.0<br>5.5<br>VGS =±20 VDC, VDS= 0<br>±100<br>VDS = VDSS<br>25<br>VGS= 0 V<br>TJ= 125°C<br>250<br>||~~~-~~||V<br>V<br>nA<br>µA<br>µA|**Advantages**<br>l<br>Easy to mount<br>l<br>Space savings<br>l<br>High power density||||| |**RDS(on)**|VGS = 10 V, ID= 0.5 ID25<br>21|25|mΩ|||||| ||Pulse test, t≤300µs, duty cycle d≤2 %|||||||| > l International standard packages > l Unclamped Inductive Switching (UIS) rated > l Low package inductance - easy to drive and to protect DS99158E(12/05) © 2006 IXYS All rights reserved **IXTA 75N10P IXTP 75N10P IXTQ 75N10P** |**Symbol**||**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**| |---|---|---|---|---|---|---|---|---| |||(T|(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)||||| |**gfs**||VDS= 10 V; ID= 0.5 ID25, pulse test||**Min.**<br>20|**Typ.**<br>28<br>~~|~~||**Max.**|S| |**Ciss**|||||2250|||pF| |**Coss**<br>**Crss**||VGS= 0 V, VDS= 25 V, f = 1 MHz|= 25 V, f = 1 MHz|||890<br>275||pF<br>pF| |**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|||VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>RG= 10Ω(External)|||27<br>53<br>66<br>45<br>-|||ns<br>ns<br>ns<br>ns| |**Qg(on)**||||||74||nC| |**Qgs**||VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||||18||nC| |**Qgd**||||||40||nC| |**RthJC**|||||||0.42°C/W|| |**RthCK**||(TO-3P)||||0.21||°C/W| |||(TO-220)||||0.25||°C/W| |**Source-Drain Diode Characteristic Values**||**Source-Drain Diode Characteristic Values**|**Source-Drain Diode Characteristic Values**|**Source-Drain Diode Characteristic Values**||||| |||(T|(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)||||| |**Symbol**||**Test Conditions**||**Min.**||**Typ.**|**Max.**|| |**IS**||VGS= 0 V|||||75|A| |**ISM**||Repetitive|||||200|A| |**VSD**||IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %|||||1.5|V| |**trr**<br>**QRM**||IF= 25 A<br>-di/dt = 100 A/µs<br>VR= 50 V||||120<br>2.0||ns<br>µC| ## **TO-3P (IXTQ) Outline** ## **TO-220 (IXTP) Outline** ## **TO-263 (IXTA) Outline** Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 **IXTA 75N10P IXTP 75N10P IXTQ 75N10P** **==> picture [243 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>80<br>VGS = 10V<br>70 9V<br>60<br>50<br>8V<br>40<br>30<br>7V<br>20<br>10<br>6V<br>0<br>0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> ## **Fig. 3. Output Characteristics @ 125ºC** **==> picture [232 x 405] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>VGS = 10V<br>70<br> 9V<br>60<br>50 8V<br>40<br>30<br>7V<br>20<br>6V<br>10<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>V D S - Volts<br>Fig. 5. RDS(on) Norm alized to<br>0.5 ID25 Value vs. ID<br>2.8<br>2.6 VGS = 10V<br>2.4<br>2.2<br>2 TJ = 125ºC<br>1.8<br>1.6<br>1.4<br>1.2<br>1 T J = 25ºC<br>0.8<br>0 20 40 60 80 100 120<br>I D - Amperes<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [232 x 407] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>110<br>100 VGS = 10V<br>90<br>9V<br>80<br>70<br>60<br>8V<br>50<br>40<br>30<br>7V<br>20<br>10 6V<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11 12<br>V D S - Volts<br>Fig. 4. RDS(on) Norm alized to 0.5 ID25<br>Value vs. Junction Tem perature<br>2.2<br>2 VGS = 10V<br>1.8<br>1.6<br>ID = 75A<br>1.4<br>1.2 I D = 37.5A<br>1<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Drain Current vs. Case Tem perature** **==> picture [229 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXTA 75N10P IXTP 75N10P IXTQ 75N10P** **Fig. 7. Input Admittance** **==> picture [230 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>105<br>90<br>75<br>60<br>45<br>30<br> TJ = 125ºC<br>15 25ºC<br> -40ºC<br>0<br>5 6 7 8 9 10 11<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [231 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180<br>160<br>140<br>120<br>100<br>80<br>60 TJ = 125ºC<br>40<br>TJ = 25ºC<br>20<br>0<br>0.5 0.7 0.9 1.1 1.3 1.5 1.7<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [232 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>f = 1MHz<br>Ciss<br>1000 Coss<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [231 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>36<br>32<br>28 TJ = -40 º C<br> 25ºC<br>24<br> 125ºC<br>20<br>16<br>12<br>8<br>4<br>0<br>0 20 40 60 80 100 120 140 160 180<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [226 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 50V<br>8 I D = 37.5A<br>7 IG = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [234 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TJ = 150ºC<br>RDS(on) Limit T C = 25ºC<br>100 25µs<br>100µs<br>1ms<br>10ms<br>10<br>DC<br>1<br>1 10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXTA 75N10P IXTP 75N10P IXTQ 75N10P** **Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce** **==> picture [493 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 0 .4 5<br>0 .4 0<br>0 .3 5<br>0 .3 0<br>0 .2 5<br>0 .2 0<br>0 .1 5<br>0 .1 0<br>0 .0 5<br>1 1 0 1 0 0 1 0 0 0<br>Puls e W idth - millis ec onds<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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