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IXTP4N80P
Power MOSFET, N Channel, 800 V, 4 A, 3 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 100W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4A
- Drain Source On State Resistance: 3ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 1.07 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Advance Technical Information ## **PolarHV[TM] Power MOSFET** ## **IXTA4N80P IXTP4N80P** **V = 800 V DSS I = 3.6 A D25 R ≤ 3.4 Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|**TO-263 (IXTA)**|||||| |---|---|---|---|---|---|---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|800|V||||||| |G<br>S<br>**VDGR**<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>800<br>V<br>**VGSS **Continuous<br>±30<br>V<br>**VGSM**Transient<br>±40<br>V<br>~~HH~~|||||||||| |**ID25**|TC = 25°C|3.6|A|||(TAB)|||| |**IDM**|TC = 25°C, pulse width limited by TJM|8|A|**TO-220 (IXTP)**|||||| |D<br>(TAB)<br>G<br>S<br>**IAR**<br>TC = 25°C<br>2<br>A<br>**EAR**<br>TC = 25°C<br>20<br>mJ<br>**EAS**<br>TC = 25°C<br>250<br>mJ<br>**dv/dt**<br>IS<br>≤IDM, di/dt≤100 A/μs, VDD ≤VDSS,<br>10<br>V/ns<br>~~1~~|||||||||| ||TJ ≤150°C, RG= 18Ω||||||||| |**PD**|TC = 25°C|100|W|G = Gate<br>S = Source||D = Drain<br>TAB = Drain|||| |**TJ**||-55 ... +150|°C||||||| |**TJM**||150|°C||||||| |**Tstg**||-55 ... +150|°C||||||| |**TL**|1.6 mm (0.062 in.) from case for 10 s|300|°C||||||| |**TSOLD**|Plastic body for 10 s|260|°C||||||| |**Md**|Mounting torque<br>(TO-220)|1.13/10|Nm/lb.in.||||||| |**Weight**|TO-220<br>TO-263|4<br>3|g<br>g|**Features**|||||| International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance |(TC, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |**BVDSS**<br>VGS = 0 V, ID= 250μA<br>800|~~:~~|V<br>~~:~~| |**VGS(th)**<br>VDS = VGS, ID= 100μA<br>3.0<br>~~|~~|~~:~~<br>~~||~~|5.5<br>V<br>~~:~~| |**IGSS**<br>VGS =±30 V, VDS= 0 V<br>~~|~~|~~||~~|±100<br>nA| |**IDSS**<br>VDS = VDSS<br>VGS= 0 V<br>TJ= 125°C<br>~~|~~|~~| |~~<br>~~-~~|5<br>μA<br>150<br>μA<br>~~-~~| |**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300μs, duty cycle d≤2 %|~~-~~|3.4<br>Ω<br>~~-~~| DS99596E(08/06) © 2006 IXYS CORPORATION All rights reserved **IXTA4N80P IXTP4N80P** |**Symbol**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**| |---|---|---|---|---|---| |**gfs**<br>**Ciss**<br>**Coss**<br>**Crss**|(TJ= 25°C, unless otherwise specified)<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>VGS= 0 V, VDS= 25 V, f = 1 MHz|C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**<br>2.5<br>4.0<br>S<br>750<br>pF<br>70<br>pF<br>6.3<br>pF<br>~~—~~|||| ||||||| |**td(on)**||||22|ns| |**tr**<br>**td(off)**<br>**tf**|VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>RG= 18Ω(External)|||24<br>60<br>29|ns<br>ns<br>ns| |**Qg(on)**<br>**Qgs**<br>**Qgd**|VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25|||14.2<br>4.8<br>4.8|nC<br>nC<br>nC| |**RthJC**<br>**RthCS**|(TO-220)|1.25|1.25|1.25<br>0.25|1.25 °C/W<br>°C/W| |**Source-Drain Diode Characteristic Values**|**Source-Drain Diode Characteristic Values**|**Source-Drain Diode Characteristic Values**|||| |**Symbol**|(TJ= 25°C, unless otherwise specified)<br>**Test Conditions**|C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|||| |**IS**|VGS= 0 V||||3.5<br>A| |**ISM**|Repetitive||||8<br>A| |**VSD**<br>**trr**|IF= IS, VGS= 0 V<br>IF= 3.5 A, -di/dt = 100 A/μs,<br>Pulse test, t≤300μs, duty cycle d≤2 %|||560|1.5<br>V<br>ns| ## **TO-263 (IXTA) Outline** **==> picture [120 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 (IXTP) Outline<br>LQ ES7 TT =<br>T<br>|<br>| q<br>cep : 4 :<br>Il<br>ib iL ca<br>\ bt eee io<br>SWIC)<br>Pins: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br> ## **ADVANCE TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXTA4N80P IXTP4N80P** **Fig. 1. Extended Output Characteristics @ 25ºC** **==> picture [231 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>VGS = 10V<br> 8V<br>5<br>4 7V<br>3<br>2<br>6V<br>1<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 2. Output Characteristics** **@ 125ºC** **==> picture [236 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>V GS = 10V<br> 7V<br>3<br>2.5<br>6V<br>2<br>1.5<br>1<br>0.5 5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature** **Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Drain Current** **==> picture [499 x 420] intentionally omitted <==** **----- Start of picture text -----**<br> 3 2.6<br>2.8 VGS = 10V 2.4 VGS = 10V TJ = 125ºC<br>2.6<br>2.4 2.2<br>2.2<br>2<br>2<br>1.8 I D = 3.6A 1.8<br>1.6 1.6<br>1.4 I D = 1.8A<br>1.4<br>1.2<br>1 1.2 TJ = 25ºC<br>0.8<br>1<br>0.6<br>0.4 0.8<br>-50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6<br>TJ - Degrees Centigrade ID - Amperes<br>Fig. 5. Maximum Drain Current vs.<br>Case Temperature Fig. 6. Input Admittance<br>4 4<br>3.5 3.5<br>3 3<br>2.5 2.5<br>TJ = 125ºC<br> 25ºC<br>2 2 -40ºC<br>1.5 1.5<br>1 1<br>0.5 0.5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 4 4.5 5 5.5 6 6.5 7<br>TC - Degrees Centigrade VGS - Volts<br> - Normalized - Normalized<br>DS(on) DS(on)<br>R R<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> © 2006 IXYS CORPORATION All rights reserved **IXTA4N80P IXTP4N80P** **Fig. 7. Transconductance** **==> picture [232 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>TJ = - 40ºC<br>6<br>5<br>TJ = 25ºC<br>4<br>3 TJ = 125 º C<br>2<br>1<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 8. Forward Voltage Drop of Intrinsic Diode** **==> picture [234 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>11<br>10<br>9<br>8<br>7<br>6<br>5<br>4 TJ = 125ºC<br>3<br>2 T J = 25ºC<br>1<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 9. Gate Charge** **Fig. 10. Capacitance** **==> picture [509 x 420] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10,000<br>9 VDS = 400V f = 1 MHz<br> I D = 1.8A<br>8 I G = 10mA 1,000 Ciss<br>7<br>6<br>5 100 Coss<br>4<br>3<br>10 Crss<br>2<br>1<br>0 1<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VDS - Volts<br>Fig. 11. Maximum Transient Thermal Impedance<br>10.00<br>1.00<br>0.10<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> IXYS reserves the right to change limits, test conditions, and dimensions.<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS REF: T_4N80P (3J) 10-23-06.xls **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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