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IXTP3N120
Power MOSFET, N Channel, 1.2 kV, 3 A, 4.5 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 1.2kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 3A
- Drain Source On State Resistance: 4.5ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.95 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **High Voltage Power MOSFET** **V = 1200V DSS I = 3A D25 R 4.5 DS(on)** ## **IXTA3N120 IXTP3N120 IXTH3N120** |N-Channel Enhancement Mode|N-Channel Enhancement Mode||||||| |---|---|---|---|---|---|---|---| |Avalanche Rated<br>Fast Intrinsic Diode|||**TO-263 AA (IXTA)**<br>G<br>S<br>D (Tab)<br>a~~,~~||||| |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|**TO-220AB (IXTP)**|||| |**VDSS**|TJ = 25C to 150C|1200|V||||| |**VDGR**|TJ = 25C to 150C, RGS= 1M|1200|V||||| |**VGSS**|Continuous|20|V||||| |**VGSM**<br>**ID25**|Transient<br>TC = 25C|30<br>3|V<br>A|G<br>D S|D (Tab)||| |**IDM**|TC = 25C, Pulse Width Limited by TJM|12|A|**TO-247 (IXTH)**|||| |**IA**<br>**EAS**<br>**dv/dt**<br>**PD**|TC = 25C<br>TC = 25C<br>IS<br>IDM, VDD VDSS, TJ 150C<br>TC = 25C|3<br>700<br>5<br>200|A<br>mJ<br>V/ns<br>W|D (Tab)<br>G<br>D S<br>2~~”~~|||| |**TJ**||-55 ... +150|C||||| |**TJM**||150|C|G = Gate<br>D = Drain<br>S = Source<br>Tab = Drain|D = Drain<br>Tab = Drain||| |**Tstg**||-55 ... +150|C||||| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C||||| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260 °C|°C|**Features**|||| |**FC**<br>**Md**|Mounting Force (TO-263) 10..65 / 2.2..14.6<br>Mounting Torque (TO-247 & TO-220)<br>1.13 / 10 Nm/lb.in||N/lb<br>1.13 / 10 Nm/lb.in|International Standard Packages<br>High Voltage Package|||International Standard Packages| |**Weight**|TO-263<br>2.5|2.5|g|Fast Intrinsic Diode|||| |TO-220|TO-220<br>3.0|3.0|g|Avalanche Rated|||| ||TO-247<br>6.0 g|6.0 g|6.0 g|Molding Epoxies meet UL 94 V-0|||Molding Epoxies meet UL 94 V-0| - International Standard Packages - High Voltage Package - Avalanche Rated - Molding Epoxies meet UL 94 V-0 Flammability Classification - High Blocking Voltage |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA 1200||V| |**VGS(th)**<br>VDS = VGS, ID= 250A<br>2.5 5.0 V|2.5 5.0 V|2.5 5.0 V| |**IGSS**<br>VGS =20V, VDS= 0V<br>||100<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>1|25<br>1|25<br>A<br>1mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1<br>4.5|4.5|4.5| ## **Advantages** - Easy to Mount - Space Savings High Power Density ## **Applications** - High Voltage Power Supplies - Capacitor Discharge Applications Pulse Circuits DS98844F(0515) © 2015 IXYS CORPORATION, All Rights Reserved ## **IXTA3N120 IXTP3N120 IXTH3N120** |**Symbol**<br>(TJ= 25C, Unless Otherwise Specified)|**Test Conditions Characteristic Values**<br>C, Unless Otherwise Specified)**Min. Typ. Max**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max**|| |---|---|---|---|---|---| |**gfs**|VDS= 20V, ID= 0.5**•**ID25, Note 1 1.5 2.6 S|, Note 1 1.5 2.6 S|, Note 1 1.5 2.6 S|, Note 1 1.5 2.6 S|, Note 1 1.5 2.6 S| |**Ciss**||1100|1100|1350 pF|1350 pF| |**Coss**<br>**Crss**|VGS= 0V, VDS= 25V, f = 1MHz|110 135<br>40|110 135<br>40<br>60 pF|110 135<br>60 pF|pF<br>60 pF| |**td(on)**|**Resistive Switching Times**|17|17|ns|ns| |**tr**<br>**td(off)**<br>**tf**<br>**Qg(on)**|15<br>32<br>18<br>42<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 4.7(External)||15<br>32<br>18<br>42||ns<br>ns<br>ns<br>nC| |**Qgs**|VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br>8||8||nC| |**Qgd**||21|21||nC| |**RthJC**<br>**RthCS**|TO-220|0.62 °C/W<br>0.50 °C/W|0.62 °C/W<br>0.50 °C/W|0.62 °C/W<br>0.50 °C/W|| |**RthCS**|TO-247|0.21 °C/W|0.21 °C/W|0.21 °C/W|| **TO-220 Outline** **==> picture [98 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> ## **Source-Drain Diode** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**| |**IS**<br>VGS= 0V|3 A|3 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM|12 A|12 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1|1.5 V|1.5 V| |**trr**<br>700 ns<br>IF= 3A, VGS= 0V,-di/dt = 100A/s<br>VR= 100V|700 ns|700 ns| Note 1: Pulse test, t 300s, duty cycle, d 2%. **==> picture [128 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 Outline<br>' ER L wleinloca= EG)<br>TT = =<br>e Lif) /<br>| a<br>u ay a yo<br>- iL WV Ve ve Vi<br>be 1 - Gate<br>\ ig 2,4 - Drain<br>SLB) 3 - Source<br>**----- End of picture text -----**<br> **==> picture [260 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 Outline Dim. Millimeter Inches<br>ee Min. es Max. Min. Max.<br>; 4 4 L, e ee A 4.06 4.83 .160 .190<br>— }— s b 0.51 0.99 .020 .039<br>m i 4 | b2 1.14 | 1.40 | .045 | .055<br>ft | ff<br>c 0.40 0.74 .016 .029<br>L a y Lh c2 1.14 1.40 .045 .055<br>D 8.64 9.65 .340 .380<br>re a t | i ¢ D1 8.00 8.89 .280 .320<br>E 9.65 10.41 .380 .405<br>me a ~<br>E1 6.22 8.13 .270 .320<br>e 2.54 BSC .100 BSC<br>J in es ee ee ee<br>L 14.61 15.88 .575 .625<br>L1 2.29 2.79 .090 .110<br>_ — T F u 1.2,4. Drain Gate yy L2L3 1.021.27 Ff 1.401.78 .040.050 fd .055.070<br>3. Source L4 0 0.13 0 .005<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 **IXTA3N120 IXTP3N120 IXTH3N120** **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>3.0<br>VGS = 10V<br> 7V<br>2.5<br>6V<br>2.0<br>1.5<br>1.0<br>5V<br>0.5<br>0.0<br>0 2 4 6 8 10 12<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>6 VGS = 10V<br> 7V<br>5<br>4<br>6V<br>3<br>2<br>1<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [535 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>3.0 3.0<br>VGS = 10V V GS = 10V<br> 7V 2.6<br>2.5 6V<br>2.2<br>2.0 I D = 3A<br>1.8<br>I D = 1.5A<br>1.5<br>5V 1.4<br>1.0<br>1.0<br>0.5 0.6<br>0.0 0.2<br>0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 1.5A Value Fig. 6. Maximum Drain Current vs.<br> vs. Drain Current Case Temperature<br>2.6 3.5<br>2.4 VGS = 10V<br>T J = 125ºC 3.0<br>2.2<br>2.5<br>2.0<br>1.8 2.0<br>1.6 1.5<br>1.4<br>TJ = 25ºC 1.0<br>1.2<br>0.5<br>1.0<br>0.8 0.0<br>0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2015 IXYS CORPORATION, All Rights Reserved ## **IXTA3N120 IXTP3N120 IXTH3N120** **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>6<br>5<br>T J = 125ºC<br>4 25ºC<br> - 40ºC<br>3<br>2<br>1<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [265 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>TJ = 125ºC<br>2 TJ = 25ºC<br>1<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>7<br>TJ = - 40ºC<br>6<br>5<br>25ºC<br>4<br>125ºC<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6 7 8<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> ## **Fig. 10. Gate Charge** **==> picture [250 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br> VDS = 600V<br> I D = 1.5A<br>8 I G = 10mA<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35 40 45<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [535 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.12. Forward-Bias Safe Operating Area<br>Fig. 11. Capacitance<br>10,000 100<br>f = 1 MHz<br>C iss 10 R DS(on) Limit 25µs<br>1,000 100µs<br>1 1ms<br>C oss<br>100 10ms<br>0.1 TJ = 150ºC DC<br>C rss TC = 25ºC<br> Single Pulse<br>10 0.01<br>0 5 10 15 20 25 30 35 40 10 100 1,000 10,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTA3N120 IXTP3N120 IXTH3N120** **==> picture [538 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.001 0.01 0.1 1<br>Pulse Width - Second<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N120(4U) 5-06-15-A **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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