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IXTP34N65X2
Power MOSFET, N Channel, 650 V, 34 A, 0.096 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: X2-Class
- Qualification: -
- Power Dissipation: 540W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 34A
- Drain Source On State Resistance: 0.096ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 2.86 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **X2-Class IXTP34N65X2 Power MOSFET IXTH34N65X2** N-Channel Enhancement Mode Avalanche Rated **V = 650V DSS I = 34A D25 R 96m DS(on) TO-220 (IXTP)** |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>650<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>650<br>V<br>~~—~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>650<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>650<br>V<br>~~—~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>650<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>650<br>V<br>~~—~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>650<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>650<br>V<br>~~—~~|S<br>G<br>D|S<br>G<br>D|S<br>G<br>D|D (Tab)|D (Tab)| |---|---|---|---|---|---|---|---|---| |**VGSS**<br>**VGSM**|Continuous<br>Transient|30<br>40|V<br>V|**TO-247**<br>**(IXTH)**||||| |**ID25**<br>**IDM**<br>**IA**<br>**EAS**|TC = 25C<br>TC = 25C, Pulse Width Limited by TJM<br>TC = 25C<br>TC = 25C|34<br>68<br>17<br>1|A<br>A<br>A<br>J|G = Gate D = Drain<br>G<br>S<br>D||G = Gate D = Drain|G = Gate D = Drain<br>D(Tab)|| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 15 V/ns|150°C 15 V/ns|150°C 15 V/ns|S = Source Tab = Drain|S = Source Tab = Drain|S = Source Tab = Drain|S = Source Tab = Drain|S = Source Tab = Drain| |**PD**|TC = 25C|540|W|||||| |**TJ**||-55 ... +150|C|||||| |**TJM**||150|C|||||| |**Tstg**||-55 ... +150|C|**Features**||||| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C|||||| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C|International Standard Packages||International Standard Packages||International Standard Packages| |**Md**|Mounting Torque<br>1.13 / 10 Nm/lb.in|1.13 / 10 Nm/lb.in||Low RDS(ON)and Q<br>Avalanche Rated|and QG<br>Avalanche Rated|||| |**Weight**<br>TO-247|TO-220<br>3<br>TO-247<br>6|3<br>6|g<br>g|Low Package Inductance||||| G = Gate D = Drain S = Source Tab = Drain > International Standard Packages ## **Advantages** - High Power Density **Symbol Test Conditions Characteristic Values** (TJ = 25C, Unless Otherwise Specified) **Min. Typ. Max.** - Easy to Mount > Space Savings **BVDSS** VGS = 0V, ID = 1mA 650 V **Applications VGS(th)** VDS = VGS, ID = 250μA 3.0 5.0 V Switch-Mode and Resonant-Mode **IGSS** VGS = 30V, VDS = 0V 100 nA Power Supplies DC-DC Converters **IDSS** VDS = VDSS, VGS = 0V 10 A PFC Circuits TJ = 125C 150 μA AC and DC Motor Drives **RDS(on)** VGS = 10V, ID = 0.5 **•** ID25, Note 1 96 m Robotics and Servo Controls DS100675D(6/18) © 2018 IXYS CORPORATION, All Rights Reserved **IXTP34N65X2 IXTH34N65X2** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 20|33|S| |**RGi**<br>Gate Input Resistance<br>|0.90|| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|3000<br>2180<br>1.7|pF<br>pF<br>pF| |**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|125<br>490|pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|30<br>48<br>68<br>30|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|54<br>15<br>20|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-247|<br>0.50<br>0.21|0.23C/W<br> C/W<br> C/W| |**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**IS**<br>VGS= 0V||34 A| |**ISM**<br>Repetitive, pulse Width Limited by TJM||136 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4 V| |**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 17A, -di/dt = 100A/μs<br>VR= 100V|390<br>4.2<br>21.8|ns<br>μC<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 **IXTP34N65X2 IXTH34N65X2** **==> picture [263 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>35<br>V GS = 10V<br> 8V<br>30<br>7V<br>25<br>20<br>15<br>6V<br>10<br>5<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [202 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>**----- End of picture text -----**<br> **==> picture [253 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>VGS = 10V<br>80 9V<br>70<br>8V<br>60<br>7V<br>50<br>40<br>30<br>20 6V<br>10<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 17A Value vs. Junction Temperature** **Fig. 3. Output Characteristics @ TJ = 125[o] C** **==> picture [532 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> 35 3.8<br>V GS = 10V<br> 8V 3.4 VGS = 10V<br>30<br> 7V<br>3.0<br>25<br>6V 2.6<br>I D = 34A<br>20 2.2<br>1.8<br>15 I D = 17A<br>1.4<br>10<br>1.0<br>5V<br>5<br>0.6<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 17A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>3.8 1.3<br>VGS = 10V<br>3.4<br>1.2<br>3.0 TJ = 125 [o] C 1.1 BVDSS<br>2.6<br>1.0<br>2.2<br>0.9<br>1.8<br>TJ = 25 [o] C<br>0.8<br>1.4 VGS(th)<br>1.0 0.7<br>0.6 0.6<br>0 10 20 30 40 50 60 70 80 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTP34N65X2 IXTH34N65X2** **==> picture [538 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>40<br>60<br>35<br>50<br>30<br>25 40 TJ = 125 [o] C<br> 25 [o] C<br> - 40 [o] C<br>20<br>30<br>15<br>20<br>10<br>10<br>5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **Fig. 9. Transconductance** **Fig. 10. Forward Voltage Drop of Intrinsic Diode** **==> picture [530 x 398] intentionally omitted <==** **----- Start of picture text -----**<br> 60 100<br>TJ = - 40 [o] C<br>50<br>80<br>25 [o] C<br>40<br>60<br>125 [o] C<br>30<br>40<br>20 TJ = 125 [o] C<br>20 TJ = 25 [o] C<br>10<br>0 0<br>0 10 20 30 40 50 60 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> VDS = 325V<br> I D = 17A<br>8 10,000<br> I G = 10mA Ciss<br>6 1,000<br>Coss<br>4 100<br>2 10<br>f = 1 MHz<br>C rss<br>0 1<br>0 5 10 15 20 25 30 35 40 45 50 55 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTP34N65X2 IXTH34N65X2** **==> picture [537 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>30 100<br>25μs<br>25<br>RDS(on) Limit<br>100μs<br>20 10<br>15<br>10 1<br> TJ = 150 [o] C<br>5 T C = 25 [o] C 1ms<br> Single Pulse<br>0 0.1<br>0 100 200 300 400 500 600 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br> ## **Fig. 15. Maximum Transient Thermal Impedance** **==> picture [525 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_34N65X2 (X5-S602) 1-06-16 **IXTP34N65X2 IXTH34N65X2** **==> picture [65 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 Outline<br>**----- End of picture text -----**<br> **==> picture [30 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> 1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [163 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> —_ TO-247 Outline<br>«te P=£8) |<br>teat<br>elI OntWy tb<br>> T<br>23 | serraor L<br>t<br>T<br>a<br>‘<br>" =<br>1 - Gate<br>bt<br>2,4 - Drain<br>ron | ¥ 3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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