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IXTP24N65X2M
Power MOSFET, N Channel, 650 V, 24 A, 0.145 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: X2-Class
- Qualification: -
- Power Dissipation: 37W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 24A
- Drain Source On State Resistance: 0.145ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.73 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **X2-Class Power MOSFET** ## **IXTP24N65X2M** **V = 650V DSS I = 24A D25 R 145m DS(on)** ## **(Electrically Isolated Tab)** N-Channel Enhancement Mode |**Symbol**|**Test Conditions**|**Maximum Ratings**|| |---|---|---|---| |**VDSS**<br>TJ = 25C to 150C<br>650<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>650<br>V<br>**VGSS**<br>Continuous<br>30<br>V<br>~~OO~~|||| |**VGSM**<br>**ID25**|Transient<br>TC = 25C, Limited by TJM|40<br>24|V<br>A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|48|A| |**IA**|TC = 25C|12|A| |**EAS**|TC = 25C|600|mJ| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 15 V/ns|150°C 15 V/ns|150°C 15 V/ns| |**PD**<br>**TJ**|TC = 25C|37<br>-55 ... +150|W<br>C| |**TJM**||150|C| |**Tstg**||-55 ... +150|C| |**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering 300<br>1.6 mm (0.062in.) from Case for 10s 260|Maximum Lead Temperature for Soldering 300<br>1.6 mm (0.062in.) from Case for 10s 260|°C<br>°C| |**VISOL**|50/60 Hz, 1 Minute 2500|50/60 Hz, 1 Minute 2500<br>|V~| |**Md**<br>**Weight**|Mounting Torque<br>1.13 / 10 Nm/lb.in<br>2.5|1.13 / 10 Nm/lb.in<br>2.5<br>g|| **==> picture [114 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> OVERMOLDED<br>TO-220<br>Isolated Tab<br>G D S<br>**----- End of picture text -----**<br> G = Gate D = Drain - S = Source ## **Features** - International Standard Package - Plastic Overmolded Tab - Low RDS(ON) and QG - Avalanche Rated - 2500V~ Electrical Isolation - Low Package Inductance ## **Advantages** - High Power Density - Easy to Mount - Space Savings |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250µA<br>650|~~||~~|V| |**VGS(th)**<br>VDS = VGS, ID= 250µA<br>3.0 5.0 V|5.0 V<br>~~a~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~a~~<br>~~a~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>100|5<br>100<br>~~a—~~|5A<br>100A| |**RDS(on)**<br>VGS = 10V, ID= 12A, Note 1|145 m<br>~~_~~|145 m| ## **Applications** - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls DS100696C(10/18) © 2018 IXYS CORPORATION, All Rights Reserved **IXTP24N65X2M** |**Symbol**<br>(TJ= 25C,|**Test Conditions Characteristic Values**<br>Unless Otherwise Specified)**Min. Typ. Max**|**Test Conditions Characteristic Values**<br>Unless Otherwise Specified)**Min. Typ. Max**|**Test Conditions Characteristic Values**<br>Unless Otherwise Specified)**Min. Typ. Max**| |---|---|---|---| |**gfs**|VDS= 10V, ID= 12A, Note 1 13|22|S| |**RGi**|Gate Input Resistance<br>|1.1|| |**Ciss**||2060|pF| |**Coss**|VGS= 0V, VDS= 25V, f = 1MHz<br>|1470|pF| |**Crss**||1.2|pF| |**Co(er)**|<br>**Effective Output Capacitance**<br>Energy related<br>VGS= 0V|83|pF| |**Co(tr)**|<br>Time related<br>VDS= 0.8 • VDSS|336|pF| |**td(on)**|<br>**Resistive Switching Times**|20|ns| |**tr**<br>**td(off)**<br>**tf**|<br> <br> <br>VGS= 10V, VDS= 0.5 • VDSS, ID= 12A<br>RG= 10 (External)|25<br>50<br>19|ns<br>ns<br>ns| |**Qg(on)**||36|nC| |**Qgs**|VGS= 10V, VDS= 0.5**•**VDSS, ID= 12A<br>|9|nC| |**Qgd**||13|nC| |**RthJC**|||3.37C/W| |**RthCS**||0.50|C/W| ## **Source-Drain Diode** |**Symbol**|**Test Conditions**|**Characteristic**|**Characteristic**|**Values**|| |---|---|---|---|---|---| |(TJ= 25C,|Unless Otherwise Specified)|**Min.**|**Typ.**|**Max**|| |**IS**|VGS= 0V|||24|A| |**ISM**|Repetitive, pulse Width Limited by TJM|||96|A| |**VSD**|IF= IS, VGS= 0V, Note 1|||1.4|V| |**trr**<br>**QRM**<br>**IRM**|<br> <br>IF= 12A, -di/dt = 100A/µs<br>VR= 100V|<br> <br>|390<br>3.3<br> 17|ns<br>µC<br>A|| **==> picture [163 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> OVERMOLDED TO-220<br>(IXTP...M) oP<br>1 2 3<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 ## **IXTP24N65X2M** **==> picture [538 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>24<br>VGS = 10V VGS = 10V<br>50<br> 8V<br>20<br>8V<br>7V 40<br>16<br>7V<br>30<br>12<br>6V 20<br>8<br>4 10 6V<br>5V 5V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 12A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>24 3.8<br>VGS = 10V<br>3.4 VGS = 10V<br>20<br>7V<br>3.0<br>16 2.6<br>6V I D = 24A<br>2.2<br>12<br>1.8<br>I D = 12A<br>8 1.4<br>1.0<br>4 5V<br>0.6<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.6 1.2<br>4.2 VGS = 10V<br>3.8 1.1 BVDSS<br>TJ = 125 [o] C<br>3.4<br>1.0<br>3.0<br>2.6 0.9<br>2.2<br>0.8 VGS(th)<br>1.8 T J = 25 [o] C<br>1.4<br>0.7<br>1.0<br>0.6 0.6<br>0 5 10 15 20 25 30 35 40 45 50 55 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - AmperesID - AmperesID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTP24N65X2M** **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>36<br>32<br>28<br>24<br>T J = 125 [o] C<br>20<br> 25 [o] C<br>- 40 [o] C<br>16<br>12<br>8<br>4<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>45<br>40 TJ = - 40 [o] C<br>35<br>30<br>25 [o] C<br>25<br>125 [o] C<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35 40<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **Fig. 10. Gate Charge** **==> picture [532 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> 80 10<br>70 VDS = 325V<br> I D = 12A<br>8<br>60 I G = 10mA<br>50<br>6<br>40<br>T J = 125 [o] C<br>4<br>30<br>20 T J = 25 [o] C<br>2<br>10<br>0 0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 4 8 12 16 20 24 28 32 36<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Output Capacitance Stored Energy<br>100000 18<br>f = 1 MHz 16<br>10000<br>14<br>1000 Ciss 12<br>10<br>100<br>8<br>Coss<br>10 6<br>4<br>1<br>Crss 2<br>0.1 0<br>1 10 100 1000 0 100 200 300 400 500 600<br>VDS - Volts VDS - Volts<br> - Volts<br> - AmperesIS VGS<br> - MicroJoules<br>OSS<br>E<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXTP24N65X2M** **==> picture [163 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Forward-Bias Safe Operating Area<br>**----- End of picture text -----**<br> **==> picture [258 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>RDS(on) Limit<br>25µs<br>10<br>100µs<br>1<br>0.1 1ms<br> TJ = 150 [o] C<br>10ms<br> TC = 25 [o] C<br> Single Pulse<br>0.01<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 14. Maximum Transient Thermal Impedance** **==> picture [252 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_24N65X2M(X4-S602) 3-24-17 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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