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IXTP16N50P
Power MOSFET, PolarFET, N Channel, 500 V, 16 A, 0.4 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 16A
- Drain Source On State Resistance: 0.4ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 2.0 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHT[TM] IXTA16N50P Power MOSFET IXTP16N50P IXTQ16N50P** **V = 500V DSS I = 16A D25 R ≤ 400m Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated |Avalanche Rated|Avalanche Rated|||&|G<br>S<br>**TO-263 (IXTA)**<br>SP.|G<br>S<br>**TO-263 (IXTA)**<br>SP.|G<br>S<br>**TO-263 (IXTA)**<br>SP.|G<br>S<br>**TO-263 (IXTA)**<br>SP.|G<br>S<br>**TO-263 (IXTA)**<br>SP.|G<br>S<br>**TO-263 (IXTA)**<br>SP.|G<br>S<br>**TO-263 (IXTA)**<br>SP.|G<br>S<br>**TO-263 (IXTA)**<br>SP.|G<br>S<br>**TO-263 (IXTA)**<br>SP.|G<br>S<br>**TO-263 (IXTA)**<br>SP.||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**Symbol**|**Test Conditions**||**Maximum Ratin**|**Maximum Ratings**|||||||||(TAB)|||| |**VDSS**|TJ = 25°C to 150°C||500|V||||||||||||| |**VDGR**<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>500<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>**ID25**<br>TC = 25°C<br>16<br>A<br>**IDM**<br>TC = 25°C, Pulse Width Limited by TJM<br>35<br>A<br>**TO-220 (IXTP)**<br>D<br>(TAB)<br>G<br>S<br>~~SH~~||||||||||||||||| |**IA**|TC = 25°C||16|A|**TO-3P (IXTQ)**|||||||||||| |**EAS**|TC = 25°C||750|mJ||||||||||||| |**dV/dt**|IS<br>≤IDM, VDD ≤VDSS, T|, TJ ≤150°C|10|V/ns||||||||||||| |**PD**|TC = 25°C||300|W||||||||||||| |**TJ**<br>**TJM**|||- 55 ... +150<br>150|°C<br>°C|G<br>D S||||||||(TAB)|(TAB)|(TAB)|(TAB)| |**Tstg**|||- 55 ... +150|°C||||||||||||| |**TL**<br>**TSOLD**|1.6mm (0.062 in.) from Case for 10s<br>Plastic Body for 10s||300<br>260|°C<br>°C|G = Gate<br>S = Source||||||D = Drain<br>TAB = Drain||D = Drain<br>TAB = Drain|||| |**Md**|Mounting Torque|(TO-3P,TO-220)|1.13/10 Nm/lb.in.|1.13/10 Nm/lb.in.|**Features**|||||||||||| |**Weight**|TO-263||2.5|g||||||||||||| ||TO-220<br>TO-3P|5.5 g|3.0<br>5.5 g|g<br>5.5 g|International Standard Packages<br>Avalanche Rated||||International Standard Packages<br>Avalanche Rated|International Standard Packages<br>Avalanche Rated||||International Standard Packages|International Standard Packages|International Standard Packages| S **TO-3P (IXTQ)** G D S (TAB) G = Gate D = Drain S = Source TAB = Drain **Features** International Standard Packages Avalanche Rated Fast Intrinsic Diode Low Package Inductance |**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**<br>~~—s~~|**Min. Typ. Max.**<br>~~—s~~| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**<br>~~—s~~|**Min. Typ. Max.**<br>~~—s~~| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>500|~~—s~~|V<br>~~—s~~| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>3.0 5.5 V|3.0 5.5 V<br>~~=~~|3.0 5.5 V| |**IGSS**<br>VGS =±30V, VDS= 0V<br>±|±<br>~~=~~|±100<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>5<br>TJ= 125°C<br>50|5<br>50<br>~~pf~~|5<br>μA<br>50μA<br>~~pf~~| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>400|400<br>~~pf~~|400 mΩ<br>~~pf~~| ## **Advantages** High Power Density Easy to Mount Space Savings ## **Applications** Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99323F(05/09) © 2009 IXYS CORPORATION, All Rights Reserved ## **IXTA16N50P IXTP16N50P IXTQ16N50P** |**Symbol**<br>(TJ= 25°C, Unless Otherwise Specified)|**Test Conditions Characteristic Values**<br>C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>C, Unless Otherwise Specified)<br>**Min. Typ. Max.**| |---|---|---|---|---| |**gfs**|VDS= 20V, ID= 0.5 • ID25, Note 1 9 16|, Note 1 9 16||S| |||||| |**Ciss**|2480|2480||pF| |**Coss**|VGS= 0V, VDS= 25V, f = 1MHz<br>237|237||pF| |||||| |**Crss**|18|18||pF| |**td(on)**|<br>**Resistive Switching Times**|23||ns| |**tr**<br>**td(off)**<br>**tf**|25<br>70<br>22<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10Ω(External)|25<br>70<br>22||ns<br>ns<br>ns| |**Qg(on)**|43|43||nC| |**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>15|15||nC| |**Qgd**|12|12||nC| |**RthJC**|0.42|0.42|0.42°|°C/W| |**RthCS**|(TO-3P)<br>0.25|0.25||°C/W| ||(TO-220)<br>0.50|0.50|°|°C/W| ## **TO-3P (IXTQ) Outline** ## **Source-Drain Diode** |**Symbol**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|| |---|---|---|---|---|---| |(TJ= 25°C, Unless Otherwise Specified)|C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|| |**IS**|VGS= 0V||16 A|16 A|16 A| |**ISM**<br>**VSD**<br>**trr**|Repetitive, Pulse Width Limited by TJM<br>IF= 16A, VGS= 0V, Note 1<br>IF= 16A, -di/dt = 100A/μs<br>VR= 100V, VGS= 0V|400|64 A<br>1.5 V<br>400|64 A<br>1.5 V|64 A<br>1.5 V<br>ns| ## **TO-220 (IXTP) Outline** Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. ## **TO-263 (IXTA) Outline** ee ROTC) Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXTA16N50P IXTP16N50P IXTQ16N50P** **Fig. 1. Output Characteristics** **==> picture [251 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> @ 25ºC<br>20<br>18 VGS = 10V<br> 8V<br>16<br>14<br>7V<br>12<br>10<br>8<br>6<br>4<br>6V<br>2<br>0<br>0 1 2 3 4 5 6 7 8 9<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature** **==> picture [255 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>VGS = 10V<br>2.8<br>2.4<br>2.0 I D = 16A<br>1.6 I D = 8A<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 5. Maximum Drain Current vs. Case Temperature** **==> picture [255 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 2. Output Characteristics @ 125ºC** **==> picture [254 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 VGS = 10V<br> 8V<br>16 7V<br>14<br>12<br>10 6V<br>8<br>6<br>4<br>5V<br>2<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Drain Current** **==> picture [255 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>2.6 V GS = 10V<br>2.4<br>T J = 125ºC<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>TJ = 25ºC<br>1.2<br>1.0<br>0.8<br>0 2 4 6 8 10 12 14 16 18 20<br>ID - Amperes<br>Fig. 6. Input Admittance<br>20<br>18<br>16<br>14<br>TJ = 125ºC<br>12 25ºC<br> - 40ºC<br>10<br>8<br>6<br>4<br>2<br>0<br>4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2<br>VGS - Volts<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2009 IXYS CORPORATION, All Rights Reserved ## **IXTA16N50P IXTP16N50P IXTQ16N50P** **==> picture [537 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Forward Voltage Drop of<br>Fig. 7. Transconductance<br>Intrinsic Diode<br>28 70<br>TJ = - 40ºC<br>24 60<br>20 50<br>25ºC<br>16 40<br>125ºC<br>12 30<br>8 20 TJ = 125ºC<br>4 10 TJ = 25ºC<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>ID - Amperes VSD - Volts<br> - Siemens<br>gf s - AmperesIS<br>**----- End of picture text -----**<br> **Fig. 9. Gate Charge** **Fig. 10. Capacitance** **==> picture [526 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10,000<br>9 V DS = 250V<br> I D = 8A<br>8 I G = 10mA 1,000 Ciss<br>7<br>6<br>5 100 C oss<br>4<br>3<br>2 10 Crss<br>1<br>f = 1 MHz<br>0 1<br>0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VDS - Volts<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **Fig. 11. Forward-Bias Safe Operating Area** **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [520 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1.00<br>RDS(on) Limit<br>25µs<br>10 0.10<br>100µs<br>1ms<br> T J = 150ºC 10ms<br> TC = 25ºC DC<br> Single Pulse<br>1 0.01<br>10 100 1000 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - ºC / W<br> - Amperes<br>ID (th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_16N50P(5J-745)5-1-09-C **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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