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IXTP160N10T
Power MOSFET, N Channel, 100 V, 160 A, 6100 µohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Trench
- Qualification: -
- Power Dissipation: 430W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 160A
- Drain Source On State Resistance: 6100µohm
- Gate Source Threshold Voltage Max: 4.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.97 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## Preliminary Technical Information ## **Trench[TM]** ## **Power MOSFET** ## **IXTA160N10T IXTP160N10T** **V = 100V DSS I = 160A D25 R 7.0m DS(on)** N-Channel Enhancement Mode Avalanche Rated **TO-263 (IXTA)** **==> picture [50 x 35] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br> |**Symbol**|**Test Conditions**|**Maximum Ratings**|| |---|---|---|---| |**VDSS**|TJ = 25C to 175C|100|V| |**VDGR**|TJ = 25C to 175C, RGS= 1M|100|V| |**VGSS**|Continuous|20|V| |**VGSM**|Transient|30 V|30 V| |~~a~~|||| |**ID25**|TC = 25C (Chip Capability)|160 A|160 A| |**IL(RMS)**|Lead Current Limit, RMS|120|A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|430|A| |**IA**|TC = 25C|25|A| |**EAS**|TC = 25C|500|mJ| |**dV/dt**|IS IDM, VDD VDSS,TJ175C|3|V/ns| |**PD**|TC = 25C|430|W| |**TJ**||-55 ... +175<br>C|| |**TJM**||175<br>C|| |**Tstg**||-55 ... +175<br>C|| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C| |**FC**|Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb||Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb| |**Md**|Mounting Torque (TO-220)|1.13 / 10 Nm/lb.in|| |**Weight**|TO-263|2.5|g| ||TO-220|3.0|g| **TO-220 (IXTP)** G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain **Features** - Ultra-Low On Resistance - Avalanche Rated Low Package Inductance - Easy to Drive and to Protect - 175C Operating Temperature Fast Intrinsic Diode ## **Advantages** - Easy to Mount - Space Savings High Power Density ## **Applications** - Automotive - Motor Drives |||||Automotive| |---|---|---|---|---| |**Symbol**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|Automotive| |(TJ= 25C Unless Otherwise Specified)|C Unless Otherwise Specified)|**Min. Typ. Max.**|**Min. Typ. Max.**|- Motor Drives| |**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**<br>**RDS(on)**|VGS = 0V, ID= 250A<br>VDS = VGS, ID= 250A<br>VGS =20V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T<br>VGS = 10V, ID= 25A, Notes 1& 2|100<br>2.5<br>TJ= 150C<br>= 25A, Notes 1& 2|100<br>V<br>2.5 4.5 V<br>200 nA<br>5A<br>250A<br>6.1 7.0 m<br>~~|~~<br>~~|~~<br>~~| |~~<br>~~| |~~<br>~~7~~<br>~~||~~|- 42V Power Bus<br>- ABS Systems<br>DC/DC Converters and Off-line UPS<br>Primary Switch for 24V and 48V<br>Systems<br>Distributed Power Architechtures<br>and VRMs<br>Electronic Valve Train Systems<br>High Current Switching<br>Applications<br>~~|~~| - Distributed Power Architechtures and VRMs - Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99650A(11/18) © 2018 IXYS CORPORATION, All rights reserved ## **IXTA160N10T IXTP160N10T** **==> picture [533 x 472] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol (TJ = 25C, Unless Otherwise Specified) Test Conditions Characteristic Values Min. Typ. Max. TO-263 Outline T E s C2A eS E1<br>gfs VDS = 10V, ID = 60A, Note 1 65 102 S D L1 D1<br>Ciss 6600 —_ pF r 1 2 a 3 et L2 A1 H er 4 f<br>Coss VGS = 0V, VDS = 25V, f = 1MHz 880 pF b2 b L3c e 0.43 [11.0] e<br>Crss 135 pF 0<br>t 33 ns 0.34 [8.7]<br>d(on) Resistive Switching Times A2 0.66 [16.6]<br>tr VGS 61 ns = 10V, VDS = 0.5 • VDSS, ID = 25A 1 - Gate2,4 - Drain 0.20 [5.0] 0.12 [3.0]<br>td(off) RG 49 ns = 5 (External) 3 - Source | 0.10 [2.5] ii 0.06 [1.6]<br>t 42 ns<br>f<br>Q 132 nC |sym | gihCHESMIN [| MAX |[MILLIMETERMIN | MAX_|_|<br>g(on)<br>Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 37 nC | A1 | .000 [ .008 | 0.00 | 0.20 |<br>Qgd 40 nC ;b | .028 | .035 | 0.70 | 0.90 |<br>| b2 | .046 | 060 | 1.18 | 1.52 |<br>R 0.35C/W ;c | .018 | .024 | 0.45 | 0.60 |<br>thJC<br>| c2 | .049 [| .060 | 1.25 | 1.52 |<br><br>R TO-220 0.50 C/W _D | .340 [370 | 8.63 | 9.40 |<br>thCH<br>LE | .380 | .410 | 9.65 | 10.41 |<br>Source-Drain Diode ‘ft _|_.100 BSC 2.54 BSC<br>Symbol Test Conditions Characteristic Values<br>(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. |pt2 t1 ||.039—|| .060070 || 1.00—|| 1.521.77|<br>‘(e3] | .010 Bsc__| 0.254 BSC _|<br>IS VGS = 0V 160 A<br>ISM Repetitive, Pulse Width Limited by TJM 430 A TO-220 Outline<br>E oP A<br>VSD IF = 25A, VGS = 0V, Note 1 1.0 V [_ ‘ A1 ab<br>trr IF = 25A, V 60 nsGS = 0V Q H1<br>-di/dt = 100A/s, VR = 50V D D2<br>D1<br>Fa l E1<br>EJECTOR A2<br>PIN 12 “I L1 |<br>L<br>Notes: 2. On through-hole packages, R1. Pulse test, t 300s; duty cycle, d DS(on) Kelvin test contact 2%. | e H e1 L c se 1 - Gate 3X b3X b2 |<br> location must be 5mm or less from the package body. 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> ## **PRELIMINARY TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTA160N10T IXTP160N10T** ## **Fig. 1. Output Characteristics @ TJ = 25[o] C** **==> picture [254 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>VGS = 10V<br>140 9V<br> 8V<br>120<br>7V<br>100<br>80<br>60<br>6V<br>40<br>20<br>5V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 150[o] C** **==> picture [255 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>VGS = 10V<br>140 8V<br>120 7V<br>100<br>80<br>6V<br>60<br>40<br>20<br>5V<br>0<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current** **==> picture [255 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 3.4<br> VGS = 10V<br>3.0 15V<br>TJ = 175 [o] C<br>2.6<br>2.2<br>1.8<br>1.4<br>TJ = 25 [o] C<br>1.0<br>0.6<br>0 50 100 150 200 250 300<br>ID - Amperes<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ TJ = 25[o] C** **==> picture [253 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> VGS = 10V 8V<br>250<br> 9V<br>200<br>7V<br>150<br>100<br>50 6V<br>0<br>0 1 2 3 4 5 6 7 8<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature** **==> picture [255 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.6 VGS = 10V<br>2.2 I D = 160A<br>1.8 I D = 80A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case Temperature<br>140<br>120<br> External Lead Current Limit<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All rights reserved ## **IXTA160N10T IXTP160N10T** **Fig. 7. Input Admittance** **Fig. 8. Transconductance** **==> picture [526 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 200 140<br>180<br>120 TJ = - 40 [o] C<br>160<br>140 100 25 [o] C<br>120<br>80<br>100<br>150 [o] C<br>60<br>80<br>TJ = 150 [o] C<br>60 25 [o] C 40<br> - 40 [o] C<br>40<br>20<br>20<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 50 100 150 200<br>VGS - Volts ID - Amperes<br> - AmperesID - Siemensgf s<br>**----- End of picture text -----**<br> **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **==> picture [254 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>TJ = 150 [o] C<br>100<br>T J = 25 [o] C<br>50<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [255 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 50V<br> I D = 25A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [256 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>C iss<br> f = 1 MHz<br>1,000 C oss<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [253 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. ## **IXTA160N10T IXTP160N10T** **Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature** **==> picture [252 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br> RG = 5 VGS = 10V<br>80<br> VDS = 50V<br>70<br>60<br>50 I D = 50A<br>40<br>I D = 25A<br>30<br>20<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br> **Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance** **==> picture [256 x 391] intentionally omitted <==** **----- Start of picture text -----**<br> 170 65<br>t r t d(on)<br>150 TJ = 125 [o] C, VGS = 10V 60<br> VDS = 50V<br>130 I D = 50A 55<br>110 50<br>I D = 25A<br>90 45<br>70 40<br>50 35<br>30 30<br>4 6 8 10 12 14 16 18 20<br>RG - Ohms<br>Fig. 17. Resistive Turn-off<br>Switching Times vs. Drain Current<br>44 80<br>t f td(off)<br> RG = 5, VGS = 10V<br>43 T J = 125 [o] C VDS = 50V 74<br>42 68<br>TJ = 25 [o] C<br>41 62<br>40 T J = 125 [o] C 56<br>39 50<br>TJ = 25 [o] C<br>38 44<br>25 30 35 40 45 50<br>ID - Amperes<br> d ( o n )t<br> - Nanoseconds<br>t r<br> - Nanoseconds<br> d ( o f f )t<br> - Nanoseconds<br>t f<br> - Nanoseconds<br>**----- End of picture text -----**<br> **Fig. 14. Resistive Turn-on Rise Time vs. Drain Current** **==> picture [250 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 75<br>70<br>65<br>TJ = 25 [o] C<br>60<br>55<br> RG = 5 VGS = 10V<br>50 V DS = 50V<br>45<br>40 T J = 125 [o] C<br>35<br>30<br>25 30 35 40 45 50<br>ID - Amperes<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br> **Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature** **==> picture [256 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 90 120<br>t f td(off)<br>80 R G = 5 , V GS = 10V 110<br> VDS = 50V<br>I D = 25A<br>70 100<br>I D = 50A<br>60 90<br>50 80<br>I D = 25A<br>40 70<br>I D = 50A<br>30 60<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> d ( o f f )t<br> - Nanoseconds<br>t f<br> - Nanoseconds<br>**----- End of picture text -----**<br> **==> picture [269 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 18. Resistive Turn-off<br>Switching Times vs. Gate Resistance<br>150 220<br>t f td(off)<br>130 TJ = 125 [o] C, VGS = 10V 190<br> VDS = 50V I D = 25A<br>110 160<br>I D = 50A<br>90 130<br>70 100<br>50 70<br>30 40<br>4 6 8 10 12 14 16 18 20<br>RG - Ohms<br> d ( o f f )t<br> - Nanoseconds<br>t f<br> - Nanoseconds<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All rights reserved IXYS REF: T_160N10T (5V)11-16-06-A **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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