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IXTP140P05T
Power MOSFET, P Channel, 50 V, 140 A, 9000 µohm, TO-220AB, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: TrenchP
- Qualification: -
- Power Dissipation: 298W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 50V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 140A
- Drain Source On State Resistance: 9000µohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.64 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **TrenchP[[TM]]**
**TrenchP[[TM]] IXTA140P05T Power MOSFETs IXTP140P05T IXTH140P05T**
**V = - 50V DSS I = - 140A D25**
> **R ≤ 9m Ω DS(on)**
P-Channel Enhancement Mode Avalanche Rated
**TO-263 AA (IXTA)** G S ~~2~~ D (Tab)
|||||**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|**TO-220AB (IXTP)**|||
|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**<br>**VDSS**<br>**VDGR**<br>**VGSS**<br>**VGSM**<br>~~_~~|**Test Conditions**<br>TJ = 25°C to 150°C<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>Continuous<br>Transient<br>~~_~~|**Maximum Ratings**<br>- 50<br>- 50<br>±15<br>±25<br>~~_~~|V<br>V<br>V<br>V<br>~~_~~|G<br>D <br>~~_a~~|S<br>~~_a~~||~~_a~~|~~_a~~|D (Tab)<br>~~_a~~||
|**ID25**|TC = 25°C (Chip Capability)|-140|A|**TO-247 (IXTH)**|||||||
|**ILRMS**|Lead Current Limit, RMS|-120|A||||||||
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|- 420|A||||||||
|**IA**|TC = 25°C|- 70|A||||||||
|**EAS**<br>**PD**|TC = 25°C<br>TC = 25°C|1<br>298|J<br>W|G<br>S<br>D|||||D (Tab)||
|**TJ**||-55 ... +150|°C|G = Gate||||D = Drain|D = Drain|D = Drain|
|**TJM**||150|°C|S = Source||||Tab = Drain||Tab = Drain|
|**Tstg**||-55 ... +150|°C||||||||
|**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C||||||||
|**TSOLD**|Plastic Body for 10s|260|°C|**Features**|||||||
|**Md**|Mounting Torque (TO-220 & TO-247)|1.13/10 Nm/lb.in.|||||||||
|**Weight**|TO-263<br>TO-220|2.5<br>3.0|g<br>g|International Standard Packages<br> Avalanche Rated||||||International Standard Packages|
|TO-247|TO-247|6.0|g|Extended FBSOA|||||||
G = Gate D = Drain S = Source Tab = Drain
International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low RDS(ON) and QG
## **Advantages**
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|
|---|---|---|
|**BVDSS**<br>VGS = 0V, ID= - 250μA<br>- 50|~~—~~|V<br>~~—~~|
|**VGS(th)**<br>VDS = VGS, ID= - 250μA<br>- 2.0 - 4.0 V|- 2.0 - 4.0 V<br>~~=~~|- 2.0 - 4.0 V|
|**IGSS**<br>VGS =±15V, VDS= 0V<br>±|±<br>~~=~~|±100<br>nA|
|**IDSS**<br>VDS = VDSS,VGS= 0V<br>-10<br>TJ= 125°C<br>- 750|-10<br>- 750<br>~~oo~~|-10<br>μA<br>- 750μA|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>9|9<br>~~oo~~|9 mΩ|
Easy to Mount Space Savings High Power Density
## **Applications**
High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications
DS100027C(01/13)
© 2013 IXYS CORPORATION, All Rights Reserved
## **IXTA140P05T IXTP140P05T IXTH140P05T**
|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|
|---|---|---|---|---|---|
|**gfs**<br>**Ciss**<br>**Coss**<br>**Crss**<br>**td(on)**|VDS= -10V, ID= 0.5 • ID25, Note 1 44 72<br>VGS= 0V, VDS= - 25V, f = 1MHz<br>**Resistive Switching Times**|, Note 1 44 72<br>13.5<br>1640<br>640<br>|, Note 1 44 72<br>13.5<br>1640<br>640<br> 28<br>~~|~~||S<br>nF<br>pF<br>pF<br>ns|
|**tr**<br>**td(off)**<br>**tf**|VGS= -10V, VDS= - 30V, ID= - 50A<br>RG= 1Ω(External)|34<br>38<br>25|34<br>38<br>25|34<br>38<br>25|ns<br>ns<br>ns|
|**Qg(on)**<br>**Qgs**<br>**Qgd**|VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|200<br>50<br>65|200<br>50<br>65|200<br>50<br>65|nC<br>nC<br>nC|
|**RthJC**||0.42|0.42|0.42|0.42°C/W|
|**RthCS**<br>TO-220<br>TO-247<br>**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)**Min. Typ. Max.**||0.50<br>°C/W<br>0.21<br>°C/W<br>**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**||||
|**IS**<br>**ISM**|VGS= 0V<br>Repetitive, Pulse Width Limited by TJM|||-140 A<br>- 560 A|-140 A<br>- 560 A|
|**VSD**|IF= - 70A, VGS= 0V, Note 1|||-1.3 V|-1.3 V|
|||||||
|**trr**<br>**QRM**<br>**IRM**|**RM**<br>IF= - 70A, -di/dt = -100A/μs<br>VR= - 25V, VGS= 0V|53<br>58<br>**RM**- 2.2|53<br>58<br>- 2.2|53<br>58<br>- 2.2|ns<br>nC<br>A|
## **TO-247 Outline**
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|<br>1 = Gate + c<br>2 = Drai n<br>3 = Source<br>**----- End of picture text -----**<br>
## **TO-220 Outline**
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
## **TO-263 Outline**
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Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>
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Pins:<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
**IXTA140P05T IXTP140P05T IXTH140P05T**
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Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-140 -350<br>VGS = -10V VGS = -10V - 9V<br> - 9V<br>-120 - 8V -300 - 8V<br>-100 -250<br>- 7V<br>- 7V<br>-80 -200<br>-60 -150<br>- 6V - 6V<br>-40 -100<br>-20 -50 - 5V<br>- 5V<br>0 0<br>0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -2 -4 -6 -8 -10 -12 -14 -16<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br>
**Fig. 3. Output Characteristics @ TJ = 125ºC**
**Fig. 4. RDS(on) Normalized to ID = - 70A Value vs. Junction Temperature**
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-140 1.6<br>V GS = -10V<br>-120 - 9V - 8V V GS = -10V<br>1.4 I D = - 140A<br>-100<br>- 7V 1.2 I D = - 70A<br>-80<br>-60 - 6V<br>1.0<br>-40<br>- 5V 0.8<br>-20<br>0 0.6<br>0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 70A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>1.8 -140<br>1.7 VGS = -10V -120<br>1.6 TJ = 125ºC External Lead Current Limit<br>-100<br>1.5<br>1.4 -80<br>1.3 -60<br>1.2<br>-40<br>1.1 T J = 25ºC<br>-20<br>1.0<br>0.9 0<br>0 -50 -100 -150 -200 -250 -300 -350 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
© 2013 IXYS CORPORATION, All Rights Reserved
## **IXTA140P05T IXTP140P05T IXTH140P05T**
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Fig. 7. Input Admittance<br>-180<br>-160<br>-140<br>-120<br>TJ = 125ºC<br>-100 25ºC<br> - 40ºC<br>-80<br>-60<br>-40<br>-20<br>0<br>-2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-300<br>-250<br>-200<br>-150<br>-100 T J = 125ºC<br>TJ = 25ºC<br>-50<br>0<br>-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5<br>VSD - Volts<br>Fig. 11. Capacitance<br>100,000<br>f = 1 MHz<br>Ciss<br>10,000<br>C oss<br>1,000<br>C rss<br>100<br>0 -5 -10 -15 -20 -25 -30 -35 -40<br>VDS - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>
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Fig. 8. Transconductance<br>100 TJ = - 40ºC<br>80 25ºC<br>125ºC<br>60<br>40<br>20<br>0<br>0 -20 -40 -60 -80 -100 -120 -140 -160 -180<br>ID - Amperes<br>Fig. 10. Gate Charge<br>-10<br>-9 VDS = - 25V<br> I D = - 70A<br>-8<br> I G = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>
**Fig. 12. Forward-Bias Safe Operating Area**
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- 1,000<br>R DS(on) Limit<br>25µs<br>100µs<br>- 100<br>External Lead 1ms<br>Current Limit<br>- 10 10ms<br>T J = 150ºC 100ms<br>T C = 25ºC DC<br>Single Pulse<br>- 1<br>- 1 - 10 - 100<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
## **IXTA140P05T IXTP140P05T IXTH140P05T**
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Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.<br> Junction Temperature Drain Current<br>38 38<br>36 RG = 1Ω, VGS = -10V 36<br>V DS = - 30V TJ = 25 º C<br>34 34<br>32 32<br>R G = 1Ω, V GS = -10V<br>30 30 V DS = - 30V<br>28 I D = - 50A 28<br>26 I D = - 25A 26<br>T J = 125ºC<br>24 24<br>22 22<br>25 35 45 55 65 75 85 95 105 115 125 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50<br>TJ - Degrees Centigrade ID - Amperes<br>t - Nanosecondsr t - Nanosecondsr<br>**----- End of picture text -----**<br>
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Fig. 16. Resistive Turn-off Switching Times vs.<br> Junction Temperature<br>29 70<br>28 t f td(off)d(off) - - - - 65<br>RG = 1Ω, VGS = -10VG = 1Ω, VGS = -10V = 1Ω, VGS = -10V, VGS = -10V VGS = -10VGS = -10V = -10V0VV<br>27 VDS = - 30V DS = - 30V = - 30V 60<br>26 55<br>25 I D = - 25A, - 50A 50<br>24 45<br>23 40<br>22 35<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br> - Nanosecondsff d(off)tt<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>
**Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance**
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240 80 29 70<br>t r td(on) - - - - 28 t f td(off)d(off) - - - - 65<br>200 T J = 125ºC, V GS = -10V 70 RG = 1Ω, VGS = -10VG = 1Ω, VGS = -10V = 1Ω, VGS = -10V, VGS = -10V VGS = -10VGS = -10V = -10V0VV<br>VDS = - 30V 27 VDS = - 30V DS = - 30V = - 30V 60<br>160 I D = - 50A, - 25A 60<br>26 55<br>120 50<br>25 I D = - 25A, - 50A 50<br>80 40<br>24 45<br>40 30 23 40<br>0 20 22 35<br>0 2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125<br>RG - Ohms TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br>Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.<br> Drain Current Gate Resistance<br>30 70 280 300<br>29 t f t d(off) - - - - 65 240 t f t d(off) - - - - 260<br>RG = 1Ω, VGS = -10V T J = 125ºC, V GS = -10V<br>28 VDS = - 30V 60 200 V DS = - 30V 220<br>27 55<br>160 I D = - 25A, - 50A 180<br>26 50<br>TJ = 25ºC, 125ºC 120 140<br>25 45<br>80 100<br>24 40<br>23 35 40 60<br>22 30 0 20<br>-24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 0 2 4 6 8 10 12 14 16 18 20<br>ID - Amperes RG - Ohms<br> d(on)t d(off)tt<br> - Nanosecondsr - Nanosecondsff<br>t t<br> - Nanoseconds - Nanoseconds<br>t<br>t d(off)<br>t - Nanosecondsf d(off) t - Nanosecondsf<br> - Nanoseconds - Nanoseconds<br>**----- End of picture text -----**<br>
© 2013 IXYS CORPORATION, All Rights Reserved
## **IXTA140P05T IXTP140P05T IXTH140P05T**
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Fig. 19. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_140P05T(A6)11-08-10-A
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Updated at April 29, 2026
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