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IXTP08N100D2
Power MOSFET, N Channel, 1 kV, 800 mA, 21 ohm, TO-220AB, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 60W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 0V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 800mA
- Drain Source On State Resistance: 21ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.02 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **Depletion Mode MOSFET** |**Depletion Mode**|**Depletion Mode**|**IXTY08N100D2**|**IXTY08N100D2**|**IXTY08N100D2**||||**VDSX**||||**= 1000V**|**= 1000V**|**= 1000V**|**= 1000V**|**= 1000V**|**= 1000V**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**MOSFET**||**IXTA08N100D2**||||||**ID(on)**||||**> 800mA**|**800mA**|**800mA**|**800mA**||| |||**IXTP08N100D2**||||||**RDS(on)**||||** 21**|**21**|**21**|**21**||| |**N-Channel**||**TO-252 (IXTY)**<br>G<br>S<br>D (Tab)<br>**G**<br>**D**<br>**S**<br>~~fs~~|||||||||||||||| |||||||||**TO-263 AA (IXTA)**|**TO-263 AA (IXTA)**||||||||| |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|||||||||G|||||| |**VDSX**|TJ = 25C to 150C|1000|||V|||||||||S|||| |**VGSX**|Continuous|20|||V||||||||||D (Tab)||| |**VGSM**|Transient|30|||V||||||||||||| |**PD**|TC = 25C|60|||W|||**TO-220AB (IXTP)**||||**TO-220AB (IXTP)**|||||| |**TJ**<br>**TJM**<br>**Tstg**<br>**TL**<br>**TSOLD**|- 55 ... +150<br>150<br>- 55 ... +150<br>Maximum Lead Temperature for Soldering 300<br>1.6 mm (0.062in.) from Case for 10s 260||||C<br>C<br>C<br>°C<br>°C|||||G||D S<br>D (Tab)<br>~~Ss~~|||||| |**Md**|Mounting Torque (TO-220)|1.13 / 10|Nm/lb.in.|||||G = Gate||||D = Drain|||D = Drain||| |**Weight**|**Weight**TO-252 0.35 g|TO-252 0.35 g|TO-252 0.35 g|TO-252 0.35 g|TO-252 0.35 g|||S = Source||||Tab = Drain|||Tab = Drain||| |TO-263 2.50 g|TO-263 2.50 g|TO-263 2.50 g|TO-263 2.50 g|TO-263 2.50 g|TO-263 2.50 g||||||||||||| |TO-220 3.00 g|TO-220 3.00 g|TO-220 3.00 g|TO-220 3.00 g|TO-220 3.00 g|TO-220 3.00 g||||||||||||| ## **Features** - Normally ON Mode - International Standard Packages |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSX**<br>VGS = - 5V, ID= 25A 1000|~~=~~|V| |**VGS(off)**<br>VDS = 25V, ID= 25A<br>- 2.0 - 4.0 V|- 2.0 - 4.0 V<br>~~—~~|- 2.0 - 4.0 V| |**IGSX**<br>VGS =20V, VDS= 0V<br>|<br>~~—~~|50<br>nA| |**IDSX(off)**<br>VDS = VDSX, VGS= - 5V<br>1<br>TJ= 125C<br>15|1<br>15<br>~~-~~|1<br>A<br>15A| |**RDS(on)**<br>VGS = 0V, ID= 400mA, Note 1<br>21|21<br>~~-~~|21<br>| |**ID(on)**<br>VGS = 0V, VDS= 50V, Note 1<br>800||mA| - Molding Epoxies Meet UL 94 V-0 Flammability Classification ## **Advantages** - Easy to Mount - Space Savings - High Power Density ## **Applications** - Audio Amplifiers - Start-up Circuits - Protection Circuits - Ramp Generators - Current Regulators - Active Loads DS100182C(9/17) © 2017 IXYS CORPORATION, All Rights Reserved ## **IXTY08N100D2 IXTA08N100D2 IXTP08N100D2** |**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**| |**gfs**<br>VDS= 30V, ID= 400mA, Note 1 330|560|mS| |**Ciss**<br> <br>**Coss**<br>VGS= -10V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|325<br>24<br>6.5|pF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS=5V, VDS= 500V, ID= 400mA<br>RG= 10(External)|28<br>57<br>34<br>48|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 5V, VDS= 500V, ID= 400mA<br> <br>**Qgd**<br>|14.6<br>1.2<br>8.3|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>TO-220|<br>0.50|2.08C/W<br>C/W| ## **Safe-Operating-Area Specification** |**Safe-Operating-Area Specification**|**Safe-Operating-Area Specification**|**Safe-Operating-Area Specification**| |---|---|---| |**Characteristic Values**<br><br> <br>||| |**Symbol**<br>**Test Conditions**<br>**Min.**|**Typ.**|**Max.**| |**SOA**<br>VDS= 800V, ID= 45mA, TC= 75C, Tp = 5s 36||W| |**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**| |**VSD**<br>IF= 800mA, VGS= -10V, Note 1|0.8|1.3 V| |**trr**<br> <br>**IRM** <br>**Q** <br>IF= 800mA, -di/dt = 100A/s<br>VR= 100V, VGS= -10V|1.03<br>7.40<br>3.80|μs<br>A<br>μC| |**RM**||| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTY08N100D2 IXTA08N100D2 IXTP08N100D2** **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>0.8<br>V GS = 5V<br> 2V<br>0.7<br> 1V<br>0.6<br>0V<br>0.5<br>0.4<br>- 1V<br>0.3<br>0.2<br>0.1 - 2V<br>0.0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>2.2<br>V GS = 5V<br>2.0<br> 2V<br>1.8 1V<br>1.6<br>1.4<br>1.2<br>0V<br>1.0<br>0.8<br>0.6 - 1V<br>0.4<br>0.2 - 2V<br>0.0<br>0 10 20 30 40 50 60 70 80<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [535 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics @ TJ = 125 [o] C Fig. 4. Drain Current @ TJ = 25 [o] C<br>0.8 1E-01<br>VGS = 5V<br>0.7 1V VGS = - 3.00V<br>1E-02<br>0V - 3.25V<br>0.6<br>1E-03 - 3.50V<br>0.5 - 1V<br>1E-04 - 3.75V<br>0.4<br>1E-05 - 4.00V<br>0.3<br>1E-06 - 4.25V<br>0.2<br>- 2V<br>0.1 1E-07 - 4.50V<br>- 3V<br>0.0 1E-08<br>0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 900 1000 1100 1200<br>VDS - Volts VDS - Volts<br>Fig. 5. Drain Current @ TJ = 100 [o] C Fig. 6. Dynamic Resistance vs. Gate Voltage<br>1.E-01 1.E+11<br>∆VDS = 700V - 100V<br>VGS = - 3.25V 1.E+10<br>1.E-02<br>- 3.50V<br>1.E+09<br>1.E-03 - 3.75V<br>1.E+08<br>- 4.00V TJ = 25 [o] C<br>1.E-04<br>1.E+07<br>- 4.25V<br>T J = 100 [o] C<br>1.E-05<br>1.E+06<br>- 4.50V<br>1.E-06 1.E+05<br>0 100 200 300 400 500 600 700 800 900 1000 1100 1200 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8<br>VDS - Volts VGS - Volts<br> - AmperesID - AmperesID<br> - Ohms<br> - Amperes O<br>ID R<br>**----- End of picture text -----**<br> © 2017 IXYS CORPORATION, All Rights Reserved ## **IXTY08N100D2 IXTA08N100D2 IXTP08N100D2** **==> picture [538 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. RDS(on) Normalized to ID = 0.4A Value<br>Fig. 7. Normalized RDS(on) vs. Junction Temperature vs. Drain Current<br>2.6 2.6<br>V GS = 0V 2.4 VGS = 0V<br>2.2 I D = 0.4A 5V<br>2.2<br>2.0<br>1.8<br>1.8 T J = 125 [o] C<br>1.4 1.6<br>1.4<br>1.0<br>1.2<br>1.0<br>0.6<br>0.8 TJ = 25 [o] C<br>0.2 0.6<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>TJ - Degrees Centigrade ID - Amperes<br> - Normalized - Normalized<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br> **==> picture [538 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Input Admittance Fig. 10. Transconductance<br>1.4 1.2<br>VDS = 30V VDS = 30V<br>1.2<br>1.0 TJ = - 40 [o] C<br>1.0<br>0.8<br>25 [o] C<br>0.8<br>125 [o] C<br>0.6<br>TJ = 125 [o] C<br>0.6<br> 25 [o] C<br> - 40 [o] C 0.4<br>0.4<br>0.2 0.2<br>0.0 0.0<br>-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VGS - Volts ID - Amperes<br>Fig. 11. Breakdown and Threshold Voltages<br>Fig. 12. Forward Voltage Drop of Intrinsic Diode<br>vs. Junction Temperature<br>1.3 2.8<br>VGS = -10V<br>2.4<br>1.2<br>VGS(off) @ VDS = 25V<br>2.0<br>1.1<br>1.6<br>BVDSX @ VGS = - 5V<br>1.2<br>1.0 TJ = 125 [o] C T J = 25 [o] C<br>0.8<br>0.9<br>0.4<br>0.8 0.0<br>-50 -25 0 25 50 75 100 125 150 0.4 0.5 0.6 0.7 0.8 0.9<br>TJ - Degrees Centigrade VSD - Volts<br> - Amperes - Siemens<br>ID gf s<br> - Normalized<br> - Amperes<br>BV / VGS(off) IS<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTY08N100D2 IXTA08N100D2 IXTP08N100D2** **==> picture [535 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Capacitance Fig. 14. Gate Charge<br>1,000 5<br>4 V DS = 500V<br> I D = 400mA<br>3<br>Ciss I G = 1mA<br>2<br>100<br>1<br>C oss 0<br>-1<br>10<br>-2<br>C rss -3<br>f = 1 MHz -4<br>1 -5<br>0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16<br>VDS - Volts QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **Fig. 15. Forward-Bias Safe Operating Area @ TC = 25[o] C** **Fig. 16. Forward-Bias Safe Operating Area @ TC = 75[o] C** **==> picture [538 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> 10.00 10.00<br>RDS(on) Limit RDS(on) Limit<br>25μs<br>1.00 1.00<br>100μs 25μs<br>100μs<br>1ms<br>1ms<br>0.10 10ms 0.10<br>100ms 10ms<br>TJ = 150 [o] C DC TJ = 150 [o] C 100ms<br>TC = 25 [o] C TC = 75 [o] C DC<br>Single Pulse Single Pulse<br>0.01 0.01<br>10 100 1,000 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 17. Maximum Transient Thermal Impedance<br>10<br>1<br>0.1<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - Amperes - Amperes<br>ID ID<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_08N100D2(1C)8-25-09 **==> picture [214 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> IXTY08N100D2 IXTA08N100D2<br>IXTP08N100D2<br>**----- End of picture text -----**<br> **==> picture [517 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> TO-252 AA Outline TO-263 Outline TO-220 Outline<br>— 4 b3 E L3 A 7 c2 r E C2 [ A ik — E1 E oP A1A<br>i L1 D1 |<br>D<br>i L4 1 2 3 _ A2 A1 H 1 2 3 —ti L2 | J A1 H | 4 D Q H1 D2<br>ry - L1 L | b2 i Pg b L3 Q i ty | D1<br>| e1 e1 e i b2 L2 c 1 - Gate2,4 - Drain wir 0c on e id 0.43 [11.0] e ° E1<br> 0 3 - Source<br>OPTIONAL 5.55MIN 0.34 [8.7] EJECTOR A2<br>6.50MIN A2 0.66 [16.6] PIN L1 L<br> 4 1 - Gate 0.20 [5.0] 0.12 [3.0]<br>C o y 6.40 | “|—t i 2,4 - Drain ] t | H<br>1a 2.85MIN 3 - Source St 0.10 [2.5] e 0.06 [1.6] e e1 Z c 3X b3X b2<br>BOTTOMVIEW 2.28 A| 1.25MIN INCHES MILLIMETER 1 - Gate<br>LAND PATTERN RECOMMENDATION 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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