IXTK90P20P

Power MOSFET, P Channel, 200 V, 90 A, 0.044 ohm, TO-264, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
SVHC: No SVHC (12-Jan-2017)
No. of Pins: 3Pins
Channel Type: P Channel
Product Range: PolarP
Qualification: -
Power Dissipation: 890W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-264
Drain Source Voltage Vds: 200V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 90A
Drain Source On State Resistance: 0.044ohm
Gate Source Threshold Voltage Max: 4.5V

Delivery and price
Units per pack	250
Price	11.48 €
Current stock	200+
Lead time	30 days

Datasheet

## **PolarP[TM]** 

## **Power MOSFET** 

## **IXTK90P20P IXTX90P20P** 

**V =    - 200V DSS I =    - 90A D25 R  44m  DS(on)** 

P-Channel Enhancement Mode Avalanche Rated 

|**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**||
|---|---|---|---|---|---|---|---|
|~~OO~~||||||||
|**VDSS**|TJ = 25C to 150C|||- 200|||V|
|**VDGR**|TJ = 25C to 150C, R|C, RGS= 1M||- 200|||V|
|**VGSS**|Continuous||||20||V|
|**VGSM**|Transient||||30||V|
|**ID25**|TC = 25C||||- 90||A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|||- 270|||A|
|**IA**|TC = 25C||||- 90||A|
|**EAS**|TC = 25C||||3.5||J|
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150C||||10||V/ns|
|**PD**|TC = 25C||||890||W|
|**TJ**|||-55 ... +150||-55 ... +150||C|
|**TJM**|||||150||C|
|**Tstg**|||-55 ... +150||-55 ... +150||C|
|**TL**|Maximum Lead Temperature for Soldering                    300|||Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300||°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260||1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260||°C|
|**Md**|Mounting  Force|(PLUS247)               20..120 / 4.5..27                 N/lb||(PLUS247)               20..120 / 4.5..27                 N/lb||(PLUS247)               20..120 / 4.5..27                 N/lb|(PLUS247)               20..120 / 4.5..27                 N/lb|
|Mounting  Torque|Mounting  Torque|(TO-264)|1.13 / 10          Nm/lb.in|||1.13 / 10          Nm/lb.in||
|**Weight**|PLUS247||||6||g|
||TO-264||||10                     g|10                     g|10                     g|
|**Symbol**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|**Test Conditions                                               Characteristic Values**|||**Test Conditions                                               Characteristic Values**||
|(TJ= 25C, Unless Otherwise Specified)|C, Unless Otherwise Specified)||**Min.        Typ.       Max.**||**Min.        Typ.       Max.**|**Min.        Typ.       Max.**||
|**BVDSS**|VGS = 0V, ID= - 250A||- 200||~~|~~||V|
|**VGS(th)**|VDS = VGS, ID= -1mA||- 2.0                      - 4.5     V|- 2.0                      - 4.5     V|- 2.0                      - 4.5     V<br>~~|~~|- 2.0                      - 4.5     V|- 2.0                      - 4.5     V|
|**IGSS**<br>**IDSS**|VGS =20V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T||TJ= 125C|100<br>nA<br>- 50<br>A<br>- 250A<br>~~|_~~||||
|**RDS(on)**|VGS = -10V, ID= 0.5 • ID25,  Note 1||,  Note 1|44  m|44  m|44  m|44  m|



**==> picture [113 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-264 (IXTK)<br>G<br>D<br>S<br>Tab<br>PLUS247 (IXTX)<br>G<br>D<br>S Tab<br>G  =  Gate D     =  Drain<br>S  =  Source Tab  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- International Standard Packages 

- Rugged PolarPTM Process 

- Avalanche Rated 

- Fast Intrinsic Diode 

- Low Package Inductance 

## **Advantages** 

- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

- High-Side Switches 

- Push Pull Amplifiers 

- DC Choppers 

- Automatic Test Equipment 

- Current Regulators 

DS99933D(6/16) 

© 2016 IXYS CORPORATION,  All Rights Reserved 

## **IXTK90P20P IXTX90P20P** 

||||||**IXTK90P20P**<br>**IXTX90P20P**|**IXTK90P20P**<br>**IXTX90P20P**|**IXTK90P20P**<br>**IXTX90P20P**|**IXTK90P20P**<br>**IXTX90P20P**|**IXTK90P20P**<br>**IXTX90P20P**|
|---|---|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Test Conditions                                                  Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)<br>**Min.      Typ.     Max.**<br>**gfs**<br>VDS= -10V, ID= 0.5 • ID25,  Note 1                       30           51<br>**Ciss**<br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br>**Crss**<br>**td(on)**<br>**tr**<br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||**Test Conditions                                                  Characteristic Values**<br>**Min.      Typ.     Max.**<br>,  Note 1                       30           51<br>S<br>12<br>nF<br>2210<br>pF<br>250<br>pF<br> 32<br>ns<br>60<br>ns|||Terminals:<br>1 - Gate<br>2 - Drain<br>**TO-264 AA Outline**<br>TT|||||
|**td(off)**|RG= 1(External)|89|89|ns||||3 - Source<br>4 - Drain||
|**tf**||28|28|ns||Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.||
|**Qg(on)**<br>**Qgs**<br>**Qgd**<br>**RthJC**<br>**RthCS**|205<br>nC<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>45<br>nC<br>80<br>nC<br>0.14C/W<br>0.15<br>C/W<br>A<br>4.82<br>5.13<br>.190<br>.202<br>A1<br>2.54<br>2.89<br>.100<br>.114<br>A2<br>2.00<br>2.10<br>.079<br>.083<br>b<br>1.12<br>1.42<br>.044<br>.056<br>b1<br>2.39<br>2.69<br>.094<br>.106<br>b2<br>2.90<br>3.09<br>.114<br>.122<br>c<br>0.53<br>0.83<br>.021<br>.033<br>D<br>25.91<br>26.16<br>1.020<br>1.030<br>E<br>19.81<br>19.96<br>.780<br>.786<br>e<br>5.46 BSC<br>.215 BSC<br>~~!7~~<br>~~_~~|||||||||
|||||||J|0.00<br>0.25|.000<br>.010||
|||||||K|0.00<br>0.25|.000<br>.010||
|||||||L|20.32<br>20.83|.800<br>.820||
|**Source-Drain Diode**||||||L1|2.29<br>2.59|.090<br>.102||
|||||||P|3.17<br>3.66|.125<br>.144||
|**Symbol**|**Test Conditions                                                  Characteristic Values**|**Test Conditions                                                  Characteristic Values**||||Q<br>Q1|6.07<br>6.27<br>8.38<br>8.69|.239<br>.247<br>.330<br>.342||
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.     Typ.       Max.**||**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**||R<br>R1|3.81<br>4.32<br>1.78<br>2.29|.150<br>.170<br>.070<br>.090||
|**IS**|VGS= 0V                                                                                       - 90     A|= 0V                                                                                       - 90     A|= 0V                                                                                       - 90     A|= 0V                                                                                       - 90     A||S<br>T|6.04<br>6.30<br>1.57<br>1.83|.238<br>.248<br>.062<br>.072||



|**RthCS**<br>0.15|0.15|0.15<br>~~_~~|0.15<br>~~_~~|C/W<br>~~_~~|C/W<br>~~_~~|
|---|---|---|---|---|---|
|**Source-Drain Diode**||||||
|**Symbol**<br>**Test Conditions                                                  Characteristic Values**|**Test Conditions                                                  Characteristic Values**|||||
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**||
|**IS**<br>VGS= 0V                                                                                       - 90     A|= 0V                                                                                       - 90     A|= 0V                                                                                       - 90     A|= 0V                                                                                       - 90     A|= 0V                                                                                       - 90     A|= 0V                                                                                       - 90     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM<br>**VSD**<br>IF= - 45A, VGS= 0V,  Note 1<br>**trr**<br>**QRM**<br>**IRM**<br>IF= - 45A, -di/dt = -150A/s<br>VR= -100V, VGS= 0V|315                  ns<br>6.6<br>- 42                  A|315                  ns<br>6.6<br>- 42                  A|- 360     A<br>- 3.2     V<br>315                  ns<br>6.6<br>- 42                  A|- 360     A<br>- 3.2     V<br>315                  ns<br>6.6<br>- 42                  A|- 360     A<br>- 3.2     V<br>315                  ns<br>6.6C<br>- 42                  A|



**PLUS 247[TM] Outline** 

Note              1:  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>A1<br>A2|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>b1<br>b2|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>D<br>E|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>L<br>L1|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>R|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190|



- IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTK90P20P IXTX90P20P** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-90 -240<br>VGS = -10V V GS = -10V<br>-80        - 9V         - 9V<br>       - 8V -200<br>-70<br>- 7V - 8V<br>-60 -160<br>-50<br>- 6V -120 - 7V<br>-40<br>-30 -80<br>- 6V<br>-20<br>- 5V<br>-40<br>-10 - 5V<br>0 0<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -5 -10 -15 -20 -25 -30<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = - 45A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>-90 2.4<br>VGS = -10V<br>-80        - 9V V GS = -10V<br>       - 8V<br>2.0<br>-70<br>- 7V<br>-60 I  D  = - 90A<br>1.6<br>-50 - 6V I D = - 45A<br>-40<br>1.2<br>-30<br>-20<br>0.8<br>- 5V<br>-10<br>0 0.4<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 45A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.6 -100<br>2.4 -90<br>VGS = -10V<br>2.2 TJ = 125 º C -80<br>-70<br>2.0<br>-60<br>1.8<br>-50<br>1.6<br>-40<br>1.4<br>-30<br>1.2 -20<br>TJ = 25ºC<br>1.0 -10<br>0.8 0<br>0 -30 -60 -90 -120 -150 -180 -210 -240 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes  - Amperes<br>ID ID<br> - Amperes  - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION,  All Rights Reserved 

**IXTK90P20P IXTX90P20P** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>-120 100<br>T J = - 40ºC 90 TJ = - 40ºC<br>-100           25ºC<br>       125ºC  80<br>70<br>-80 25ºC<br>60<br>-60 50 125ºC<br>40<br>-40<br>30<br>20<br>-20<br>10<br>0 0<br>-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 -80 -100 -120 -140<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>-270 -10<br>-240 -9  V DS = -100V<br> I D = - 45A<br>-210 -8  I G = -1mA<br>-7<br>-180<br>-6<br>-150<br>-5<br>-120<br>-4<br>-90 TJ = 125ºC  -3<br>-60 TJ  = 25ºC -2<br>-30 -1<br>0 0<br>-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 20 40 60 80 100 120 140 160 180 200 220<br>VSD - Volts QG - NanoCoulombs<br> - Amperes  - Siemens<br>ID gf s<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [533 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000 - 1,000<br>f = 1MHz<br>R DS(on)  Limit T J  = 150ºC<br>TC = 25ºC<br>Ciss Single Pulse<br>25µs<br>10,000 - 100<br>100µs<br>C oss<br>1ms<br>1,000 - 10<br>10ms<br>C rss<br>100ms<br>DC<br>100 - 1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 - 10 - 100 - 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTK90P20P IXTX90P20P** 

**==> picture [538 x 245] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: T_90P20P(B9)03-25-09-D 

**==> picture [157 x 46] intentionally omitted <==**

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Updated at April 29, 2026

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