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IXTK90N25L2
Power MOSFET, LINEAR L2™, N Channel, 250 V, 90 A, 0.033 ohm, TO-264, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Di
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 960W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 250V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 90A
- Drain Source On State Resistance: 0.033ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 200 |
| Price | 11.66 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Preliminary Technical Information ## **LinearL2[TM] Power MOSFET w/Extended** ## **FBSOA** ## **IXTK90N25L2 IXTX90N25L2** **V = 250V DSS I = 90A D25 R < 33m Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated ## **TO-264** |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|250|V| |**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|250|V| |**VGSS**|Continuous|±20|V| |**VGSM**|Transient|±30|V| |**ID25**|TC = 25°C|90|A| |**IDM**|TC = 25°C, pulse width limited by TJM|360|A| |**IA**|TC = 25°C|45|A| |**EAS**|TC = 25°C|3|J| |**PD**|TC = 25°C|960|W| |**TJ**||-55...+150|°C| |**TJM**||150|°C| |**Tstg**||-55...+150|°C| |**TL**|1.6mm (0.063 in.) from case for 10s|300|°C| |**TSOLD**|Plastic body for 10s|260|°C| |**Md**|Mounting torque (IXTK)|1.13/10 Nm/lb.in.|1.13/10 Nm/lb.in.| |**FC**|Mounting Force (IXTX)|20..120 / 4.5..27|N/lb.| |**Weight**|TO-264|10|g| ||PLUS247|6|g| **==> picture [113 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D S (TAB)<br>G<br>D (TAB)<br>S<br>**----- End of picture text -----**<br> ## **PLUS247** G = Gate D = Drain S = Source TAB = Drain ## **Features** Designed for linear operation International standard packages Avalanche rated Guaranteed FBSOA at 75°C ## **Advantages** - Easy to mount - Space savings - High power density |**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>250|~~|~~|V<br>| |**VGS(th)**<br>VDS = VGS, ID= 3mA<br>2.0<br>4.5 V|4.5 V<br>~~a:~~|4.5 V<br>~~a:~~| |**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±<br>~~a:~~|±200 nA<br>~~a:~~| |**IDSS**<br>VDS = VDSS<br>50<br>VGS = 0V<br>TJ= 125°C<br>2.5<br>~~|~~|50<br>2.5<br>~~|~~<br>~~||~~|50μA<br>2.5 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>33 m<br>~~|~~|33 m<br>~~|~~<br>~~||~~|33 mΩ| ## **Applications** Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators DS100080(11/08) © 2008 IXYS CORPORATION, All rights reserved **IXTK90N25L2 IXTX90N25L2** |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 35 50 65 S|, Note 1 35 50 65 S| |**Ciss**<br>23<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>2140<br>**Crss**<br>360|23<br>2140<br>360| |**td(on)**<br>50<br>**tr**<br>175<br>**td(off)**<br>40<br>**tf**<br>160<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω(External)|50<br>175<br>40<br>160| |**Qg(on)**<br>640<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>125<br>**Qgd**<br>385|640<br>125<br>385| |**RthJC**<br>**RthCS**<br>0.15|0.13<br>0.15| **TO-264 (IXTK) Outline** ## **Safe Operating Area Specification** |**Symbol**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**| |---|---|---|---| ||**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**SOA**|VDS= 250V, ID= 2.3A, TC= 75°C, Tp = 5s 575||W| ## **PLUS 247[TM] (IXTX) Outline** ## **Source-Drain Diode** |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---| |**IS**<br>VGS= 0V|90| |**ISM**<br>Repetitive, pulse width limited by TJM|360 A| |**VSD**<br>IF= 45A, VGS= 0V, Note 1|1.5 V| |**trr**<br>266<br>**IRM**<br>23<br>**QRM**<br>3.0<br>IF= 45A, -di/dt = 100A/μs,<br>VR= 80V, VGS= 0V|266<br>23<br>3.0| Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. **PRELIMINARY TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. **==> picture [115 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> Terminals: 1 - Gate<br>2 - Drain (Collector)<br>3 - Source (Emitter)<br>4 - Drain (Collector)<br>Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 4.83 5.21 .190 .205<br>A1 2.29 2.54 .090 .100<br>A2 1.91 2.16 .075 .085<br>b 1.14 1.40 .045 .055<br>b1 1.91 2.13 .075 .084<br>b2 2.92 3.12 .115 .123<br>C 0.61 0.80 .024 .031<br>D 20.80 21.34 .819 .840<br>E 15.75 16.13 .620 .635<br>e 5.45 BSC .215 BSC<br>L 19.81 20.32 .780 .800<br>L1 3.81 4.32 .150 .170<br>Q 5.59 6.20 .220 0.244<br>R 4.32 4.83 .170 .190<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTK90N25L2 IXTX90N25L2** ## **Fig. 1. Output Characteristics @ 25ºC** **==> picture [251 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>VGS = 20V<br>80 12V<br> 10V<br>70 9V<br>60 8V<br>50<br>40<br>7V<br>30<br>6V<br>20<br>10 5V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [252 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>VGS = 20V<br>270 14V<br> 12V 10V<br>240<br>210 9V<br>180<br>150<br>8V<br>120<br>90<br>7V<br>60<br>30 6V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 3. Output Characteristics @ 125ºC** **Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature** **==> picture [527 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 90 2.4<br>VGS = 20V<br>80 12V 2.2 V GS = 10V<br> 10V<br>70 9V 2.0<br>8V<br>60 1.8<br>I D = 90A<br>50 7V 1.6 I D = 45A<br>40 1.4<br>30 1.2<br>6V<br>20 1.0<br>10 0.8<br>5V<br>0 0.6<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 45A Value Fig. 6. Maximum Drain Current vs.<br>vs. Drain Current Case Temperature<br>2.6 100<br>2.4 VGS = 10V 90<br>80<br>2.2 T J = 125ºC<br>70<br>2.0<br>60<br>1.8<br>50<br>1.6<br>40<br>1.4<br>30<br>1.2 T J = 25ºC 20<br>1.0 10<br>0.8 0<br>0 20 40 60 80 100 120 140 160 180 200 220 240 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved **IXTK90N25L2 IXTX90N25L2** **==> picture [257 x 423] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>160<br>140<br>120<br>TJ = 125ºC<br>100 25ºC<br> - 40ºC<br>80<br>60<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode<br>280<br>240<br>200<br>160<br>120<br>80 T J = 125ºC<br>40 T J = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> ## **Fig. 11. Capacitance** **==> picture [252 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>f = 1 MHz<br>Ciss<br>10,000<br>1,000 Coss<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> ## **Fig. 8. Transconductance** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>110 TJ = - 40ºC<br>100<br>90 25ºC<br>80<br>125ºC<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [245 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br> V DS = 125V<br>14<br> I D = 45A<br>12 I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 100 200 300 400 500 600 700 800 900 1000<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [251 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. ## **IXTK90N25L2 IXTX90N25L2** ## **Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC** **==> picture [253 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000<br>R DS(on) Limit<br>25µs<br>100<br>100µs<br>1ms<br>10 10ms<br>100ms<br>T J = 150ºC DC<br>TC = 25 º C<br>Single Pulse<br>1<br>10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC** **==> picture [254 x 259] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000<br>R DS(on) Limit<br>100<br>25µs<br>100µs<br>1ms<br>10<br>10ms<br>T J = 150ºC 100ms<br>TC = 75 º C DC<br>Single Pulse<br>1<br>10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_90N25L2(9R)12-01-08
Updated at April 27, 2026
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