IXTK180N15P

Power MOSFET, N Channel, 150 V, 180 A, 0.01 ohm, TO-264, Through Hole

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 800W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-264
Drain Source Voltage Vds: 150V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 180A
Drain Source On State Resistance: 0.01ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	7.39 €
Current stock	10+
Lead time	30 days

Datasheet

## **Polar[TM]** 

**V =   150V DSS I =   180A D25 R  11m  DS(on)** 

|**Polar[TM]**||**IXTK180N15P**|**IXTK180N15P**|**VDSS**<br>**=   150V**|**=   150V**|||
|---|---|---|---|---|---|---|---|
|**Power MOSFET**||||**ID25**<br>**=   180A**||||
|||||**RDS(on)** **   11m**||||
|N-Channel Enhancement Mode||||||||
|Avalanche Rated|Avalanche Rated|||||||
|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 175C<br>150<br>V<br>**VDGR**<br>TJ = 25C to 175C, RGS= 1M<br>150<br>V<br>**VGSS**<br>Continuous<br>20<br>V<br>**VGSM**<br>Transient<br>30<br>V<br>**ID25**<br>TC = 25C<br>180<br>A<br>**IL(RMS)**External Lead Current Limit                                             75                   A<br>**IDM**<br>TC = 25C, Pulse Width Limited by TJM<br>380                    A<br>~~ee ~~||||G  =  Gate<br>D     =  Drain<br>S  =  Source<br>Tab  =  Drain<br>**TO-264**<br>S<br>G<br>D<br>Tab<br> ~~eal~~||||
|**IA**|TC = 25C|60|A|||||
|**EAS**|TC = 25C|4|J|||||
|**PD**|TC = 25C|800|W|||||
|**dv/dt**I|IS IDM, VDD VDSS, TJ 175°C                                      10                V/ns|175°C                                      10                V/ns|175°C                                      10                V/ns|||||
|**TJ**<br>**TJM**||-55 ... +175<br>175|C<br>C|**Features**||||
|**Tstg**||-55 ... +175|C|International Standard Package|International Standard Package|||
|**TL**|1.6mm (0.062 in.) from Case for 10s|300|C|Avalanche Rated||||
|**TSOLD**|Plastic Body for 10s|260|C|Low Package Inductance||||
|**Md**|Mounting Torque|1.13/10|Nm/lb.in.|Fast intrinsic Diode<br>Dynamic dv/dt Rated||||
|**Weight**||10|g| Low RDS(on)and QG||||



- Low RDS(on) and QG 

## **Advantages** 

- Easy to mount 

|**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA                                    150||V|
|**VGS(th)**<br>VDS = VGS, ID= 500μA                                    2.5|5.0|5.0<br>V|
|**IGSS**<br>VGS =20V, VDS= 0V||200<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 150C<br>250|25<br>250|25<br>A<br>250A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|11   m|11   m|



- Space savings 

- High power density 

DS99297G(8/15) 

© 2015 IXYS CORPORATION,All Rights Reserved 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25C Unless Otherwise Specified)**Min.       Typ.        Max.**<br>**gfs**<br>VDS= 10V, ID= 0.5 • IDSS, Note 1                     55             86<br>**Ciss**<br>7000<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>2250<br>**Crss**<br>515<br>**td(on)**<br> 30<br>**Resistive Switching Times**<br>~~PI~~LXYS~~|~~|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25C Unless Otherwise Specified)**Min.       Typ.        Max.**<br>**gfs**<br>VDS= 10V, ID= 0.5 • IDSS, Note 1                     55             86<br>**Ciss**<br>7000<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>2250<br>**Crss**<br>515<br>**td(on)**<br> 30<br>**Resistive Switching Times**<br>~~PI~~LXYS~~|~~|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25C Unless Otherwise Specified)**Min.       Typ.        Max.**<br>**gfs**<br>VDS= 10V, ID= 0.5 • IDSS, Note 1                     55             86<br>**Ciss**<br>7000<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>2250<br>**Crss**<br>515<br>**td(on)**<br> 30<br>**Resistive Switching Times**<br>~~PI~~LXYS~~|~~|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25C Unless Otherwise Specified)**Min.       Typ.        Max.**<br>**gfs**<br>VDS= 10V, ID= 0.5 • IDSS, Note 1                     55             86<br>**Ciss**<br>7000<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>2250<br>**Crss**<br>515<br>**td(on)**<br> 30<br>**Resistive Switching Times**<br>~~PI~~LXYS~~|~~|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25C Unless Otherwise Specified)**Min.       Typ.        Max.**<br>**gfs**<br>VDS= 10V, ID= 0.5 • IDSS, Note 1                     55             86<br>**Ciss**<br>7000<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>2250<br>**Crss**<br>515<br>**td(on)**<br> 30<br>**Resistive Switching Times**<br>~~PI~~LXYS~~|~~|**Characteristic Values**<br>**Min.       Typ.        Max.**<br>S<br>pF<br>pF<br>pF<br>ns|**Characteristic Values**<br>**Min.       Typ.        Max.**<br>S<br>pF<br>pF<br>pF<br>ns|**IXTK180N15P**<br> **TO-264 (IXTK) Outline**<br>a|**IXTK180N15P**<br> **TO-264 (IXTK) Outline**<br>a|**IXTK180N15P**<br> **TO-264 (IXTK) Outline**<br>a|**IXTK180N15P**<br> **TO-264 (IXTK) Outline**<br>a|**IXTK180N15P**<br> **TO-264 (IXTK) Outline**<br>a|**IXTK180N15P**<br> **TO-264 (IXTK) Outline**<br>a|**IXTK180N15P**<br> **TO-264 (IXTK) Outline**<br>a|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**t**r<br>**td(off)**<br>**t**f||VGS= 10V, VDS= 0.5 • VDSS, ID= 60A<br>RG= 3.3(External)|32<br>150<br>36|32<br>150<br>36||ns<br>ns<br>ns||Dim.|Millimeter<br>Min.<br>Max.||Terminals:<br>1 - Gate<br>2 - Drain<br>3 - Source<br>4 - Drain<br>Inches<br>Min.<br>Max.|||
|**Qg(on)**|||240|240||nC||A<br>A1|4.82<br>2.54|5.13<br>2.89|.190<br>.100|.202<br>.114||
|**Qgs**||VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • IDSS|55|55||nC||A2<br>b|2.00<br>1.12|2.10<br>1.42|.079<br>.044|.083<br>.056||
|**Qgd**|||140|140||nC||b1<br>b2|2.39<br>2.90|2.69<br>3.09|.094<br>.114|.106<br>.122||
|**RthJC**|||0.18|0.18|0.18|0.18C/W||c<br>D|0.53<br>25.91|0.83<br>26.16|.021<br>1.020|.033<br>1.030||
|**RthCS**||0.15|0.15|0.15||C/W||E<br>e|19.81<br>5.46 BSC|19.96<br>5.46 BSC|.780<br>.215 BSC|.786<br>.215 BSC||
|||||||||J|0.00|0.25|.000|.010||
|||||||||K|0.00|0.25|.000|.010||
|||||||||L|20.32|20.83|.800|.820||
|||||||||L1|2.29|2.59|.090|.102||
|**Source-Drain Diode**||||||||P<br>Q|3.17<br>6.07|3.66<br>6.27|.125<br>.239|.144<br>.247||
|||||||||Q1|8.38|8.69|.330|.342||
|**Symbol**<br>**Test Conditions**<br>(TJ= 25C Unless Otherwise Specified)|||**Characteristic Values**<br>C Unless Otherwise Specified)**Min.        Typ.        Max.**||**Characteristic Values**<br>**Min.        Typ.        Max.**|||R<br>R1<br>S|3.81<br>1.78<br>6.04|4.32<br>2.29<br>6.30|.150<br>.070<br>.238|.170<br>.090<br>.248||
|||||||||T|1.57|1.83|.062|.072||



|**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**IS**<br>VGS= 0V|180     A|180     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|380     A|380     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|1.5     V|1.5     V|
|**trr**<br>150                   ns<br>**QRM**<br>2.3<br>IF= 25A, -di/dt = 100A/s<br>VR= 100V, VGS= 0V|150                   ns<br>2.3|150                   ns<br>C|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTK180N15P** 

**Fig. 1. Output Characteristics @ 25ºC** 

**==> picture [242 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>VGS = 10V<br>160<br>9V<br>140<br>120 8V<br>100<br>80<br>60<br>7V<br>40<br>20 6V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 150ºC** 

**==> picture [247 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>VGS = 10V<br>160<br>          9V<br>140<br>8V<br>120<br>100<br>80 7V<br>60<br>6V<br>40<br>20<br>5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VD S - Volts<br>Fig. 5. RDS(on) Normalized to ID = 90A Value<br>vs. Drain Current<br>3.4<br>3.0 VGS = 10V  TJ = 175ºC<br>VGS = 15V   - - - - -<br>2.6<br>2.2<br>1.8<br>1.4 T J  = 25ºC<br>1.0<br>0.6<br>0 50 100 150 200 250 300 350<br>I D - Amperes<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**==> picture [255 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics<br>@ 25ºC<br>320<br>280 VGS = 10V<br>240 9V<br>200<br>8V<br>160<br>120<br>7V<br>80<br>40<br>6V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature** 

**==> picture [244 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.8<br>2.6<br>VGS = 10V<br>2.4<br>2.2<br>2.0<br>1.8 I D = 180A<br>1.6 ID = 90A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Drain Current vs. Case Temperature** 

**==> picture [244 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
90<br>80 External Lead Current Limit<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2015 IXYS CORPORATION,All Rights Reserved 

**IXTK180N15P** 

**Fig. 7. Input Admittance** 

**==> picture [245 x 389] intentionally omitted <==**

**----- Start of picture text -----**<br>
250<br>225<br>200<br>175<br>150<br>125<br>TJ = 150ºC<br>100<br>          25ºC<br>75         - 40ºC<br>50<br>25<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VG S - Volts<br>Fig. 9. Source Current vs.<br>Source-To-Drain Voltage<br>350<br>300<br>250<br>200<br>150<br>100 TJ = 150ºC<br>TJ = 25ºC<br>50<br>0<br>0.3 0.5 0.7 0.9 1.1 1.3 1.5<br>VS D - Volts<br> - Amperes<br>D<br>I<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [34 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000<br>**----- End of picture text -----**<br>


**==> picture [254 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
f = 1MHz<br>Ciss<br>10,000<br>C oss<br>1,000<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

**==> picture [244 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>T J  = - 40ºC<br>100<br>25ºC<br>80<br>150ºC<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175 200 225 250<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [242 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9 VDS = 75V<br>8 ID = 90A<br>7 IG = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 25 50 75 100 125 150 175 200 225 250<br>Q G - NanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [247 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>RDS(on) Limit 25µs<br>100µs<br>100<br>1ms<br>10ms<br>TJ = 175ºC<br>DC<br>TC = 25ºC<br>10<br>1 10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTK180N15P** 

## **Fig. 13. Maximum Transient Thermal Impedance** 

**==> picture [511 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width -Seconds<br>ºC / W<br> -<br>( t h ) J C<br>Z<br>**----- End of picture text -----**<br>


© 2015 IXYS CORPORATION,All Rights Reserved 

IXYS REF: T_180N15P(88)6-19-08-D 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Updated at April 27, 2026

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

Learn more →

Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

Request a quote →

Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

BOM Analysis service →