Image not available
Illustrative purposes only
IXTK140N20P
Power MOSFET, PolarFET, N Channel, 200 V, 140 A, 0.018 ohm, TO-264, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 800W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 15V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 140A
- Drain Source On State Resistance: 0.018ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 7.82 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **PolarHT[TM] Power MOSFET** ## **IXTK 140N20P** **V = 200 V DSS I = 140 A D25 R ≤ 18 m Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated |**Symbol**|**Test Conditions**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---|---| |**VDSS**|TJ|= 25°C to 175°C|200|V| |**VDGR**|TJ|= 25°C to 175°C; RGS= 1 MΩ|200|V| |**VGS**|Continuous||±20|V| |**VGSM**|Transient||±30|V| |**ID25**|TC|= 25°C|140|A| |**ID(RMS)**|External lead current limit||75|A| |**IDM**|TC|= 25°C, pulse width limited by TJM|280|A| |**IAR**|TC|= 25°C|60|A| |**EAR**|TC|= 25°C|100|mJ| |**EAS**|TC|= 25°C|4|J| |**dv/dt**|IS<br>TJ|≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br> ≤150°C, RG= 4Ω|10|V/ns| |**PD**|TC|= 25°C|800|W| |**TJ**<br>**TJM**|||-55 ... +175<br>175|°C<br>°C| |**Tstg**|||-55 ... +150|°C| |**TL**|1.6 mm (0.062 in.) from case for 10 s|1.6 mm (0.062 in.) from case for 10 s|300|°C| |**TSOLD**<br>**Md**<br>**Weight**|Plastic body for 10 s<br>Mounting torque||260<br>1.13/10 <br>10|°C<br> Nm/lb.in.<br>g| ## **TO-264 (IXTK)** **==> picture [119 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D S (TAB)<br>G = Gate D = Drain<br>S = Source TAB = Drain<br>**----- End of picture text -----**<br> ## **Features** > l International standard package > l Unclamped Inductive Switching (UIS) rated - l Low package inductance - easy to drive and to protect ## **Advantages** > l Easy to mount > l Space savings > l High power density |(TC, unless otherwise specified)||| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |**BVDSS**<br>VGS = 0 V, ID= 250µA<br>200|~~7~~|V| |**VGS(th)**<br>VDS = VGS, ID= 500µA<br>2.5|~~_~~|5.0<br>V| |**IGSS**<br>VGS =±20 VDC, VDS= 0|~~=~~|±200<br>nA| |**IDSS**<br>VDS = VDSS<br>VGS= 0 V<br>TJ= 150°C|~~=~~|25<br>µA<br>250<br>µA| |**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>VGS = 15 V, ID= 140A<br>Pulse test, t≤300µs, duty cycle d≤2 %|14|18<br>mΩ<br>mΩ| DS99194E(12/05) © 2006 IXYS All rights reserved **IXTK 140N20P** |J<br>**Min.**|**Typ**|**Typ**|**Max.**| |---|---|---|---| |**Min.**|**Typ.**||**Max.**| |**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>50|84||S| |**Ciss**<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**|7500<br>1800<br>280||pF<br>pF<br>pF| |**td(on)**<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 60 A<br>**td(off)**<br>RG= 3.3Ω(External)<br>**tf**<br>~~|~~|30<br>35<br>150<br>90||ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>**Qgd**<br>~~|~~|240<br>50<br>100||nC<br>nC<br>nC| |**RthJC**<br>**RthCK**<br>~~|~~|0.15||0.18°C/W<br>°C/W| |**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min. Typ.**<br>**Max.**<br>~~|~~<br>~~—~~|||| |**IS**<br>VGS= 0 V<br>~~|~~<br>~~—~~||~~—~~|140<br>A<br>~~—~~| |**ISM**<br>Repetitive<br>~~—~~||~~—~~|280<br>A<br>~~—~~| |**VSD**<br>IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %<br>~~—~~||~~—~~|1.5<br>V<br>~~—~~| |**trr**<br>IF= 25 A, -di/dt = 100 A/µs<br>**QRM**<br>VR= 100 V, VGS= 0 V<br>~~—~~||180<br>3.5<br>~~—~~|ns<br>µC<br>~~—~~| IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 **IXTK 140N20P** **Fig. 1. Output Characteristics @ 25ºC** **==> picture [231 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>VGS = 10V<br>120 9V<br> 8V<br>100<br>80<br>7V<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 0.5 1 1.5 2 2.5<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 150ºC** **==> picture [228 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>VGS = 10V<br>120 9V<br> 8V<br>100<br>7V<br>80<br>60<br>6V<br>40<br>20 5V<br>0<br>0 1 2 3 4 5 6<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. Drain Current** **==> picture [232 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>T J = 175ºC<br>3.5<br>3<br>2.5<br>VGS = 10V<br>VGS = 15V<br>2<br>1.5<br>1 TJ = 25ºC<br>0.5<br>0 50 100 150 200 250 300<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [233 x 621] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>270 VGS = 10V 9V<br>240<br>210<br>8V<br>180<br>150<br>120<br>7V<br>90<br>60<br>6V<br>30<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VD S - Volts<br>Fig. 4. RDS(on) Normalized to 0.5 ID25<br>Value vs. Junction Temperature<br>3 V GS = 10V<br>2.5<br>I D = 140A<br>2<br>I D = 70A<br>1.5<br>1<br>0.5<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Temperature<br>90<br>80 External Lead Current Limit<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXTK 140N20P** **Fig. 7. Input Admittance** **==> picture [228 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 225<br>200<br>175<br>150<br>125<br>100<br>75 TJ = 150 º C<br>50 25 º C<br> -40ºC<br>25<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [226 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [232 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>110<br>100<br>90<br>80<br>70<br>60 T J = -40ºC<br>50 25ºC<br>40 150ºC<br>30<br>20<br>10<br>0<br>0 40 80 120 160 200 240<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 100V<br>8 ID = 70A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 25 50 75 100 125 150 175 200 225 250<br>Q G - nanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [499 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 1000<br>f = 1MHz T J = 175ºC<br>R DS(on) Limit T C = 25ºC<br>Ciss<br>10,000 25µs<br>100 100µs<br>C oss<br>1,000 1ms<br>Crss<br>10ms<br>DC<br>100 10<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VDS - Volts VD S - Volts<br> - Amperes<br>D<br>I<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXTK 140N20P** **Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e** **==> picture [491 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1 . 0 0<br>0 . 1 0<br>0 . 0 1<br>0 . 0 0<br>0 . 1 1 1 0 1 0 0 1 0 0 0<br>Pu ls e W id th - millis e c o n d s<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →