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IXTK120N25P
Power MOSFET, PolarFET, N Channel, 250 V, 120 A, 0.024 ohm, TO-264, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 700W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 250V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 0.024ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 7.89 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM] Power MOSFET** ## **IXTK120N25P** **V = 250V DSS I = 120A D25 R ≤ 24m Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ## **TO-264** |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|250|V| |**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|250|V| |**VGSS**|Continuous|±20|V| |**VGSM**|Transient|±30|V| |**ID25**|TC = 25°C|120|A| |**ILRMS**|Terminal Current Limit|75|A| |**IDM**|TC = 25°C, Pulse Width Limited by TJM|300|A| |**IA**T|TC = 25°C|60|A| |**EAS**|TC = 25°C|2.5|J| |**dV/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|10 V/ns|10 V/ns| |**PD**|TC = 25°C|700|W| |**TJ**||-55 ... +150|°C| |**TJM**||150|°C| |**Tstg**||-55 ... +150|°C| |**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C| |**TSOLD**|Plastic Body for 10s|260|°C| |**Md**|Mounting Torque|1.13/10|Nm/lb.in.| |**Weight**|TO-264|10|g| **==> picture [98 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D S (TAB)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source TAB = Drain ## **Features** International Standard Package Fast Intrinsic Diode Avalanche Rated Low Package Inductance ## **Advantages** Easy to Mount Space Savings High Power Density ## **Applications** Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives e Robotics and Servo Controls |**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>250||V| |**VGS(th)**<br>VDS = VGS, ID= 500μA<br>2.5<br>5.0|5.0<br>~~—~~|5.0<br>V<br>~~—~~| |**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±<br>~~—~~|±200 nA<br>~~—~~| |**IDSS**<br>VDS = VDSS, VGS= 0 V<br>25<br>TJ= 125°C 250|25<br>C 250<br>~~=~~|25<br>μA<br>C 250μA<br>~~=~~| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>19|19 24 m<br>~~_~~|24 mΩ<br>~~_~~| DS99175F(5/09) © 2009 IXYS CORPORATION, All Rights Reserved ## **IXTK120N25P** |**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**| |---|---|---|---| |**gfs**|VDS= 10V, ID= 0.5 • ID25, Note 1 45 70|, Note 1 45 70|S| |**Ciss**|8700||nF| |**Coss**|VGS = 0V, VDS= 25V, f = 1MHz<br>1300||pF| |**Crss**|240|240|pF| |**td(on)**|30<br>**Resistive Switching Times**|30|ns| |**tr**|33<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|33|ns| |**td(off)**|130<br>RG= 3.3Ω(External)|130|ns| |**tf**|33|33|ns| |**Qg(on)**|185|185|nC| |**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>50|50|nC| |**Qgd**<br>**RthJC**<br>**RthCK**|80<br>0.18<br>0.15<br>~~_~~||nC<br>0.18 °C/W<br>°C/W| |**Source-Drain Diode**|||| |**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**<br>**IS**<br>VGS= 0V<br>120<br>A<br>**ISM**<br>Repetitive, Pulse Width Limited by TJM<br>300<br>A<br>**VSD**<br>IF= 120A, VGS= 0V<br>1.5<br>V<br>**trr**<br>200<br>ns<br>**QRM**<br>3.0<br>μC<br>**IRM**<br>8.0 A<br>IF= 25A, -di/dt = 100A/μs<br>V**R**= 100V, V**GS**= 0V<br>~~— =~~|||| |Note 1:|Pulse Test, t≤300μs; Duty Cycle, d≤2%.||| **==> picture [97 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 (IXTK) Outline<br>**----- End of picture text -----**<br> |Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| |---|---|---| |A<br>A1<br>A2|4.82<br>5.13<br>2.54<br>2.89<br>2.00<br>2.10|.190<br>.202<br>.100<br>.114<br>.079<br>.083| |b<br>b1<br>b2|1.12<br>1.42<br>2.39<br>2.69<br>2.90<br>3.09|.044<br>.056<br>.094<br>.106<br>.114<br>.122| |c|0.53<br>0.83|.021<br>.033| |D|25.91<br>26.16|1.020<br>1.030| |E<br>e|19.81<br>19.96<br>5.46 BSC|.780<br>.786<br>.215 BSC| |J|0.00<br>0.25|.000<br>.010| |K|0.00<br>0.25|.000<br>.010| |L<br>L1|20.32<br>20.83<br>2.29<br>2.59|.800<br>.820<br>.090<br>.102| |P|3.17<br>3.66|.125<br>.144| |Q<br>Q1|6.07<br>6.27<br>8.38<br>8.69|.239<br>.247<br>.330<br>.342| |R<br>R1|3.81<br>4.32<br>1.78<br>2.29|.150<br>.170<br>.070<br>.090| |S|6.04<br>6.30|.238<br>.248| |T|1.57<br>1.83|.062<br>.072| |IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.|IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.|e Limits, Test Conditions, and Dimensions.|e Limits, Test Conditions, and Dimensions.|e Limits, Test Conditions, and Dimensions.|e Limits, Test Conditions, and Dimensions.|||||| |---|---|---|---|---|---|---|---|---|---|---| |IXYS MOSFETs and IGBTs are covered|4,835,592|4,931,844|5,049,961|5,237,481|6,162,665|6,404,065 B1|6,683,344||6,727,585|7,005,734 B2 7,157,338B2| |by one or more of the following U.S. patents:|4,850,072|5,017,508|5,063,307|5,381,025|6,259,123 B1|6,534,343|6,710,405 B2||6,759,692|7,063,975 B2| ||4,881,106|5,034,796|5,187,117|5,486,715|6,306,728 B1|6,583,505|6,710,463||6,771,478 B2 7,071,537|| **IXTK120N25P** **Fig. 1. Output Characteristics @ 25ºC** **==> picture [249 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>110 V GS = 10V<br> 9V<br>100<br>90<br>8V<br>80<br>70<br>60<br>50 7V<br>40<br>30<br>20<br>6V<br>10<br>0<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **==> picture [253 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>V GS = 10V<br> 9V<br>100<br>8V<br>80<br>7V<br>60<br>40 6V<br>20<br>5V<br>0<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 60A Value<br>vs. Drain Current<br>3.8<br>3.4 VGS = 10V T J = 150ºC<br> 15V - - - -<br>3.0<br>2.6<br>2.2<br>1.8<br>1.4<br>1.0 TJ = 25ºC<br>0.6<br>0 30 60 90 120 150 180 210 240 270<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [252 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 240 V GS = 10V<br>200 9V<br>160<br>8V<br>120<br>80 7V<br>40<br>6V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature** **==> picture [254 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>2.6 VGS = 10V<br>2.4<br>2.2<br>2.0 I D = 120A<br>1.8<br>1.6 I D = 60A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [251 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80 External Lead Current Limit<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2009 IXYS CORPORATION, All Rights Reserved **IXTK120N25P** **==> picture [259 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>200<br>180<br>160<br>140<br>120<br>100<br>TJ = 125ºC<br>80 25ºC<br> - 40ºC<br>60<br>40<br>20<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode<br>350<br>300<br>250<br>200<br>150<br>100 T J = 125ºC<br>50 TJ = 25ºC<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [247 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>110 TJ = - 40ºC<br>100<br>90<br>80<br>25ºC<br>70<br>60<br>125ºC<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [246 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 V DS = 125V<br> I D = 60A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [529 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 1,000<br>f = 1 MHz R DS(on) Limit<br>25µs<br>Ciss<br>10,000 100<br>100µs<br>C oss 1ms<br>10ms<br>1,000 10<br>DC<br>TJ = 150ºC<br>T C = 25ºC<br>C rss Single Pulse<br>100 1<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXTK120N25P** ## **Fig. 13. Maximum Transient Thermal Impedance** **==> picture [524 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 1.000<br>0.100<br>0.010<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_120N25P(88)4-27-09 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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