IXTK102N65X2

Power MOSFET, X2-Class, N Channel, 650 V, 102 A, 0.03 ohm, TO-264P, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:102A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 1.04kW
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-264P
Drain Source Voltage Vds: 650V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 102A
Drain Source On State Resistance: 0.03ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	300
Price	10.8 €
Current stock	10+
Lead time	30 days

Datasheet

## **X2-Class Power MOSFET** 

## **IXTK102N65X2 IXTX102N65X2** 

**V =    650V DSS I =    102A D25** 

**R  30m  DS(on)** 

|N-Channel Enhancement Mode|N-Channel Enhancement Mode||||||||
|---|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>650<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>650<br>V<br>**VGSS**<br>Continuous<br>30<br>V<br>Avalanche Rated<br>**PLUS247 (IXTX)**<br>**TO-264P (IXTK)**<br>S<br>G<br>D<br>Tab<br>~~nd~~|||||||||
|**VGSM**<br>Transient<br>40<br>V<br>**ID25**<br>TC = 25C<br>102<br>A<br>**IDM**<br>TC = 25C, Pulse Width Limited by TJM<br>204<br>A<br>**IA**<br>TC = 25C<br>25<br>A<br>**EAS**<br>TC = 25C<br>3<br>J<br>**PD**<br>TC = 25C<br>1040<br>W<br>Tab<br>G<br>D S<br>~~De~~<br>~~ee~~|||||||||
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150°C                                      15                V/ns|150°C                                      15                V/ns|150°C                                      15                V/ns|G  =  Gate<br>D     =  Drain|D     =  Drain||||
|**TJ**||-55 ... +150|C|S  =  Source<br>Tab  =  Drain|Tab  =  Drain||||
|**TJM**||150|C||||||
|**Tstg**||-55 ... +150|C||||||
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|**Features**|||||
|**TSOLD**|Plastic Body for 10s<br>260                    °C|260                    °C|260                    °C|International Standard Packages||International Standard Packages|||
|**Md**|Mounting Torque  (TO-264P)|1.13/10|Nm/lb.in|Low QG|||||
|**FC**|Mounting Force    (PLUS247)                    20..120 /4.5..27                 N/lb|Mounting Force    (PLUS247)                    20..120 /4.5..27                 N/lb|Mounting Force    (PLUS247)                    20..120 /4.5..27                 N/lb|Avalanche Rated|||||
|**Weight**|TO-264P|10|g|Low Package Inductance|||||
||PLUS247|6|6g||||||



## **Advantages** 

- High Power Density 

|**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA                                       650||V|
|**VGS(th)**<br>VDS = VGS, ID= 250μA                                   3.0|5.0|5.0<br>V|
|**IGSS**<br>VGS =30V, VDS= 0V||100<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>350|25<br>350|25<br>A<br>350A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|30   m|30   m|



- Easy to Mount 

- Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode Power Supplies 

- DC-DC Converters 

- PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

© 2018 IXYS CORPORATION, All Rights Reserved 

DS100655B(4/18) 

**IXTK102N65X2 IXTX102N65X2** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)**Min.       Typ.        Max**|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)**Min.       Typ.        Max**|**Test Conditions                                               Characteristic Values**<br>**Min.       Typ.        Max**|**Test Conditions                                               Characteristic Values**<br>**Min.       Typ.        Max**|**Test Conditions                                               Characteristic Values**<br>**Min.       Typ.        Max**|**Test Conditions                                               Characteristic Values**<br>**Min.       Typ.        Max**|||**TO-264P Outline**|**TO-264P Outline**|**TO-264P Outline**|**TO-264P Outline**|**TO-264P Outline**|**TO-264P Outline**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**gfs**|VDS= 10V, ID= 0.5 • ID25, Note 1                      50            82                     S|, Note 1                      50            82                     S|, Note 1                      50            82                     S|, Note 1                      50            82                     S|, Note 1                      50            82                     S|, Note 1                      50            82                     S|||||||**Q**<br>**E**<br>r— —i<br>hr||**A**<br>**E1**|||
|**RGi**<br>**Ciss**<br>**Coss**<br>**Crss**|Gate Input Resistance<br>VGS= 0V, VDS= 25V, f = 1MHz|0.7<br>10.9<br>6100<br>12.6|0.7<br>10.9<br>6100<br>12.6|||<br>nF<br>pF<br>pF||**D**<br>**R**<br>**R1**|||||**L1**<br>**Q1**<br>**1**<br>**2**<br>**3**<br>—<br>Sr|T|**4**<br>**D1**<br>**D2**<br>— |<br>7;|||
|**Co(er)**<br>**Co(tr)**<br>**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|367<br>1420                    pF<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2(External)<br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS<br>}|367<br>1420                    pF<br>37<br>28<br>67<br>11|367<br>1420                    pF<br>37<br>28<br>67<br>11<br>~~-~~||1420                    pF<br>ns|pF<br>1420                    pF<br>ns<br>ns<br>ns<br>ns|||Terminals:**1  = Gate**<br>**2,4  = Drain**<br>**3  = Source**<br>**c**<br>**A**<br>**b**<br>**b1**<br>~~**e**~~<br>**b2**<br>**x2**<br>L<br>bh] |b<br>ake<br>~~ol=~~<br>es<br>INCHES<br>MILLIMETERS<br>| b | .035] .049| 0.90] 1.25]|||||||||
|**Qg(on)**||152|152|||nC||||||||||||
|**Qgs**<br>**Qgd**|VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25|57<br>33|57<br>33|||nC<br>nC||||||||D [1.012<br>]1.035]|25.70| 26.30<br>20.30|||||
|**RthJC**<br>**RthCS**|0.15|0.12<br>0.15|0.12<br>0.15|0.12<br>0.15|0.12C/W<br>0.15C/W|||||||||e€<br>[| .215 BSC||20.30<br>17.20<br>5.46 BSC<br>19.50|<br>20.50|||
|||||||||||||||Q_ | .228] .244|||5.80] 6.20]|||
|||||||||||oR|||oR | .150| .165]||||3.80] 4.20]|||
|**Source-Drain Diode**||||||||||||||||||
|||||||**PLUS247**|**PLUS247TM Outline**|||||||||||
|**Symbol**|**Test Conditions**|**Characteristic Values**|||||||Aq||||KI] a2<br>RE|ra|t<br>El|||
|(TJ= 25C, Unless Otherwise Specified)**Min.        Typ.        Max.**||**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|||||||||||||
|**IS**|VGS = 0V||102|102|102|A||||||||||||
|**ISM**|Repetitive, Pulse Width Limited by TJM||408     A|408     A|408     A|408     A||||||||||||
|**VSD**<br>**trr**<br>**QRM**<br>**IRM**|IF= IS, VGS= 0V, Note 1<br>450                  ns<br>11.7<br>52<br>IF= 51A, -di/dt = 100A/s<br>V**R**= 100V, V**GS**= 0V|450                  ns<br>11.7<br>52|1.4<br>450                  ns<br>11.7<br>52|1.4<br>450                  ns|1.4<br>V<br>450                  ns<br>μC<br>A|||||Li<br>—<br>|<br>|<br>ce"<br>Pas<br>A<br>b22<br>4||||b22|ac)<br>PLcs<br>2PLS|||



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Terminals: 1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


Note 1. Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXTK102N65X2 IXTX102N65X2** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>110 240<br>100 V GS = 10V VGS = 10V<br>          8V<br>90 200 8V<br>7V<br>80<br>160 7V<br>70<br>60<br>120<br>50 6V<br>40<br>80<br>30 6V<br>20 40<br>10 5V<br>5V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 51A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>110 3.5<br>V GS = 10V<br>100          7V  VGS = 10V<br>3.0<br>90<br>80 2.5<br>6V<br>70 I  D  = 102A<br>2.0<br>60<br>50 I  D  = 51A<br>1.5<br>40<br>30 5V 1.0<br>20<br>0.5<br>10<br>4V<br>0 0.0<br>0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 51A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.2<br>4.0 V GS = 10V<br>1.1 BV DSS<br>3.5<br>T J  = 125 [o] C<br>1.0<br>3.0<br>2.5 0.9<br>2.0<br>T J  = 25 [o] C 0.8 V GS(th)<br>1.5<br>0.7<br>1.0<br>0.5 0.6<br>0 40 80 120 160 200 240 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - AmperesID  - AmperesID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

**IXTK102N65X2 IXTX102N65X2** 

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**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>110 160<br>100<br>140<br>90<br>120<br>80<br>70 100<br>60<br>80 TJ = 125 [o] C<br>50           25 [o] C<br>40 60 - 40 [o] C<br>30<br>40<br>20<br>20<br>10<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**Fig. 9. Transconductance** 

**Fig. 10. Forward Voltage Drop of Intrinsic Diode** 

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160 300<br>140 TJ = - 40 [o] C<br>250<br>120<br>25 [o] C 200<br>100<br>80 125 [o] C 150<br>60<br>100<br>TJ = 125 [o] C<br>40<br>50 TJ = 25 [o] C<br>20<br>0 0<br>0 20 40 60 80 100 120 140 160 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> VDS = 325V Ciss<br>8  I D = 51A 10,000<br> I G = 10mA<br>6 1,000 Coss<br>4 100<br>2 10<br>f = 1 MHz  Crss<br>0 1<br>0 20 40 60 80 100 120 140 160 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemensgf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXTK102N65X2 IXTX102N65X2** 

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Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>70 1000<br>RDS(on) Limit<br>60<br>100<br>50 25μs<br>40<br>10<br>30 100μs<br>20<br>1  TJ = 150oC 1ms<br>10  TC = 25oC<br> Single Pulse  10ms<br>DC<br>0 0.1<br>0 100 200 300 400 500 600 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br>


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Fig. 15. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_102N65X2(X8-R4T50) 6-16-15-A 

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Updated at April 27, 2026

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