IXTH96N20P

Power MOSFET, PolarFET, N Channel, 200 V, 96 A, 0.024 ohm, TO-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 600W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 200V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 96A
Drain Source On State Resistance: 0.024ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	4.32 €
Current stock	10+
Lead time	30 days

Datasheet

## **PolarHT[TM] Power MOSFET** 

**IXTH 96N20P V =   200     V DSS IXTQ 96N20P I =     96     A D25 IXTT  96N20P R ≤ 24   m Ω DS(on)** 

N-Channel Enhancement Mode Avalanche Rated 

**TO-247 (IXTH)** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**||||||
|---|---|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|200|V|G D S|(TAB)||||
|**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ|200|V||||||
|**VGSS**|Continous|±20|V|**TO-3P (IXTQ)**|||||
|**VGSM**|Transient|±30|V||||||
|**ID25**|TC = 25°C|96|A||||||
|**ID(RMS)**<br>**IDM**<br>~~a~~|External lead current limit<br>TC = 25°C, pulse width limited by TJM<br>~~a~~|75<br>225<br>~~a~~|A<br>A<br>~~a~~|G|||‘)||
|**IAR**|TC = 25°C|60|A|D S|||(TAB)||
|**EAR**|TC = 25°C|50|mJ||||||
|**EAS**|TC = 25°C|1.5|J|**TO-268 (IXTT)**|||||
|**dv/dt**<br>IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>10<br>V/ns<br>TJ ≤150°C, RG= 4Ω<br>**PD**<br>TC = 25°C<br>600<br>W<br>G<br>S<br>D (TAB)<br>~~awe~~|||||||D (TAB)||
|**TJ**||-55 ... +175|°C||||||
|**TJM**<br>**Tstg**||175<br>-55 ... +150|°C<br>°C|G = Gate<br>S = Source|D = Drain<br>TAB = Drain||||
|**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>Plastic body for 10 s|300<br>260|°C<br>°C|**Features**|||||
|**Md**|Mounting torque<br>(TO-3P, TO-247)|1.13/10|Nm/lb.in.|l International standard packages|||||
|**Weight**|TO-3P<br>TO-247<br>TO-268|5.5<br>6.0<br>5.0|g<br>g<br>g|l Unclamped Inductive Switching (UIS)<br>rated<br>l Low package inductance<br>- easy to drive and to protect|||||



## **Advantages** 

|(TC, unless otherwise specified)|||
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.    Typ.**<br>~~|~~|**Min.    Typ.**<br>~~|~~|**Max.**|
|**BVDSS**<br>VGS = 0 V, ID= 250µA<br>200<br>~~|~~|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 250µA<br>2.5<br>~~|~~|~~|_~~|5.0<br>V|
|**IGSS**<br>VGS =±20 VDC, VDS= 0|~~_~~|±100<br>nA|
|**IDSS**<br>VDS =  VDSS<br>VGS= 0 V<br>TJ= 150°C|~~=~~|25<br>µA<br>250<br>µA|
|**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, duty cycle d≤2 %||24<br>mΩ|



DS99117E(10/05) 

© 2006 IXYS All rights reserved 

**IXTH 96N20P  IXTQ 96N20P IXTT 96N20P** 

|**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|---|
||(TJ= 25°C, unless otherwise specified)|||||
|||**Min.**|**Typ.**|**Max.**||
|**gfs**|VDS= 10 V; ID= 0.5 ID25, pulse test|40|52||S|
|**Ciss**|||4800||pF|
|**Coss**|VGS= 0 V, VDS= 25 V, f = 1 MHz||1020||pF|
|**Crss**|||270||pF|
|**td(on)**|||28||ns|
|**tr**|VGS= 10 V, VDS= 0.5 VDSS, ID= ID25||30||ns|
|**td(off)**|RG= 4Ω(External)||75||ns|
|**tf**|||30||ns|
|**Qg(on)**|||145||nC|
|**Qgs**|VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||30||nC|
|**Qgd**|||80||nC|
|**RthJC**||||0.25°C/W||
|**RthCS**|(TO-3P, TO-247)||0.21||°C/W|



**Source-Drain Diode                                                                Characteristic Values** 

|||(TJ= 25°C, unless|otherwise specified)|otherwise specified)|otherwise specified)|
|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**|**Min. **|**Typ.**|**Max.**||
|**IS**|VGS= 0 V|||96|A|
|**ISM**|Repetitive|||240|A|
|**VSD**|IF= IS, VGS= 0 V,|||1.5|V|
||Pulse test, t≤300µs, duty|cycle d≤2 %||||
|**trr**|IF= 25 A,  -di/dt = 100 A/µs||160||ns|
|**QRM**|VR= 100 V,  VGS= 0 V||3.0||µC|



**==> picture [288 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
  TO-247 (IXTH) Outline Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 4.7 5.3 .185 .209<br>A1 2.2 2.54 .087 .102<br>A2 2.2 2.6 .059 .098<br>b 1.0 1.4 .040 .055<br> 1       2       3 b1 1.65 2.13 .065 .084<br>b2 2.87 3.12 .113 .123<br>C .4 .8 .016 .031<br>D 20.80 21.46 .819 .845<br>E 15.75 16.26 .610 .640<br>e 5.20 5.72 0.205 0.225<br>L 19.81 20.32 .780 .800<br>L1 4.50 .177<br>∅ P 3.55 3.65 .140 .144<br>Terminals: 1 - Gate 2 - Drain Q 5.89 6.40 0.232 0.252<br>3 - Source Tab - Drain<br>R 4.32 5.49 .170 .216<br>S 6.15 BSC 242 BSC<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

## **TO-3P (IXTQ) Outline** 

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## **TO-268 (IXTT) Outline** 

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- IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 6,710,463 6771478 B2 

**IXTH 96N20P  IXTQ 96N20P IXTT 96N20P** 

**Fig. 1. Output Characteristics @ 25ºC** 

**Fig. 2. Extended Output Characteristics @ 25ºC** 

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**----- Start of picture text -----**<br>
250<br>225 VGSGS = 10V<br>200<br>175 9V<br>150<br>125<br>8V<br>100<br>75<br>7V<br>50<br>25<br>6V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>V D S - Volts - Volts<br> - Amperes<br>D<br>I D<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100 250<br>90 VGS = 10V 225 VGSGS = 10V<br>          9V<br>80 200<br>70 175 9V<br>60 150<br>8V<br>50 125 8V<br>40 100<br>30 7V 75<br>7V<br>20 50<br>10 6V 25 6V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 14 16 18 20<br>V D S - Volts V D S - Volts - Volts<br>Fig. 3. Output Characteristics  Fig. 4. RDS(on) Norm alized to 0.5 ID25<br>@ 150ºC Value vs. Junction Tem perature<br>100 3<br>90 V          9VGS = 10V 2.8 V GS  = 10V<br>2.6<br>80<br>2.4<br>70<br>8V 2.2<br>60<br>2<br>I D = 96A<br>50 1.8<br>7V<br>40 1.6 I D  = 48A<br>1.4<br>30<br>6V 1.2<br>20<br>1<br>10<br>5V 0.8<br>0 0.6<br>0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150 175<br>V D S - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Norm alized to  Fig. 6. Drain Current vs. Case<br>0.5 ID25 Value vs. ID Tem perature<br>4.3 90<br>4 External Lead Current Limit<br>VGS = 10V 80<br>3.7<br>70<br>3.4<br>TJ = 175ºC<br>3.1 60<br>2.8<br>50<br>2.5<br>40<br>2.2<br>1.9 TJ = 125ºC 30<br>1.6<br>20<br>1.3<br>10<br>1 T J  = 25ºC<br>0.7 0<br>0 25 50 75 100 125 150 175 200 225 250 -50 -25 0 25 50 75 100 125 150 175<br>I D - Amperes TC - Degrees Centigrade<br> - Amperes  - Amperes<br>I D I D<br>  - Normalized<br> - Amperes<br>D<br>I<br>D S ( o n )<br>R<br>  - Normalized<br> - Amperes<br>D<br>I<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**IXTH 96N20P  IXTQ 96N20P IXTT 96N20P** 

**Fig. 7. Input Adm ittance** 

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**----- Start of picture text -----**<br>
160<br>140<br>120<br>100<br>80<br>60<br> TJ = 150ºC<br>40          25ºC<br>        -40ºC<br>20<br>0<br>4.5 5 5.5 6 6.5 7 7.5 8 8.5 9<br>V G S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**==> picture [232 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4 1.6<br>V S D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

**==> picture [231 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>TJ = -40ºC<br>70        25ºC<br>     150ºC<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175 200<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 100V<br>8 I D = 48A<br>I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 15 30 45 60 75 90 105 120 135 150<br>Q G - nanoCoulombs<br>  - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [232 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>f  = 1MHz<br>Ciss<br>1000<br>Coss<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>V DS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


**Fig. 12. Forw ard-Bias Safe Operating Area** 

**==> picture [234 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>R  Limit TJ = 175ºC<br>DS(on) TC = 25ºC<br>25µs<br>100<br>100µs<br>1ms<br>10ms<br>10<br>DC<br>1<br>10 100 1000<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**IXTH 96N20P  IXTQ 96N20P IXTT 96N20P** 

**Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e** 

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**----- Start of picture text -----**<br>
1 . 0 0<br>0 . 1 0<br>0 . 0 1<br>1 1 0 1 0 0 1 0 0 0<br>Pu ls e  W id th  - millis e c o n d s<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

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Updated at April 27, 2026

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