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IXTH80N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 80 A, 0.038 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 890W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 80A
- Drain Source On State Resistance: 0.038ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 7.46 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **X2-Class Power MOSFET** ## **IXTH80N65X2** **V = 650V DSS I = 80A D25 R 38m DS(on)** N-Channel Enhancement Mode Avalanche Rated |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25C to 150C|650|V| |**VDGR**|TJ = 25C to 150C, RGS= 1M|650|V| |**VGSS**|Continuous|30|V| |**VGSM**|Transient|40|V| |**ID25**|TC = 25C|80|A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|160|A| |**IA**|TC = 25C|10|A| |**EAS**|TC = 25C|3|J| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 15 V/ns|150°C 15 V/ns|150°C 15 V/ns| |**PD**|TC = 25C|890|W| |**TJ**||-55 ... +150|C| |**TJM**||150|C| |**Tstg**||-55 ... +150|C| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C| |**Md**|Mounting Torque 1.13 / 10|Mounting Torque 1.13 / 10|Nm/lb.in| |**Weight**|**Weight**6 g|6 g|6 g| **==> picture [113 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247<br>G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** - International Standard Package - Low RDS(ON) and QG Avalanche Rated Low Package Inductance ## **Advantages** - High Power Density - Easy to Mount Space Savings ## **Applications** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>650<br>~~|~~|~~||~~<br>~~||~~|V| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.7 5.0 V<br>~~|~~<br>~~|~~|5.0 V<br>~~||~~<br>~~||~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~| |~~<br>~~||~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>400 μA<br>~~|~~|25<br>400 μA<br>~~| |—~~|25A<br>400 μA| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1||38 m| - Switch-Mode and Resonant-Mode - Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls DS100674B(4/18) © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTH80N65X2** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max**<br>~~ri~~|**Min. Typ. Max**<br>~~ri~~|**Min. Typ. Max**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 36 72 S<br>~~ri~~|, Note 1 36 72 S<br>~~ri~~<br>~~—~~|, Note 1 36 72 S| |**RGi**<br>Gate Input Resistance<br>0.7|0.7<br>~~—~~|| |**Ciss**<br>7800<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>5600<br>**Crss**<br>10|7800<br>5600<br>10<br>~~—~~|pF<br>pF<br>pF| |**Co(er)**<br>267<br>**Co(tr)**<br>1160<br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|267<br>1160|pF<br>pF| |**td(on)**<br>36<br>**tr**<br>11<br>**td(off)**<br>72<br>**tf**<br>7<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2(External)|36<br>11<br>72<br>7|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>137<br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br>37<br>**Qgd**<br>46|137<br>37<br>46|nC<br>nC<br>nC| |**RthJC**<br>0.14<br>**RthCS**<br>0.21|0.14<br>0.21|0.14C/W<br>0.21C/W| **==> picture [145 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 (IXTH) Outline<br>D A<br> A2 A2 A E B 0P O 0K M D B M+<br>Ts p— —+ E Q S ftom<br>R + S D2 +<br>D rPOL! ? JS D1<br>0P1<br>4<br>1 2 3 ixys option<br> L1<br>C<br> E1<br>L<br> A1 b<br>c b2<br>Ee b4 e PINS: 1 - Gate<br>[Olt O J M C A M+ oO ] 2, 4 - Drain ]<br> 3 - Source<br>**----- End of picture text -----**<br> ## **Source-Drain Diode** |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**| |---|---|---| |**IS**<br>VGS= 0V|80 A|80 A| |**ISM**<br>Repetitive, pulse Width Limited by TJM|320 A|320 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1|1.4 V|1.4 V| |**trr**<br>465<br>**QRM**<br>10<br>**IRM**<br>43<br>IF= 40A, -di/dt = 100A/μs<br>VR= 100V|465<br>10<br>43|ns<br>μC<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 ## **IXTH80N65X2** **==> picture [263 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>80<br>VGS = 10V<br>70 8V<br>7V<br>60<br>50<br>40 6V<br>30<br>20<br>10<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [263 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>250<br>VGS = 10V<br> 9V<br>200<br>8V<br>150<br>7V<br>100<br>6V<br>50<br>5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 40A Value vs. DS(on) Normalized to ID = 40A Value vs. Normalized to ID = 40A Value vs. D = 40A Value vs. = 40A Value vs.<br>Junction Temperature<br>3.4<br>3.0 VGSGS = 10V 10V<br>2.6<br>2.2<br>I D = 80A D = 80A = 80A<br>1.8<br>I D = 40A D = 40A = 40A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [532 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 40A Value vs. DS(on) Normalized to ID = 40A Value vs. Normalized to ID = 40A Value vs. D = 40A Value vs. = 40A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>80 3.4<br>VGS = 10V<br>70 7V 3.0 VGSGS = 10V 10V<br>60 2.6<br>6V<br>50 2.2<br>I D = 80A D = 80A = 80A<br>40 1.8<br>I D = 40A D = 40A = 40A<br>30 1.4<br>20 5V 1.0<br>10 0.6<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>VGS = 10V<br>4.0 1.2<br>TJ = 125 [o] C<br>3.5 1.1 BVDSS<br>3.0 1.0<br>2.5 0.9<br>2.0 0.8<br>T J = 25 [o] C V GS(th)<br>1.5 0.7<br>1.0 0.6<br>0.5 0.5<br>0 20 40 60 80 100 120 140 160 180 200 220 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTH80N65X2** **==> picture [263 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maximum Drain Current vs. Case Temperature<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [262 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Input Admittance<br>140<br>120<br>100<br>80 TJ = 125 [o] C<br> 25 [o] C<br> - 40 [o] C<br>60<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 9. Transconductance** **Fig. 10. Forward Voltage Drop of Intrinsic Diode** **==> picture [527 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> 140 200<br>TJ = - 40 [o] C 180<br>120<br>160<br>100 140<br>25 [o] C<br>120<br>80<br>125 [o] C<br>100<br>60<br>80<br>TJ = 125 [o] C<br>40 60<br>40 TJ = 25 [o] C<br>20<br>20<br>0 0<br>0 20 40 60 80 100 120 140 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> VDS = 325V<br> I D = 40A<br>8 10,000<br> I G = 10mA Ciss<br>6 1,000<br>Coss<br>4 100<br>2 10<br>f = 1 MHz Crss<br>0 1<br>0 20 40 60 80 100 120 140 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTH80N65X2** **Fig. 13. Output Capacitance Stored Energy** **Fig. 14. Forward-Bias Safe Operating Area** **==> picture [538 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> 55 1000<br>50<br>RDS(on) Limit<br>45<br>100<br>40 25μs<br>35<br>30<br>10 100μs<br>25<br>20<br>15<br>1<br> TJ = 150 [o] C<br>10<br> TC = 25 [o] C 1ms<br>5 Single Pulse<br>0 Fig. 15. Maximum Transient T 0.1 hermal Impedance<br>1 0 100 200 300 400 500 600 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>aaaaa<br>0.3<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - MicroJoules - Amperes<br>OSS ID<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_80N65X2 (Z8-S602) 10-09-15 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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