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IXTH62N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 62 A, 0.05 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 780W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 62A
- Drain Source On State Resistance: 0.05ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.19 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **X2-Class Power MOSFET** ## **IXTH62N65X2** **V = 650V DSS I = 62A D25 R 50m DS(on)** N-Channel Enhancement Mode Avalanche Rated |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25C to 150C|650|V| |**VDGR**|TJ = 25C to 150C, RGS= 1M|650|V| |**VGSS**|Continuous|30|V| |**VGSM**|Transient|40|V| |**ID25**|TC = 25C|62|A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|124|A| |**IA**|TC = 25C<br>10|10|A| |**EAS**|TC = 25C|2|J| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 15 V/ns|150°C 15 V/ns|150°C 15 V/ns| |**PD**|TC = 25C|780|W| |**TJ**||-55 ... +150|C| |**TJM**||150|C| |**Tstg**||-55 ... +150|C| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C| |**Md**|Mounting Torque 1.13 / 10|Mounting Torque 1.13 / 10|Nm/lb.in| |**Weight**|**Weight**6 g|6 g|6 g| - **TO-247** G D S D (Tab) - G = Gate D = Drain S = Source Tab = Drain ## **Features** - International Standard Package - Low RDS(ON) and QG Avalanche Rated Low Package Inductance ## **Advantages** - High Power Density - Easy to Mount Space Savings ## **Applications** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>650<br>~~|~~|~~||~~<br>~~||~~|V| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.7 5.0 V<br>~~|~~<br>~~|~~|5.0 V<br>~~||~~<br>~~||~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~| |~~<br>~~||~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>300<br>~~|~~|25<br>300<br>~~| |—~~|25A<br>300A| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1||50 m| - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100679B(4/18) © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTH62N65X2** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max**<br>~~ri~~|**Min. Typ. Max**<br>~~ri~~|**Min. Typ. Max**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 25 56 S<br>~~ri~~|, Note 1 25 56 S<br>~~ri~~<br>~~—~~|, Note 1 25 56 S| |**RGi**<br>Gate Input Resistance<br>0.9|0.9<br>~~—~~|| |**Ciss**<br>5800<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>4260<br>**Crss**<br>2.3|5800<br>4260<br>2.3<br>~~—~~|pF<br>pF<br>pF| |**Co(er)**<br>210<br>**Co(tr)**<br>890 pF<br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|210<br>890 pF|pF<br>890 pF| |**td(on)**<br>28<br>**tr**<br>11<br>**td(off)**<br>56<br>**tf**<br>5<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2(External)|28<br>11<br>56<br>5|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>100<br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br>28<br>**Qgd**<br>35|100<br>28<br>35|nC<br>nC<br>nC| |**RthJC**<br>0.16<br>**RthCS**<br>0.21|0.16<br>0.21|0.16C/W<br>0.21C/W| **==> picture [145 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 (IXTH) Outline<br>D A<br> A2 A2 A E B 0P O 0K M D B M+<br>Ts p— —+ E Q S ftom<br>R + S D2 +<br>D rPOL! ? JS D1<br>0P1<br>4<br>1 2 3 ixys option<br> L1<br>C<br> E1<br>L<br> A1 b<br>c b2<br>Ee b4 e PINS: 1 - Gate<br>[Olt O J M C A M+ oO ] 2, 4 - Drain ]<br> 3 - Source<br>**----- End of picture text -----**<br> |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**| |---|---|---| |**IS**<br>VGS= 0V|62 A|62 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM|248 A|248 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1|1.4 V|1.4 V| |**trr**<br>445<br>**QRM**<br>8.2<br>**IRM**<br>36.7<br>IF= 31A, -di/dt = 100A/μs<br>VR= 100V|445<br>8.2<br>36.7|ns<br>μC<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 ## **IXTH62N65X2** **==> picture [538 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>180<br>60 VGS = 10V VGS = 10V<br> 8V 160<br>50 7V 140 8V<br>120<br>40<br>7V<br>100<br>30 6V 80<br>60<br>20<br>6V<br>40<br>10<br>20<br>5V<br>5V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **==> picture [532 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 31A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>3.8<br>60 VGS = 10V<br> 7V 3.4 VGS = 10V<br>50 3.0<br>6V<br>2.6 I D = 62A<br>40<br>2.2<br>30 1.8 I D = 31A<br>1.4<br>20<br>5V 1.0<br>10<br>0.6<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 31A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.0 1.2<br>VGS = 10V<br>3.5<br>T J = 125 [o] C 1.1 BV DSS<br>3.0<br>1.0<br>2.5<br>0.9<br>2.0<br>TJ = 25 [o] C 0.8<br>1.5<br>VGS(th)<br>0.7<br>1.0<br>0.5 0.6<br>0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTH62N65X2** **==> picture [530 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>70 90<br>80<br>60<br>70<br>50<br>60<br>40 50 T J = 125 [o] C<br> 25 [o] C<br> - 40 [o] C<br>30 40<br>30<br>20<br>20<br>10<br>10<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **Fig. 9. Transconductance** **==> picture [253 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T J = - 40 [o] C<br>90<br>80<br>70 25 [o] C<br>60<br>125 [o] C<br>50<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80 90<br>ID - Amperes<br>Fig. 11. Gate Charge<br>10<br> VDS = 325V<br> I D = 31A<br>8<br> I G = 10mA<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 10. Forward Voltage Drop of Intrinsic Diode** **==> picture [253 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180<br>160<br>140<br>120<br>100<br>80<br>TJ = 125 [o] C<br>60<br>TJ = 25 [o] C<br>40<br>20<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 12. Capacitance** **==> picture [261 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>10,000<br>Ciss<br>1,000<br>100 Coss<br>10<br>f = 1 MHz Crss<br>1<br>1 10 100 1000<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTH62N65X2** **==> picture [538 x 438] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>45 1000<br>40 RDS(on) Limit<br>35<br>100<br>25μs<br>30<br>100μs<br>25<br>10<br>20<br>15 1ms<br>1<br>10 TJ = 150 [o] C<br>10ms<br> TC = 25 [o] C<br>5 Single Pulse<br>0 0.1<br>0 100 200 300 400 500 600 10 100 1,000<br>VDS - Volts Fig. 15. Maximum Transient Thermal Impedance VDS - Volts<br>1<br>Fig. 15. Maximum Transient Thermal Impedance<br>aaaa<br>0.4<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - MicroJoules - Amperes<br>ID<br>OSS<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_62N65X2(X7-S602) 10-08-15 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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