IXTH40N50L2

Power MOSFET, LINEAR L2™, N Channel, 500 V, 40 A, 0.17 ohm, TO-247, Through Hole

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power D
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 540W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 500V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 40A
Drain Source On State Resistance: 0.17ohm
Gate Source Threshold Voltage Max: 2.5V

Delivery and price
Units per pack	300
Price	18.44 €
Current stock	10+
Lead time	30 days

Datasheet

## **LinearL2[[TM]]** 

## **LinearL2[[TM]] IXTT40N50L2 Power MOSFET IXTQ40N50L2 w/Extended FBSOA IXTH40N50L2** 

N-Channel Enhancement Mode Avalanche rated 

|**Symbol**<br>**Test Conditions**<br>**VDSS**<br>TJ = 25C to 150C<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>**VGSS**<br>Continuous<br>~~—~~|**Symbol**<br>**Test Conditions**<br>**VDSS**<br>TJ = 25C to 150C<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>**VGSS**<br>Continuous<br>~~—~~|**Maximum Ratings**<br>500                    V<br>500                          V<br>20                       V|**Maximum Ratings**<br>500                    V<br>500                          V<br>20                       V|**Maximum Ratings**<br>500                    V<br>500                          V<br>20                       V|**Maximum Ratings**<br>500                    V<br>500                          V<br>20                       V|500                    V<br>500                          V<br>20                       V|
|---|---|---|---|---|---|---|
|**VGSM**|Transient||30                            V||30                            V|30                            V|
|**ID25**|TC = 25C<br>40|40|40|40||A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM80|80|80|80||A|
|**IA**|TC = 25C<br>40|40|40|40||A|
|**EAS**|TC = 25C|2|2|2||J|
|**PD**|TC = 25C                                                                   540|C                                                                   540|C                                                                   540|||W|
|**TJ**|-55 to +150|-55 to +150|-55 to +150||-55 to +150|-55 to +150C|
|**TJM**|+150|+150|+150||+150|+150C|
|**Tstg**-55 to +150|-55 to +150|-55 to +150|-55 to +150|||C|
|**TL**|Maximum Lead Temperature for Soldering                 300|Maximum Lead Temperature for Soldering                 300|Maximum Lead Temperature for Soldering                 300|||°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                           260|1.6 mm (0.062in.) from Case for 10s                           260|1.6 mm (0.062in.) from Case for 10s                           260|||°C|
|**Md**|Mounting Torque  (TO-247&TO-3P)                      1.13/10             Nm/lb.in|Mounting Torque  (TO-247&TO-3P)                      1.13/10             Nm/lb.in|||Mounting Torque  (TO-247&TO-3P)                      1.13/10             Nm/lb.in||
|**Weight**|TO-268                                                                        4.0                         g|TO-268                                                                        4.0                         g|TO-268                                                                        4.0                         g||TO-268                                                                        4.0                         g|TO-268                                                                        4.0                         g|
||TO-3P                                                                           5.5                         g|TO-3P                                                                           5.5                         g|TO-3P                                                                           5.5                         g||TO-3P                                                                           5.5                         g|TO-3P                                                                           5.5                         g|
||TO-247                                                                            6.0                          g|TO-247                                                                            6.0                          g|TO-247                                                                            6.0                          g||TO-247                                                                            6.0                          g|TO-247                                                                            6.0                          g|
|**Symbol**|**Test Conditions**<br>**Characteristic Values**|**Characteristic Values**|||||
|(TJ= 25C, Unless Otherwise Specified)|C, Unless Otherwise Specified)<br>**Min.      Typ.       Max.**|**Min.      Typ.       Max.**||**Min.      Typ.       Max.**|**Min.      Typ.       Max.**||
|**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**<br>**RDS(on)**|VGS = 0V, ID= 1mA<br>500<br>VDS = VGS, ID= 250A<br>2.5<br>VGS =20V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>VGS= 10V, ID= 0.5 • ID25, Note 1|500<br>2.5|4.5<br>100<br>50<br>300<br>170   m<br>~~| |~~<br>~~| |~~~<br>~~||~~|||V<br>V<br>nA<br>50A<br>300A<br>170   m|



**V =   500V DSS I =   40A D25 R  170m  DS(on)** 

## **TO-268 (IXTT)** 

**==> picture [121 x 251] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>S<br>D (Tab)<br>TO-3P (IXTQ)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXTH)<br>G<br>D<br>S D (Tab)<br>G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- Designed for Linear Operation 

- International Standard Packages  Avalanche Rated 

- Molding Epoxies Meet UL 94 V-0 Flammability Classification 

- Guaranteed FBSOA at 75C 

## **Applications** 

- Solid State Circuit Breakers 

- Soft Start Controls 

- Linear Amplifiers 

- Programmable Loads  Current Regulators 

© 2017 IXYS CORPORATION, All rights reserved 

DS100100B(6/17) 

## **IXTT40N50L2     IXTQ40N50L2 IXTH40N50L2** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS = 10V, ID= 0.5 • ID25, Note 1                       11|15|19<br>S|
|**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|10.4<br>655<br>155|nF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2(External)|50<br>133<br>127<br>44|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|320<br>64<br>198|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>(TO-247&TO-3P)<br>|<br>0.25|0.23 C/W<br>C/W|



## **Safe Operating Area Specification** 

|**Safe Operating Area Specification**|||
|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Min.**|**Typ.**|**Max.**|
|**SOA**<br>VDS= 400V, ID= 0.8A, TC= 75°C, tp = 3s 320||W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS = 0V||40<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||160<br>A|
|**VSD**<br>IF= IS, VGS= 0V,  Note 1||1.5<br>V|
|**trr**<br>IF= IS, -di/dt = 100A/μs, VR= 100V|500|ns|



Note 1:  Pulse test, t  300s, duty cycle, d 2%. 

IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXTT40N50L2    IXTQ40N50L2 IXTH40N50L2** 

**==> picture [538 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>40 100<br>VGS = 20V VGS = 20V<br>35          12V 12V<br>         10V   9V 80<br>10V<br>30<br>25<br>8V 60<br>20<br>9V<br>40<br>15<br>7V 8V<br>10<br>20<br>5 6V 7V<br>5V 6V<br>0 0 5V<br>0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature** 

**==> picture [253 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>40<br>VGSGS = 20V<br>35          12V<br>         10V<br>        9V<br>30<br>8V<br>25<br>20<br>7V<br>15<br>10<br>6V<br>5<br>5V<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS - VoltsDS - Volts - Volts<br> - Amperes<br>IDD<br>**----- End of picture text -----**<br>


**==> picture [534 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 2.8<br>VGSGS = 20V<br>35          12V V GS = 10V<br>         10V 2.4<br>        9V<br>30<br>8V 2.0 I D = 40A<br>25<br>I D = 20A<br>20 1.6<br>7V<br>15<br>1.2<br>10<br>6V<br>0.8<br>5<br>5V<br>0 0.4<br>0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150<br>VDS - VoltsDS - Volts - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>45<br>2.8 VGS = 10V  TJ = 125 [o] C 40<br>35<br>2.4<br>30<br>2.0 25<br>20<br>1.6 TJ = 25 [o] C<br>15<br>10<br>1.2<br>5<br>0.8 0<br>0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>IDD<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION, All rights reserved 

## **IXTT40N50L2     IXTQ40N50L2 IXTH40N50L2** 

**==> picture [260 x 427] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>70<br>60<br>50<br>TJ = 125 [o] C<br>40<br>          25 [o] C<br>        - 40 [o] C<br>30<br>20<br>10<br>0<br>3 4 5 6 7 8 9 10<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>120<br>100<br>80<br>60<br>40 TJ = 125 [o] C<br>20 TJ = 25 [o] C<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**==> picture [260 x 423] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>36<br>TJ = - 40 [o] C<br>30<br>25 [o] C<br>24 125 [o] C<br>18<br>12<br>6<br>0<br>0 10 20 30 40 50 60 70<br>ID - Amperes<br>Fig. 10. Gate Charge<br>16<br> VDS = 250V<br>14<br> I D = 20A<br>12  I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300 350 400 450<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [525 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000 1<br>f = 1 MHz<br>10,000 0.1<br>Ciss<br>Coss<br>1,000 0.01<br>Crss<br>100 0.001<br>0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

## **IXTT40N50L2    IXTQ40N50L2 IXTH40N50L2** 

## **Fig. 13. Forward-Bias Safe Operating Area @ TC = 25[o] C** 

## **Fig. 14. Forward-Bias Safe Operating Area @ TC = 75[o] C** 

**==> picture [528 x 223] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>RDS(on) Limit RDS(on) Limit<br>25μs<br>25μs<br>100μs<br>100μs<br>10 10<br>1ms<br>1ms<br>10ms<br>10ms<br>100ms<br>1 1<br>DC 100ms<br>DC<br>TJ = 150 [o] C T J = 150 [o] C<br>T C = 25 [o] C    TC  = 75 [o] C<br>Single Pulse  Single Pulse<br>0.1 0.1<br>10 100 1000 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**==> picture [512 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-268 Outline TO-3P Outline   TO-247 Outline<br>D A<br>E AA2  0P0P1 E 1  A2  A2 A E B  0P O 0K M  D B M+<br>} LE i - 4 1 _ + + . i! S “IX 1 IN + . tF> +Toe R   + q-§S Q i S ,/  D2 eaeUZo09)   +<br>2Oon D  D1 rr D | OE E 0P1 | © |  D1<br>i J a 4 J ! ; 1 2 3 t 4 1 2 3 ixys option H tdt | 4 i |<br> L1<br>a t ' -| Le es a  L1 A 1 T pi ] C ]<br> E1<br>L<br>~ ~ 1 f _4¢— 5h ! { \ eT | vow VW<br> A1 b<br>Terminals: 1 - Gate3 - Source 2,4  - Drain uk “\ YLa a e U a e b2 yb P U  b4  b i  c beJ UU E c Y\  b2 \ _[L Fall  b4O  J  M  C  A M+ ick Oro} e PINS:  1 - Gate           2, 4 - Drain<br>           3 - Source<br>PINS:  1 - G ate<br> 2,  4  - Drain<br> 3 - So ur c e ; INCHES MILLIMETERS<br>**----- End of picture text -----**<br>


**==> picture [65 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-268 Outline<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION, All rights reserved 

IXYS REF: T_40N50L2(8R)6-16-17-B 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Updated at April 27, 2026

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

Learn more →

Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

Request a quote →

Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

BOM Analysis service →