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IXTH40N30
Power MOSFET, N Channel, 300 V, 40 A, 0.085 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 300W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.085ohm
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 300V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 0.085ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 7.11 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **MegaMOS[TM] FET** |||**VDSS**|**ID25**|**RDS(on)**| |---|---|---|---|---| |**IXTH 35N30**|**IXTH 35N30**|**300 V**|**35 A**|**0.10 Ω**| |**IXTH 40N30**|**IXTH 40N30**|**300 V**|**40 A**|**0.085Ω**| |**IXTM 40N30**|**IXTM 40N30**|**300 V**|**40 A**|**0.088Ω**| ## N-Channel Enhancement Mode **Symbol Test Conditions Maximum Ratings VDSS** TJ = 25°C to 150°C 300 V **VDGR** TJ = 25°C to 150°C; RGS = 1 MΩ 300 V **VGS** Continuous ±20 V **VGSM** Transient ±30 V **ID25** TC = 25°C 35N30 35 A 40N30 40 A **IDM** TC = 25°C, pulse width limited by TJM 35N30 140 A 40N30 160 A a **PD** TC = 25°C 300 W **T J** -55 ... +150 °C **TJM** 150 °C **T** -55 ... +150 °C **stg M d** Mounting torque 1.13/10 Nm/lb.in. **Weight** TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s ## **TO-247 AD (IXTH)** ## **TO-204 AE (IXTM)** **==> picture [109 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D<br>G = Gate, D = Drain,<br>S = Source, TAB = Drain<br>**----- End of picture text -----**<br> ## **Features** **==> picture [28 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> D (TAB)<br>**----- End of picture text -----**<br> - l International standard packages - l Low RDS (on) HDMOS[TM] process - l Rugged polysilicon gate cell structure - l Low package inductance (< 5 nH) - easy to drive and to protect - l Fast switching times |**VDSS**<br>VGS = 0 V, ID= 250µA<br>300<br>**VGS(th)**<br>VDS = VGS, ID= 250µA<br>2||V<br>4<br>V| |---|---|---| |**IGSS**<br>VGS =±20 VDC, VDS= 0||±100<br>nA| |**IDSS**<br>VDS = 0.8 • VDSS<br>TJ= 25°C<br>VGS = 0 V<br>TJ= 125°C||200<br>µA<br>1<br>mA| |**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>IXTH35N30<br>IXTH40N30<br>IXTM40N30<br>Pulse test, t≤300µs, duty cycle d≤2 %||0.10<br>Ω<br>0.085<br>Ω<br>0.088<br>Ω| ## **Applications** - l Switch-mode and resonant-mode power supplies - l Motor controls - l Uninterruptible Power Supplies (UPS) l DC choppers ## **Advantages** - l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) - l Space savings - l High power density IXYS reserves the right to change limits, test conditions, and dimensions. 91535E(5/96) © 2000 IXYS All rights reserved 1 - 4 **IXTH 35N30 IXTH 40N30 IXTM 40N30** ## **Symbol Test Conditions** ## **Characteristic Values** ## **TO-247 AD (IXTH) Outline** (TJ = 25°C, unless otherwise specified) **min. typ. max.** |(TJ= 25°C, unless o<br>**min.**|therwi<br>**typ.**|se specified)<br>**max.**|se specified)<br>**max.**|se specified)<br>**max.**|se specified)<br>**max.**| |---|---|---|---|---|---| |**g**<br>V= 10 V; I= 05 • Ipulse test<br>22|25|S|||| |**fs**<br>DS D.D25,<br><br>**Ciss**<br>**Coss**<br>VGS<br>= 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**|4600<br>650<br>240|pF<br>pF<br>pF||Dim.<br><br>M<br>A<br><br>A1<br><br>A2<br><br>b<br><br>b1<br>1.<br>b2<br>2.<br>C<br>D<br>20.<br>E<br>15.<br>e<br>5.<br>L<br>19.<br>L1<br>∅P<br>3.<br>Q<br>5.<br>R<br>4.<br>S<br>6.<br>Terminals: 1 - G<br>3 - S<br>|ate<br>2 - Drain<br>ource<br>Tab - Drain<br>1 2 3| |**td(on)**<br>**tr**<br>VGS<br>= 10 V, VDS= 0.5 • VDSS, ID= 0.5 ID25<br>**td(off)**<br>RG= 2Ω,(External)<br>**tf**|24<br>40<br>75<br>40|30<br>ns<br>90<br>ns<br>100<br>ns<br>90<br>ns|||| ||||||Millimeter<br>Inches<br>in.<br>Max.<br>Min.<br>Max.| |**Qg(on)**<br>**Qgs**<br>VGS<br>= 10 V, VDS= 0.5 • VDSS, ID= 0.5 ID25<br>**Qgd**|190<br>28<br>85|220<br>nC<br>50<br>nC<br>105<br>nC|||| ||||||4.7<br>5.3<br>.185<br>.209<br>2.2<br>2.54<br>.087<br>.102<br>2.2<br>2.6<br>.059<br>.098| ||||||1.0<br>1.4<br>.040<br>.055<br>65<br>2.13<br>.065<br>.084<br>87<br>3.12<br>.113<br>.123| |**RthJC**<br>**RthCK**|0.25|0.42<br>K/W<br>K/W|||| ||||||.4<br>.8<br>.016<br>.031<br>80<br>21.46<br>.819<br>.845<br>75<br>16.26<br>.610<br>.640| ||||||| ||||||20<br>5.72<br>0.205 0.225<br>81<br>20.32<br>.780<br>.800<br>4.50<br>.177| |**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**min.**<br>**typ.**<br>**max.**|||||| ||||||55<br>3.65<br>.140<br>.144<br>89<br>6.40<br>0.232 0.252| ||||||32<br>5.49<br>.170<br>.216<br>15 BSC<br>242 BSC| |<br>|||||| |**IS**<br>VGS = 0 V<br>35N30<br>40N30||35<br>A<br>40<br>A|||| |**ISM**<br>Repetitive;<br>35N30<br>pulse width limited by TJM<br>40N30||140<br>A<br>160<br>A|||| |**VSD**<br>IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %||1.5<br>V|||| |**trr**<br>IF= IS, -di/dt = 100 A/µs, VR= 100 V|400|ns|||| |**Source-Drain**|**Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---| |||(TJ= 25°C, unless otherwise specified)|||| |**Symbol**|**Test Conditions**|**min.**|**typ.**|**max.**|| |**IS**|VGS = 0 V|35N30||35|A| |||40N30||40|A| |**ISM**|Repetitive;|35N30||140|A| ||pulse width limited by TJM|40N30||160|A| |**VSD**|IF= IS, VGS= 0 V,|||1.5|V| ||Pulse test, t≤300µs, duty cycle d≤2 %||||| |**trr**|IF= IS, -di/dt = 100 A/µs, VR= 100 V||400||ns| **TO-204AE (IXTM) Outline** |Pins|Pins|1 - Gate|1 - Gate|2 - Source|2 - Source| |---|---|---|---|---|---| |||Case - Drain|||| ||Dim.|Millimeter||Inches|| |||Min.|Max.|Min.|Max.| ||A|6.4|11.4|.250|.450| ||A1|1.53|3.42|.060|.135| ||∅b|1.45|1.60|.057|.063| ||∅D||22.22||.875| ||e|10.67|11.17|.420|.440| ||e1|5.21|5.71|.205|.225| ||L|11.18|12.19|.440|.480| ||∅p|3.84|4.19|.151|.165| ||∅p1 3.84||4.19|.151|.165| ||q|30.15 BSC||1.187|BSC| ||R|12.58|13.33|.495|.525| ||R1|3.33|4.77|.131|.188| ||s|16.64|17.14|.655|.675| IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 © 2000 IXYS All rights reserved 2 - 4 **IXTH 35N30 IXTH 40N30 IXTM 40N30** Fig. 1 Output Characteristics **==> picture [216 x 604] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>VGS = 10V 8V<br>7V<br>70<br>TJ = 25°C<br>60<br>50<br>6V<br>40<br>30<br>20<br>5V<br>10<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br>Fig. 3 RDS(on) vs. Drain Current<br>2.0<br>TJ = 25°C<br>1.8<br>1.6<br>1.4<br>VGS = 10V<br>1.2<br>VGS = 15V<br>1.0<br>0.8<br>0.6<br>0 20 40 60 80 100 120<br>ID - Amperes<br>Fig. 5 Drain Current vs.<br>Case Temperature<br>50<br>40N30<br>40<br>35N30<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees C<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [231 x 624] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2 Input Admittance<br>80<br>70<br>60<br>50<br>TJ = 25°C<br>40<br>30<br>20<br>10<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS - Volts<br>Fig. 4 Temperature Dependence<br>of Drain to Source Resistance<br>2.50<br>2.25<br>2.00<br>1.75<br>1.50<br>ID = 20A<br>1.25<br>1.00<br>0.75<br>0.50<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br>Fig. 6 Temperature Dependence of<br>Breakdown and Threshold Voltage<br>1.2<br>VGS(th) BVDSS<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br> - Normalized<br>G(th)<br>BV/V<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 3 - 4 **IXTH 35N30 IXTH 40N30 IXTM 40N30** Fig.7 Gate Charge Characteristic Curve **==> picture [212 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>VDS = 150V<br>8 ID = 21A<br>IG = 10mA<br>6<br>4<br>2<br>0<br>0 25 50 75 100 125 150 175 200<br>Gate Charge - nCoulombs<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br> ## Fig.9 Capacitance Curves **==> picture [215 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 4500 Ciss<br>4000<br>3500<br>f = 1 MHz<br>3000<br>VDS = 25V<br>2500<br>2000<br>1500<br>1000 Coss<br>500 Crss<br>0<br>0 5 10 15 20 25<br>Vds - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br> ## Fig.8 Forward Bias Safe Operating Area **==> picture [235 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 10µs<br>100 Limited by RDS(on)<br>100µs<br>1ms<br>10<br>10ms<br>100ms<br>1<br>1 10 100 300<br>VDS - Volts<br>Fig.10 Source Current vs. Source<br>to Drain Voltage<br>80<br>70<br>60<br>50<br>40<br>TJ = 125°C<br>30<br>TJ = 25°C<br>20<br>10<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig.11 Transient Thermal Impedance **==> picture [481 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D=0.5<br>0.1<br>D=0.2<br>D=0.1<br>D=0.05<br>0.01 D=0.02<br>D=0.01<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Time - Seconds<br>Thermal Response - K/W<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 4 - 4
Updated at February 9, 2023
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