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IXTH30N50L2
Power MOSFET, LINEAR L2™, N Channel, 500 V, 30 A, 0.2 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Di
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 400W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 30A
- Drain Source On State Resistance: 0.2ohm
- Gate Source Threshold Voltage Max: 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 17.55 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **LinearL2[[TM]]** ## **LinearL2[[TM]] IXTH30N50L2 Power MOSFET IXTQ30N50L2 w/ Extended FBSOA IXTT30N50L2** **V = 500V DSS I = 30A D25 R 215m DS(on)** **==> picture [224 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>O DD TO-268 (IXTT)<br>G O R ww Gi G<br>O S<br>S D (Tab)<br>TO-3P (IXTQ)<br>gs<br>500 V<br>500 V<br>G<br> 20 V D<br> 30 V S<br>D (Tab)<br>A<br>60 A TO-247 (IXTH)<br>30 A<br>1.5 J<br>400 W<br>G<br>C D S D (Tab)<br>**----- End of picture text -----**<br> N-Channel Enhancement Mode |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratin**|**Maximum Ratingss**|| |---|---|---|---|---|---| |**VDSS**<br>TJ = 25C to 150C<br>500<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>500<br>V<br>~~a~~|||||| |**VGSS**<br>**VGSM**|Continuous<br>Transient|| 2020<br> 3030||V<br>V| |**ID25**|TC = 25C<br>30|30|30||A| |**IDM**|TC = 25C, Pulse Width Limited by TJM||60||A| |**IA**|TC = 25C||30||A| |**EAS**|TC = 25C||1.5||J| |**PD**|TC = 25C||400||W| |**TJ**||-55 ... +150|-55 ... +150|CC|| |**TJM**|||150|C|| |**Tstg**||-55 ... +150|-55 ... +150|C|| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300||°C| |**TSOLD**|Plastic Body for 10s<br>260 °C|260 °C|260 °C|260 °C|260 °C| |**Md**<br>**Weight**|Mounting Torque (TO-247&TO-3P)<br>1.13 / 10<br>**Weight**TO-268<br>4.0|1.13 / 10<br>4.0||Nm/lb.in<br>g|| |TO-3P<br>TO-247 6.0 g|TO-3P<br>5.5<br>TO-247 6.0 g|5.5<br>TO-247 6.0 g|5.5<br>TO-247 6.0 g|TO-247 6.0 g|g<br>TO-247 6.0 g| G = Gate D = Drain S = Source Tab = Drain ## **Features** - Designed for Linear Operation - International Standard Packages - Avalanche Rated - Guaranteed FBSOA at 75C |**Symbol**<br>(TJ= 25C Unless Otherwise Specified)|**Test Conditions Characteristic Values**<br>C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**<br>**Advantages**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**<br>**Advantages**| |---|---|---|---| |**BVDSS**|VGS = 0V, ID= 250μA<br>500|500|V<br>Easy to Mount<br>~~=~~| |**VGS(th)**<br>**IGSS**|VDS = VGS, ID= 250μA<br>2.5<br>VGS =20V, VDS= 0V|2.5<br>4.5 V<br>100 nA<br>Space Savings<br>High Power Density<br>~~=~~<br>~~—~~|| |**IDSS**<br>T<br>**RDS(on)**|VDS = VDSS, VGS= 0V<br>TJ= 125C<br>VGS = 10V, ID= 0.5 • ID25, Note 1|50<br>300<br>215 m|50A<br>300A<br>215 m<br>**Applications**<br>Solid State Circuit Breakers<br>Soft Start Controls<br>~~_~~<br>~~=~~| ||||Linear Amplifiers| ||||Programmable Loads| - Current Regulators © 2014 IXYS CORPORATION, All Rights Reserved DS99957B (02/14) **IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2** |**Symbol**<br>(TJ= 25°C,|**Test Conditions**<br>Unless Otherwise Specified)|**Characteristic Values**<br>**Min. Typ. Max.**|**Characteristic Values**<br>**Min. Typ. Max.**|**Characteristic Values**<br>**Min. Typ. Max.**|| |---|---|---|---|---|---| |**gfs**|VDS = 10V, ID= 0.5 • ID25, Note 1|9|12|15|S| |**Ciss**|||8100||pF| |**Coss**|VGS = 0V, VDS= 25V, f = 1MHz||530||pF| |**Crss**|||115||pF| |**RGi**|Integrated Gate Input Resistor||3.5||| |**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 0 (External)|<br> <br> <br>|35<br>117<br>94<br>40||ns<br>ns<br>ns<br>ns| |**Qg(on)**|||240||nC| |**Qgs**|VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||58||nC| |**Qgd**|||135||nC| |**RthJC**||||0.31 °C/W|| |**RthCS**|(TO-247&TO-3P)||0.25|°C/W|| ## **Safe Operating Area Specification** |||**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|| |---|---|---|---|---|---|---|---| |**Symbol**|**Test Conditions**|**Min.**||**Typ.**||**Max.**|| |**SOA**|VDS= 400V, ID= 0.5A, TC= 75°C, Tp = 2s|200|||||W| |**Source-Drain Diode**|||||||| |**Symbol**|**Test Conditions**|**Characteristic**||||**Values**|| |(TJ= 25C, Unless Otherwise Specified)||**Min.**||**Typ.**||**Max.**|| |**IS**|VGS= 0V|||||30|A| |**ISM**|Repetitive, Pulse Width Limited by TJM|||||120|A| |**VSD**|IF= IS, VGS= 0V, Note 1|||||1.5|V| |**trr**|<br>IF= IS, -di/dt = 100A/s,|||500|||ns| ||VR= 100V, VGS= 0V||||||| Note 1: Pulse test, t 300s , duty cycle, d 2 %. **==> picture [167 x 137] intentionally omitted <==** **==> picture [157 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 Outline<br>Terminals: 1 - Gate 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [162 x 314] intentionally omitted <==** **----- Start of picture text -----**<br> TO-3P Outline<br>**----- End of picture text -----**<br> ||**TO-247**|**TO-247**|**TO-247**|**TO-247**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||**1**|||**2**||**3**||P|||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| ||||||||||||||~~e~~|||||||||| ||Terminals:||||||||1 -|||Gate||||2 - Drain||||||| ||||||||||3 -|||Source||||||||||| |||Dim.|||||Millimeter|||||||||Inches||||||| |||||||Min.|||||||Max.|||Min.|||Max.|||| ||||A||||4.7||||||5.3|||.185|||.209|||| ||||A1||||2.2||||||2.54|||.087|||.102|||| ||||A2||||2.2||||||2.6|||.059|||.098|||| ||||b||||1.0||||||1.4|||.040|||.055|||| ||||b1|||1.65|||||||2.13|||.065|||.084|||| ||||b~~2~~|||2.87|||||||3.12|||.113|||.123|||| ||||C|||||.4|||||.8|||.016|||.031|||| ||||D|||20.80|||||||21.46|||.819|||.845|||| ||||E|||15.75|||||||16.26|||.610|||.640|||| ||||e|||5.20|||||||5.72||0.205 0.225|||||||| ||||L|||19.81|||||||20.32|||.780|||.800|||| ||||L1||||||||||4.50||||||.177|||| ||||P|||3.55|||||||3.65|||.140|||.144|||| ||||Q|||5.89|||||||6.40||0.232 0.252|||||||| ||||R|||4.32|||||||5.49|||.170|||.216|||| ||||S|||6.15|||||BSC|||||242 BSC||||||| |||||||||||||||||||||||| IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2** **==> picture [163 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br> **==> picture [253 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>VGS = 20V<br> 12V<br> 10V<br>24<br> 9V<br>18<br>8V<br>12<br>7V<br>6<br>6V<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ TJ = 25ºC** **==> picture [254 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>VGS = 20V<br>70 14V<br> 12V<br>60<br>10V<br>50<br>40<br>9V<br>30<br>8V<br>20<br>7V<br>10<br>6V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125ºC** **==> picture [253 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>VGS = 20V<br> 12V<br> 10V<br>24<br> 9V<br>8V<br>18<br>7V<br>12<br>6V<br>6<br>5V<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature** **==> picture [256 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>V GS = 10V<br>2.4<br>2.0<br>I D = 30A<br>1.6 I D = 15A<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current** **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [531 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8 35<br>V GS = 10V<br>30<br>2.4 T J = 125ºC<br>25<br>2.0<br>20<br>15<br>1.6<br>10<br>TJ = 25ºC<br>1.2<br>5<br>0.8 0<br>0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2014 IXYS CORPORATION, All Rights Reserved ## **IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2** **==> picture [535 x 425] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>50 30<br>27 TJ = - 40ºC<br>40 24<br>TJ = 125ºC 21 25ºC<br>30 25ºC 18<br> - 40ºC 125ºC<br>15<br>20 12<br>9<br>10 6<br>3<br>0 0<br>3.5 4.5 5.5 6.5 7.5 8.5 9.5 0 5 10 15 20 25 30 35 40 45 50<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>90 16<br>80 14 VDS = 250V<br> I D = 15A<br>70 12 I G = 10mA<br>60<br>10<br>50<br>8<br>40<br>30 TJ = 125ºC 6<br>TJ = 25ºC 4<br>20<br>10 2<br>0 0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 100 150 200 250 300 350<br>VSD - Volts QG - NanoCoulombs<br> - Siemens<br> - AmperesID gf s<br> - Volts<br>GS<br> - AmperesIS V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [251 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>f = 1 MHz<br>C iss<br>10,000<br>1,000 Coss<br>100<br>Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 12. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2** **==> picture [264 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Forward-Bias Safe Operating Area<br>@ TC = 25ºC<br>100<br>RDS(on) Limit<br>25µs<br>100µs<br>10<br>1ms<br>10ms<br>1<br>100ms<br>DC<br>T J = 150ºC<br>Single Pulse<br>0.1<br>10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 14. Forward-Bias Safe Operating Area<br>@ TC = 75ºC<br>100<br>RDS(on) Limit<br>25µs<br>10 100µs<br>1ms<br>10ms<br>1<br>100ms<br>DC<br>T J = 150ºC<br>Single Pulse<br>0.1<br>10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: T_30N50L2(7R)4-23-08-A **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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