IXTH24N50

|**MegaMOSTMFET**<br>**IXTH / IXTM 21N50**<br>**IXTH / IXTM 24N50**|**VDSS**<br>**ID25**<br>**RDS(on)**<br>**500 V**<br>**21 A**<br>**0.25Ω**<br>**500 V**<br>**24 A**<br>**0.23Ω**<br>~~7~~|
|---|---|
|N-Channel Enhancement Mode||
|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>500<br>V<br>**VDGR**<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>500<br>V<br>**VGS**<br>Continuous<br>±20<br>V<br>**VGSM**<br>Transient<br>±30<br>V<br>**ID25**<br>TC = 25°C<br>21N50<br>21<br>A<br>24N50<br>24<br>A<br>**IDM**<br>TC = 25°C, pulse width limited by TJM<br>21N50<br>84<br>A<br>24N50<br>96<br>A<br>**PD**<br>TC = 25°C<br>300<br>W<br>**TJ**<br>-55 ... +150<br>°C<br>**TJM**<br>150<br>°C<br>**Tstg**<br>-55 ... +150<br>°C<br>**Md**<br>Mounting torque<br>1.13/10<br>Nm/lb.in.<br>**Weight**<br>TO-204 = 18 g, TO-247 = 6 g<br>Maximum lead temperature for soldering<br>300<br>°C<br>1.6 mm (0.062 in.) from case for 10 s<br>**TO-247 AD (IXTH)**<br>**TO-204 AE (IXTM)**<br>G = Gate,<br>D = Drain,<br>S = Source,<br>TAB = Drain<br>D<br>G<br>**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**<br>**VDSS**<br>VGS = 0 V, ID= 250µA<br>500<br>V<br>**VGS(th)**<br>VDS = VGS, ID= 250µA<br>2<br>4<br>V<br>**IGSS**<br>VGS =±20 VDC, VDS= 0<br>±100<br>nA<br>**Features**<br>l International standard packages<br>l Low RDS (on)HDMOSTMprocess<br>l Rugged polysilicon gate cell structure<br>l Low package inductance (< 5 nH)<br>- easy to drive and to protect<br>l Fast switching times<br>**Applications**<br>l Switch-mode and resonant-mode<br>power supplies<br>l Motor controls<br>l Uninterruptible Power Supplies (UPS)<br>l DC choppers<br>D (TAB)<br>OBSOLETE||
|**IDSS**<br>VDS = 0.8 • VDSS<br>TJ= 25°C<br>200<br>µA<br>VGS = 0 V<br>TJ= 125°C<br>1<br>mA|**Advantages**|
|**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>21N50<br>0.25<br>Ω<br>24N50<br>0.23<br>Ω<br>Pulse test, t≤300µs, duty cycle d≤2 %|l Easy to mount with 1 screw (TO-247)<br>(isolated mounting screw hole)<br>l Space savings<br>High power density|



- l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) 

- l High power density 

IXYS reserves the right to change limits, test conditions, and dimensions. 

91536F(5/97) 

© 2000 IXYS All rights reserved 

1 - 4 

**IXTH 21N50 IXTH 24N50 IXTM 21N50 IXTM 24N50** 

|**Symbol**|**Test Conditions**|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)||**TO-247 AD (IXTH) Outline**|**TO-247 AD (IXTH) Outline**|**TO-247 AD (IXTH) Outline**|**TO-247 AD (IXTH) Outline**|**TO-247 AD (IXTH) Outline**||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||**min.**|||**typ.**|**max.**|||||||||||
|**gfs**|VDS = 10 V; ID= 0.5 • ID25, pulse test|||11||21||S||||||||||
|**Ciss**||||||4200||pF|||||1       2       3|||||
|**Coss**|VGS<br>= 0 V, VDS= 25 V, f = 1 MHz|||||450||pF||||||||||
|**Crss**||||||135||pF||||||||||
|**td(on)**<br>24<br>30<br>ns<br>**tr**<br>VGS<br>= 10 V, VDS= 0.5 • VDSS, ID= 0.5 ID25<br>33<br>45<br>ns<br>**td(off)**<br>RG= 2Ω,(External)<br>65<br>80<br>ns<br>**tf**<br>30<br>40<br>ns<br>**Qg(on)**<br>160<br>190<br>nC<br>**Qgs**<br>VGS<br>= 10 V, VDS= 0.5 • VDSS, ID= 0.5 ID25<br>28<br>40<br>nC<br>**Qgd**<br>75<br>85<br>nC<br>**RthJC**<br>0.42<br>K/W<br>**RthCK**<br>0.25<br>K/W<br>**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**IS**<br>VGS = 0<br>21N50<br>21<br>A<br>24N50<br>24<br>A<br>**ISM**<br>Repetitive;<br>21N50<br>84<br>A<br>pulse width limited by TJM<br>24N50<br>96<br>A<br>**VSD**<br>IF= IS, VGS= 0 V,<br>1.5<br>V<br>Pulse test, t≤300µs, duty cycle d≤2 %<br>**trr**<br>IF= IS, -di/dt = 100 A/µs, VR= 100 V<br>600<br>ns<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b2<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>S<br>6.15 BSC<br>242 BSC<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>6.4<br>11.4<br>.250<br>.450<br>A1<br>1.53<br>3.42<br>.060<br>.135<br>∅b<br>1.45<br>1.60<br>.057<br>.063<br>∅D<br>22.22<br>.875<br>**TO-204 AE(IXTM) Outline**<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source<br>Tab - Drain<br>Pins<br>1 - Gate<br>2 - Source<br>Case - Drain<br>OBSOLETE||||||||||||||||||
||||||||||||e||10.67<br>11.17|.420|.440|||
||||||||||||e1||5.21<br>5.71|.205|.225|||
||||||||||||L||11.18<br>12.19|.440|.480|||
||||||||||||∅p||3.84<br>4.19|.151|.165|||
||||||||||||∅p1||3.84<br>4.19|.151|.165|||
||||||||||||q||30.15 BSC|1.187 BSC||||
||||||||||||R||12.58<br>13.33|.495|.525|||
||||||||||||R1||3.33<br>4.77|.131|.188|||
||||||||||||s||16.64<br>17.14|.655|.675|||
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|© 2000 IXYS All rights reserved||IXYS MOSFETS and IGBTs<br>4,835,592<br>4,881,106|||are covered by one or more<br>5,017,508<br>5,049,961||||of the following U.S. patents:<br>5,187,117<br>5,486,715|||||||2 - 4||
|||4,850,072|4,931,844||5,034,796<br>5,063,307||||5,237,481||5,381,025|||||||



**IXTH 21N50 IXTH 24N50 IXTM 21N50 IXTM 24N50** 

Fig. 1 Output Characteristics 

Fig. 2 Input Admittance 

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50 50<br>VGS = 10V 7V<br>45 45<br>40 TJ = 25°C 6V 40<br>35 35<br>30 30<br>25 25<br>TJ = 25°C<br>20 20<br>5V<br>15 15<br>10 10<br>5 5<br>0 0<br>0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 9 10<br>VDS - Volts VGS - Volts<br>Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence<br>of Drain to Source Resistance<br>1.6 2.50<br>TJ = 25°C<br>1.5 2.25<br>2.00<br>1.4<br>1.75<br>1.3<br>VGS = 10V 1.50<br>1.2 ID = 12A<br>VGS = 15V 1.25<br>1.1<br>1.00<br>1.0 0.75<br>0.9 0.50<br>0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TJ - Degrees C<br>Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of<br>Case Temperature Breakdown and Threshold Voltage<br>1.2<br>V<br>GS(th)  BVCES<br>30 1.1<br>24N50 1.0<br>20 0.9<br>21N50<br>0.8<br>10 0.7<br>0.6<br>0 0.5<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TC - Degrees C TJ - Degrees C<br>OBSOLETE<br> - Amperes  - Amperes<br>ID ID<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br> - Normalized<br> - Amperes<br>ID BV/VG(th)<br>**----- End of picture text -----**<br>


© 2000 IXYS All rights reserved 

3 - 4 

**IXTH 21N50 IXTH 24N50 IXTM 21N50 IXTM 24N50** 

## Fig.7 Gate Charge Characteristic Curve 

## Fig.8 Forward Bias Safe Operating Area 

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10<br>98 VIDDS = 12.5A = 250V 100 Limited by RDS(on) 10µs<br>7 IG = 10mA 100µs<br>10<br>6 1ms<br>5<br>4 10ms<br>3 1 100ms<br>2<br>1<br>0 0.1<br>0 25 50 75 100 125 150 175 200 1 10 100 500<br>Gate Charge - nCoulombs VDS - Volts<br>Fig.9 Capacitance Curves Fig.10 Source Current vs. Source<br>to Drain Voltage<br>50<br>4500<br>Ciss 45<br>4000<br>40<br>3500<br>35<br>3000<br>30<br>f = 1 Mhz<br>2500<br>VDS = 25V 25<br>2000 20<br>1500 15 TJ = 125°C<br>1000 10 TJ = 25°C<br>Coss<br>500 Crss 5<br>0 0<br>0 5 10 15 20 25 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>VDS - Volts VSD - Volt<br>Fig.11  Transient Thermal Impedance<br>1<br>D=0.5<br>0.1<br>D=0.2<br>D=0.1<br>D=0.05<br>0.01 D=0.02<br>D=0.01<br>Single pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Time - Seconds<br>OBSOLETE<br> - Volts<br>GE<br>V  - AmperesID<br> - Amperes<br>ID<br>Capacitance - pF<br>Thermal Response  - K/W<br>**----- End of picture text -----**<br>


© 2000 IXYS All rights reserved 

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