Image not available
Illustrative purposes only
IXTH15N50L2
Power MOSFET, LINEAR L2™, N Channel, 500 V, 15 A, 0.48 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power D
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 15A
- Drain Source On State Resistance: 0.48ohm
- Gate Source Threshold Voltage Max: 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.72 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **Linear L2[TM] Power MOSFETs w/ Extended FBSOA** **VDSS = 500V DSS ID25 = 15A D25** **IXTA15N50L2 VDSS = 500V IXTP15N50L2 ID25 = 15A R ≤ 480m Ω IXTH15N50L2 DS(on)** N-Channel Enhancement Mode Avalanche Rated |N-Channel Enhancement Mode<br>Avalanche Rated|N-Channel Enhancement Mode<br>Avalanche Rated||~~6~~|**TO-263 AA (IXTA)**<br>G<br>~~6~~|**TO-263 AA (IXTA)**<br>G<br>~~6~~|**TO-263 AA (IXTA)**<br>G<br>~~6~~|~~6~~|~~6~~| |---|---|---|---|---|---|---|---|---| |||||||S||| |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|||D (Tab)||| |**VDSS**|TJ = 25°C to 150°C|500|V|**TO-220AB (IXTP)**||||| |**VDGR**<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>500<br>V<br>**VGSS**<br>Continuous<br>±20<br>V<br>**VGSM**<br>Transient<br>±30<br>V<br>**ID25**<br>TC = 25°C<br>15<br>A<br>**IDM**<br>TC = 25°C, Pulse Width Limited by TJM<br>35<br>A<br>**IA**<br>TC = 25°C<br>15<br>A<br>**TO-247 (IXTH)**<br>G<br>D S<br>D (Tab)<br>~~a~~||||||||| |**EAS**|TC = 25°C|750|mJ|||||| |**PD**|TC = 25°C|300|W|||||| |**TJ**||-55 ... +150|°C|G||||| |**TJM**<br>**Tstg**||150<br>-55 ... +150|°C<br>°C|S<br>D||D(Tab)||| |**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C|G = Gate D = Drain|G = Gate D = Drain|G = Gate D = Drain|G = Gate D = Drain|G = Gate D = Drain| |**TSOLD**|Plastic Body for 10s|260|°C|S = Source Tab = Drain|S = Source Tab = Drain|S = Source Tab = Drain|S = Source Tab = Drain|| |**Md**|Mounting Torque (TO-220 & TO-247)|1.13/10 Nm/lb.in.|1.13/10 Nm/lb.in.|||||| |**Weight**|TO-263|2.5|g|**Features**||||| ||TO-220|3.0|g|||||| |TO-247|TO-247|6.0|g|Designed for Linear Operation|||Designed for Linear Operation|Designed for Linear Operation| Designed for Linear Operation International Standard Packages Avalanche Rated Molding Epoxies Meet UL 94 V-0 Flammability Classification Guaranteed FBSOA at 75°C ## **Advantages** |(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>500|~~—~~|V<br>~~—~~| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5 4.5 V|2.5 4.5 V<br>~~—_~~|2.5 4.5 V| |**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±<br>~~—_~~<br>~~—_~~|±100<br>nA<br>| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125°C<br>200|25<br>200<br>~~fo~~|25<br>μA<br>200μA<br>~~fo~~| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>480|480<br>~~fo~~<br>~~—~~|480 mΩ<br>~~fo~~| Easy to Mount Space Savings High Power Density **Applications** Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads , Current Regulators DS100054B(12/11) © 2011 IXYS CORPORATION, All Rights Reserved ## **IXTA15N50L2 IXTP15N50L2 IXTH15N50L2** |**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 4.5 6.3 8.0<br>~~|~~|, Note 1 4.5 6.3 8.0<br>~~|~~|, Note 1 4.5 6.3 8.0<br>S| |**Ciss**<br>4080<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>265<br>**Crss**<br>68<br>~~|~~|4080<br>265<br>68<br>~~|~~|pF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br>73<br>**td(off)**<br>110<br>**tf**<br>65<br>**Resistive Switching Times**<br>VGS= 10V, 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10Ω(External)|38<br>73<br>110<br>65|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>123<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>20<br>**Qgd**<br>72|123<br>20<br>72|nC<br>nC<br>nC| |**RthJC**<br>0.42<br>**RthCS**<br>(TO-220)<br>0.50<br>(TO-247)<br>0.25|0.42<br>0.50<br>0.25|0.42°C/W<br>°C/W<br>°C/W| ## **TO-247 Outline** **==> picture [35 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> 1 = Gate<br>2 = Drai n<br>3 = S our ce<br>**----- End of picture text -----**<br> ## **Safe Operating Area Specification** |**Characteristic Values**<br>**Symbol**<br>**SOA**|**Characteristic Values**<br>**Test Conditions**<br>**Min. Typ. Max.**<br>VDS= 400V, ID= 375mA, TC= 75°C, tp= 2s 150|W| |---|---|---| ## **Source-Drain Diode** |**Symbol**<br>(T= 25°C, Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**IS**<br>VGS= 0V|15 A|15 A| |**ISM**<br>Repetitive, pulse width limited by TJM|60 A|60 A| |**VSD**<br>IF= 15A, VGS= 0V, Note 1<br>1.5 V|1.5 V|1.5 V| |**trr**<br>570<br>IF= 15A, -di/dt = 100A/μs, VR= 100V, VGS= 0V|570|ns| ## **TO-220 Outline** Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. **==> picture [66 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 Outline<br>:— re<br>at| i<br>| |<br>~ L<br>LOL ve<br>gerUj UR<br>1 = Gate<br>2 = Drain<br>3 = Source<br>4 = Drain<br>**----- End of picture text -----**<br> **==> picture [98 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTA15N50L2 IXTP15N50L2 IXTH15N50L2** **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ =25ºC<br>16<br>VGS = 20V<br>14 12V<br> 10V<br> 9V<br>12<br>8V<br>10<br>8<br>6 7V<br>4 6V<br>2<br>5V<br>0<br>0 1 2 3 4 5 6 7<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125ºC** **Fig. 2. Extended Output Characteristics @ TJ = 25ºC** **==> picture [252 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>VGS = 20V<br>35 14V<br> 12V<br> 10V<br>30<br>25<br>9V<br>20<br>8V<br>15<br>10<br>7V<br>5<br>6V<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 4. RDS(on) Normalized to ID = 7.5A Value vs. Junction Temperature** **==> picture [529 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 16 2.8<br>VGS = 20V<br>14 10V VGS = 10V<br> 9V 2.4<br>12<br>8V I D = 15A<br>2.0<br>10<br>I D = 7.5A<br>8 7V 1.6<br>6<br>1.2<br>6V<br>4<br>0.8<br>2 5V<br>0 0.4<br>0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 7.5A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.0 16<br>VGS = 10V TJ = 125ºC 14<br>2.6<br>12<br>2.2<br>10<br>1.8 8<br>6<br>1.4 TJ = 25ºC<br>4<br>1.0<br>2<br>0.6 0<br>0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2011 IXYS CORPORATION, All Rights Reserved **IXTA15N50L2 IXTP15N50L2 IXTH15N50L2** **==> picture [532 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>18 12<br>16 TJ = - 40ºC<br>10<br>14 25ºC<br>12 8 125ºC<br>10 TJ = 125ºC<br> 25ºC<br>6<br> - 40ºC<br>8<br>6 4<br>4<br>2<br>2<br>0 0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 2 4 6 8 10 12 14 16 18 20<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>45 16<br>40 14 VDS = 250V<br> I D = 7.5A<br>35 12 I G = 10mA<br>30<br>10<br>25<br>8<br>20<br>6<br>15 TJ = 125ºC<br>4<br>10 T J = 25ºC<br>5 2<br>0 0<br>0.5 0.6 0.7 0.8 0.9 1 0 20 40 60 80 100 120 140 160 180<br>VSD - Volts QG - NanoCoulombs<br> - Siemens<br> - AmperesID gf s<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [528 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 1<br>C iss<br>1,000<br>Coss<br>0.1<br>100<br>C rss<br>f = 1 MHz<br>10 0.01<br>0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTA15N50L2 IXTP15N50L2 IXTH15N50L2** **==> picture [537 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area<br>@ TC = 25ºC @ TC = 75ºC<br>100 100<br>R DS(on) Limit RDS(on) Limit<br>25µs<br>25µs<br>10 100µs 10<br>100µs<br>1ms<br>1ms<br>10ms<br>1 1<br>10ms<br>100ms<br>TT J C = 150ºC = 25 º C DC T T J C = 150ºC = 75ºC DC 100ms<br>Single Pulse Single Pulse<br>0.1 0.1<br>10 100 1000 10 100 1000<br>VDS - Volts VDS - Volts<br> - Am peres - Am peres<br>ID ID<br>**----- End of picture text -----**<br> © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: T_15N50L2(6R)12-22-11-A **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →