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IXTH140P10T
Power MOSFET, P Channel, 100 V, 140 A, 0.01 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: TrenchP
- Qualification: -
- Power Dissipation: 568W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 140A
- Drain Source On State Resistance: 0.01ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 9.35 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **TrenchP[TM] Power MOSFETs** ## **IXTT140P10T IXTH140P10T** **V = -100V DSS I = -140A D25 R ≤ 10m Ω DS(on)** P-Channel Enhancement Mode Avalanche Rated **==> picture [59 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 (IXTT)<br>**----- End of picture text -----**<br> **==> picture [51 x 40] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br> |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|-100|V| |**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|-100|V| |**VGSS**|Continuous|±15|V| |**VGSM**|Transient|±25|V| |**ID25**|TC = 25°C|-140|A| |**IDM**|TC = 25°C, Pulse Width Limited by TJM|- 400|A| |**IA**|TC = 25°C|-140|A| |**EAS**|TC = 25°C|2.5|J| |**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|10|V/ns| |**PD**|TC = 25°C|568|W| |**TJ**||- 55 ... +150|°C| |**TJM**||150|°C| |**Tstg**||- 55 ... +150|°C| |**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C| |**TSOLD**|Plastic Body for 10s|260|°C| |**Md**|Mounting Torque (TO-247)|1.13 / 10|Nm/lb.in.| |**Weight**|**Weight**TO-268 4 g|TO-268 4 g|TO-268 4 g| ||TO-247|TO-2476g|g| ## **TO-247 (IXTH)** **==> picture [81 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low RDS(ON) and QG ## **Advantages** Easy to Mount Space Savings High Power Density ## **Applications** |(TC, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**<br>~~|~~|**Min. Typ. Max.**<br>~~||~~|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= - 250μA<br>-100<br>~~|~~<br>~~||~~|~~||~~<br>~~||~~|V| |**VGS(th)**<br>VDS = VGS, ID= - 250μA<br>- 2.0 - 4.0 V<br>~~|~~<br>~~||~~|- 2.0 - 4.0 V<br>~~| |~~<br>~~||~~<br>~~—_~~|- 2.0 - 4.0 V<br>~~—_~~| |**IGSS**<br>VGS =±15V, VDS= 0V<br>±<br>~~||~~|±<br>~~||~~<br>~~—_~~|±100<br>nA<br>~~—_~~| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>- 10<br>TJ= 125°C<br>-150|- 10<br>-150<br>~~—_a~~|- 10<br>μA<br>-150μA<br>~~—_a~~| |**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>10|10<br>~~|~~|10 mΩ<br>~~|~~| High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators ; Battery Charger Applications DS100371B(01/13) © 2013 IXYS CORPORATION, All Rights Reserved ## **IXTT140P10T IXTH140P10T** |**Symbol**<br>(TJ= 25°C,|**Test Conditions**<br>Unless Otherwise Specified)<br>|**Characteristic**<br>**Min. Typ.**|**Characteristic**<br>**Min. Typ.**|**Values**<br>**Max.**|**Values**<br>**Max.**| |---|---|---|---|---|---| |**gfs**|VDS= -10V, ID= 0.5 • ID25, Note 1|70|115||S| |**Ciss**|||32.8||nF| |**Coss**|VGS= 0V, VDS= - 25V, f = 1MHz||2290||pF| |**Crss**|||700||pF| |**td(on)**|**Resistive Switching Times**||58||ns| |**tr**<br>**td(off)**<br>**tf**|VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω(External)|<br> <br>|26<br>86<br>26||ns<br>ns<br>ns| |**Qg(on)**|||400||nC| |**Qgs**|VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||125||nC| |**Qgd**|||100||nC| |**RthJC**||||0.22|°C/W| |**RthCS**|TO-247||0.21||°C/W| ## **Source-Drain Diode** |**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|| |---|---|---|---|---|---| |(TJ= 25°C,|Unless Otherwise Specified)<br>|**Min.**|**Typ.**|**Max.**|| |**IS**|VGS= 0V|||-140|A| |**ISM**|Repetitive, Pulse Width Limited by TJM|||- 560|A| |**VSD**|IF= -100A, VGS= 0V, Note 1|||-1.4|V| |**trr**<br>**QRM**<br>**IRM**|<br>IF= - 70A, -di/dt = -100A/μs<br>VR= -100V, VGS= 0V|<br> <br>|130<br>650<br>-10||ns<br>nC<br> A| Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. **==> picture [162 x 313] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 Outline<br>Terminals: 1 - Gate 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> |||||||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||**TO-247**|||||**Outline**||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||**1**|||**2**||**3**||∅P|||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| ||||||||||||||~~e~~|||||||||| |||Terminals:|||||||1 -|||Gate||||2 - Drain||||||| ||||||||||3 -|||Source||||||||||| |||Dim.|||||Millimeter|||||||||Inches||||||| |||||||Min.|||||||Max.|||Min.|||Max.|||| ||||A||||4.7||||||5.3|||.185|||.209|||| ||||A1||||2.2||||||2.54|||.087|||.102|||| ||||A2||||2.2||||||2.6|||.059|||.098|||| ||||b||||1.0||||||1.4|||.040|||.055|||| ||||b1|||1.65|||||||2.13|||.065|||.084|||| ||||b~~2~~|||2.87|||||||3.12|||.113|||.123|||| ||||C|||||.4|||||.8|||.016|||.031|||| ||||D|||20.80|||||||21.46|||.819|||.845|||| ||||E|||15.75|||||||16.26|||.610|||.640|||| ||||e|||5.20|||||||5.72||0.205 0.225|||||||| ||||L|||19.81|||||||20.32|||.780|||.800|||| ||||L1||||||||||4.50||||||.177|||| ||||∅P|||3.55|||||||3.65|||.140|||.144|||| ||||Q|||5.89|||||||6.40||0.232 0.252|||||||| ||||R|||4.32|||||||5.49|||.170|||.216|||| ||||S|||6.15|||||BSC|||||242 BSC||||||| |||||||||||||||||||||||| - IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXTT140P10T IXTH140P10T** **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>-140<br>VGS = -10V<br> - 8V<br>-120<br> - 7V<br>-100<br>- 6V<br>-80<br>-60<br>-40<br>- 5V<br>-20<br>0<br>0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-900<br>VGS = -10V - 8V<br>-800 - 9V<br>-700<br>- 7V<br>-600<br>-500<br>-400<br>- 6V<br>-300<br>-200<br>-100 - 5V<br>0<br>0 -10 -20 -30 -40 -50<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 3. Output Characteristics @ TJ = 125ºC** **Fig. 4. RDS(on) Normalized to ID = - 70A Value vs. Junction Temperature** **==> picture [532 x 396] intentionally omitted <==** **----- Start of picture text -----**<br> -140 2.2<br>V GS = -10V<br> - 8V 2.0 V GS = -10V<br>-120 - 7V<br>- 6V 1.8<br>-100<br>1.6 I D = - 140A<br>-80 1.4 I D = - 70A<br>-60 1.2<br>- 5V 1.0<br>-40<br>0.8<br>-20<br>- 4V 0.6<br>0 0.4<br>0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 70A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.0 -160<br>VGS = -10V<br>-140<br>1.8<br>-120<br>TJ = 125ºC<br>1.6<br>-100<br>1.4 -80<br>-60<br>1.2<br>T J = 25ºC -40<br>1.0<br>-20<br>0.8 0<br>0 -50 -100 -150 -200 -250 -300 -350 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes - Normalized<br>ID DS(on)<br>R<br> - Normalized - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved ## **IXTT140P10T IXTH140P10T** **==> picture [260 x 425] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>-200<br>-180<br>-160<br>-140<br>-120<br>-100<br>T J = 125ºC<br>-80 25ºC<br> - 40ºC<br>-60<br>-40<br>-20<br>0<br>-3.4 -3.8 -4.2 -4.6 -5 -5.4 -5.8 -6.2<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-350<br>-300<br>-250<br>-200<br>-150<br>TJ = 125ºC<br>-100<br>TJ = 25ºC<br>-50<br>0<br>-0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [260 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>200<br>T J = - 40ºC<br>180<br>160<br>25ºC<br>140<br>120 125ºC<br>100<br>80<br>60<br>40<br>20<br>0<br>0 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [250 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> -10<br>-9 VDS = - 50V<br>-8 I D = - 70A<br> I G = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 50 100 150 200 250 300 350 400<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **Fig. 11. Capacitance** - 1,000 **==> picture [533 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 - 1,000<br>RDS(on) Limit<br>Ciss 25µs<br>10,000 - 100 100µs<br>C oss 1ms<br>1,000 - 10<br>10ms<br>Crss TJ = 150 º C 100ms<br>T C = 25ºC DC<br>f = 1 MHz Single Pulse<br>100 -1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 -1 - 10 - 100<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTT140P10T IXTH140P10T** **==> picture [531 x 638] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.<br> Junction Temperature Drain Current<br>50 50<br> RG = 1Ω, VGS = -10V RG = 1Ω, VGS = -10V<br> V DS = - 50V V DS = - 50V<br>40 40<br>T J = 125ºC<br>I D = -140A<br>30 30<br>I D = - 70A T J = 25ºC<br>20 20<br>10 10<br>25 35 45 55 65 75 85 95 105 115 125 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140<br>TJ - Degrees Centigrade ID - Amperes<br>Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.<br> Gate Resistance Junction Temperature<br>200 320 40 140<br>180 t r t d(on) - - - - 280 t f t d(off) - - - -<br> TJ = 125ºC, VGS = -10V 35 R G = 1Ω, V 1Ω, V GS = -10V10V 120<br>160 VDS = - 50V 240 VDS = - 50V DS = - 50V = - 50V<br>I D = - 70A D = - 70A = - 70A<br>140 200<br>30 100<br>120 160 I D = - 140A<br>I D = -140A 25 80<br>100 120<br>I D = - 70A D = - 70A = - 70A<br>80 I D = - 70A 80<br>20 60<br>60 40<br>40 0 15 40<br>1 2 3 4 5 6 7 8 9 10 25 35 45 55 65 75 85 95 105 115 125<br>RG - Ohms TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br>Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.<br> Drain Current Gate Resistance<br>32 140 180 360<br> t f td(off) - - - - 160 t f td(off)d(off) - - - - 320<br>30 R VDSG = 1Ω, V = - 50V GS = -10V 120 140 VJDSDS = - 50V GS T JDSDS = - 50V GS = 125ºC, V = - 50V GS = -10V 280<br>120 I D = - 70A 240<br>28 100<br>100 200<br>TJ = 125ºC<br>80 160<br>26 80<br>TJ = 25ºC 60 I D = -140A140A 120<br>40 80<br>24 60<br>20 40<br>22 40 0 0<br>-50 -60 -70 -80 -90 -100 -110 -120 -130 -140 1 2 3 4 5 6 7 8 9 10<br>ID - Amperes RG - OhmsG - Ohms - Ohms<br>t - Nanosecondsr t - Nanosecondsr<br> d(on)t d(off)tt<br>t - Nanosecondsr t - Nanosecondsf - Nanosecondsff<br> - Nanoseconds - Nanoseconds<br> d(off)t d(off)tt<br>t - Nanosecondsf t - Nanosecondsf - Nanosecondsff<br> - Nanoseconds - Nanoseconds<br>**----- End of picture text -----**<br> **==> picture [256 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 40 140<br> t f t d(off) - - - -<br>35 R G = 1Ω, V 1Ω, V GS = -10V10V 120<br> VDS = - 50V DS = - 50V = - 50V<br>I D = - 70A D = - 70A = - 70A<br>30 100<br>I D = - 140A<br>25 80<br>I D = - 70A D = - 70A = - 70A<br>20 60<br>15 40<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br> d(off)tt<br>t - Nanosecondsf - Nanosecondsff<br> - Nanoseconds<br>**----- End of picture text -----**<br> **==> picture [255 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 180 360<br>160 t f td(off)d(off) - - - - 320<br> T = 125ºC, V GS = -10V<br>140 280<br> VJDSDS = - 50V GS<br>120 I D = - 70A 240<br>100 200<br>80 160<br>60 I D = -140A140A 120<br>40 80<br>20 40<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - OhmsG - Ohms - Ohms<br> d(off)tt<br>t - Nanosecondsf - Nanosecondsff<br> - Nanoseconds<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved **IXTT140P10T IXTH140P10T** **==> picture [538 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 19. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_140P10T(A8-P10) 01-29-13 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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