Image not available
Illustrative purposes only
IXTH10P60
Power MOSFET, P Channel, 600 V, 10 A, 1 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 10A
- Drain Source On State Resistance: 1ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.78 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **Power MOSFETs** ## **IXTT10P60 IXTH10P60** **V = - 600V DSS I = - 10A D25 R ≤ 1 Ω DS(on)** P-Channel Enhancement Mode Avalanche Rated ## **TO-268 (IXTT)** |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|- 600|V| |**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|- 600|V| |**VGSS**|Continuous|±20|V| |**VGSM**|Transient|±30|V| |**ID25**|TC = 25°C|- 10|A| |**IDM**|TC = 25°C, Pulse Width Limited by TJM|- 40|A| |**IA**|TC = 25°C|- 10|A| |**EAS**|TC = 25°C|3|J| |**PD**|TC = 25°C|300|W| |**TJ**||- 55 ... +150|°C| |**TJM**||150|°C| |**Tstg**||- 55 ... +150|°C| |**TL**|1.6mm (0.062in.) from Case for 10s|300|°C| |**Tsold**|Plastic Body for 10 seconds|260|°C| |**Md**|Mounting Torque (TO-247)|1.13 / 10|Nm/lb.in.| |**Weight**|**Weight**TO-268 4 g|TO-268 4 g|TO-268 4 g| |TO-247 6 g|TO-247 6 g|TO-247 6 g|TO-247 6 g| **==> picture [51 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br> **==> picture [109 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 (IXTH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** International Standard Packages Low R HDMOS[TM] Process DS (on) Rugged Polysilicon Gate Cell Structure Avalanche Rated Low Package Inductance - Easy to Drive and to Protect ## **Advantages** |**Symbol**<br>(T= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= - 250μA<br>- 600||V| |**VGS(th)**<br>VDS = VGS, ID= - 250μA<br>- 3.0<br>- 5.0 V|- 5.0 V<br>~~—_~~|- 5.0 V| |**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±<br>~~—_~~|±100 nA<br>| |**IDSS**<br>VDS = 0.8 • VDSS, VGS= 0V<br>- 25<br>TJ= 125°C<br>-1|- 25<br>-1<br>~~_~~|- 25μA<br>-1 mA<br>~~_~~| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|1<br>~~_~~<br>~~—~~|1Ω<br>~~_~~<br>~~—~~| } High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment DS98849E(01/13) © 2013 IXYS CORPORATION, All Rights Reserved ## **IXTT10P60 IXTH10P60** |**Symbol**<br>(TJ= 25°C,|**Test Conditions**<br>Unless Otherwise Specified)<br>|**Characteristic Values**<br>**Min. Typ. Max.**|**Characteristic Values**<br>**Min. Typ. Max.**|**Characteristic Values**<br>**Min. Typ. Max.**|| |---|---|---|---|---|---| |**gfs**|VDS= -10V, ID= 0.5 • ID25, Note 1|5|10.5||S| |**Ciss**|||4665||pF| |**Coss**|VGS= 0V, VDS= - 25V, f = 1MHz||437||pF| |**Crss**|||157||pF| |**td(on)**|**Resistive Switching Times**||33||ns| |**tr**<br>**td(off)**<br>**tf**|VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 4.7Ω(External)|<br> <br>|27<br>85<br>35||ns<br>ns<br>ns| |**Qg(on)**|||135||nC| |**Qgs**|VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||30||nC| |**Qgd**<br>**RthJC**||<br>|45<br>|0.42|nC<br>°C/W| |**RthCS**|TO-247||0.21||°C/W| |**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**| |---|---|---| |**IS**<br>VGS= 0V||- 10 A| |**ISM**<br>Repetitive, Pulse Width Limited by TM||- 40 A| |J<br>**V**<br>I= IV= 0V Note 1||- 3.0 V| |**SD**<br>F S,GS,<br>**trr**<br> <br>IF= -10A, -di/dt = -100A/μs<br>VR= -100V, VGS= 0V|<br>500|<br>ns| Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ||**TO-247**|**TO-247**|**TO-247**|**TO-247**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|**Outline**|||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||**1**|||**2**||**3**||∅P|||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| |||||||||||||||||||||||| ||||||||||||||~~e~~|||||||||| ||Terminals:||||||||1 -|||Gate||||2 - Drain||||||| ||||||||||3 -|||Source||||||||||| |||Dim.|||||Millimeter|||||||||Inches||||||| |||||||Min.|||||||Max.|||Min.|||Max.|||| ||||A||||4.7||||||5.3|||.185|||.209|||| ||||A1||||2.2||||||2.54|||.087|||.102|||| ||||A2||||2.2||||||2.6|||.059|||.098|||| ||||b||||1.0||||||1.4|||.040|||.055|||| ||||b1|||1.65|||||||2.13|||.065|||.084|||| ||||b~~2~~|||2.87|||||||3.12|||.113|||.123|||| ||||C|||||.4|||||.8|||.016|||.031|||| ||||D|||20.80|||||||21.46|||.819|||.845|||| ||||E|||15.75|||||||16.26|||.610|||.640|||| ||||e|||5.20|||||||5.72||0.205 0.225|||||||| ||||L|||19.81|||||||20.32|||.780|||.800|||| ||||L1||||||||||4.50||||||.177|||| ||||∅P|||3.55|||||||3.65|||.140|||.144|||| ||||Q|||5.89|||||||6.40||0.232 0.252|||||||| ||||R<br>S|||4.32<br>6.15|||||5.49<br> BSC|||||.170<br>.216<br>242 BSC||||||| |||||||||||||||||||||||| ## **TO-268 Outline** **==> picture [157 x 116] intentionally omitted <==** **==> picture [131 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Terminals: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXTT10P60 IXTH10P60** **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>-10<br>VGS = -10V<br>-9 - 7V<br> - 6V<br>-8<br>-7 - 5.5V<br>-6<br>-5<br>-4<br>-3 - 5V<br>-2<br>-1<br>0<br>0 -1 -2 -3 -4 -5 -6 -7 -8<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 426] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics @ TJ = 125ºC<br>-10<br>VGS = -10V<br>-9 - 7V<br> - 6V<br>-8<br>-7<br>-6<br>-5 - 5V<br>-4<br>-3<br>-2<br>-1 - 4V<br>0<br>-1 -3 -5 -7 -9 -11 -13 -15<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = - 5A Value vs.<br>Drain Current<br>2.4<br>VGS = -10V<br>2.2<br>T J = 125ºC<br>2.0<br>1.8<br>1.6<br>1.4<br>T J = 25ºC<br>1.2<br>1.0<br>0.8<br>0 -5 -10 -15 -20 -25 -30<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-32<br>V GS = -10V<br>-28 - 8V<br> - 7V<br>-24<br>-20<br>- 6V<br>-16<br>-12<br>- 5.5V<br>-8<br>-4<br>- 5V<br>0<br>0 -5 -10 -15 -20 -25 -30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = - 5A Value vs. Junction Temperature** **==> picture [256 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4<br>VGS = -10V<br>2.0<br>I D = -10A<br>1.6 I D = - 5A<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [263 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>-12<br>-10<br>-8<br>-6<br>-4<br>-2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved **IXTT10P60 IXTH10P60** **==> picture [261 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>-20<br>-18<br>-16<br>-14<br>-12<br>-10<br>-8<br>TJ = 125ºC<br> 25ºC<br>-6 - 40ºC<br>-4<br>-2<br>0<br>-3.0 -3.4 -3.8 -4.2 -4.6 -5.0 -5.4 -5.8 -6.2<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-30<br>-25<br>-20<br>-15<br>-10 T J = 125ºC<br>TJ = 25ºC<br>-5<br>0<br>0 -0.5 -1 -1.5 -2 -2.5<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [262 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>24<br>T J = - 40ºC<br>20<br>16 25ºC<br>12 125ºC<br>8<br>4<br>0<br>0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [253 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> -10<br>-9 VDS = - 300V<br> I D = - 5A<br>-8<br> I G = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 20 40 60 80 100 120 140<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance** **==> picture [257 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>f = 1 MHz<br>Ciss<br>1,000<br>C oss<br>Crss<br>100<br>0 -5 -10 -15 -20 -25 -30 -35 -40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [253 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTT10P60 IXTH10P60** **==> picture [538 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area<br> @ TC = 25ºC @ TC = 75ºC<br>- 100 -100<br>R DS(on) Limit 100µs R DS(on) Limit<br>100µs<br>- 10 -10<br>1ms<br>1ms<br>10ms<br>10ms<br>- 1 100ms - 1<br>100ms<br>DC<br>T J = 150ºC T J = 150ºC<br>TC = 25ºC TC = 75ºC DC<br>Single Pulse Single Pulse<br>- 0.1 - 0.1<br>- 10 - 100 - 1000 - 10 - 100 - 1000<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_10P60(7X-L69)9-17-12 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →