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IXTA76P10T
Power MOSFET, P Channel, 100 V, 76 A, 0.025 ohm, TO-263AA, Surface Mount
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: TrenchP
- Qualification: -
- Power Dissipation: 298W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263AA
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 76A
- Drain Source On State Resistance: 0.025ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.18 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **TrenchP[[TM]]**
**TrenchP[[TM]] IXTT76P10THV Power MOSFET IXTA76P10T IXTP76P10T IXTH76P10T**
P-Channel Enhancement Mode Avalanche Rated
||||G|D<br>S<br>®||
|---|---|---|---|---|---|
|||||||
|**Symbol**|**Test Conditions**|**Maximum Ratings**||||
|**VDSS**<br>**VDGR**<br>**VGSS**<br>**VGSM**|TJ = 25C to 150C<br>TJ = 25C to 150C, RGS= 1M<br>Continuous<br>Transient|- 100<br>- 100<br>15<br>25||V<br>V<br>V<br>V||
|**ID25**|TC = 25C|- 76||A||
|**IDM**|TC = 25C, Pulse Width Limited by TJM|- 230||A||
|**IA**|TC = 25C<br>- 38|- 38||A||
|**EAS**|TC = 25C||1|J||
|**PD**|TC = 25C|298||W||
|**TJ**<br>**TJM**<br>**Tstg**||-55 ... +150<br>150<br>-55 ... +150||C<br>C<br>C||
|**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300||°C||
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260||°C||
|**Md**<br>**Weight**<br>TO-268HV|Mounting Torque (TO-220 & TO-247)<br>TO-263<br>TO-220<br>TO-268HV|1.13 /10 Nm/lb.in.<br>2.5<br>3.0<br>4.0||1.13 /10 Nm/lb.in.<br>g<br>g<br>g||
|TO-247|TO-247|6.0||g||
**V = - 100V DSS I = - 76A D25 R 25m DS(on)**
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TO-268HV<br>(IXTT)<br>G<br>S<br>D (Tab)<br>TO-263 AA<br>(IXTA)<br>G<br>S<br>D (Tab)<br>TO-220AB<br>(IXTP)<br>G<br>ad D S D (Tab)<br>TO-247<br>(IXTH)<br>G<br>D<br>S D (Tab)<br>G = Gate D = Drain<br>S = Source Tab = Drain<br>**----- End of picture text -----**<br>
## **Features**
- International Standard Packages
- Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low RDS(ON) and QG
## **Advantages**
|(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**<br>~~|~~|**Min. Typ. Max.**<br>~~||~~|**Min. Typ. Max.**|
|**BVDSS**<br>VGS = 0V, ID= - 250A<br>-100<br>~~|~~<br>~~|~~|~~||~~<br>~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= - 250A<br>- 2.0 - 4.0 V<br>~~|~~<br>~~|~~<br>~~|~~|- 2.0 - 4.0 V<br>~~| |~~<br>~~||~~<br>~~||~~|- 2.0 - 4.0 V|
|**IGSS**<br>VGS =15V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~| |~~<br>~~||~~|100<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>- 15<br>TJ= 125C<br>- 750<br>~~|~~<br>~~|~~|- 15<br>- 750<br>~~| |7~~<br>~~||~~|- 15<br>A<br>- 750A|
|**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>25<br>~~|~~|25<br>~~||~~|25 m|
- Easy to Mount
- Space Savings
## **Applications**
- High-Side Switching
- Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators
- Battery Charger Applications
DS100024C(9/15)
© 2017 IXYS CORPORATION, All Rights Reserved
## **IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T**
|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|
|---|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**||**Max.**||
|**gfs**<br>VDS= -10V, ID= 0.5 • ID25, Note 1 35|58||S||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= - 25V, f = 1MHz<br> <br>**Crss**<br>|13.7<br>890<br>275||nF<br>pF<br>pF||
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|25<br>40<br>52<br>20||ns<br>ns<br>ns<br>ns||
||||||
|**Qg(on)**<br> <br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|197<br>65<br>65||nC<br>nC<br>nC||
|**RthJC**<br> <br>**RthCS**<br>TO-220<br> <br>TO-247<br>|<br>0.50<br>0.21||0.42C/W<br>C/W<br>C/W||
|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions Characteristic Values**<br> |||||
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**||**Max.**|
|**IS**<br>VGS= 0V||||- 76 A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||||- 304 A|
|**VSD**<br>IF= - 38A, VGS= 0V, Note 1||||-1.3 V|
|**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= - 38A, -di/dt = -100A/s<br>VR= - 50V, VGS= 0V||70<br>215<br>- 6||ns<br>nC<br>A|
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
## **IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T**
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Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>-80 -280<br>VGS = -10V VGS = -10V - 9V<br>-70 - 9V - 8V -240 - 8V<br>-60<br>- 7V -200<br>-50<br>-160 - 7V<br>-40 - 6V<br>-120<br>-30<br>-80 - 6V<br>-20<br>-40 - 5V<br>-10 - 5V<br>0 0<br>0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 0 -5 -10 -15 -20 -25 -30<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = - 38A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C Junction Temperature<br>-80 2.0<br>VGS = -10V<br>-70 - 9V 1.8 VGS = -10V<br> - 8V<br> - 7V<br>-60<br>1.6<br>I D = - 76A<br>-50 - 6V<br>1.4 I D = - 38A<br>-40<br>1.2<br>-30<br>- 5V<br>1.0<br>-20<br>-10 0.8<br>0 0.6<br>0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -2.8 -3.2 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = - 38A Value vs.<br>Fig. 6. Maximum Drain Current vs. Case Temperature<br>Drain Current<br>2.2 -90<br>V GS = -10V -80<br>2.0 T J = 125 [o] C<br>-70<br>1.8<br>-60<br>1.6 -50<br>-40<br>1.4<br>-30<br>1.2 T J = 25 [o] C<br>-20<br>1.0<br>-10<br>0.8 0<br>0 -40 -80 -120 -160 -200 -240 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes - Amperes<br>ID ID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
© 2017 IXYS CORPORATION, All Rights Reserved
## **IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T**
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Fig. 7. Input Admittance<br>-140<br>-120 VDS = -10V<br>-100<br>TJ = 125 [o] C<br> 25 [o] C<br>-80<br> - 40 [o] C<br>-60<br>-40<br>-20<br>0<br>-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-240<br>-200<br>-160<br>-120<br>TJJ = 125 [[o]] C<br>-80<br>TJ = 25J = 25 = 25 [[o]] C<br>-40<br>0<br>-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5<br>VSD - VoltsSD - Volts - Volts<br> - Amperes<br>ID<br> - AmperesISS<br>ISS<br>**----- End of picture text -----**<br>
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Fig. 8. Transconductance<br>100<br>TJ = - 40 [o] C<br>V DS = -10V<br>80<br>25 [o] C<br>60 125 [o] C<br>40<br>20<br>0<br>0 -20 -40 -60 -80 -100 -120 -140 -160<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>
**Fig. 10. Gate Charge**
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-240 -10<br>-9 VDS = - 50V<br>-200 I D = - 38A<br>-8<br> I G = -1mA<br>-7<br>-160<br>-6<br>-120 -5<br>-4<br>TJJ = 125 [[o]] C<br>-80<br>-3<br>TJ = 25J = 25 = 25 [[o]] C<br>-2<br>-40<br>-1<br>0 0<br>-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5 0 20 40 60 80 100 120 140 160 180 200<br>VSD - VoltsSD - Volts - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100,000 - 1,000<br>f = 1 MHz<br>1ms 100µs 25µs<br>RDS(on) Limit 10ms<br>100ms<br>10,000 -100<br>Ciss<br>DC<br>1,000 -10<br>Coss<br>TJ = 150 [o] C<br>TC = 25 [o] C<br>Crss Single Pulse<br>100 -1<br>0 -5 -10 -15 -20 -25 -30 -35 -40 -1 -10 -100<br>VDS - Volts VDS - Volts<br> - Volts<br> - AmperesISS VGS<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
## **IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T**
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Fig. 13. Resistive Turn-on Rise Time vs.<br> Junction Temperature<br>44<br>40 R G = 1Ω, V GS = -10V<br>VDS = - 50V<br>36<br>32 I D = - 38A<br>28<br>I D = - 76A<br>24<br>20<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>
**Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance**
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200 110<br>t r td(on)<br>160 TJ = 125 [o] C, VGS = -10V 90<br>VDS = - 50V I D = - 76A, - 38A<br>120 70<br>80 50<br>40 30<br>0 10<br>0 2 4 6 8 10 12 14 16 18 20<br>RG - Ohms<br>Fig. 17. Resistive Turn-off Switching Times vs.<br> Drain Current<br>24 66<br>23 t f td(off) 62<br>R G = 1Ω, V GS = -10V<br>22 V DS = - 50V 58<br>21 54<br>20 50<br>19 46<br>TJ = 125 [o] C, 25 [o] C<br>18 42<br>17 38<br>16 34<br>-36 -40 -44 -48 -52 -56 -60 -64 -68 -72 -76<br>ID - Amperes<br> - Nanosecondsr d(on)t<br>t<br> - Nanoseconds<br> - Nanosecondsf d(off)t<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>
**Fig. 14. Resistive Turn-on Rise Time vs. Drain Current**
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44<br>40<br>36 TJ = 25 [o] C<br>RG = 1Ω, VGS = -10V<br>32 V DS = - 50V<br>28<br>TJ = 125 [o] C<br>24<br>20<br>-36 -40 -44 -48 -52 -56 -60 -64 -68 -72 -76<br>ID - Amperes<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>
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Fig. 16. Resistive Turn-off Switching Times vs.<br> Junction Temperature<br>24 75<br>23 t f td(off) 70<br>R G = 1Ω, V GS = -10V<br>22 V DS = - 50V 65<br>21 60<br>20 I D = - 38A 55<br>19 50<br>I D = - 76A<br>18 45<br>17 40<br>16 35<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 18. Resistive Turn-off Switching Times vs.<br> Gate Resistance<br>200 300<br>t f td(off)<br>160 TJ = 125 [o] C, VGS = -10V 240<br>VDS = - 50V<br>I D = - 38A, - 76A<br>120 180<br>80 120<br>40 60<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20<br>RG - Ohms<br> - Nanosecondsf d(off)t<br>t<br> - Nanoseconds<br> - Nanosecondsf d(off)t<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>
© 2017 IXYS CORPORATION, All Rights Reserved
## **IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T**
**Fig. 19. Maximum Transient Thermal Impedance**
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1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_76P10T(A6)11-08-10-A
## **IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T**
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TO-268HV Outline<br>**----- End of picture text -----**<br>
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PINS:<br> 1 - Gate 2 - Source<br> 3 - Drain<br>**----- End of picture text -----**<br>
## **TO-263 Outline**
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1 = Gate<br>2 = Drain<br>3 = Source<br>4 = Drain<br>**----- End of picture text -----**<br>
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TO-247 Outline<br>D A<br>ESFL L PS _Es p A2 4— A - E L E B w a OE;<br>Q<br>R S D2<br>D1<br>D<br>P1<br>4<br>1 2 3<br>L1<br>C<br>| | | u = _ ae E1 }<br>L<br>A1 b<br>C b2 b4 1 - Gate<br>\. Lae vor I E V 2 a e L | 2,4 - Drain<br>SES \ c r 3 - Source<br>Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>
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TO-220 Outline<br>**----- End of picture text -----**<br>
© 2017 IXYS CORPORATION, All Rights Reserved
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Updated at April 29, 2026
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