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IXTA4N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 4 A, 0.85 ohm, TO-263 (D2PAK), Surface Mount
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power D
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 80W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4A
- Drain Source On State Resistance: 0.85ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.07 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **X2-Class Power MOSFET** **IXTY4N65X2 VDSS = 650V IXTA4N65X2 ID25 = 4A R 850m IXTP4N65X2 DS(on)** N-Channel Enhancement Mode |N-Channel Enhancement Mode|N-Channel Enhancement Mode||me)|**TO-252 (IXTY)**<br>G<br>S|**TO-252 (IXTY)**<br>G<br>S|S<br>~~.~~|S<br>~~.~~|S<br>~~.~~| |---|---|---|---|---|---|---|---|---| |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**||||D (Tab)|| |**VDSS**|TJ = 25C to 150C|650|V|||||| |**VDGR**|TJ = 25C to 150C, RGS= 1M|650|V|**TO-263 (IXTA)**||||| |**VGSS**|Continuous|30|V|||||| |**VGSM**<br>**ID25**|Transient<br>TC = 25C|40<br>4|V<br>A||G<br>S||D (Tab)|| |**IDM**|TC = 25C, Pulse Width Limited by TJM|8|A|**TO-220 (IXTP)**||||| |**IA**|TC = 25C|2|A|||||| |**EAS**|TC = 25C|150|mJ|||||| |**dv/dt**IS IDM, VDD VDSS, TJ 150°C 15 V/ns<br>**PD**<br>TC = 25C<br>80<br>W<br>**TJ**<br>-55 ... +150<br>C<br>~~OO~~||||S<br>G<br>D|||D (Tab)|| |**TJM**<br>**Tstg**||150<br>-55 ... +150|C<br>C|G = Gate D = Drain<br>S = Source Tab = Drain|G = Gate D = Drain<br>S = Source Tab = Drain||G = Gate D = Drain<br>S = Source Tab = Drain|| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C|||||| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C|**Features**||||| |**FC**|Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb||Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb|||||| |**Md**|Mounting Torque (TO-220)|1.13 / 10 Nm/lb.in|1.13 / 10 Nm/lb.in|International Standard Packages||||International Standard Packages| |**Weight**|TO-252<br>0.35|0.35|g|International Standard Packages<br>Low RDS(ON)and Q|International Standard Packages<br>and QG|||International Standard Packages| |TO-263|TO-263<br>2.50|2.50|g|Avalanche Rated|Avalanche Rated|||| |TO-220|TO-220<br>3.00 g|3.00 g|3.00 g|Low Package Inductance||||| - International Standard Packages - Low RDS(ON) and QG Avalanche Rated Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>650|~~_~~|V| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>3.0 5.0 V|5.0 V<br>~~a~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~a~~<br>~~a~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>100|5<br>100<br>~~a-~~|5A<br>100A| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|850 m<br>~~=~~|850 m| - High Power Density - Easy to Mount - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls DS100648D(6/18) © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTY4N65X2 IXTA4N65X2 IXTP4N65X2** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 2.5|4.2|S| |**RGi**<br>Gate Input Resistance<br>|13|| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|455<br>294<br>0.8|pF<br>pF<br>pF| |**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|32<br>82|pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 50(External)|22<br>28<br>57<br>25|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|8.3<br>2.0<br>3.0|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>TO-220|<br>0.50|1.56C/W<br> C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**IS**<br>VGS= 0V||4 A| |**ISM**<br>Repetitive, pulse Width Limited by TJM||16 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4 V| |**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 2A, -di/dt = 100A/μs<br>VR= 100V|160<br>890<br>11.4|ns<br>nC<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 **IXTY4N65X2 IXTA4N65X2 IXTP4N65X2** **==> picture [537 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>4.0 10<br>VGS = 10V<br>3.5 7V 9 VGS = 10V<br> 8V<br>8<br>3.0<br>6V 7 7V<br>2.5<br>6<br>2.0 5<br>5.5V 6V<br>4<br>1.5<br>3<br>1.0<br>2<br>0.5 5V<br>1 5V<br>0.0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 4 8 12 16 20 24 28 32<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 2A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>4.0 3.5<br>VGS = 10V VGS = 10V<br>3.5 8V 3.0<br>7V<br>3.0<br>2.5<br>I D = 4A<br>2.5<br>2.0<br>2.0 I D = 2A<br>6V 1.5<br>1.5<br>1.0<br>1.0<br>0.5<br>0.5<br>5V<br>0.0 0.0<br>0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 2A Value vs.<br>Fig. 6. Maximum Drain Current vs. Case Temperature<br> Drain Current<br>4.5 4.5<br>4.0 V GS = 10V 4.0<br>3.5<br>3.5 TJ = 125 [o] C<br>3.0<br>3.0<br>2.5<br>2.5<br>2.0<br>2.0 T J = 25 [o] C<br>1.5<br>1.5<br>1.0<br>1.0 0.5<br>0.5 0.0<br>0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes - Amperes<br>ID ID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTY4N65X2 IXTA4N65X2 IXTP4N65X2** **==> picture [263 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>7<br>6<br>5<br>4<br>T J = 125 [o] C<br> 25 [o] C<br>3<br> - 40 [o] C<br>2<br>1<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **==> picture [252 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>10<br>8<br>6<br>T J = 125 [o] C<br>4<br>T J = 25 [o] C<br>2<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [256 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000 Ciss<br>100<br>Coss<br>10<br>1<br>f = 1 MHz Crss<br>0.1<br>1 10 100 1000<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [263 x 423] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>8<br>TJ = - 40 [o] C<br>7<br>6<br>25 [o] C<br>5<br>4 125 [o] C<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6 7<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br> VDS = 325V<br> I D = 2A<br>8<br> I G = 10mA<br>6<br>4<br>2<br>0<br>0 1 2 3 4 5 6 7 8 9<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [263 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 12. Output Capacitance Stored Energy<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 600<br>VDS - Volts<br> - MicroJoules<br>OSS<br>E<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTY4N65X2 IXTA4N65X2 IXTP4N65X2** **==> picture [522 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Maximum Transient Thermal Impedance<br>10 10<br>25μs<br>RDS(on) Limit<br>1 1<br>100μs<br>0.1 1ms 0.1<br> T J = 150 o C 10ms<br> T C = 25 o C DC<br> Single Pulse<br>0.01 0.01<br>10 100 1,000 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - AmperesID - K / W Z(th)JC<br>**----- End of picture text -----**<br> **==> picture [524 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 Outline<br>E oP A<br>TO-263 Outline A1<br>TO-252 AA Outline b3 E L3 A c2 E C2A E1 a u Q H1 a r<br>IE 4 Slr 4F D itt L1 D1 ry D D2<br> A1 H 1 2 3 L2 A1 H 4 D1<br>L4 1 2 3 A2 E1<br>i L1 “t L b2 Eo b L3 G,| c e Banas e EJECTOR 123 A2<br> e1 e1 e b2 L2 c 1 - Gate2,4 - Drain 0 0.43 [11.0] PIN L1 L<br> 0 3 - Source<br>OPTIONAL 5.55MIN 0.34 [8.7]<br> A2 0.66 [16.6]<br>| ——o—|| 4 | 6.40 T 6.50MIN a1 aiaata 1 - Gate2,4 - Drain3 - Source — 0.10 [2.5]0.20 [5.0] lL ho . 0.06 [1.6]0.12 [3.0] L e E e1 | c = 1 - Gate2,4 - Drain 3X b3X b2 =)<br>rt ig ¢ 2.85MIN aie _—_ 3 - Source<br>oe BOTTOMVIEW 2.28 Me 1.25MIN INCHES MILLIMETER<br>LAND PATTERN RECOMMENDATION<br>sym Fg CHES] MILLIMETERS | MIN | MAX | MIN | MAX_| _ MININCHES| MAX | MILLIMETERSMIN [| MAX<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_4N65X2(X1-R2T5) 6-05-15-A **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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