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IXTA26P20P
Power MOSFET, P Channel, 200 V, 26 A, 0.17 ohm, TO-263AA, Surface Mount
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: PolarP
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263AA
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 26A
- Drain Source On State Resistance: 0.17ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.48 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **PolarP[[TM]]** **PolarP[[TM]] IXTA26P20P V = - 200V DSS Power MOSFETs IXTP26P20P ID25 = - 26A IXTQ26P20P R ≤ 170m Ω** P-Channel Enhancement Mode **DS(on) IXTH26P20P** Avalanche Rated **==> picture [188 x 76] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 AA (IXTA) TO-220AB (IXTP)<br>G<br>S<br>G<br>D<br>D (Tab) S D (Tab)<br>**----- End of picture text -----**<br> |**Symbol**|**Test Conditions**|**Maximum Ratings**|| |---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|- 200|V| |**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|- 200|V| |**VGSS**|Continuous|±20|V| |**VGSM**|Transient|±30|V| |**ID25**|TC = 25°C|- 26|A| |**IDM**|TC = 25°C, Pulse Width Limited by TJM|- 70|A| |**IA**|TC = 25°C|- 26|A| |**EAS**|TC = 25°C|1.5|J| |**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|10|V/ns| |**PD**|TC = 25°C|300|W| |**TJ**||- 55 ... +150|°C| |**TJM**||150|°C| |**Tstg**||- 55 ... +150|°C| |**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C| |**TSOLD**|Plastic Body for 10s|260|°C| |**Md**|Mounting Torque (TO-3P,TO-220 &TO-247)|1.13/10 Nm/lb.in.|| |**Weight**|TO-263|2.5|g| ||TO-220|3.0|g| ||TO-3P|5.5|g| ||TO-247|6.0|g| ## **TO-3P (IXTQ)** **==> picture [114 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D<br>S<br>D (Tab)<br>TO-247 (IXTH)<br>G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** International Standard Packages Avalanche Rated Rugged PolarP[TM] Process Low Package Inductance Fast Intrinsic Diode ## **Advantages** Easy to Mount Space Savings High Power Density |(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= - 250μA - 200|~~|~~|V| |**VGS(th)**<br>VDS = VGS, ID= - 250μA - 2.0 - 4.0 V|A - 2.0 - 4.0 V<br>~~=~~|A - 2.0 - 4.0 V| |**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±<br>~~=~~<br>~~|~~|±100<br>nA| |**IDSS**<br>VDS = VDSS,VGS= 0V<br>- 10<br>TJ= 125°C<br>-150|- 10<br>-150<br>~~_~~|- 10<br>μA<br>-150μA| |**RDS(on)**<br>VGS = -10V, ID= 0.5 • ID25, Note 1<br>170|170<br>~~_~~<br>~~|~~|170 mΩ| ## **Applications** High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99913D(01/13) © 2013 IXYS CORPORATION, All Rights Reserved **IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P** |**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**| |**gfs**<br>VDS= -10V, ID= 0.5 • ID25, Note 1 10|17|S| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= -25V, f = 1MHz<br> <br>**Crss**<br>|2740<br>540<br>100|pF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3.3Ω(External)|18<br>33<br>46<br>21|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= -10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|56<br>18<br>20|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>(TO-3P & TO-247)<br> <br>(TO-220)<br>|<br>0.21<br>0.50|0.42°C/W<br>°C/W<br>°C/W| ## **Safe Operating Area Specification** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |**Min.**|**Typ.**|**Max.**| |**SOA**<br>VDS= - 200V, ID= - 0.8A, TC= 70°C, Tp = 5s 160||W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**| |**IS**<br>VGS= 0V||- 26 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||- 104 A| |**VSD**<br>IF= -13A, VGS= 0V, Note 1||- 3.2 V| |**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= -13A, -di/dt = -100A/μs<br>VR= -100V, VGS= 0V|240<br>2.2<br>-18.0|ns<br>μC<br> A| Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P** **==> picture [142 x 296] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 Outline<br>1. Gate<br>2. Colle ctor<br>3. E mitter<br>4. Collector<br>Bottom<br>Side<br> Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 4.06 4.83 .160 .190<br>b 0.51 0.99 .020 .039<br>b2 1.14 1.40 .045 .055<br>c 0.40 0.74 .016 .029<br>c2 1.14 1.40 .045 .055<br>D 8.64 9.65 .340 .380<br>D1 8.00 8.89 .280 .320<br>E 9.65 10.41 .380 .405<br>E1 6.22 8.13 .270 .320<br>e 2.54 BSC .100 BSC<br>L 14.61 15.88 .575 .625<br>L1 2.29 2.79 .090 .110<br>L2 1.02 1.40 .040 .055<br>L3 1.27 1.78 .050 .070<br>L4 0 0.13 0 .005<br>**----- End of picture text -----**<br> ## **TO-247 Outline** ||**7**|||**t**|**l**|**i**|**n**|||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| ||||||||||||∅P|||||| ||||||||**1**||**2 3**|||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||||||||| |||||||||||e||||||| ||Terminals:|||||||1||- Gate||2 - Drain||||| ||Dim.||||Millimeter<br>Min.<br>Max.|||||||Inches<br>Min.<br>Max.||||| ||A<br>A1<br>A2|||||4.7<br>2.2<br>2.2||||5.3<br>2.54<br>2.6||.185<br>.087<br>.059|.209<br>.102<br>.098|||| ||b<br>b1<br>b2||||1.0<br>1.65<br>2.87|||||1.4<br>2.13<br>3.12||.040<br>.065<br>.113|.055<br>.084<br>.123|||| ||C<br>D<br>E|||.4<br>20.80<br>15.75||||||.8<br>21.46<br>16.26||.016<br>.819<br>.610|.031<br>.845<br>.640|||| ||e<br>L<br>L1|||5.20<br>19.81||||||5.72<br>20.32<br>4.50||0.205 <br>.780|0.225<br>.800<br>.177|||| ||∅P<br>Q||||3.55<br>5.89|||||3.65<br>6.40||.140<br>0.232|.144<br> 0.252|||| ||R||||4.32|||||5.49||.170|.216|||| **==> picture [65 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 Outline<br>**----- End of picture text -----**<br> **==> picture [51 x 34] intentionally omitted <==** **==> picture [98 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Pins: 1 - Gate 2 - Drain<br>**----- End of picture text -----**<br> ## **TO-3P Outline** **==> picture [182 x 299] intentionally omitted <==** © 2013 IXYS CORPORATION, All Rights Reserved ## **IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P** **==> picture [533 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ= 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>-28 -90<br>V GS = -10V VGS = -10V<br> - 8V -80 - 9V<br>-24<br>-70<br>-20 -7V<br>-60 - 8V<br>-16 -50<br>- 6V<br>-12 -40 - 7V<br>-30<br>-8 - 6V<br>- 5V -20<br>-4<br>-10 - 5V<br>0 0<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -5 -10 -15 -20 -25 -30<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **==> picture [535 x 423] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = -13A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br> Junction Temperature<br>-28 2.4<br>V GS = -10V<br> - 8V 2.2 V GS = -10V<br>-24<br>2.0<br>- 7V<br>-20 1.8 I D = - 26A<br>-16 - 6V 1.6<br>I D = -13A<br>1.4<br>-12<br>1.2<br>-8 1.0<br>- 5V 0.8<br>-4<br>0.6<br>0 0.4<br>0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = -13A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.0 -28<br>2.8 VGS = -10V<br>-24<br>2.6<br>TJ = 125ºC<br>2.4 -20<br>2.2<br>-16<br>2.0<br>1.8<br>-12<br>1.6<br>1.4 -8<br>1.2 TJ = 25ºC<br>-4<br>1.0<br>0.8 0<br>0 -10 -20 -30 -40 -50 -60 -70 -80 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P** **==> picture [262 x 639] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>-45<br>-40<br>TJ = - 40ºC<br>-35 25ºC<br> 125ºC<br>-30<br>-25<br>-20<br>-15<br>-10<br>-5<br>0<br>-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>-80<br>-70<br>-60<br>-50<br>-40<br>-30 T J = 125ºC<br>-20 TJ = 25ºC<br>-10<br>0<br>-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0<br>VSD - Volts<br>Fig. 11. Capacitance<br>10,000<br>Ciss<br>1,000<br>Coss<br>100<br>Crss<br>f = 1 MHz<br>10<br>0 -5 -10 -15 -20 -25 -30 -35 -40<br>VDS - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [263 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>32<br>TJ = - 40ºC<br>28<br>24<br>25ºC<br>20<br>125ºC<br>16<br>12<br>8<br>4<br>0<br>0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [253 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> -10<br>-9 V DS = -100V<br> I D = -13A<br>-8<br> I G = -1mA<br>-7<br>-6<br>-5<br>-4<br>-3<br>-2<br>-1<br>0<br>0 5 10 15 20 25 30 35 40 45 50 55 60<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [255 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2013 IXYS CORPORATION, All Rights Reserved ## **IXTA26P20P IXTP26P20P IXTQ26P20P IXTH26P20P** ## **Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC** ## **Fig. 14. Forward-Bias Safe Operating Area @ TC = 70ºC** **==> picture [529 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> - 100.0 - 100.0<br>25µs<br>R DS(on) Limit RDS(on) Limit 25µs<br>100µs<br>100µs<br>-10.0 - 10.0<br>1ms<br>1ms<br>10ms<br>10ms<br>100ms<br>- 1.0 DC - 1.0 100ms<br>DC<br>T J = 150ºC T J = 150ºC<br>TC = 25ºC T C = 70ºC<br>Single Pulse Single Pulse<br>- 0.1 - 0.1<br>-1 - 10 - 100 - 1000 -1 - 10 - 100 -1000<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_26P20P(B5)7-28-09-C **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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