IXKR25N80C

**IXKR 25N80C** 

Advanced Technical Information 

## **CoolMOS[™ 1)] Power MOSFET in ISOPLUS247[™] Package** 

N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 

**I** D25 **= 25 A V** DSS **= 800 V R = 125 m** W DS(on) 

**==> picture [134 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
D ISOPLUS 247 [™]<br>G<br>G E153432 D<br>S<br>S<br>**----- End of picture text -----**<br>


G = Gate, D = Drain, S = Source 

## **MOSFET** 

|**VDSS**<br>TVJ= 25°C to 150°C<br>800|V|
|---|---|
|**VGS**<br>±20|V|
|**ID25**<br>**ID90**<br>TC= 25°C<br>TC= 90°C<br>25<br>18|A<br>A|
|**dv/dt**<br>VDS< VDSS; IF <17 A | diF/dt |<100 A/µs<br>TVJ= 150°C<br>6|V/ns|
|**EAS**<br>**EAR**<br>ID=   4 A; L =  80 mH; TC= 25°C<br>ID= 17 A; L = 3.3 mH; TC= 25°C<br>0.67<br>0.5|mJ<br>mJ|



(TVJ = 25 ° C, unless otherwise specified) 

||**min.**|**typ.**|**max.**||
|---|---|---|---|---|
|**RDSon**<br>VGS= 10 V; ID= ID90||125|150|mW|
|**VGS(th)**<br>VDS= 20 V; ID= 2 mA|2||4|V|
|**IDSS**<br>VDS= VDSS; VGS= 0 V; TVJ=   25°C<br>TVJ= 125°C||100|50|µA<br>µA|
|**IGSS**<br>VGS=±20 V; VDS= 0 V|||200|nA|
|**Qg**<br>**Qgs**<br>**Qgd**<br>VGS= 10 V; VDS= 640 V; ID= 34 A<br>||~~an~~|180<br>24<br>92<br>~~an~~|355<br>~~an~~|nC<br>nC<br>nC|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>VGS= 10 V; VDS= 640 V<br>ID= 34 A; RG= 2.2Ω<br>~~re~~|~~re~~|25<br>15<br>72<br>6<br>~~re~~|~~re~~|ns<br>ns<br>ns<br>ns|
|**VF**<br>(reverse conduction)IF= 12.5 A; VGS= 0 V<br>~~re~~|~~re~~|1<br>~~re~~|1.3<br>~~re~~|V|
|**RthJC**|||0.5|K/W|



## **Features** 

- ISOPLUS247™ package with DCB Base 

- Electrical isolation towards the heatsink 

- Low coupling capacitance to the heatsink for reduced EMI 

- High power dissipation 

- High temperature cycling capability of chip on DCB 

- JEDEC TO-247AD compatible 

- Easy clip assembly 

- fast CoolMOS[™ 1)] power MOSFET 

- 3[rd] generation 

- High blocking capability 

- Low on resistance 

- Avalanche rated for unclamped inductive switching (UIS) 

- Low thermal resistance 

- due to reduced chip thickness 

- Enhanced total power density 

## **Applications** 

- Switched mode power supplies (SMPS) 

- Uninterruptible power supplies (UPS) 

- Power factor correction (PFC) 

- Welding 

- Inductive heating 

1) CoolMOS™ is a trademark of Infineon Technologies AG. 

IXYS reserves the right to change limits, test conditions and dimensions. 

20080526a 

© 2008 IXYS All rights reserved 

1 - 2 

**IXKR 25N80C** 

Advanced Technical Information 

## **Component** 

|**Symbol**|**Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|---|---|---|
|**VISOL**|IISOL <1 mA; 50/60 Hz||||2500|V~|
|**TVJ**|||-40...+150|||°C|
|**Tstg**|||-40...+125|||°C|
|**TL**|1.6 mm from case for 10 s||||300|°C|
|**FC**|mountingforce with clip||20 ... 120||20 ... 120|N|
|**Symbol**|**Conditions**|**Characteristic Values**|||||
|||**min.**|**typ.**||**max.**||
|**CP**|coupling capacity bewtween shorted||30|||pF|
||pin and mountingtab in the case||||||
|**RthCH**|with heatsink compound||0.25|||K/W|
|**Weight**|||6|||g|



IXYS reserves the right to change limits, test conditions and dimensions. 

20080526a 

© 2008 IXYS All rights reserved 

2 - 2