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IXHH40N150HV
Thyristor, 1.5 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Thyristors - SCRs
- Peak Repetitive Off-State Voltage, Vdrm:1.5kV; Gate Trigger Current Max, Igt:-; Current It av:-; On State RMS Current IT(rms):-; Thyristor Case Style:TO-247; No. of Pins:3Pins; Pea
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Through Hole
- Holding Current Max: 200mA
- On State RMS Current: -
- Thyristor Case Style: TO-247
- Average On State Current: -
- Gate Trigger Current Max: -
- Gate Trigger Voltage Max: -
- Operating Temperature Max: 150°C
- Peak Non Repetitive Surge Current: 7.6kA
- Peak Repetitive Off State Voltage: 1.5kV
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 26.97 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**V DM** ## Preliminary Technical Information ## **1500V MOS Gated IXHH40N150HV Thyristor** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>**----- End of picture text -----**<br> ## **= 1500V** |||**G**|||||||| |---|---|---|---|---|---|---|---|---|---| |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDM**<br>TJ = 25°C to 150°C<br>1500<br>V<br>**VGK**<br>Continuous<br>±30<br>V<br>**VGK**<br>Transient<br>±40<br>V<br>**ITSM**<br>TC = 25°C, 1μs<br>7.6<br>kA<br>**K**<br>~~—— ~~||||**TO-247HV**<br> Tab<br>G<br>K<br>A<br> ~~4~~|||||| ||TC = 25°C, 10μs<br>3.5|3.5<br>kA|kA||||||| |**PD**|TC = 25°C|695|W||||||| |**TJ**||-55 ... +150|°C|G = Gate|K = Cathode|K = Cathode|K = Cathode|K = Cathode|K = Cathode| |**TJM**||150|°C|A = Anode Tab = Anode|A = Anode Tab = Anode||||| |**Tstg**||-55 ... +150|°C||||||| |**TL**|Maximum Lead Temperature for Soldering 300 °C||Maximum Lead Temperature for Soldering 300 °C||||||| |**TSOLD**|1.6 mm (0.062 in.) from Case for 10s 260||°C||||||| |**Md**|Mounting Torque 1.13/10 Nm/lb.in|Mounting Torque 1.13/10 Nm/lb.in|Mounting Torque 1.13/10 Nm/lb.in|**Features**|||||| |**Weight**|6 g|6 g|6 g||||||| G = Gate K = Cathode A = Anode Tab = Anode - Very High Voltage Package - Very High Current Capability ## **Advantages** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max.**<br>~~|~~|**Min. Typ. Max.**<br>~~|~~|**Min. Typ. Max.**| |**VBR**<br>IA= 250A, VGK= 0V<br>1500 V<br>~~|~~|1500 V<br>~~|~~|1500 V| |**VGK(th)**<br>IA<br>= 250μA, VAK= VGK<br>2.5 5.0<br>~~|~~|2.5 5.0<br>~~|—~~|2.5 5.0<br>V| |**VT**<br>IT<br>= 1000A, VGK= 15V<br>5.95 7.5<br>|5.95 7.5<br>~~—~~|5.95 7.5<br>V| |**rT**IT<br>> I**L**, VGK= 15V<br>1.20 m<br>|1.20 m<br>~~—~~|1.20 m| |**VBO**<br>VGK= 15V<br>6.45<br>|6.45<br>~~—~~|V| |**ID**<br>VAK = 1500V, VGK= 0V<br>TJ= 125C|15<br>1 mA<br>~~_~~|15<br>A<br>1 mA| |**IL**<br>250<br>**IH**<br>200<br>~~|~~|250<br>200<br>~~=~~<br>~~|~~|A<br>A| |**IGKS**<br>VAK = 0V, VGK=30V<br>~~|~~|<br>~~|~~|200 nA| DS100611A(6/14) © 2014 IXYS CORPORATION, All Rights Reserved ## **IXHH40N150HV** |**Symbol Test Conditions**|**Test Conditions**<br>**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||||**TO-247HV Outline**||| |---|---|---|---|---|---|---|---|---|---|---| |(TJ= 25°C Unless Otherwise Specified)<br>**Min.**<br>**Ciks**<br>**Coks**VAK= 25V, VGK= 0V, f = 1MHz<br>**Crks**<br>**Qg(on)**<br>|||**Min. Typ. Max.**<br>2825<br>164<br>50<br>99|**Typ. Max.**<br>2825<br>164<br>50<br>99|**Typ. Max.**<br>pF<br>pF<br>pF<br>nC||||E<br>R<br>A<br>Q<br>S<br>A3<br>D<br>L1<br>D3<br>D1<br>D2<br>E2<br>2X<br>A2<br>0P<br>E1<br>0P1<br>4<br>3<br>1 2<br>ee.<br>e~~e~~<br>|<br>-aeamen|MOM<br>—<br>=<br>5<br>rh of<br>?|<br>~~I~~<br>~~C~~<br>~~=~~<br>~~a~~<br>a||| |**Qgk**I<br>**Qga**<br>**tri**|IC= 40A, VGK= 15V, VAK= 600V<br>**Capacitive Discharge, TJ = 25°C**|22<br>36<br>100|22<br>36<br>100||nC<br>nC<br>ns|||PINS:<br>e<br>c<br>b<br>A1<br>E3<br>3X<br>4X<br>3X<br>b1<br>e1<br>L<br>~~|~~<br>“TT<br>|<br>|<br>| |<br>|<br>Vl<br>a~~=~~<br>ll<br>-||| |**td**<br>**tri**<br>**td**|IA= 2000A, VGK= 15V, RG= 1<br>VAK= 1000V, L < 20nH, Notes 2 & 3<br>**Capacitive Discharge, TJ = 125°C**<br>IA= 2000A, VGK= 15V, RG= 1<br>VAK= 1000V, L < 20nH, Notes 2 & 3|50<br>100<br>50|50<br>100<br>50||ns<br>ns<br>ns|||1 - Gate 2 - Cathode<br>3, 4 - Anode<br>aio!<br>sym aEEN<br>EH<br>a riss Teo<br>| 4.90 510]<br>az|_075_| 083 | 1.90] 2.10]<br>| AS | 035 | 043 | 0.90] 110 |<br>pb [053 | 059] 1.35] 1.50 |<br>67 1075 | 083 | 1.90 | 2.10]||| |**RthJC**<br>**RthCS**||0.21|0.18 °C/W<br>0.21|0.18 °C/W<br>°C/W|0.18 °C/W<br>°C/W|||p81<br>|843 **|**20**.**8**0** **|**2140 **|**<br>| Dil} 638] 646<br>16 2<br>16.40||| Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. It is recommended to use a gate driver capable of supplying more than 4Amps and >15V gate voltage. 3. Refer to fig. 8 & 9. ## **PRELIMANARY TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXHH40N150HV** **==> picture [531 x 629] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Extended Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 125ºC<br>1200 1200<br>1000 eee V 17VGK = 20V |aaa 1000 | V 17VGK = 20V Hl<br> 15V 15V<br> 13V 13V<br>800 12V 800 11V<br> 11V 10V<br> 9V<br>600 || IR 600 HT<br>400 400<br>A eee<br>200 200<br>10V<br>9V<br>8V<br>8V<br>0 tM)eS 0 as | =ae 6V<br>0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8<br>VAK - Volts VAK - Volts<br>Fig. 3. Extended Output Characteristics @ TJ = - 40ºC Fig. 4. Gate Charge<br>1200 16<br>14 VAK = 600V<br>1000 VGK = 20V I A = 40A<br>| | | 18V Wy —_E ET tt ft de<br> 16V 12 I G = 10mA<br> 15V<br>800 14V<br>10<br> 13V<br> 12V<br>600 oe one 8 Mssauss7a<br>6 |_|<br>400 HHer eee = EEERERHEE<br>4<br>200 11V<br>2<br>9V<br>0 ssEF tt 7V 0 JFwooCPPePPLel_|<br>0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100<br>VAK - Volts QG - NanoCoulombs<br>Fig. 5. Capacitance Fig. 6. Maximum Transient Thermal Impedance<br>10,000 1<br>f = 1 MHz<br>C iks<br>1,000 0.1<br>Coks<br>100 0.01<br>C rks<br>10 0.001<br>0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1<br>VAK - Volts Pulse Width - Second<br>Amperes - - Amperes<br>IA IA<br> - Volts<br> - Amperes GK<br>IA V<br> - ºC / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> © 2014 IXYS CORPORATION, All Rights Reserved ## **IXHH40N150HV** ## **Fig. 7. Cauer Thermal Network** |i Ri (<br>1<br>2<br> 3 <br>4 0.002310 2.500000|i Ri () Ci (F)<br>10.0150040.005397<br>20.071079 0.028026<br> 0.0510070.121930<br>4 0.002310 2.500000| |---|---| ||10.015004| ||20.071079| ||0.051007| ||4 0.002310 2.500000| ||| **Fig. 8. Capacitive Discharge** **Fig. 9. Capacitive Discharge Waveform** IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXH_40N150HV(7A) 5-13-14
Updated at April 22, 2026
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