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IXGR60N60C3C1 — Silicon Carbide IGBT Single Transistor, 75 A, 2.5 V, 170 W, 600 V, TO-247AD, 3 Pins
Illustrative purposes only
This product is RoHS compliant

IXGR60N60C3C1

Silicon Carbide IGBT Single Transistor, 75 A, 2.5 V, 170 W, 600 V, TO-247AD, 3 Pins

  • Manufacturer: IXYS SEMICONDUCTOR
  • Product type: Single IGBTs
  • DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:170W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AD; No. of Pins:3Pins
  • No. of Pins: 3Pins
  • Product Range: -
  • Power Dissipation: 170W
  • Transistor Mounting: Through Hole
  • Transistor Case Style: TO-247AD
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 75A
  • Collector Emitter Voltage Max: 600V
  • Collector Emitter Saturation Voltage: 2.5V
Delivery and price
Units per pack 500
Price 17.09 €
Current stock 10+
Lead time 30 days

Updated at March 8, 2026

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