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IXGA30N60C3C1 — Silicon Carbide IGBT Single Transistor, 60 A, 3 V, 220 W, 600 V, TO-263, 3 Pins
Illustrative purposes only
This product is RoHS compliant

IXGA30N60C3C1

Silicon Carbide IGBT Single Transistor, 60 A, 3 V, 220 W, 600 V, TO-263, 3 Pins

  • Manufacturer: IXYS SEMICONDUCTOR
  • Product type: Single IGBTs
  • DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins:3Pins; Operat
  • No. of Pins: 3Pins
  • Product Range: -
  • Power Dissipation: 220W
  • Transistor Mounting: Surface Mount
  • Transistor Case Style: TO-263 (D2PAK)
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 60A
  • Collector Emitter Voltage Max: 600V
  • Collector Emitter Saturation Voltage: 3V
Delivery and price
Units per pack 100
Price 6.53 €
Current stock 10+
Lead time 30 days

Updated at March 8, 2026

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