IXFX32N100Q3

Power MOSFET, Q3-Class, N Channel, 1 kV, 32 A, 0.32 ohm, PLUS247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:6.5V; Powe
MSL: MSL 1 - Unlimited
SVHC: Lead (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: HiperFET
Qualification: -
Power Dissipation: 1.25kW
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: PLUS247
Drain Source Voltage Vds: 1kV
Operating Temperature Max: 150°C
Continuous Drain Current Id: 32A
Drain Source On State Resistance: 0.32ohm
Gate Source Threshold Voltage Max: 6.5V

Delivery and price
Units per pack	100
Price	18.06 €
Current stock	10+
Lead time	30 days

Datasheet

## **Q3-Class HiperFET[[TM]] Power MOSFET** 

## **IXFK32N100Q3 IXFX32N100Q3** 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|Q3-Class|IXFK32N100Q3|VDSS|=     1000V|
|HiperFET|[[TM]]|IXFX32N100Q3|ID25|=     32A|
|Power MOSFET|R||320m||
|DS(on)|
|D|t||300ns|
|rr|
|N-Channel Enhancement Mode|
|G|
|Fast Intrinsic Rectifier|TO-264|
|(IXFK)|
|S|
|G|
|D|
|S|
|Symbol|Test Conditions|Maximum Ratings|Tab|
|VDSS|TJ|= 25C to 150C|1000|V|
|VDGR|TJ|= 25C to 150C, RGS = 1M|1000|V|
|PLUS247|
|VGSS|Continuous|30|V|(IXFX)|
|VGSM|Transient|40|V|
|ID25|TC|= 25C|32|A|
|IDM|TC|= 25C,  Pulse Width Limited by TJM|96|A|G|
|IA|TC|= 25C|32|A|D|S|Tab|
|EAS|TC|= 25C|2|J|G  =  Gate|D     =  Drain|
|dv/dt|IS| IDM, VDD| VDSS, TJ| 150C|50|V/ns|S  =  Source|Tab  =  Drain|
|PD|TC|= 25C|1250|W|
|TJ|-55 ... +150|C|
|TJM|150|C|Features|
|Tstg|-55 ... +150|C|
||International Standard Packages|
|L|Maximum Lead Temperature for Soldering                     300|°C||Low Intrinsic Gate Resistance|
|TSOLD|Plastic Body for 10s|260                    °C||Avalanche Rated|
|Md|Mounting Torque  (TO-264)|1.13/10|Nm/lb.in.||Low Package Inductance|
||Fast Intrinsic Rectifier|
|FC|Mounting Force    (PLUS247)                    20..120 /4.5..27                N/lb.||Low RDS(on) and QG|
|Weight|TO-264|10|g|
|PLUS247|6                     g|

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- International Standard Packages 

- Low Intrinsic Gate Resistance 

## **Advantages** 

- High Power Density 

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||||||
|---|---|---|---|---|
|Symbol|Test Conditions|Characteristic Values|
|(TJ = 25C Unless Otherwise Specified)|Min.        Typ.        Max.|
|BVDSS|VGS|= 0V, ID = 3mA                                        1000|||V|
|VGS(th)|VDS|= VGS, ID = 8mA                            3.5                     6.5    V||||
|IGSS|VGS|= 30V, VDS = 0V|||200  nA|
|IDSS|VDS|= VDSS, VGS = 0V|50|A|
|TJ = 125C|3   mA|—|
|RDS(on)|VGS|= 10V, ID = 0.5 • ID25,  Note 1|||320  m|

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- Easy to Mount 

- Space Savings 

## **Applications** 

>  DC-DC Converters 

- Battery Chargers 

- Switch-Mode and Resonant-Mode Power Supplies  DC Choppers  Temperature and Lighting Controls 

DS100300C(1/20) 

© 2020 IXYS CORPORATION,  All Rights Reserved 

**IXFK32N100Q3 IXFX32N100Q3** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= 20V, ID= 0.5 • ID25,  Note 1                    20|32|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|10990<br>745<br>67|pF<br>pF<br>pF|
|**RGi**<br>Gate Input Resistance<br>|0.20||
||||
|**td(on)**<br> <br>**t**r<br> <br>**td(off)**<br> <br>**t**f<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|45<br>15<br>54<br>12|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Q**<br>|195<br>60<br>78|nC<br>nC<br>nC|
|**gd**<br>|||
|**RthJC**<br> <br>**RthCS**<br>|<br>0.15|0.10C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||32     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||128     A|
|**VSD**<br>IF= IS, VGS= 0V,  Note 1||1.4     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= 16A, -di/dt = 100A/s<br>VR= 100V, VGS= 0V|<br>1.2<br>12.3|300   ns<br>C<br> A|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

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IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFK32N100Q3 IXFX32N100Q3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>32<br>V GS = 10V<br>28<br>24 8V<br>20<br>16<br>12 7V<br>8<br>4 6V<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>32<br>VGS = 10V<br>28<br>24<br>7V<br>20<br>16<br>12<br>6V<br>8<br>4<br>5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 16A Value vs.<br>Drain Current<br>2.8<br>2.6 VGS = 10V<br>2.4 TJ = 125 [o] C<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4 T J = 25 [o] C<br>1.2<br>1.0<br>0.8<br>0 10 20 30 40 50 60<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>70<br>VGS = 10V<br>60<br>50<br>8V<br>40<br>30<br>7V<br>20<br>10<br>6V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 16A Value vs.<br>Junction Temperature<br>3.4<br>VGS = 10V<br>3.0<br>2.6<br>2.2 I D = 32A<br>1.8 I  D = 16A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Maximum Drain Current vs. Case Temperature** 

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35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION,  All Rights Reserved 

**IXFK32N100Q3 IXFX32N100Q3** 

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Fig. 7. Input Admittance Fig. 8. Transconductance<br>50<br>45 VDS = 20V  50 VDS = 20V  TJ = - 40 [o] C<br>40<br>TJ = 125 [o] C 40<br>35<br>         25 [o] C<br>25 [o] C<br>30        - 40 [o] C<br>30<br>25<br>20 125 [o] C<br>20<br>15<br>10<br>10<br>5<br>0 0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 5 10 15 20 25 30 35 40 45 50 55 60<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>100 10<br>90 9  V DS = 500V<br> I D = 16A<br>80 8<br> I G = 10mA<br>70 7<br>60 6<br>50 5<br>40 4<br>30 TJ = 125 [o] C 3<br>T J   = 25 [o] C<br>20 2<br>10 1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 100 120 140 160 180 200 220<br>VSD - Volts QG - NanoCoulombs<br> - Siemens<br> - AmperesID gf s<br> - Volts<br> - Amperes GS<br>IS V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

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100,000<br>f = 1 MHz<br>C iss<br>10,000<br>1,000 Coss<br>100<br>C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


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Fig. 12. Forward-Bias Safe Operating Area<br>100<br>RDS(on) Limit 100µs<br>10<br>1<br>T J  = 150 [o] C<br>TC = 25 [o] C<br>Single Pulse<br>1ms<br>0.1<br>10 100 1,000 10,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

**IXFK32N100Q3 IXFX32N100Q3** 

**Fig. 13. Maximum Transient Thermal Impedance** 

1 

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**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>AAAAA<br>0.2<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: F_32N100Q3(Q8-R44)10-10-12 

**IXFK32N100Q3 IXFX32N100Q3** 

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**----- Start of picture text -----**<br>
TO-264 Outline<br>D<br>— E ES B A _<br>Q S<br>Cd"<br>0R<br>Q1<br>D<br>1 in |<br>0R1 LTP q =<br>1 2 3 L1<br>C<br>—<br>Fa<br>L A1<br>_<br>| J M C A M<br>b1 b c<br>b2<br>e<br>S5 S oto 0P1 1  = Gate<br>2,4  = Drain<br>BACK SIDE 3  =  Source<br>9 (are A<br>4 0P K M D B M<br>I :<br>**----- End of picture text -----**<br>


## **PLUS247[TM] Outline** 

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**----- Start of picture text -----**<br>
A<br>A2 E Q E1<br>+S I— _—+, 4<br>i-— D2 i<br>R<br>j © fp |<br>D<br>4<br>1 2 3<br>L1 r<br>L<br>A1 b e<br>C 3 PLCS b2 2 PLCS 2 PLCS<br>HE b4 IH<br>1  = Gate<br>2,4  = Drain<br>3  =  Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

**IXFK32N100Q3 IXFX32N100Q3** ~~sd~~ 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 IXYS CORPORATION,  All Rights Reserved

Updated at April 27, 2026

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