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IXFX20N120P
Power MOSFET, N Channel, 1.2 kV, 20 A, 0.57 ohm, PLUS247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 780W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 780W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.57ohm
- Transistor Case Style: PLUS247
- Drain Source Voltage Vds: 1.2kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 20A
- Drain Source On State Resistance: 0.57ohm
- Gate Source Threshold Voltage Max: 6.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 9.82 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **IXFK20N120P IXFX20N120P** ## **Polar[TM ] Power MOSFET** ## **HiPerFET[TM]** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |**Symbol**|**Test Conditions**||**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---|---| |**VDSS**|TJ = 25°C to 150°C||1200|V| |**VDGR**|TJ = 25°C to 150°C, R|C, RGS= 1MΩ|1200|V| |**VGSS**|Continuous||±30|V| |**VGSM**|Transient||±40|V| |**ID25**|TC = 25°C||20|A| |**IDM**|TC = 25°C, pulse width limited by TJM||50|A| |**IA**|TC = 25°C||10|A| |**EAS**|TC = 25°C||1|J| |**dV/dt**|IS<br>≤IDM, VDD ≤VDSS, T|, TJ ≤150°C|15 V/ns|15 V/ns| |**PD**|TC = 25°C||780|W| |**TJ**|||-55 ... +150|°C| |**TJM**|||150|°C| |**Tstg**|||-55 ... +150|°C| |**TL**|1.6mm (0.062 in.) from case for 10s||300|°C| |**TSOLD**|Plastic body for 10s||260|°C| |**Md**|Mounting torque|(IXFK)|1.13/10|Nm/lb.in.| |**FC**|Mounting force|(IXFX)|20..120 /4.5..27 N/lb.|20..120 /4.5..27 N/lb.| |**Weight**|TO-264||10|g| ||PLUS247||6|6g| **V = 1200V DSS I = 20A D25 R ≤ 570m Ω DS(on) t ≤ 300ns rr** ## **TO-264 (IXFK)** **==> picture [99 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D S (TAB)<br>**----- End of picture text -----**<br> ## **PLUS247 (IXFX)** (TAB) G = Gate D = Drain S = Source TAB = Drain ## **Features** Fast intrinsic diode International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect ## **Advantages** |(TJ= 25°C unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |---|---|---| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>1200|~~—~~|V| |**VGS(th)**<br>VDS = VGS, ID= 1mA<br>3.5|6.5<br>~~|~~|6.5<br>V| |**IGSS**<br>VGS =±30V, VDS= 0V|±<br>~~—~~|±200<br>nA| |**IDSS**<br>VDS = VDSS<br>VGS = 0V<br>TJ= 125°C|25<br>5 mA<br>~~—~~<br>~~|~~|25<br>μA<br>5 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|570 m<br>~~|~~<br>~~=~~|570 mΩ| Easy to mount Space savings High power density ## **Applications:** > | High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99854B(04/08) © 2008 IXYS CORPORATION,All rights reserved ## **IXFK20N120P IXFX20N120P** |**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C unless otherwise specified)|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C unless otherwise specified)|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**TO-264 (IXFK) Outline**|**TO-264 (IXFK) Outline**|**TO-264 (IXFK) Outline**|**TO-264 (IXFK) Outline**|**TO-264 (IXFK) Outline**|**TO-264 (IXFK) Outline**||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**gfs**|VDS= 20V, ID= 0.5 • ID25, Note 1|10||16||S|||||||| |**Ciss**<br>**Coss**|11.1<br>VGS= 0V, VDS= 25V, f = 1MHz|11.1|11.1|11.1<br>600||nF<br>pF||| a|7|7<br>.|||| |**Crss**||||60||pF|||||||| |**RGi**|Gate input resistance<br>1.60|1.60|1.60|1.60||Ω|||||||| |**td(on)**|**Resistive Switching Times**|||49||ns|||||||| |**tr**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|||45||ns|||||||| |**td(off)**|RG= 1Ω(External)|||72||ns||Dim.|Millimeter<br>Min.<br>Max.||Inches<br>Min.<br>Max.||| |**tf**<br>**Qg(on)**<br>**Qgs**<br>**Qgd**|70<br>ns<br>193<br>nC<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>74<br>nC<br>85<br>nC<br>A<br>4.82<br>5.13<br>.190<br>.202<br>A1<br>2.54<br>2.89<br>.100<br>.114<br>A2<br>2.00<br>2.10<br>.079<br>.083<br>b<br>1.12<br>1.42<br>.044<br>.056<br>b1<br>2.39<br>2.69<br>.094<br>.106<br>b2<br>2.90<br>3.09<br>.114<br>.122<br>c<br>0.53<br>0.83<br>.021<br>.033<br>D<br>25.91<br>26.16<br>1.020<br>1.030<br>~~!-~~||||||||||||| |**RthJC**<br>**RthCS**||0.16|0.16|0.16<br>°C/W<br>0.15<br>°C/W<br>E<br>19.81<br>19.96<br>.780<br>.786<br>e<br>5.46 BSC<br>.215 BSC<br>J<br>0.00<br>0.25<br>.000<br>.010<br>K<br>0.00<br>0.25<br>.000<br>.010<br>~~_~~|||||||||| |||||||||L|20.32|20.83|.800||.820| |||||||||L1|2.29|2.59|.090||.102| |||||||||P|3.17|3.66|.125||.144| |**Source-Drain Diode Characteristic Values**||**Source-Drain Diode Characteristic Values**||||||Q|6.07|6.27|.239||.247| ||T|TJ= 25°C unless otherwise specified)||||||Q1<br>R|8.38<br>3.81|8.69<br>4.32|.330<br>.150||.342<br>.170| |**Symbol**|**Test Conditions Min. T**|**Test Conditions Min. T**|**Test Conditions Min. T**|**Test Conditions Min. Typ. Max.**|**. Max.**|||R1|1.78|2.29|.070||.090| |||||||||S|6.04|6.30|.238||.248| |**I**|V= 0V|||20|20|A||T|1.57|1.83|.062||.072| |TJ= 25C unless otherwise specified)<br>**Symbol**<br>**Test Conditions Min. T**|C unless otherwise specified)<br>**Test Conditions Min. Typ. Max.**| |---|---| |**IS**<br>VGS= 0V|20| |**ISM**<br>Repetitive, pulse width limited by TJM<br>**V**<br>I= I, V= 0V, Note 1|80<br>1.5| |**VSD**<br>IF= IS, VGS= 0V, Note 1<br>**trr**<br>**QRM**<br>**IRM**<br>IF= 10A, -di/dt = 100A/μs<br>V**R**= 100V, V**GS**= 0V|1.5<br>300<br>0.84<br>9| **PLUS247[TM] (IXFX) Outline** Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. ||4 - Drain (Collector)|4 - Drain (Collector)| |---|---|---| |Dim.<br>Min.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| |A<br>4.83<br>A1<br>2.29<br>A2<br>1.91|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085| |b<br>1.14<br>b1<br>1.91<br>b2<br>2.92|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123| |C<br>0.61<br>D<br>20.80<br>E<br>15.75|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635| |e<br>L<br>19.81<br>L1<br>3.81|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170| |Q<br>5.59<br>R<br>4.32|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190| 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 **IXFK20N120P IXFX20N120P** **Fig. 1. Output Characteristics @ 25ºC** **==> picture [248 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>VGS = 10V<br>18 9V<br>16<br>14<br>8V<br>12<br>10<br>8<br>6<br>4<br>7V<br>2<br>0<br>0 2 4 6 8 10 12<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **==> picture [252 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>VGS = 10V<br>18 8V<br>16<br>14<br>12<br>10<br>7V<br>8<br>6<br>4<br>6V<br>2<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 10A Value<br>vs. Drain Current<br>2.4<br>V GS = 10V<br>2.2 TJ = 125ºC<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>TJ = 25ºC<br>1.0<br>0.8<br>0 5 10 15 20 25 30 35 40<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [252 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>VGS = 10V<br>35 9V<br>30<br>25<br>20<br>8V<br>15<br>10<br>7V<br>5<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature** **==> picture [253 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 2.6<br>2.4 V GS = 10V<br>2.2<br>2.0 I D = 20A<br>1.8<br>1.6 I D = 10A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [251 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 22<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION,All rights reserved **IXFK20N120P IXFX20N120P** **==> picture [262 x 417] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>35<br>30<br>25<br>20<br>TJ = 125ºC<br> 25ºC<br>15 - 40ºC<br>10<br>5<br>0<br>5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode<br>60<br>50<br>40<br>30<br>20 T J = 125ºC<br>T J = 25ºC<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [249 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>f = 1 MHz<br>Ciss<br>10,000<br>1,000 C oss<br>100<br>Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [119 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>**----- End of picture text -----**<br> **==> picture [252 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>TJ = - 40ºC<br>30<br>25<br>25ºC<br>20<br>125ºC<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35<br>ID - Amperes<br>Fig. 10. Gate Charge<br>16<br> VDS = 600V<br>14<br> I D = 10A<br>12 I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 40 80 120 160 200 240 280<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [250 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_20N120P(86) 04-03-08-B
Updated at February 9, 2023
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