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IXFT140N10P
Power MOSFET, PolarFET, N Channel, 100 V, 140 A, 0.011 ohm, TO-268 (D3PAK), Surface Mount
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 600W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 15V
- Transistor Case Style: TO-268 (D3PAK)
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 140A
- Drain Source On State Resistance: 0.011ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 800 |
| Price | 3.34 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHV[TM] HiPerFET Power MOSFETs** N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated **IXFH 140N10P V = 100 V DSS IXFT 140N10P I = 140 A D25 R ≤ 11 m Ω DS(on) t ≤ 150 ns rr** **==> picture [504 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |Symbol|Test Conditions|Maximum Ratings|TO-247 (IXFH)| |VDSS|TJ|= 25|°|C to 175|°|C|100|V| |VDGR|TJ|= 25|°|C to 175|°|C; RGS = 1 M|Ω|100|V| |VGS|Continuous|±|20|V| |IVD25GSM|TransientTC|= 25|°|C|140|±|30|AV|G D S|D (TAB)| |I|External lead current limit|75|A| |D(RMS)| |IDM|TC|= 25|°|C, pulse width limited by TJM|300|A|TO-268 (IXFT)| |IAR|TC|= 25|°|C|60|A| |EAR|TC|= 25|°|C|80|mJ| |EAS|TC|= 25|°|C|2.5|J|G|nit| |S|D (TAB)| |dv/dt|IS|≤|IDM, di/dt|≤|100 A/|µ|s, VDD|≤|VDSS,|10|V/ns| |TJ|≤|150|°|C, RG = 4|Ω|G = Gate|D = Drain| |PD|TC|= 25|°|C|600|W|S = Source|TAB = Drain| |TJ|-55 ... +175|°|C| |TJM|175|°|C| |T|-55 ... +150|°|C| |stg| |TL|1.6 mm (0.062 in.) from case for 10 s|300|°|C|Features| |TSOLD|Plastic body for 10s|260|°|C|l|International standard packages| |Md|Mounting torque|(TO-247)|1.13/10|Nm/lb.in.|l|Unclamped Inductive Switching (UIS)| |rated| |Weight|TO-247TO-268|6.05.0|gg|l|Low package inductance-| |easy to drive and to protect| **----- End of picture text -----**<br> ## **Advantages** **==> picture [434 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||| |---|---|---|---|---|---|---|---|---| |Symbol|Test Conditions|Characteristic Values| |(TJ = 25|°|C, unless otherwise specified)|Min. Typ.|Max.|l|Easy to mount| |l|Space savings| |BVDSS|VGS|= 0 V, ID = 250|µ|A|100|||V|l| |High power density| |VGS(th)|VDS|= VGS, ID = 4.0 mA 3.0|_|5.0|V| |IGSS|VGS|=|±|20 VDC, VDS = 0|_|±|100|nA| |IDSS|VDS|= VDSS|25|µ|A| |VGS = 0 V|TJ = 175|°|C|7|500|µ|A| |RDS(on)|VGS|= 10 V, ID = 0.5 ID25|11|m|Ω| |VGS|= 15 V, ID = 300 A|9|m|Ω| |Note 1| **----- End of picture text -----**<br> DS99213E(01/06) © 2006 IXYS All rights reserved **IXFH 140N10P IXFT 140N10P** **==> picture [339 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |Symbol|Test Conditions Characteristic Values| |(TJ = 25|°|C, unless otherwise specified)| |Min.|Typ.|Max.| |gfs|VDS= 10 V; ID = 0.5 ID25, Note 1|45|65|S| |Ciss|4700|pF| |Coss|VGS = 0 V, VDS = 25 V, f = 1 MHz|1850|pF| |Crss|600|pF| |t|35|ns| |d(on)| |tr|VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A|50|ns| |td(off)|RG = 4|Ω|(External)|85|ns| |tf|26|ns| |Q|155|nC| |g(on)| |Qgs|VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25|33|nC| |Q|85|nC| |gd| |RthJC|0.25|°|C/W| |RthCS|(TO-247)|0.21|°|C/W| |Source-Drain Diode Characteristic Values| |(TJ = 25|°|C, unless otherwise specified)| |Symbol|Test Conditions|Min.|Typ.|Max.| |IS|VGS = 0 V|140|A| |ISM|Repetitive|300|A| |VSD|IF = IS, VGS = 0 V,|1.5|V| |Pulse test, t|≤|300|µ|s, duty cycle d|≤|2 %| |trr|IF = 25 A, -di/dt = 100 A/|µ|s|150|200|ns| |QRM|VR = 50 V, VGS = 0 V|0.8|µ|C| |IRM|6|A| **----- End of picture text -----**<br> Note 1: Pulse test, t ≤ 300 µ s, duty cycle d ≤ 2 % ## **TO-247 AD Outline** **==> picture [116 x 258] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |1 2 3| |Terminals:|1 - Gate|2 - Drain| |3 - Source|Tab - Drain| |Dim.|Millimeter|Inches| |Min.|Max.|Min.|Max.| |A|4.7|5.3|.185|.209| |A1|2.2|2.54|.087|.102| |A2|2.2|2.6|.059|.098| |b|1.0|1.4|.040|.055| |b1|1.65|2.13|.065|.084| |b2|2.87|3.12|.113|.123| |C|.4|.8|.016|.031| |D|20.80|21.46|.819|.845| |E|15.75|16.26|.610|.640| |e|5.20|5.72|0.205|0.225| |L|19.81|20.32|.780|.800| |L1|4.50|.177| |∅|P|3.55|3.65|.140|.144| |Q|5.89|6.40|0.232|0.252| |R|4.32|5.49|.170|.216| |S|6.15|BSC|242|BSC| **----- End of picture text -----**<br> **==> picture [159 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 Outline<br>**----- End of picture text -----**<br> **==> picture [511 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||| |---|---|---|---|---|---|---|---|---| |IXYS reserves the right to change limits, test conditions, and dimensions.| |IXYS MOSFETs and IGBTs are covered by|4,835,592|4,931,844|5,049,961|5,237,481|6,162,665|6,404,065 B1|6,683,344|6,727,585| |one or moreof the following U.S. patents:|4,850,072|5,017,508|5,063,307|5,381,025|6,259,123 B1|6,534,343|6,710,405B2|6,759,692| |4,881,106|5,034,796|5,187,117|5,486,715|6,306,728 B1|6,583,505|6,710,463|6,771,478 B2| **----- End of picture text -----**<br> **IXFH 140N10P IXFT 140N10P** **==> picture [243 x 432] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>140<br>VGS = 10V<br>120 9V<br>100<br>80<br>8V<br>60<br>7V<br>40<br>20<br>6V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VD S - Volts<br>Fig. 3. Output Characteristics<br>@ 150ºC<br>140<br>VGS = 10V<br>120 9V<br>100<br>8V<br>80<br>7V<br>60<br>40 6V<br>20<br>5V<br>0<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2<br>VD S - Volts<br> - Amperes<br>D<br>I<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. Drain Current** **==> picture [232 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2.75<br>2.5<br>TJ = 175ºC<br>2.25<br>2<br>1.75 V GS = 10V<br>1.5<br>VGS = 15V<br>1.25<br>TJ = 25ºC<br>1<br>0.75<br>0 50 100 150 200 250 300 350<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [229 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>270 VGS = 10V<br>240<br>9V<br>210<br>180<br>150<br>8V<br>120<br>90<br>60 7V<br>30<br>6V<br>0<br>0 1 2 3 V4 D S - Volts5 6 7 8 9 10<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction Temperature** **==> picture [233 x 405] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4<br>2.2 VGS = 10V<br>2<br>1.8<br>1.6 ID = 140A<br>1.4<br>ID = 70A<br>1.2<br>1<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Temperature<br>90<br>80 External Lead Current Limit<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXFH 140N10P IXFT 140N10P** **Fig. 7. Input Admittance** **==> picture [230 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>225<br>200<br>175<br>150<br>125<br>100<br>75 TJ = 150 º C<br> 25ºC<br>50<br> -40ºC<br>25<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [231 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4 1.6<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [232 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Ciss<br>1000 Coss<br>C rss<br>f = 1MHz<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [231 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>60<br>50 TJ = -40 º C<br>40 25ºC<br> 150ºC<br>30<br>20<br>10<br>0<br>0 40 80 120 160 200 240 280 320<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [228 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 50V<br>8 ID = 70A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [234 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>T J = 175ºC<br>R Limit T C = 25ºC<br>DS(on)<br>25µs<br>100µs<br>100<br>1ms<br>10ms<br>DC<br>10<br>1 10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFH 140N10P IXFT 140N10P** **==> picture [261 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e<br>**----- End of picture text -----**<br> **==> picture [491 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 1 . 0 0<br>0 . 1 0<br>0 . 0 1<br>0 . 1 1 1 0 1 0 0 1 0 0 0<br>Pu ls e W id th - millis e c o n d s<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved
Updated at April 27, 2026
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