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Illustrative purposes only
IXFR48N60P
Power MOSFET, N Channel, 600 V, 32 A, 0.15 ohm, ISOPLUS-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: PolarHV HiPerFET
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: ISOPLUS-247
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 32A
- Drain Source On State Resistance: 0.15ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 9.14 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHV[TM ] HiPerFET Power MOSFET ISOPLUS247[TM]** ## **IXFR 48N60P** **V DSS** **I D25 R DS(on) t rr** **(Electrically Isolated Back Surface)** **= 600 V** **= 32 A ≤ 150 m Ω ≤ 200 ns** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |**Symbol**|**Test Conditions**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**||||||| |---|---|---|---|---|---|---|---|---|---|---| |**VDSS**<br>**VDGR**|TJ <br>TJ|= 25°C to 150°C<br> = 25°C to 150°C; RGS= 1 MΩ|600<br>600|V<br>V|**ISOPLUS247 (IXFR)**<br>**E153432**<br>"~<br>B|||||| |||||||||||| |**VGSS**|Continuous||±30|V||||||| |**VGSM**|Transient||±40|V|G|||||| |**ID25**|TC|= 25°C|32|A|D|S|ISOLATED TAB|||| |**IDM**|TC|= 25°C, pulse width limited by TJM|110|A||||||| |**IAR**|TC|= 25°C|32|A|G = Gate|||D = Drain||| |**EAR**|TC|= 25°C|70|mJ|S = Source|||||| |**EAS**|TC|= 25°C|2.0|J||||||| |**dv/dt**|IS|≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,|20|V/ns||||||| ||TJ|≤150°C, RG= 4Ω||||||||| |**PD**|TC|= 25°C|300|W|**Features**|||||| |**TJ**|||-55 ... +150|°C|l International standard isolated|||||| |**TJM**|||150|°C|package|||||| |**Tstg**|||-55 ... +150|°C|l UL recognized package|||||| |**TL**|1.6 mm|1.6 mm(0.062 in.)from case for 10 s|300|°C|l Silicon chip on Direct-Copper-Bond||Silicon chip on Direct-Copper-Bond|||| |**VISOL**|50/60 Hz, RMS, 1 minute||2500|V~|substrate|||||| ||||||- High power dissipation|- High power dissipation||||| |F**C**|Mounting Force||20..120 / 4.5..26|N/lb.|- Isolated mounting surface|||||| |**Weight**|||5|g|- 2500V electrical isolation<br>l Unclamped Inductive Switching (UIS)|||||| ||||||rated|||||| - l Low package inductance - easy to drive and to protect - l Fast intrinsic diode |(T= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |**BVDSS**<br>VGS = 0 V, ID= 250µA<br>600|~~|~~|V| |**VGS(th)**<br>VDS = VGS, ID= 8 mA<br>3.0|~~_~~|5.0<br>V| |**IGSS**<br>VGS =±30 VDC, VDS= 0|~~_~~|±200<br>nA| |**IDSS**<br>VDS = VDSS<br>VGS= 0 V<br>TJ= 125°C|~~_~~|25<br>µA<br>1000<br>µA| |**RDS(on)**<br>VGS = 10 V, ID= IT||150<br>mΩ| ## **Advantages** - l Easy to mount l Space savings l High power density DS99184E(12/05) © 2006 IXYS All rights reserved **IXFR48N60P** |**Symbol**|**Test**|**Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---|---| ||||(TJ= 25°C, unless otherwise specified)|||| ||||**Min.**|**Typ.**|**Max.**|| |**gfs**|VDS|= 20 V; ID= IT, Notes 1, 2|35|53||S| |**Ciss**||||8860||pF| |**Coss**|VGS|= 0 V, VDS= 25 V, f = 1 MHz||850||pF| |**Crss**||||60||pF| |**td(on)**||||30||ns| |**tr**|VDS= 0.5 VDSS, ID= IT, VGS= 10 V|||25||ns| |**td(off)**|RG|= 2Ω(External)||85||ns| |**tf**||||22||ns| |**Qg(on)**||||150||nC| |**Qgs**|VGS|= 10 V, VDS= 0.5 VDSS, ID|= IT|50||nC| |**Qgd**||||50||nC| |**RthJC**|||||0.42|°C/W| |**RthCS**||||0.15||°C/W| |**Source-Drain**|**Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---| |||(TJ= 25°C, unless otherwise specified)|||| |**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|| |**IS**|VGS= 0 V|||32|A| |**ISM**|Repetitive|||110|A| |**VSD**|IF= IS, VGS= 0 V, Note 1|||1.5|V| |**trr**|IF= 20A, -di/dt = 100 A/µs|||200|ns| |**QRM**|VR= 480V||0.8||µC| |**IRM**|||6.0||A| ## **ISOPLUS247 Outline** **==> picture [161 x 348] intentionally omitted <==** Notes: 1. Pulse test, t ≤ 300 µ s, duty cycle d ≤ 2 %; 2. Test current IT = 24 A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 **IXFR 48N60P** **Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºCºCC @ 25ºC** **==> picture [227 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> @ 25ºCºCC<br>50<br>VGS = 10V<br>45<br> 8V<br>40 7V<br>35<br>30<br>25<br>6V<br>20<br>15<br>10<br>5<br>5V<br>0<br>0 1 2 3 4 5 6<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **==> picture [233 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> 120 VGS = 10V<br> 8V<br>100<br>80 7V<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 4 8 12 16 20 24<br>V D S - Volts<br>Fig. 4. RDS(on) Norm alized to ID = 24A<br>Value vs. Junction Tem perature<br>3.1<br>2.8 VGS = 10V<br>2.5<br>2.2<br>1.9 ID = 48A<br>1.6<br>ID = 24A<br>1.3<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **==> picture [242 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics<br>@ 125ºC<br>50<br>45 VGS = 10V<br> 7V<br>40<br>35<br>6V<br>30<br>25<br>20<br>15<br>10<br>5V<br>5<br>0<br>0 2 4 6 8 10 12 14<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Norm alized to ID = 24A Value vs. Drain Current** **Fig. 6. Drain Curre nt vs . Cas e Te m pe rature** **==> picture [231 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **==> picture [231 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 3.4<br>3.1 VGS = 10V<br>TJ = 125ºC<br>2.8<br>2.5<br>2.2<br>1.9<br>1.6<br>1.3<br>TJ = 25ºC<br>1<br>0.7<br>0 20 40 60 80 100 120 140<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXFR48N60P** **Fig. 7. Input Adm ittance** **==> picture [231 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br> TJ = 125ºC<br>40 25ºC<br> -40ºC<br>30<br>20<br>10<br>0<br>4 4.5 5 5.5 6 6.5 7<br>V G S - Volts<br>Fig. 9. Source Current vs.<br>Source-To-Drain Voltage<br>160<br>140<br>120<br>100<br>80<br>60<br>TJ = 125ºC<br>40<br>20 TJ = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3<br>V S D - Volts<br> - Amperes<br>D<br>I<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [230 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40 TJ = -40ºC<br> 25ºC<br>30 125ºC<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80 90<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [228 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 300V<br>8 ID = 24A<br>7 I G = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [232 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>f = 1MHz<br>Ciss<br>10000<br>Coss<br>1000<br>100 C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>V D S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig . 13. M axim u m T r an s ie n t T h e r m Re s is tan ce** **==> picture [239 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>0.00<br>0.0001 0.001 0.01 0.1 1 10<br>Puls e Width - Sec onds<br>C / W<br>º<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions.
Updated at April 27, 2026
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