IXFR36N60P

Power MOSFET, N Channel, 600 V, 20 A, 0.2 ohm, ISOPLUS-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipatio
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 208W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: ISOPLUS-247
Drain Source Voltage Vds: 600V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 20A
Drain Source On State Resistance: 0.2ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	7.51 €
Current stock	200+
Lead time	30 days

Datasheet

## **PolarHV[TM ] HiPerFET IXFR 36N60P Power MOSFET** 

**(Electrically Isolated Back Surface)** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

**V = 600 V DSS I = 20 A D25 R ≤ 200 m Ω DS(on) t ≤ 200 ns rr** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|**ISOPLUS247 (IXFR)**||
|---|---|---|---|---|---|
|||||**E153432**||
|**VDSS**|TJ = 25°C to 150°C|600|V|||
|**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ|600|V|||
|**VGSS**|Continuous|±30|V|G||
|**VGSM**|Transient|±40|V|S<br>D<br>Isolated Tab||
|**ID25**|TC = 25°C|20|A|||
|**IDM**|TC = 25°C, pulse width limited by TJM|80|A|G =  Gate<br>D     = Drain||
|**IAR**|TC = 25°C|36|A|S =  Source||
|**EAR**|TC = 25°C|50|mJ|||
|**EAS**|TC = 25°C|1.5|J|||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,|20|V/ns|||
|**PD**|TJ ≤150°C, RG= 2Ω<br>TC = 25°C|208|°C|**Features**<br>l Silicon chip on Direct-Copper-Bond<br>substrate||
|**TJ**<br>**TJM**<br>**Tstg**<br>**TL**<br>**TSOLD**<br>**VISOL**|1.6 mm (0.062 in.) from case for 10 s<br>Plastic bodyfor 10 s<br>50/60 Hz, RMS, 1 minute|-55 ... +150<br>150<br>-55 ... +150<br>300<br>260<br>2500|°C<br>°C<br>°C<br>°C<br>°C<br>V~|- High power dissipation<br>- Isolated mounting surface<br>- 2500V electrical isolation<br>l International standard package<br>l Fast recovery diode<br>l Unclamped Inductive Switching (UIS)<br>rated||
|**FC**|Mountingforce|20..120/4.6..27|N/lb|l Low package inductance||
|**Weight**|5|5|g|- easy to drive and to protect||



## **Advantages** 

|(T= 25°C, unless otherwise specified)<br>**Min.    Typ.**|**Min.    Typ.**|**Max.**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.    Typ.**<br>~~|~~|**Min.    Typ.**<br>~~||~~|**Max.**|
|**BVDSS**<br>VGS = 0 V, ID= 250µA<br>600<br>~~|~~<br>~~|~~|~~||~~<br>~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 4 mA<br>3.0<br>~~|~~<br>~~|~~<br>~~|~~|~~| |~~<br>~~|~~<br>~~||~~|5.0<br>V|
|**IGSS**<br>VGS =±30 V, VDS= 0 V<br>~~|~~<br>~~|~~|~~|~~<br>~~||~~|±100<br>nA|
|**IDSS**<br>VDS =  VDSS<br>VGS= 0 V<br>TJ= 125°C<br>~~|~~|~~| |7~~|25<br>µA<br>250<br>µA|
|**RDS(on)**<br>VGS = 10 V, ID=  IT(note 1)<br>Pulse test, t≤300µs, duty cycle d≤2 %||200<br>mΩ|



DS99395E(03/06) 

© 2006 IXYS All rights reserved 

**IXFR 36N60P** 

|**Symbol**|**Test**|**Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|---|---|
||||(TJ= 25°C, unless otherwise specified)||||
||||**Min.**|**Typ.**|**Max.**||
|**gfs**|VDS|= 20 V; ID=  IT, pulse test|25|40||S|
|**Ciss**||||5800||pF|
|**Coss**|VGS|= 0 V, VDS= 25 V, f = 1 MHz||570||pF|
|**Crss**||||30||pF|
|**td(on)**||||30||ns|
|**tr**|VGS|= 10 V, VDS=  0.5 VDSS,ID|=  IT|25||ns|
|**td(off)**|RG|=2Ω(External)||80||ns|
|**tf**||||22||ns|
|**Qg(on)**||||102||nC|
|**Qgs**|VGS|= 10 V, VDS= 0.5 VDSS, ID|=   IT|34||nC|
|**Qgd**||||36||nC|
|**RthJC**|||||0.6|°C/W|
|**RthCS**||||0.15||°C/W|



## **Note 1: Test current IT = 18 A** 

|**Source-Drain**|**Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|---|
|||(TJ= 25°C, unless otherwise specified)||||
|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**||
|**IS**|VGS= 0 V|||36|A|
|**ISM**|Repetitive|||80|A|
|**VSD**|IF= IS, VGS= 0 V,|||1.5|V|
||Pulse test, t≤300µs, duty|cycle d≤2 %||||
|**trr**|IF= 25A,  -di/dt = 100 A/µs|||200|ns|
|**QRM**|VR= 100V,  VGS= 0 V||0.8||µC|
|**IRM**|||6.0||A|



## **ISOPLUS247 (IXFR) Outline** 

**==> picture [161 x 348] intentionally omitted <==**

IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 6,710,463 6,771,478 B2 

**IXFR 36N60P** 

**Fig. 1. Output Characteristics** 

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**----- Start of picture text -----**<br>
@ 25ºC<br>36<br>VGS = 10V<br>32<br>           7V<br>28<br>24<br>20 6V<br>16<br>12<br>8<br>4 5V<br>0<br>0 1 2 3 4 5 6 7<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 125ºC** 

**==> picture [242 x 411] intentionally omitted <==**

**----- Start of picture text -----**<br>
36<br>VGS = 10V<br>32<br>           7V<br>28<br>24 6V<br>20<br>16<br>12<br>5V<br>8<br>4<br>0<br>0 2 4 6 8 10 12 14 16<br>V D S - Volts<br>Fig. 5. RDS(on) Norm alized to<br>ID = 18A Value vs. ID<br>3.4<br>3.0 VGS = 10V<br>TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4<br>TJ = 25ºC<br>1.0<br>0.6<br>0 10 20 30 40 50 60 70 80 90<br>I D - Amperes<br> - Amperes<br>D<br>I<br>  - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ 25ºC** 

**==> picture [229 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
90<br>VGS = 10V<br>80<br>           8V<br>70<br>60 7V<br>50<br>40<br>6V<br>30<br>20<br>10<br>5V<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Norm alized to ID = 18A Value vs. Junction Tem perature** 

**==> picture [232 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.1<br>2.8 VGS = 10V<br>2.5<br>2.2<br>1.9 ID = 36A<br>1.6<br>1.3 ID = 18A<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>  - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


## **Fig. 6. Drain Curre nt vs . Cas e Te m pe rature** 

**==> picture [231 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
22<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**IXFR 36N60P** 

**Fig. 7. Input Admittance** 

**==> picture [230 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
55<br>50<br>45<br>40<br>35<br>30<br>25<br>20  TJ = 125ºC<br>         25ºC<br>15<br>        -40ºC<br>10<br>5<br>0<br>3.5 4 4.5 5 5.5 6 6.5<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**==> picture [229 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30 TJ = 125ºC<br>20<br>10 T J = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [230 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>Ciss<br>1000<br>Coss<br>100<br>f  = 1MHz<br>Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

**==> picture [229 x 406] intentionally omitted <==**

**----- Start of picture text -----**<br>
70<br>60 T J  = -40ºC<br>       25ºC<br>50      125ºC<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 300V<br>8 ID = 18A<br>7 I G = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Q G - nanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. M axim um  Trans ie nt The rm al Re s is tance** 

**==> picture [232 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>1 10 100 1000<br>Pulse Width - milliseconds<br>C / W<br>º<br>  -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**==> picture [157 x 46] intentionally omitted <==**

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Updated at April 27, 2026

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