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IXFR200N10P
Power MOSFET, N Channel, 100 V, 133 A, 9000 µohm, ISOPLUS-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:133A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipa
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 15V
- Transistor Case Style: ISOPLUS-247
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 133A
- Drain Source On State Resistance: 9000µohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 9.97 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM] HiPERFET** ## **IXFR200N10P** ## **Power MOSFET** ## **(Electrically Isolated Tab)** N-Channel Enhancement Mode Avalanche Rated |**Symbol**<br>**VDSS**<br>**VDGR**<br>**VGSS**<br>**VGSM**<br>**ID25**<br>~~—~~|**Test Conditions**<br>TJ = 25C to 175C<br>TJ = 25C to 175C, RGS= 1M<br>Continuous<br>Transient<br>TC = 25C|**Maximum Ratings**<br>100<br>100<br>V<br>20<br>30<br>120|V<br>V<br>V<br>V<br>A| |---|---|---|---| |**IDM**|TC = 25C, Pulse Width Limited by TJM|400|A| |**IA**|TC = 25C|60|A| |**EAS**|TC = 25C|4|J| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 10 V/ns|150°C 10 V/ns|150°C 10 V/ns| |**PD**|TC = 25C|300|W| |**TJ**||-55...+175<br>C|| |**TJM**||175<br>C|| |**Tstg**||-55...+175<br>C|| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C| |**VISOL**|50/60 Hz, 1 Minute 2500|50/60 Hz, 1 Minute 2500<br>|V~| |**FC**|Mounting Force<br>20..120/4.5..27 N/lb|20..120/4.5..27 N/lb|20..120/4.5..27 N/lb| |**Weight**|5 g|5 g|5 g| **V = 100V DSS I = 120A D25 R < 9m DS(on)** **ISOPLUS247 E153432** **==> picture [103 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D Isolated Tab<br>S<br>**----- End of picture text -----**<br> - G = Gate D = Drain S = Source ## **Features** - Silicon chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation - Low RDS(on) and QG - Avalanche Rated - Low Package Inductance - Fast Intrinsic Rectifier ## **Advantages** - High Power Density - Easy to Mount |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>100|~~7~~|V| |**VGS(th)**<br>VDS = VGS, ID= 8mA<br>2.5<br>5.0 V|5.0 V<br>~~-~~|5.0 V| |**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~-~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 150C<br>500|25<br>500<br>~~7~~|25A<br>500A| |**RDS(on)**<br>VGS = 10V, ID= 100A, Note 1<br>9 m<br>VGS = 15V, ID= 400A, Note 1 6 m|9 m<br>= 400A, Note 1 6 m<br>~~7~~|9 m<br>= 400A, Note 1 6 m| - Space Savings ## **Applications** - DC-DC Coverters - Battery Chargers - Switch-Mode and Resonant-Mode - Power Supplies - DC Choppers - AC and DC Motor Drives - Uninterrupted Power Supplies - High Speed Power Switching - Applications DS99238F(02/17) © 2017 IXYS CORPORATION, All Rights Reserved ## **IXFR200N10P** |**IXFR200N10P**|**IXFR200N10P**|**IXFR200N10P**|**IXFR200N10P**|**IXFR200N10P**|**IXFR200N10P**|**IXFR200N10P**|**IXFR200N10P**| |---|---|---|---|---|---|---|---| ||||||||| ||||||||| |**Symbol**<br>**Test Conditions Characteristic Value**<br>(TJ= 25C, unless otherwise specified)<br>**Min. Typ. Max.**|||||**s**<br>S<br>F<br>F<br>F<br>ns<br>ns|**ISOPLUS247 (IXTR) Outline**|| |**gfs**<br>VDS= 10V, ID= 60A, Note 1 60|||97||||| ||||||||| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|||7600<br>2900<br>860|p<br>p<br>p|||| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 60A<br>RG= 3.3(External)|||30<br>35<br>||||| |||<br> <br><br>rnal)|150<br>90|||1<br>2|- Gate<br>,4 - Drain<br>- Source| |**Qg(on)**<br>**Qgs**<br>VGS= 10V, VDS=<br>**Qgd**||<br>0.5 • VDSS, ID= 100A<br> <br>|235<br>50<br>135|n<br>n<br>n|||| |||||||3|| ||||||||| |**RthJC**<br>**RthCS**<br>**Source-Drain Diode**|||||||| |**Symbol**<br>**Test Condition**<br>(TJ= 25C, unless otherwise s<br>**IS**<br>VGS= 0V<br>**ISM**<br>Repetitive, puls<br>**VSD**<br>IF= IS, VGS= 0V,<br><br> <br>||**s Characteristic Values**<br>pecified)<br>**Min. Typ. Max.**<br>200 A<br>e width limited by TJM<br>400 A<br>Note 1<br>1.5 V<br>150 ns<br>6.0<br>A<br>0.4<br>μC<br>100A/s,<br>0V|||||| |**trr**<br>**IRM**<br>**Q**|<br> <br> <br>IF= 25A, -di/dt =<br>VR= 50V, VGS=|<br> <br> <br>100A/s,<br>0V|<br>6.0<br>04||||| |**RM**<br>|||||||| ||||||||| |Note: 1. Pulse test, t300|||||||| Note: 1. Pulse test, t 300s; duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXFR200N10P** **==> picture [264 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>200<br>VGS = 10V<br>180 9V<br>160<br>140 8V<br>120<br>100<br>80 7V<br>60<br>40<br>6V<br>20<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>350<br>VGS = 10V<br>300<br>9V<br>250<br>200<br>8V<br>150<br>100<br>7V<br>50<br>6V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [535 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 100A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 150ºC Junction Temperature<br>200 2.4<br>180 V GS = 10V 9V 2.2 VGS = 10V<br>160<br>8V 2.0<br>140 1.8 I D = 200A<br>120<br>1.6 I D = 100A<br>100 7V<br>1.4<br>80<br>1.2<br>60<br>1.0<br>40 6V<br>20 0.8<br>0 5V 0.6<br>0 1 1 2 2 3 3 4 -50 -25 0 25 50 75 100 125 150 175<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 100A Value vs.<br>Fig. 6. Maximum Drain Current vs. Case Temperature<br>Drain Current<br>2.4 140<br>2.2<br>120<br>2.0 TJ = 150ºC<br>100<br>1.8<br>1.6 80<br>1.4 VGS = 10V 60<br>VGS = 15V<br>1.2<br>40<br>1.0 TJ = 25ºC<br>20<br>0.8<br>0.6 0<br>0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 175<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2017 IXYS CORPORATION, All Rights Reserved **IXFR200N10P** **==> picture [264 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>300<br>250<br>200<br>150<br>100<br>TJ = 125ºC<br> 25ºC<br>50<br>- 40ºC<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>350<br>300<br>TJ = 25ºC<br>250<br>TJ = 125ºC<br>200<br>150<br>100<br>50<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [264 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>140<br>TJ = - 40ºC<br>120<br>100 25ºC<br>80<br>125ºC<br>60<br>40<br>20<br>0<br>0 50 100 150 200 250 300 350<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [255 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 V DS = 50V<br> I D = 100A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 40 80 120 160 200 240<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [258 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>f = 1 MHz<br>10,000 C iss<br>Coss<br>1,000<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [255 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>R DS(on) Limit<br>100µs<br>100<br>1ms<br>10 DC 10ms<br>TJ = 175ºC<br>TC = 25ºC<br>Single Pulse<br>1<br>1 10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFR200N10P** **==> picture [538 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_200N10P (88) 2-08-17 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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